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IRF3710 MOSFET (IC) Datasheet. Cross Reference Search. IRF3710 Equivalent

Type Designator: IRF3710

Type of IRF3710 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 200

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 57

Maximum junction temperature (Tj), ┬░C: 150

Rise Time of IRF3710 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.025

Package: TO220AB

IRF3710 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF3710 PDF doc:

1.1. irf3710z.pdf Size:172K _international_rectifier

IRF3710
IRF3710

PD - 94632 IRF3710Z AUTOMOTIVE MOSFET HEXFET« Power MOSFET Features D Advanced Process Technology VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 18m? 175░C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 59A S Description Specifically designed for Automotive applications, this HEXFET« Power MOSFET utilizes the latest

1.2. irf3710.pdf Size:94K _international_rectifier

IRF3710
IRF3710

PD - 91309A IRF3710 HEXFET« Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 23m? G Fast Switching Fully Avalanche Rated ID = 57A S Description Advanced HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

1.3. irf3710s.pdf Size:184K _international_rectifier

IRF3710
IRF3710

PD -91310C IRF3710S/L HEXFET« Power MOSFET Advanced Process Technology D Surface Mount (IRF3710S) VDSS = 100V Low-profile through-hole (IRF3710L) 175░C Operating Temperature RDS(on) = 0.025? Fast Switching G Fully Avalanche Rated ID = 57A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re

1.4. irf3710.pdf Size:274K _first_silicon

IRF3710
IRF3710

´╗┐SEMICONDUCTOR IRF3710 TECHNICAL DATA N-Channel Power MOSFET (100V/59A) Purpose Suited for low voltage applications such as automotive, DC/DC Converters, and high efficiency switching for power management in portable and battery operated products Feature Low RDS(on),low gate charge,low Crss,fast switching. Absolute maximum ratings(Ta=25Ôäâ) Symbol Rating Unit 1.Gate 2.Drain

See also transistors datasheet: IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S , IRF350 , IRF3515S , IRF360 , IRFP150N , IRF3710L , IRF3710S , IRF430 , IRF440 , IRF450 , IRF451 , IRF452 , IRF453 .

Search Terms:

 IRF3710 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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