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IRF430 MOSFET (IC) Datasheet. Cross Reference Search. IRF430 Equivalent

Type Designator: IRF430

Type of IRF430 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 75

Maximum drain-source voltage |Uds|, V: 500

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 4.5

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF430 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 610

Maximum drain-source on-state resistance (Rds), Ohm: 1.8

Package: TO3

IRF430 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF430 PDF doc:

1.1. irf430.pdf Size:141K _fairchild_semi

IRF430
IRF430

1.2. 2n6762_irf430.pdf Size:146K _international_rectifier

IRF430
IRF430

PD - 90336F IRF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762 HEXFET?TRANSISTORS JANTXV2N6762 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF430 500V 1.5 ? 4.5A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of thi

1.3. irf430-3.pdf Size:56K _intersil

IRF430
IRF430

IRF430 Data Sheet March 1999 File Number 1572.4 4.5A, 500V, 1.500 Ohm, N-Channel Features Power MOSFET • 4.5A, 500V This N-Channel enhancement mode silicon gate power field • rDS(ON) = 1.500? effect transistor is an advanced power MOSFET designed, • Single Pulse Avalanche Energy Rated tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of opera

See also transistors datasheet: IRF3415L , IRF3415S , IRF350 , IRF3515S , IRF360 , IRF3710 , IRF3710L , IRF3710S , IRF9Z34 , IRF440 , IRF450 , IRF451 , IRF452 , IRF453 , IRF460 , IRF4905 , IRF4905L .

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