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IRF430 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF430

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 75 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Drain Current |Id|: 4.5 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 610 pF

Maximum Drain-Source On-State Resistance (Rds): 1.8 Ohm

Package: TO3

IRF430 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF430 PDF doc:

1.1. irf430.pdf Size:141K _fairchild_semi

IRF430
IRF430

1.2. 2n6762_irf430.pdf Size:146K _international_rectifier

IRF430
IRF430

PD - 90336F IRF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762 HEXFET?TRANSISTORS JANTXV2N6762 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF430 500V 1.5 ? 4.5A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of thi

1.3. irf430-3.pdf Size:56K _intersil

IRF430
IRF430

IRF430 Data Sheet March 1999 File Number 1572.4 4.5A, 500V, 1.500 Ohm, N-Channel Features Power MOSFET • 4.5A, 500V This N-Channel enhancement mode silicon gate power field • rDS(ON) = 1.500? effect transistor is an advanced power MOSFET designed, • Single Pulse Avalanche Energy Rated tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of opera

Datasheet: IRF3415L , IRF3415S , IRF350 , IRF3515S , IRF360 , IRF3710 , IRF3710L , IRF3710S , IRF9Z34 , IRF440 , IRF450 , IRF451 , IRF452 , IRF453 , IRF460 , IRF4905 , IRF4905L .

 


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