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8822 MOSFET (IC) Datasheet. Cross Reference Search. 8822 Equivalent

Type Designator: 8822

Marking Code: 8820

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd), W: 1.5

Maximum Drain-Source Voltage |Vds|, V: 20

Maximum Gate-Source Voltage |Vgs|, V: 10

Maximum Drain Current |Id|, A: 6

Maximum Junction Temperature (Tj), °C: 150

Rise Time (tr), nS:

Drain-Source Capacitance (Cd), pF:

Maximum Drain-Source On-State Resistance (Rds), Ohm: 0.022

Package: TSSOP8

8822 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

8822 PDF doc:

1.1. dmg8822uts.pdf Size:150K _diodes

8822
8822

DMG8822UTS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case: TSSOP-8L Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020D Low Input/Out

1.2. pt8822.pdf Size:2155K _htsemi

8822
8822

PT8822 20V Dual N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@1.8V, Ids@2A = 50m? RDS(ON), Vgs@2.5V, Ids@5.5A = 32m? RDS(ON), Vgs@4.5V, Ids@6.6A = 24m? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Ideal for Li ion battery pack applications Package Dimensions 1 8 D1 D2 2 7 S1 S2 3 6 S1 S2 4 5 G1 G2 Millimet

1.3. ao8822.pdf Size:197K _aosemi

8822
8822

AO8822 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary VDS 20V The AO8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 7A voltages as low as 1.8V while retaining a 12V VGS(MAX) RDS(ON) (at VGS=10V) < 18mΩ rating. This device is suitable for use as a uni-directional RDS(ON) (at VGS

1.4. ssf8822.pdf Size:304K _silikron

8822
8822

SSF8822 D1 D2 DESCRIPTION The SSF8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G1 G2 with gate voltages as low as 0.8V. This device is suitable for use as a uni-directional or bi-directional load switch, S1 S2 facilitated by its common-drain configuration. Marking and pin Assignment GENERAL FEATURES ● V = 20V,I = 7A DS

1.5. ftk8822.pdf Size:266K _first_silicon

8822
8822

SEMICONDUCTOR FTK8822 TECHNICAL DATA D 1 D 2 DESCRIPTION The FTK8822 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G 1 G 2 with gate voltages as low as 1.8V. This device is suitable for use as a uni-directional or bi-directional load switch, S 1 S 2 facilitated by its common-drain configuration. Schematic diagram GENERAL FEATURES

1.6. 8822.pdf Size:556K _shenzhen-tuofeng-semi

8822
8822

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 8822 8822 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The 8822 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 6 A (VGS = 10V) operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is

See also transistors datasheet: 4812 , 4835 , 4920 , 4946 , 4953 , 6604 , 8810 , 8820 , 2N7002 , 9435 , 4953A , 4953B , 9926A , 9926B , AO3410 , APM2317 , FDMA905 .

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