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IRF453 MOSFET (IC) Datasheet. Cross Reference Search. IRF453 Equivalent

Type Designator: IRF453

Type of IRF453 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 450

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 12

Maximum junction temperature (Tj), Ā°C: 150

Rise Time of IRF453 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.5

Package: TO3

IRF453 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF453 PDF doc:

5.1. irf450-1-2-3.pdf Size:359K _st2

IRF453
IRF453

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5.2. 2n6770_irf450.pdf Size:144K _international_rectifier

IRF453
IRF453

PD - 90330F REPETITIVE AVALANCHE AND dv/dt RATED IRF450 HEXFET?TRANSISTORS JANTX2N6770 THRU-HOLE (TO-204AA/AE) JANTXV2N6770 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF450 500V 0.400? 12A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the A

5.3. irf450.pdf Size:56K _intersil

IRF453
IRF453

IRF450 Data Sheet March 1999 File Number 1827.3 13A, 500V, 0.400 Ohm, N-Channel Features Power MOSFET • 13A, 500V This N-Channel enhancement mode silicon gate power field • rDS(ON) = 0.400? effect transistor is an advanced power MOSFET designed, • Single Pulse Avalanche Energy Rated tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operati

See also transistors datasheet: IRF3710 , IRF3710L , IRF3710S , IRF430 , IRF440 , IRF450 , IRF451 , IRF452 , BUZ90A , IRF460 , IRF4905 , IRF4905L , IRF4905S , IRF510 , IRF510A , IRF510S , IRF511 .

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