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IRF513 MOSFET (IC) Datasheet. Cross Reference Search. IRF513 Equivalent

Type Designator: IRF513

Type of IRF513 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 43

Maximum drain-source voltage |Uds|, V: 80

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 4.9

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF513 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.8

Package: TO220

IRF513 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF513 PDF doc:

5.1. irf510.pdf Size:151K _fairchild_semi

IRF513
IRF513

5.2. irf510a.pdf Size:252K _fairchild_semi

IRF513
IRF513

IRF510A Advanced Power MOSFET FEATURES BVDSS = 100 V n Avalanche Rugged Technology RDS(on) = 0.4 ? n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 5.6 A n Improved Gate Charge n Extended Safe Operating Area TO-220 n 175C Operating Temperature n Lower Leakage Current : 10 ?A (Max.) @ VDS = 100V n Lower RDS(ON) : 0.289 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absol

5.3. irf510pbf.pdf Size:239K _international_rectifier

IRF513
IRF513

PD - 95364 IRF510PbF Lead-Free 6/10/04 Document Number: 91015 www.vishay.com 1 IRF510PbF Document Number: 91015 www.vishay.com 2 IRF510PbF Document Number: 91015 www.vishay.com 3 IRF510PbF Document Number: 91015 www.vishay.com 4 IRF510PbF Document Number: 91015 www.vishay.com 5 IRF510PbF Document Number: 91015 www.vishay.com 6 IRF510PbF TO-220AB Package Outline Dimen

5.4. irf510s.pdf Size:325K _international_rectifier

IRF513
IRF513

PD - 95540 IRF510SPbF Lead-Free SMD-220 7/21/04 Document Number: 91016 www.vishay.com 1 IRF510SPbF Document Number: 91016 www.vishay.com 2 IRF510SPbF Document Number: 91016 www.vishay.com 3 IRF510SPbF Document Number: 91016 www.vishay.com 4 IRF510SPbF Document Number: 91016 www.vishay.com 5 IRF510SPbF Document Number: 91016 www.vishay.com 6 IRF510SPbF Peak Diode Reco

5.5. irf510.pdf Size:175K _international_rectifier

IRF513
IRF513

5.6. irf510a.pdf Size:937K _samsung

IRF513
IRF513

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.6 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.289 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings

See also transistors datasheet: IRF4905 , IRF4905L , IRF4905S , IRF510 , IRF510A , IRF510S , IRF511 , IRF512 , 2SK4106 , IRF520 , IRF520A , IRF520FI , IRF520N , IRF520NS , IRF521 , IRF5210 , IRF5210L .

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