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2301H MOSFET (IC) Datasheet. Cross Reference Search. 2301H Equivalent

Type Designator: 2301H

Marking code: 2301H

Type of 2301H transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 0.9

Maximum drain-source voltage |Uds|, V: 30

Maximum gate-source voltage |Ugs|, V: 12

Maximum drain current |Id|, A: 2

Maximum junction temperature (Tj), °C: 150

Rise Time of 2301H transistor (tr), nS: 35

Drain-source Capacitance (Cd), pF: 75

Maximum drain-source on-state resistance (Rds), Ohm: 0.125

Package: SOT23

2301H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2301H PDF doc:

1.1. 2301h.pdf Size:2066K _goford

2301H
2301H

GOFORD 2301H DESCRIPTION D2 The 2301H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G2 voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S2 GENERAL FEATURES ● Schematic diagram VDSS RDS(ON) RDS(ON) ID @ (Typ) @ -4.5V -10V (Typ) mΩ mΩ -2 -30V 105 65 A 2301H

See also transistors datasheet: G1825 , 15P03 , 16N10 , 18N10 , 2002A , 20P10 , 21N06 , 22N10 , IRF9640 , 2301L , 25P06 , 25P10 , 25P10G , 28N10 , 28P55 , 30P10A , 30P55 .

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