MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF520N
  IRF520N
  IRF520N
 
IRF520N
  IRF520N
  IRF520N
 
IRF520N
  IRF520N
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AON6240
AON6242 ..AP02N60J
AP02N60J-H ..AP2310AGN-HF
AP2310CGN-HF ..AP4416GH
AP4417GH ..AP6903GH-HF
AP6904GH-HF ..AP9560GS-HF
AP9561AGH-HF ..AP9977GM
AP9978AGP-HF ..APT6015JVR
APT6015LVR ..AUIRFR2307Z
AUIRFR2405 ..BF900
BF901 ..BLF6G38-50
BLF6G38LS-100 ..BSC152N10NSFG
BSC159N10LSFG ..BSZ180P03NS3EG
BSZ180P03NS3G ..BUK7528-55A
BUK752R3-40C ..BUK9620-55
BUK9620-55A ..CEB02N7G
CEB02N9 ..CEF85N75
CEFF634 ..CEPF640
CES2301 ..DMN2004K
DMN2004TK ..EMH2408
EMH2409 ..FDB7030L
FDB7045L ..FDD8451
FDD8453LZ ..FDMC86520L
FDMC8878 ..FDP22N50N
FDP24N40 ..FDS6614A
FDS6630A ..FK16SM-5
FK16SM-6 ..FQD6N50C
FQD7N10L ..FQT4N25
FQT5P10 ..FS3KM-10
FSF055D ..H5N2522LS
H5N2801P ..HAT2129H
HAT2131R ..HUF75345G3
HUF75345P3 ..IPB054N06N3G
IPB054N08N3G ..IPD30N08S2L-21
IPD30N10S3L-34 ..IPP015N04NG
IPP023N04NG ..IPW50R199CP
IPW50R250CP ..IRF350
IRF3515L ..IRF6637
IRF6638 ..IRF750A
IRF7521D1 ..IRF9Z10
IRF9Z12 ..IRFH7932
IRFH7934 ..IRFP245
IRFP250 ..IRFR9012
IRFR9014 ..IRFS9521
IRFS9522 ..IRFY340C
IRFY430 ..IRLI3803
IRLI510A ..IRLZ24NS
IRLZ30 ..IXFH28N50F
IXFH28N50Q ..IXFL60N60
IXFL60N80P ..IXFR24N50Q
IXFR24N80P ..IXFX24N90Q
IXFX250N10P ..IXTA76N25T
IXTA76P10T ..IXTH6N120
IXTH6N150 ..IXTP32N20T
IXTP32P05T ..IXTT72N20
IXTT74N20P ..KF3N80F
KF3N80I ..KP504D
KP504E ..MCH6444
MCH6445 ..MTBA6C12J4
MTBB0P10J3 ..MTN3820F3
MTN3820J3 ..NDB6050
NDB6050L ..NTD4965N
NTD4969N ..NVD5863NL
NVD5865NL ..PMBFJ110
PMBFJ111 ..PSMN3R7-25YLC
PSMN3R7-30YLC ..RFD3055LE
RFD3055LESM ..RJK1008DPN
RJK1008DPP ..RSD050N06
RSD050N10 ..SDF320JDA
SDF340JAA ..SGSP222
SGSP230 ..SMK1430DI
SMK1430F ..SML60S18
SML60T38 ..SPP24N60C3
SPP24N60CFD ..SSH60N06
SSH60N06A ..SSM6J412TU
SSM6J501NU ..SSU2N60A
SSU3055A ..STD17N06L
STD17N06L-1 ..STF12NK65Z
STF12NM50ND ..STK4N30
STK4N30L ..STP25N06
STP25N06FI ..STP80N20M5
STP80N70F4 ..STW17N62K3
STW18NM60N ..TK15A60U
TK15D60U ..TPC8036-H
TPC8037-H ..TPCF8001
TPCF8002 ..UT60N03
UT60T03 ..ZVN4525Z
ZVNL110A ..ZXMS6006SG
 
IRF520N All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF520N MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF520N

Type of IRF520N transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 48

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 9.7

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF520N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.2

Package: TO220AB

Equivalent transistors for IRF520N

IRF520N PDF doc:

1.1. irf520n.pdf Size:116K _international_rectifier

IRF520N
IRF520N
PD - 91339A IRF520N HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175°C Operating Temperature Fast Switching RDS(on) = 0.20? Fully Avalanche Rated G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 TO-220AB contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS

1.2. irf520ns.pdf Size:185K _international_rectifier

IRF520N
IRF520N
PD -91340A IRF520NS/L HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF520NS) VDSS = 100V Low-profile through-hole (IRF520NL) 175°C Operating Temperature RDS(on) = 0.20? Fast Switching G Fully Avalanche Rated ID = 9.7A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest D 2 Pak TO-262 possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resi

4.1. irf520.pdf Size:297K _st

IRF520N
IRF520N
IRF520 N-CHANNEL 100V - 0.115 ? - 10A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID IRF520 100 V <0.27 ? 10 A TYPICAL RDS(on) = 0.115? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 2 175 oC OPERATING TEMPERATURE 1 DESCRIPTION TO-220 This MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is INTERNAL SCHEMATIC DIAGRAM also intended for any applications with low gate drive requirements. APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED SOLENOID AND RELAY DRIVERS REGULATOR DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, etc.) ABSOLUTE MAXIMUM RATINGS Symbol

4.2. irf520-1-2-3-fi.pdf Size:502K _st2

IRF520N
IRF520N
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4.3. irf520a.pdf Size:243K _fairchild_semi

IRF520N
IRF520N
IRF520A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.2 A Improved Gate Charge Extended Safe Operating Area TO-220 ? 175 C Operating Temperature µ Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.155 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 C) 9.2 ID A ? Continuous Drain Current (TC=100 C) 6.5 1 IDM Drain Current-Pulsed O 37 A + VGS Gate-to-Source Voltage _ 20 V 2 EAS Single Pulsed Avalanche Energy O 113 mJ IAR Avalanche Current 1 O 9.2 A EAR Repetitive Avalanche Energy 1 O 4.5 mJ dv/dt Peak Diode Recovery dv/dt 3 6.5 V/ns O ? Total Power Dissipation (TC=25 C) W 45 PD ? Linear Derating Factor 0.3 W/ C Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range ?

4.4. irf520v.pdf Size:200K _international_rectifier

IRF520N
IRF520N
PD - 94092 IRF520V HEXFET® Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.165? G Fast Switching Fully Avalanche Rated ID = 9.6A Optimized for SMPS Applications S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB to its wide acceptance throughout the industry. Absolute Maximum Ratings Pa

4.5. irf520vs.pdf Size:129K _international_rectifier

IRF520N
IRF520N
PD - 94306 IRF520VS IRF520VL HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.165? Fast Switching G Fully Avalanche Rated ID = 9.6A Optimized for SMPS Applications S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the D2Pak TO-262 lowest possible on-resistance in any existing surface mount package. The IRF520VS IRF520VL D2Pak is suitable for high current applicatio

4.6. irf520s.pdf Size:179K _international_rectifier

IRF520N
IRF520N

4.7. irf520pbf.pdf Size:214K _international_rectifier

IRF520N
IRF520N
PD - 94850 IRF520PbF • Lead-Free 11/25/03 Document Number: 91017 www.vishay.com 1 IRF520PbF Document Number: 91017 www.vishay.com 2 IRF520PbF Document Number: 91017 www.vishay.com 3 IRF520PbF Document Number: 91017 www.vishay.com 4 IRF520PbF Document Number: 91017 www.vishay.com 5 IRF520PbF Document Number: 91017 www.vishay.com 6 IRF520PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045)

4.8. irf520.pdf Size:180K _international_rectifier

IRF520N
IRF520N

4.9. irf520a.pdf Size:997K _samsung

IRF520N
IRF520N
Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.2 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 Continuous Drain Current (TC=25 ) 9.2 ID A Continuous Drain Current (TC=100 ) 6.5 IDM Drain Current-Pulsed A 37 VGS Gate-to-Source Voltage V 20 EAS Single Pulsed Avalanche Energy mJ 113 IAR Avalanche Current A 9.2 EAR Repetitive Avalanche Energy mJ 4.5 dv/dt Peak Diode Recovery dv/dt V/ns 6.5 Total Power Dissipation (TC=25 ) W 45 PD Linear Derating Factor W/ 0.3 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8? from

4.10. irf520_sihf520.pdf Size:201K _vishay

IRF520N
IRF520N
IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 100 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.27 RoHS* • 175 °C Operating Temperature Qg (Max.) (nC) 16 COMPLIANT • Fast Switching Qgs (nC) 4.4 • Ease of Paralleling Qgd (nC) 7.7 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all S commercial-industrial applications at power dissipation D G S levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF520PbF Lead (Pb)-free SiHF520-E3

See also transistors datasheet: IRF510A , IRF510S , IRF511 , IRF512 , IRF513 , IRF520 , IRF520A , IRF520FI , IRFP150 , IRF520NS , IRF521 , IRF5210 , IRF5210L , IRF5210S , IRF522 , IRF523 , IRF530 .

Keywords

 IRF520N Datasheet  IRF520N Datenblatt  IRF520N RoHS  IRF520N Distributor
 IRF520N Application Notes  IRF520N Component  IRF520N Circuit  IRF520N Schematic
 IRF520N Equivalent  IRF520N Cross Reference  IRF520N Data Sheet  IRF520N Fiche Technique

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