MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF520N
  IRF520N
  IRF520N
 
IRF520N
  IRF520N
  IRF520N
 
IRF520N
  IRF520N
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AP10N70P-A
AP10N70R-A ..AP2R403AGMT-HF
AP2R403GMT-HF ..AP4533GEM-HF
AP4537GYT-HF ..AP92T03GP-HF
AP92T03GS-HF ..AP98T06GI-HF
AP98T06GP ..APT10088HVR
APT10M07JVR ..AUIRF2907Z
AUIRF2907ZS-7P ..AUIRLR2703
AUIRLR2905 ..BLD6G21L-50
BLD6G21LS-50 ..BS107PT
BS108 ..BSP322P
BSP603S2L ..BUK6228-55C
BUK6246-75C ..BUK7Y20-30B
BUK7Y25-40B ..BUZ326
BUZ32H ..CED04N7G
CED05N65 ..CEM9435A
CEM9436A ..CEU83A3
CEU83A3G ..DMP2004TK
DMP2004VK ..FCP9N60N
FCP9N60N ..FDC86244
FDD050N03B ..FDMA0104
FDMA1023PZ ..FDMS8026S
FDMS8027S ..FDPF39N20
FDPF39N20 ..FDS8928A
FDS8934A ..FQAF13N80
FQAF16N50 ..FQP6N80C
FQP6N90C ..FRL230R4
FRL234D ..GWM100-0085X1-SL
GWM100-0085X1-SL ..HAT1023R
HAT1024R ..HAT3018R
HAT3019R ..HUFA76413DK8T_F085
HUFA76419D3S ..IPB65R660CFD
IPB70N04S3-07 ..IPI04CN10NG
IPI052NE7N3G ..IPP50R520CP
IPP530N15N3G ..IRCZ345
IRCZ445 ..IRF543
IRF543FI ..IRF7314
IRF7314Q ..IRF8313
IRF831FI ..IRFBC40AS
IRFBC40L ..IRFIZ34A
IRFIZ34E ..IRFPC40
IRFPC48 ..IRFS4410
IRFS4410Z ..IRFU220
IRFU220A ..IRL3302
IRL3302S ..IRLR3915
IRLR6225 ..IXFC60N20
IXFC74N20P ..IXFK180N085
IXFK180N10 ..IXFN44N50
IXFN44N50Q ..IXFT52N50P2
IXFT58N20 ..IXTA110N055T7
IXTA120N04T2 ..IXTH1N250
IXTH200N075T ..IXTN22N100L
IXTN30N100L ..IXTQ26N60P
IXTQ26P20P ..IXTY48P05T
IXTY4N60P ..KHB8D8N25F2
KHB8D8N25P ..KP780V9
KP784A ..MTB35N06ZL
MTB50P03HDL ..NTB35N15
NTB45N06 ..NTP5404N
NTP5863N ..PHP69N03LT
PHP6N10E ..PSMN063-150D
PSMN069-100YS ..RF1K49221
RF1K49223 ..RJK0396DPA
RJK0397DPA ..RQJ0201UGDQA
RQJ0202VGDQA ..SDF11N90GAF
SDF120JAA-D ..SFS9Z24
SFS9Z34 ..SMG3401
SMG3402 ..SML50H19
SML50H24 ..SPI08N80C3
SPI11N60C3 ..SSG4910N
SSG4920N ..SSM3K320T
SSM3K329R ..SSQ5N50
SSQ6N60 ..STD10N10L-1
STD10N10LT4 ..STD95N4F3
STD95N4LF3 ..STI18NM60N
STI200N6F3 ..STP18N10
STP18N10FI ..STP60N55F3
STP60NF03L ..STV33N10
STV36N06 ..TJ80S04M3L
TJ8S06M3L ..TPC6001
TPC6003 ..TPCA8080
TPCA8081 ..UT2311
UT2312 ..WTL2602
WTL2622 ..ZXMP4A57E6
ZXMP6A13F ..ZXMS6006SG
 
IRF520N All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF520N MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF520N

Type of IRF520N transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 48

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 9.7

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF520N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.2

Package: TO220AB

Equivalent transistors for IRF520N

IRF520N PDF doc:

1.1. irf520n.pdf Size:116K _international_rectifier

IRF520N
IRF520N
PD - 91339A IRF520N HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175°C Operating Temperature Fast Switching RDS(on) = 0.20? Fully Avalanche Rated G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 TO-220AB contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS

1.2. irf520ns.pdf Size:185K _international_rectifier

IRF520N
IRF520N
PD -91340A IRF520NS/L HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF520NS) VDSS = 100V Low-profile through-hole (IRF520NL) 175°C Operating Temperature RDS(on) = 0.20? Fast Switching G Fully Avalanche Rated ID = 9.7A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest D 2 Pak TO-262 possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resi

4.1. irf520.pdf Size:297K _st

IRF520N
IRF520N
IRF520 N-CHANNEL 100V - 0.115 ? - 10A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID IRF520 100 V <0.27 ? 10 A TYPICAL RDS(on) = 0.115? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 2 175 oC OPERATING TEMPERATURE 1 DESCRIPTION TO-220 This MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is INTERNAL SCHEMATIC DIAGRAM also intended for any applications with low gate drive requirements. APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED SOLENOID AND RELAY DRIVERS REGULATOR DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, etc.) ABSOLUTE MAXIMUM RATINGS Symbol

4.2. irf520-1-2-3-fi.pdf Size:502K _st2

IRF520N
IRF520N
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4.3. irf520a.pdf Size:243K _fairchild_semi

IRF520N
IRF520N
IRF520A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.2 A Improved Gate Charge Extended Safe Operating Area TO-220 ? 175 C Operating Temperature µ Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.155 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 C) 9.2 ID A ? Continuous Drain Current (TC=100 C) 6.5 1 IDM Drain Current-Pulsed O 37 A + VGS Gate-to-Source Voltage _ 20 V 2 EAS Single Pulsed Avalanche Energy O 113 mJ IAR Avalanche Current 1 O 9.2 A EAR Repetitive Avalanche Energy 1 O 4.5 mJ dv/dt Peak Diode Recovery dv/dt 3 6.5 V/ns O ? Total Power Dissipation (TC=25 C) W 45 PD ? Linear Derating Factor 0.3 W/ C Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range ?

4.4. irf520v.pdf Size:200K _international_rectifier

IRF520N
IRF520N
PD - 94092 IRF520V HEXFET® Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.165? G Fast Switching Fully Avalanche Rated ID = 9.6A Optimized for SMPS Applications S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB to its wide acceptance throughout the industry. Absolute Maximum Ratings Pa

4.5. irf520vs.pdf Size:129K _international_rectifier

IRF520N
IRF520N
PD - 94306 IRF520VS IRF520VL HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.165? Fast Switching G Fully Avalanche Rated ID = 9.6A Optimized for SMPS Applications S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the D2Pak TO-262 lowest possible on-resistance in any existing surface mount package. The IRF520VS IRF520VL D2Pak is suitable for high current applicatio

4.6. irf520s.pdf Size:179K _international_rectifier

IRF520N
IRF520N

4.7. irf520pbf.pdf Size:214K _international_rectifier

IRF520N
IRF520N
PD - 94850 IRF520PbF • Lead-Free 11/25/03 Document Number: 91017 www.vishay.com 1 IRF520PbF Document Number: 91017 www.vishay.com 2 IRF520PbF Document Number: 91017 www.vishay.com 3 IRF520PbF Document Number: 91017 www.vishay.com 4 IRF520PbF Document Number: 91017 www.vishay.com 5 IRF520PbF Document Number: 91017 www.vishay.com 6 IRF520PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045)

4.8. irf520.pdf Size:180K _international_rectifier

IRF520N
IRF520N

4.9. irf520a.pdf Size:997K _samsung

IRF520N
IRF520N
Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.2 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 Continuous Drain Current (TC=25 ) 9.2 ID A Continuous Drain Current (TC=100 ) 6.5 IDM Drain Current-Pulsed A 37 VGS Gate-to-Source Voltage V 20 EAS Single Pulsed Avalanche Energy mJ 113 IAR Avalanche Current A 9.2 EAR Repetitive Avalanche Energy mJ 4.5 dv/dt Peak Diode Recovery dv/dt V/ns 6.5 Total Power Dissipation (TC=25 ) W 45 PD Linear Derating Factor W/ 0.3 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8? from

4.10. irf520_sihf520.pdf Size:201K _vishay

IRF520N
IRF520N
IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 100 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.27 RoHS* • 175 °C Operating Temperature Qg (Max.) (nC) 16 COMPLIANT • Fast Switching Qgs (nC) 4.4 • Ease of Paralleling Qgd (nC) 7.7 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all S commercial-industrial applications at power dissipation D G S levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF520PbF Lead (Pb)-free SiHF520-E3

See also transistors datasheet: IRF510A , IRF510S , IRF511 , IRF512 , IRF513 , IRF520 , IRF520A , IRF520FI , IRFP150 , IRF520NS , IRF521 , IRF5210 , IRF5210L , IRF5210S , IRF522 , IRF523 , IRF530 .

Keywords

 IRF520N Datasheet  IRF520N Datenblatt  IRF520N RoHS  IRF520N Distributor
 IRF520N Application Notes  IRF520N Component  IRF520N Circuit  IRF520N Schematic
 IRF520N Equivalent  IRF520N Cross Reference  IRF520N Data Sheet  IRF520N Fiche Technique

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