MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF520N
  IRF520N
  IRF520N
 
IRF520N
  IRF520N
  IRF520N
 
IRF520N
  IRF520N
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123N3
BSS123W ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FDB047N10
FDB050AN06A0 ..FDD6688
FDD6690A ..FDMS2734
FDMS3500 ..FDPF15N65
FDPF16N50 ..FDT86102LZ
FDT86106LZ ..FQD17P06
FQD18N20V2 ..FQU1N60C
FQU1N80 ..FSJ055R
FSJ160D ..H5N5006LS
H5N5007P ..HAT2165N
HAT2166H ..HUF75645P3
HUF75645S3S ..IPB083N10N3G
IPB08CNE8NG ..IPD50N04S4-08
IPD50N04S4-10 ..IPP041N12N3G
IPP042N03LG ..IPW60R125C6
IPW60R125CP ..IRF3705
IRF3707Z ..IRF6648
IRF6655 ..IRF7601
IRF7603 ..IRF9Z24N
IRF9Z24NL ..IRFH8334
IRFH8337 ..IRFP254A
IRFP255 ..IRFR9120
IRFR9120N ..IRFS9541
IRFS9542 ..IRFY9120C
IRFY9130 ..IRLI540A
IRLI540N ..IRLZ34NS
IRLZ40 ..IXFH30N50Q3
IXFH30N60P ..IXFM10N90
IXFM11N80 ..IXFR26N50
IXFR26N50Q ..IXFX26N90
IXFX27N80Q ..IXTA86N20T
IXTA88N085T ..IXTH6N90A
IXTH72N20 ..IXTP3N100P
IXTP3N110 ..IXTT82N25P
IXTT88N15 ..KF4N65P
KF4N80F ..KP505G
KP505V ..MCH6604
MCH6613 ..MTC1016S6R
MTC2402Q8 ..MTN3N60I3
MTN3N60J3 ..NDB6060
NDB6060L ..NTD5406N
NTD5407N ..NVD5890N
NVMFD5877NL ..PMBFJ113
PMBFJ210 ..PSMN4R0-25YLC
PSMN4R0-30YL ..RFD3N08L
RFD3N08LSM ..RJK1021DPN
RJK1028DNS ..RSD080P05
RSD100N10 ..SDF15N60GAF
SDF17N60 ..SFU9014
SFU9024 ..SMG5403
SMG5406 ..SML50J77
SML50L37 ..SPD02N60C3
SPD02N60S5 ..SSG4410N
SSG4434N ..SSM3K122TU
SSM3K123TU ..SSP6N70A
SSP6N80A ..STB50N25M5
STB50NF25 ..STD5NK40Z
STD5NK50Z ..STF9NK90Z
STF9NM60N ..STLT20FI
STLT29 ..STP20NF06
STP20NF06L ..STP6N52K3
STP6N60FI ..STT3402N
STT3405P ..STV6NA60
STV7NA40 ..TK130F06K3
TK13A25D ..TPC8012-H
TPC8013-H ..TPCC8007
TPCC8008 ..UT40N03
UT40N03T ..ZVN3310F
ZVN3320A ..ZXMS6006SG
 
IRF520N All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF520N MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF520N

Type of IRF520N transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 48

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 9.7

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF520N transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.2

Package: TO220AB

Equivalent transistors for IRF520N

IRF520N PDF doc:

1.1. irf520n.pdf Size:116K _international_rectifier

IRF520N
IRF520N
PD - 91339A IRF520N HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175°C Operating Temperature Fast Switching RDS(on) = 0.20? Fully Avalanche Rated G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 TO-220AB contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS

1.2. irf520ns.pdf Size:185K _international_rectifier

IRF520N
IRF520N
PD -91340A IRF520NS/L HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF520NS) VDSS = 100V Low-profile through-hole (IRF520NL) 175°C Operating Temperature RDS(on) = 0.20? Fast Switching G Fully Avalanche Rated ID = 9.7A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest D 2 Pak TO-262 possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resi

4.1. irf520.pdf Size:297K _st

IRF520N
IRF520N
IRF520 N-CHANNEL 100V - 0.115 ? - 10A TO-220 LOW GATE CHARGE STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID IRF520 100 V <0.27 ? 10 A TYPICAL RDS(on) = 0.115? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 2 175 oC OPERATING TEMPERATURE 1 DESCRIPTION TO-220 This MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is INTERNAL SCHEMATIC DIAGRAM also intended for any applications with low gate drive requirements. APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED SOLENOID AND RELAY DRIVERS REGULATOR DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, etc.) ABSOLUTE MAXIMUM RATINGS Symbol

4.2. irf520-1-2-3-fi.pdf Size:502K _st2

IRF520N
IRF520N
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4.3. irf520a.pdf Size:243K _fairchild_semi

IRF520N
IRF520N
IRF520A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.2 A Improved Gate Charge Extended Safe Operating Area TO-220 ? 175 C Operating Temperature µ Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.155 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 ? Continuous Drain Current (TC=25 C) 9.2 ID A ? Continuous Drain Current (TC=100 C) 6.5 1 IDM Drain Current-Pulsed O 37 A + VGS Gate-to-Source Voltage _ 20 V 2 EAS Single Pulsed Avalanche Energy O 113 mJ IAR Avalanche Current 1 O 9.2 A EAR Repetitive Avalanche Energy 1 O 4.5 mJ dv/dt Peak Diode Recovery dv/dt 3 6.5 V/ns O ? Total Power Dissipation (TC=25 C) W 45 PD ? Linear Derating Factor 0.3 W/ C Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range ?

4.4. irf520v.pdf Size:200K _international_rectifier

IRF520N
IRF520N
PD - 94092 IRF520V HEXFET® Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.165? G Fast Switching Fully Avalanche Rated ID = 9.6A Optimized for SMPS Applications S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute TO-220AB to its wide acceptance throughout the industry. Absolute Maximum Ratings Pa

4.5. irf520vs.pdf Size:129K _international_rectifier

IRF520N
IRF520N
PD - 94306 IRF520VS IRF520VL HEXFET® Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175°C Operating Temperature RDS(on) = 0.165? Fast Switching G Fully Avalanche Rated ID = 9.6A Optimized for SMPS Applications S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on- resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the D2Pak TO-262 lowest possible on-resistance in any existing surface mount package. The IRF520VS IRF520VL D2Pak is suitable for high current applicatio

4.6. irf520s.pdf Size:179K _international_rectifier

IRF520N
IRF520N

4.7. irf520pbf.pdf Size:214K _international_rectifier

IRF520N
IRF520N
PD - 94850 IRF520PbF • Lead-Free 11/25/03 Document Number: 91017 www.vishay.com 1 IRF520PbF Document Number: 91017 www.vishay.com 2 IRF520PbF Document Number: 91017 www.vishay.com 3 IRF520PbF Document Number: 91017 www.vishay.com 4 IRF520PbF Document Number: 91017 www.vishay.com 5 IRF520PbF Document Number: 91017 www.vishay.com 6 IRF520PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045)

4.8. irf520.pdf Size:180K _international_rectifier

IRF520N
IRF520N

4.9. irf520a.pdf Size:997K _samsung

IRF520N
IRF520N
Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.2 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 100 Continuous Drain Current (TC=25 ) 9.2 ID A Continuous Drain Current (TC=100 ) 6.5 IDM Drain Current-Pulsed A 37 VGS Gate-to-Source Voltage V 20 EAS Single Pulsed Avalanche Energy mJ 113 IAR Avalanche Current A 9.2 EAR Repetitive Avalanche Energy mJ 4.5 dv/dt Peak Diode Recovery dv/dt V/ns 6.5 Total Power Dissipation (TC=25 ) W 45 PD Linear Derating Factor W/ 0.3 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8? from

4.10. irf520_sihf520.pdf Size:201K _vishay

IRF520N
IRF520N
IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 100 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.27 RoHS* • 175 °C Operating Temperature Qg (Max.) (nC) 16 COMPLIANT • Fast Switching Qgs (nC) 4.4 • Ease of Paralleling Qgd (nC) 7.7 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all S commercial-industrial applications at power dissipation D G S levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF520PbF Lead (Pb)-free SiHF520-E3

See also transistors datasheet: IRF510A , IRF510S , IRF511 , IRF512 , IRF513 , IRF520 , IRF520A , IRF520FI , APT50M38JFLL , IRF520NS , IRF521 , IRF5210 , IRF5210L , IRF5210S , IRF522 , IRF523 , IRF530 .

Keywords

 IRF520N Datasheet  IRF520N Datenblatt  IRF520N RoHS  IRF520N Distributor
 IRF520N Application Notes  IRF520N Component  IRF520N Circuit  IRF520N Schematic
 IRF520N Equivalent  IRF520N Cross Reference  IRF520N Data Sheet  IRF520N Fiche Technique

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