All MOSFET. IRF522 Datasheet

 

IRF522 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF522

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 ┬░C

Maximum Drain-Source On-State Resistance (Rds): 0.36 Ohm

Package: TO220

IRF522 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF522 PDF doc:

5.1. irf520.pdf Size:297K _st

IRF522
IRF522

IRF520 N-CHANNEL 100V - 0.115 ? - 10A TO-220 LOW GATE CHARGE STripFETÖ II POWER MOSFET TYPE VDSS RDS(on) ID IRF520 100 V <0.27 ? 10 A TYPICAL RDS(on) = 0.115? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW GATE CHARGE HIGH CURRENT CAPABILITY 3 2 175 oC OPERATING TEMPERATURE 1 DESCRIPTION TO-220 This MOSFET series realized with STMicroelectronics unique STripFETÖ proce

5.2. irf520-1-2-3-fi.pdf Size:502K _st2

IRF522
IRF522

 ■

5.3. irf520a.pdf Size:243K _fairchild_semi

IRF522
IRF522

IRF520A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.2 A Improved Gate Charge Extended Safe Operating Area TO-220 ? 175 C Operating Temperature Á Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.155 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolut

5.4. irf520.pdf Size:180K _international_rectifier

IRF522
IRF522

5.5. irf520s.pdf Size:179K _international_rectifier

IRF522
IRF522

5.6. irf520pbf.pdf Size:214K _international_rectifier

IRF522
IRF522

PD - 94850 IRF520PbF Ľ Lead-Free 11/25/03 Document Number: 91017 www.vishay.com 1 IRF520PbF Document Number: 91017 www.vishay.com 2 IRF520PbF Document Number: 91017 www.vishay.com 3 IRF520PbF Document Number: 91017 www.vishay.com 4 IRF520PbF Document Number: 91017 www.vishay.com 5 IRF520PbF Document Number: 91017 www.vishay.com 6 IRF520PbF TO-220AB Package Outline Dime

5.7. irf520n.pdf Size:116K _international_rectifier

IRF522
IRF522

PD - 91339A IRF520N HEXFET« Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175░C Operating Temperature Fast Switching RDS(on) = 0.20? Fully Avalanche Rated G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, com

5.8. auirf5210s.pdf Size:236K _international_rectifier

IRF522
IRF522

´╗┐AUTOMOTIVE GRADE AUIRF5210S Features HEXFET┬« Power MOSFET l Advanced Planar Technology l P-Channel MOSFET D V(BR)DSS -100V l Low On-Resistance l Dynamic dV/dT Rating RDS(on) max. 60m´üŚ G l 175┬░C Operating Temperature S ID -38A l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax D l Lead-Free, RoHS Compliant l Automotive Qualified * Desc

5.9. irf5210.pdf Size:125K _international_rectifier

IRF522
IRF522

PD - 91434A IRF5210 HEXFET« Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = -100V Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 0.06? Fast Switching G P-Channel ID = -40A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resista

5.10. irf520v.pdf Size:200K _international_rectifier

IRF522
IRF522

PD - 94092 IRF520V HEXFET« Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 0.165? G Fast Switching Fully Avalanche Rated ID = 9.6A Optimized for SMPS Applications S Description Advanced HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve

5.11. irf5210s.pdf Size:186K _international_rectifier

IRF522
IRF522

PD - 91405C IRF5210S/L HEXFET« Power MOSFET Advanced Process Technology D Surface Mount (IRF5210S) VDSS = -100V Low-profile through-hole (IRF5210L) 175░C Operating Temperature RDS(on) = 0.06? Fast Switching G P-Channel ID = -40A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extrem

5.12. irf520vs.pdf Size:129K _international_rectifier

IRF522
IRF522

PD - 94306 IRF520VS IRF520VL HEXFET« Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 100V Dynamic dv/dt Rating 175░C Operating Temperature RDS(on) = 0.165? Fast Switching G Fully Avalanche Rated ID = 9.6A Optimized for SMPS Applications S Description Advanced HEXFET« Power MOSFETs from International Rectifier utilize advanced processing technique

5.13. irf520ns.pdf Size:185K _international_rectifier

IRF522
IRF522

PD -91340A IRF520NS/L HEXFET« Power MOSFET Advanced Process Technology D Surface Mount (IRF520NS) VDSS = 100V Low-profile through-hole (IRF520NL) 175░C Operating Temperature RDS(on) = 0.20? Fast Switching G Fully Avalanche Rated ID = 9.7A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-res

5.14. irf520a.pdf Size:997K _samsung

IRF522
IRF522

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 9.2 A Improved Gate Charge Extended Safe Operating Area 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.155 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Cha

5.15. irf520_sihf520.pdf Size:201K _vishay

IRF522
IRF522

IRF520, SiHF520 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ľ Dynamic dV/dt Rating VDS (V) 100 Available Ľ Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.27 RoHS* Ľ 175 ░C Operating Temperature Qg (Max.) (nC) 16 COMPLIANT Ľ Fast Switching Qgs (nC) 4.4 Ľ Ease of Paralleling Qgd (nC) 7.7 Ľ Simple Drive Requirements Configuration Single Ľ Compliant to RoHS Directive

Datasheet: IRF520A , IRF520FI , IRF520N , IRF520NS , IRF521 , IRF5210 , IRF5210L , IRF5210S , BS170 , IRF523 , IRF530 , IRF5305 , IRF5305L , IRF5305S , IRF530A , IRF530FI , IRF530N .

 


IRF522
  IRF522
  IRF522
  IRF522
 
IRF522
  IRF522
  IRF522
  IRF522
 

social 

LIST

Last Update

MOSFET: AOTF7S60L | AOTF7S60 | AOTF298L | AOTF20S60L | AOTF18N65L | AOTF15S65L | AOTF15S60L | AOTF11S65L | AOD606 | AOD518 | AOD512 | AOD490 | AOD488 | AOD472A | AOD472 |

Enter a full or partial SMD code with a minimum of 2 letters or numbers