All MOSFET. FTK3443 Datasheet

 

FTK3443 MOSFET. Datasheet pdf. Equivalent

Type Designator: FTK3443

Marking Code: R43

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.35 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 30 nS

Drain-Source Capacitance (Cd): 180 pF

Maximum Drain-Source On-State Resistance (Rds): 0.065 Ohm

Package: SOT23-6

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FTK3443 PDF doc:

1.1. ftk3443.pdf Size:236K _first_silicon

FTK3443
FTK3443

SEMICONDUCTOR FTK3443 TECHNICAL DATA P-Channel 20-V(D-S) MOSFET B FEATURE B1 Fast Switching Speed DIM MILLIMETERS 1 6 Low Gate Charge A 2 92±0 1 2 5 A1 1 9±0 1 High Performance Trench Technology for extremely Low RDS(on) B 2 8±0 15 3 4 D B1 1 6±0 1 C 0 95 D 0 4±0 1 G 0 1MAX This P-Channel MOSFET is produced using advanced PowerTrench H 1 1±0 05 process tha

5.1. ftk3415.pdf Size:681K _first_silicon

FTK3443
FTK3443

SEMICONDUCTOR FTK3415 TECHNICAL DATA DESCRIPTION D The FTK3415 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as G a load switch applications. S GENERAL FEATURES Schematic diagram ● VDS = -20V,ID =-4A RDS(ON) < 73mΩ @ VGS=-1.8V RDS(ON) < 60mΩ @ VGS=-2.5V R

5.2. ftk3415l.pdf Size:478K _first_silicon

FTK3443
FTK3443

SEMICONDUCTOR FTK3415L TECHNICAL DATA P-Channel 20V(D-S) MOSFET ID V(BR)DSS RDS(on)MAX SOT-23-6L 50mΩ@-4.5V -4.0A -20V 60mΩ@-2.5V 73mΩ@-1. 8V FEATURE APPLICATION Excellent RDS(ON), low gate charge,low gate voltage Load switch and in PWM applicatopns High power and current handing capability MARKING: Equivalent Circuit PIN1 Maximum ratings (Ta=25℃ unless otherwise

5.3. ftk3407.pdf Size:229K _first_silicon

FTK3443
FTK3443

SEMICONDUCTOR FTK3407 TECHNICAL DATA D DESCRIPTION The FTK3407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES D ● VDS = -30V,ID = -4.1A 3 RDS(ON) < 87mΩ @ VGS=-4.5V RDS(ON) < 60m

5.4. ftk3404.pdf Size:305K _first_silicon

FTK3443
FTK3443

SEMICONDUCTOR FTK3404 TECHNICAL DATA N-Channel Enhancement Mode Field Effect Transistor ID V(BR)DSS RDS(on)MAX 3 30mΩ@ 10V 30V 5.8A 2 1 42mΩ@4.5V SOT–23 1. GATE DESCRIPTION 2. SOURCE 3. DRAIN The FTK3404 use advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suit able for use as a load switch or in PWM applications.The s

5.5. ftk3407l.pdf Size:380K _first_silicon

FTK3443
FTK3443

SEMICONDUCTOR FTK3407L TECHNICAL DATA P-Channel Enhancement Mode Field Effect Transistor General Description SOT-23-6L The FTK3407L uses advanced trench technology to provide excellent RDS(on) with low gate charge. This device is suitable for use as a load switch or in PWM applications. MARKING: R7 Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit

5.6. ftk3439kd.pdf Size:578K _first_silicon

FTK3443
FTK3443

SEMICONDUCTOR FTK3439KD TECHNICAL DATA N channel+P Channel MOS FET ID V(BR)DSS RDS(on)MAX SOT-363 380mΩ@4.5V 450mΩ@2.5V 20V 0.75A 800mΩ@1.8V 520mΩ@-4.5V -20V 700mΩ@-2.5V -0.66A 950mΩ@-1.8V FEATURE APPLICATION Surface Mount Package Load/ Power Switching Interfacing Switching Low RDS(on) Operated at Low Logic Level Gate Drive Battery Management for

5.7. ftk3400.pdf Size:232K _first_silicon

FTK3443
FTK3443

SEMICONDUCTOR FTK3400 TECHNICAL DATA N-Channel Enhancement Mode Field Effect Transistor D FEATURE G High dense cell design for extremely low R S DS(ON) Schematic diagram Exceptional on-resistance and maximum DC current capability D 3 R0 G 1 2 S Marking and pin Assignment SOT-23 top view Maximum ratings ( Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit

5.8. ftk3401.pdf Size:236K _first_silicon

FTK3443
FTK3443

SEMICONDUCTOR FTK3401 TECHNICAL DATA D DESCRIPTION The FTK3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram GENERAL FEATURES D ● VDS = -30V,ID = -4.2A 3 RDS(ON) < 90mΩ @ VGS=-2.5V RDS(ON) < 75m

Datasheet: FTK3400 , FTK3401 , FTK3404 , FTK3407 , FTK3407L , FTK3415 , FTK3415L , FTK3439KD , IRFP460 , FTK35N03PDFN33 , FTK35N03PDFN56 , FTK3610 , FTK3615 , FTK3620 , FTK3N80I , FTK3N80D , FTK3N80P .

 


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