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IRF550A MOSFET (IC) Datasheet. Cross Reference Search. IRF550A Equivalent

Type Designator: IRF550A

Type of IRF550A transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 167

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 40

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF550A transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1750

Maximum drain-source on-state resistance (Rds), Ohm: 0.04

Package: TO220

IRF550A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF550A PDF doc:

1.1. irf550a.pdf Size:261K _fairchild_semi

IRF550A
IRF550A

IRF550A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 40 A Improved Gate Charge Extended Safe Operating Area TO-220 ? 175 C Operating Temperature A (Max.) @ VDS = 100V Lower Leakage Current : 10 ? Lower RDS(ON) : 0.032 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolu

1.2. irf550a.pdf Size:956K _samsung

IRF550A
IRF550A

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 40 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.032 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings

See also transistors datasheet: IRF540A , IRF540FI , IRF540N , IRF540NL , IRF540NS , IRF541 , IRF542 , IRF543 , STF5N52U , IRF610 , IRF610A , IRF610S , IRF611 , IRF612 , IRF613 , IRF614 , IRF614A .

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 IRF550A - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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