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IRF550A MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF550A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 167 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Drain Current |Id|: 40 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 1750 pF

Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm

Package: TO220

IRF550A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF550A PDF doc:

1.1. irf550a.pdf Size:261K _fairchild_semi

IRF550A
IRF550A

IRF550A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 40 A Improved Gate Charge Extended Safe Operating Area TO-220 ? 175 C Operating Temperature A (Max.) @ VDS = 100V Lower Leakage Current : 10 ? Lower RDS(ON) : 0.032 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolu

1.2. irf550a.pdf Size:956K _samsung

IRF550A
IRF550A

Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology ? RDS(on) = 0.04 Rugged Gate Oxide Technology Lower Input Capacitance ID = 40 A Improved Gate Charge Extended Safe Operating Area ? 175 Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V ? Lower RDS(ON) : 0.032 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings

Datasheet: IRF540A , IRF540FI , IRF540N , IRF540NL , IRF540NS , IRF541 , IRF542 , IRF543 , STF5N52U , IRF610 , IRF610A , IRF610S , IRF611 , IRF612 , IRF613 , IRF614 , IRF614A .

 


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