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IRF610S MOSFET (IC) Datasheet. Cross Reference Search. IRF610S Equivalent

Type Designator: IRF610S

Type of IRF610S transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 36

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 3.3

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF610S transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 1.5

Package: D2PAK

IRF610S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF610S PDF doc:

1.1. irf610spbf.pdf Size:1891K _international_rectifier

IRF610S
IRF610S

PD- 95747 IRF610SPbF • Lead-Free 8/23/04 Document Number: 91024 www.vishay.com 1 IRF610SPbF Document Number: 91024 www.vishay.com 2 IRF610SPbF Document Number: 91024 www.vishay.com 3 IRF610SPbF Document Number: 91024 www.vishay.com 4 IRF610SPbF Document Number: 91024 www.vishay.com 5 IRF610SPbF Document Number: 91024 www.vishay.com 6 IRF610SPbF Peak Diode Recovery dv/dt

1.2. irf610s.pdf Size:178K _international_rectifier

IRF610S
IRF610S

4.1. irf610.pdf Size:148K _fairchild_semi

IRF610S
IRF610S

4.2. irf610b.pdf Size:866K _fairchild_semi

IRF610S
IRF610S

IRF610B/IRFS610B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.3A, 200V, RDS(on) = 1.5? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 7.2 nC) planar, DMOS technology. • Low Crss ( typical 6.8 pF) This advanced technology has been especially tailored to • Fast switching minimize o

4.3. irf6100.pdf Size:286K _international_rectifier

IRF610S
IRF610S

PD - 93930C IRF6100 HEXFET® Power MOSFET Ultra Low RDS(on) per Footprint Area VDSS RDS(on) max ID Low Thermal Resistance -20V 0.065?@VGS = -4.5V -5.1A P-Channel MOSFET 0.095?@VGS = -2.5V -4.1A One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel Description D True chip-scale packaging is available from International Rectifier. Through the use

4.4. irf610.pdf Size:174K _international_rectifier

IRF610S
IRF610S

4.5. irf610pbf.pdf Size:2166K _international_rectifier

IRF610S
IRF610S

PD - 94973 IRF610PbF • Lead-Free 02/02/04 Document Number: 91023 www.vishay.com 1 IRF610PbF Document Number: 91023 www.vishay.com 2 IRF610PbF Document Number: 91023 www.vishay.com 3 IRF610PbF Document Number: 91023 www.vishay.com 4 IRF610PbF Document Number: 91023 www.vishay.com 5 IRF610PbF Document Number: 91023 www.vishay.com 6 IRF610PbF TO-220AB Package Outline Dime

4.6. irf610a.pdf Size:930K _samsung

IRF610S
IRF610S

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 1.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.3 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 1.169 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

4.7. irf610_sihf610.pdf Size:202K _vishay

IRF610S
IRF610S

IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 200 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 1.5 RoHS* • Fast Switching Qg (Max.) (nC) 8.2 COMPLIANT • Ease of Paralleling Qgs (nC) 1.8 Qgd (nC) 4.5 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-2

See also transistors datasheet: IRF540NL , IRF540NS , IRF541 , IRF542 , IRF543 , IRF550A , IRF610 , IRF610A , 75339P , IRF611 , IRF612 , IRF613 , IRF614 , IRF614A , IRF614S , IRF615 , IRF620 .

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 IRF610S - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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