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CM8N06C MOSFET (IC) Datasheet. Cross Reference Search. CM8N06C Equivalent

Type Designator: CM8N06C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd), W: 60

Maximum Drain-Source Voltage |Vds|, V: 60

Maximum Gate-Source Voltage |Vgs|, V: 20

Maximum Drain Current |Id|, A: 8

Maximum Junction Temperature (Tj), °C: 150

Rise Time (tr), nS:

Drain-Source Capacitance (Cd), pF:

Maximum Drain-Source On-State Resistance (Rds), Ohm: 0.2

Package: TO251_TO252

CM8N06C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CM8N06C PDF doc:

1.1. cm8n06c.pdf Size:130K _jdsemi

CM8N06C
CM8N06C

R CM8N06C 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆60V N-Channel Trench-MOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于电子镇流器、低功率 开关电源等功率开关电路 2.主要特点 开关速度快 TO-251 TO-252 低栅极电荷量 1栅

See also transistors datasheet: CM6N40 , CM6N40C , CM6N60 , CM6N60F , CM7N60 , CM7N60F , CM7N65F , CM84N06 , J112 , CM8N50 , CM8N50F , CM8N60 , CM8N60F , CM8N65F , CM8N80 , CM8N80F , CM9N20 .

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