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CM8N06C MOSFET. Datasheet pdf. Equivalent

Type Designator: CM8N06C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 60 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm

Package: TO251_TO252

CM8N06C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CM8N06C PDF doc:

1.1. cm8n06c.pdf Size:130K _jdsemi

CM8N06C
CM8N06C

R CM8N06C 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆60V N-Channel Trench-MOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于电子镇流器、低功率 开关电源等功率开关电路 2.主要特点 开关速度快 TO-251 TO-252 低栅极电荷量 1栅

Datasheet: CM6N40 , CM6N40C , CM6N60 , CM6N60F , CM7N60 , CM7N60F , CM7N65F , CM84N06 , J112 , CM8N50 , CM8N50F , CM8N60 , CM8N60F , CM8N65F , CM8N80 , CM8N80F , CM9N20 .

 


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