All MOSFET Datasheet

 

IRF622 MOSFET (IC) Datasheet. Cross Reference Search. IRF622 Equivalent

Type Designator: IRF622

Type of IRF622 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 40

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 4

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF622 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 1.2

Package: TO220

IRF622 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF622 PDF doc:

5.1. irf620.pdf Size:184K _st

IRF622
IRF622

IRF620 IRF620FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID IRF620 200 V < 0.8 ? 6 A IRF620FI 200 V < 0.8 ? 4 A TYPICAL R = 0.55 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 2 2 APPLICATIONS 1 1 HIGH CURRENT, HIGH SPEED SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) TO-220 ISOWATT220 MOTOR C

5.2. irf620-1-2-3-fi.pdf Size:508K _st2

IRF622
IRF622

˙ţ

5.3. irf624b_irfs624b.pdf Size:874K _fairchild_semi

IRF622
IRF622

November 2001 IRF624B/IRFS624B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.1A, 250V, RDS(on) = 1.1? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13.5 nC) planar, DMOS technology. • Low Crss ( typical 9.5 pF) This advanced technology has been especially tailored to • Fast switc

5.4. irf620b.pdf Size:875K _fairchild_semi

IRF622
IRF622

November 2001 IRF620B/IRFS620B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 5.0A, 200V, RDS(on) = 0.8? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 12 nC) planar, DMOS technology. • Low Crss ( typical 10 pF) This advanced technology has been especially tailored to • Fast switchin

5.5. irf620s.pdf Size:182K _international_rectifier

IRF622
IRF622

5.6. irf6201pbf.pdf Size:247K _international_rectifier

IRF622
IRF622

PD - 97500A IRF6201PbF HEXFET® Power MOSFET VDS 20 V RDS(on) max 2.45 mΩ (@VGS = 4.5V) RDS(on) max 2.75 mΩ (@VGS = 2.5V) Qg (typical) 130 nC SO-8 ID 27 A (@TA = 25°C) Applications • OR-ing or hot-swap MOSFET • Battery operated DC motor inverter MOSFET • System/Load switch Features and Benefits Features Benefits Low RDSon (≤ 2.45mΩ @ Vgs = 4.5V) Lower

5.7. irf624spbf.pdf Size:1773K _international_rectifier

IRF622
IRF622

PD- 95985 IRF624SPbF • Lead-Free 12/21/04 Document Number: 91030 www.vishay.com 1 IRF624SPbF Document Number: 91030 www.vishay.com 2 IRF624SPbF Document Number: 91030 www.vishay.com 3 IRF624SPbF Document Number: 91030 www.vishay.com 4 IRF624SPbF Document Number: 91030 www.vishay.com 5 IRF624SPbF Document Number: 91030 www.vishay.com 6 IRF624SPbF Peak Diode Recovery dv/d

5.8. irf620spbf.pdf Size:1844K _international_rectifier

IRF622
IRF622

PD- 95748 IRF620SPbF • Lead-Free 8/23/04 Document Number: 91028 www.vishay.com 1 IRF620SPbF Document Number: 91028 www.vishay.com 2 IRF620SPbF Document Number: 91028 www.vishay.com 3 IRF620SPbF Document Number: 91028 www.vishay.com 4 IRF620SPbF Document Number: 91028 www.vishay.com 5 IRF620SPbF Document Number: 91028 www.vishay.com 6 IRF620SPbF Peak Diode Recovery dv/dt

5.9. irf6215s.pdf Size:182K _international_rectifier

IRF622
IRF622

PD - 91643 IRF6215S/L HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF6215S) VDSS = -150V Low-profile through-hole (IRF6215L) 175°C Operating Temperature RDS(on) = 0.29? Fast Switching G P-Channel ID = -13A Fully Avalanche Rated S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extrem

5.10. irf620.pdf Size:886K _international_rectifier

IRF622
IRF622

PD - 94870 IRF620PbF • Lead-Free 12/5/03 Document Number: 91027 www.vishay.com 1 IRF620PbF Document Number: 91027 www.vishay.com 2 IRF620PbF Document Number: 91027 www.vishay.com 3 IRF620PbF Document Number: 91027 www.vishay.com 4 IRF620PbF Document Number: 91027 www.vishay.com 5 IRF620PbF Document Number: 91027 www.vishay.com 6 IRF620PbF TO-220AB Package Outline Dimen

5.11. irf624.pdf Size:275K _international_rectifier

IRF622
IRF622

PD - 95626 IRF624PbF • Lead-Free 8/3/04 Document Number: 91029 www.vishay.com 1 IRF624PbF Document Number: 91029 www.vishay.com 2 IRF624PbF Document Number: 91029 www.vishay.com 3 IRF624PbF Document Number: 91029 www.vishay.com 4 IRF624PbF Document Number: 91029 www.vishay.com 5 IRF624PbF Document Number: 91029 www.vishay.com 6 IRF624PbF Document Number: 91029 www.visha

5.12. irf624s.pdf Size:175K _international_rectifier

IRF622
IRF622

5.13. irf6216.pdf Size:103K _international_rectifier

IRF622
IRF622

PD - 94297 IRF6216 SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID Reset Switch for Active Clamp Reset ? -150V 0.240? ?@VGS =-10V -2.2A ? ? DC-DC converters Benefits Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including 3 Effective COSS to Simplify Design (See 6 S D App. Note AN1001) 4 5 G D

5.14. irf6217.pdf Size:105K _international_rectifier

IRF622
IRF622

PD - 94359 IRF6217 SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID Reset Switch for Active Clamp Reset ? -150V 2.4? ?@VGS =-10V -0.7A ? ? DC to DC converters Benefits Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including 3 6 Effective COSS to Simplify Design (See S D App. Note AN1001) 4 5 G D

5.15. irf6215.pdf Size:125K _international_rectifier

IRF622
IRF622

PD - 91479B IRF6215 HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -150V 175°C Operating Temperature Fast Switching RDS(on) = 0.29? P-Channel G Fully Avalanche Rated ID = -13A Description S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This

5.16. irf624a.pdf Size:944K _samsung

IRF622
IRF622

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 1.1 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 250V ? Low RDS(ON) : 0.742 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

5.17. irf620a.pdf Size:931K _samsung

IRF622
IRF622

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.626 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V

5.18. irf624_sihf624.pdf Size:196K _vishay

IRF622
IRF622

IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 250 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 1.1 RoHS* • Fast Switching Qg (Max.) (nC) 14 COMPLIANT • Ease of Paralleling Qgs (nC) 2.7 • Simple Drive Requirements Qgd (nC) 7.8 Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-22

See also transistors datasheet: IRF620 , IRF620A , IRF620FI , IRF620S , IRF621 , IRF6215 , IRF6215L , IRF6215S , J310 , IRF623 , IRF624 , IRF624A , IRF624S , IRF625 , IRF630 , IRF630A , IRF630FI .

Search Terms:

 IRF622 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


IRF622
  IRF622
  IRF622
  IRF622
 
IRF622
  IRF622
  IRF622
  IRF622
 

social 

LIST

Last Update

MOSFET: IXFH50N50P3 | IXFQ50N50P3 | IXFT50N50P3 | IPF06N03LA | IPS06N03LA | IPU06N03LA | IPD06N03LA | 2SK1202 | SIHFD123 | IRFD123 | IRF630MFP | SSM70T03J | SSM70T03H | AP9916J | AP9916H |

Enter a full or partial SMD code with a minimum of 2 letters or numbers