IRF624A MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF624A

Type of IRF624A transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 49

Maximum drain-source voltage |Uds|, V: 250V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 4.1

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF624A transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 335

Maximum drain-source on-state resistance (Rds), Ohm: 1.1

Package: TO220

Equivalent transistors for IRF624A

IRF624A PDF documents for downloads:

1.1. irf624a.pdf Size:944K _samsung

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 1.1 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 250V ? Low RDS(ON) : 0.742 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 250 o Continuous Drain Current (TC=25 C) 4.1 ID A o C Continuous Drain Current (TC=100 ) 2.6 1 IDM Drain Current-Pulsed A O 16 VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ O 84 1 IAR Avalanche Current O 4.1 A EAR Repetitive Avalanche Energy 1 O 4.9 mJ 3 dv/dt Peak Diode Recovery dv/dt V/ns 4.8 O Total Power Dissipation (TC=25 oC) 49 W PD Linear Derating Factor W/ oC 0.39 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 Purposes, 1

4.1. irf624b_irfs624b.pdf Size:874K _fairchild_semi

November 2001 IRF624B/IRFS624B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.1A, 250V, RDS(on) = 1.1? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13.5 nC) planar, DMOS technology. • Low Crss ( typical 9.5 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter IRF624B IRFS624B Units VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25°C) 4.1 4.1 * A - Continuous (TC = 100°C) 2.

4.2. irf624spbf.pdf Size:1773K _international_rectifier

PD- 95985 IRF624SPbF • Lead-Free 12/21/04 Document Number: 91030 www.vishay.com 1 IRF624SPbF Document Number: 91030 www.vishay.com 2 IRF624SPbF Document Number: 91030 www.vishay.com 3 IRF624SPbF Document Number: 91030 www.vishay.com 4 IRF624SPbF Document Number: 91030 www.vishay.com 5 IRF624SPbF Document Number: 91030 www.vishay.com 6 IRF624SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - + - • dv/dt controlled by RG + • ISD controlled by Duty Factor "D" - • D.U.T. - Device Under Test * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = Period P.W. VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent ISD R

4.3. irf624.pdf Size:275K _international_rectifier

PD - 95626 IRF624PbF • Lead-Free 8/3/04 Document Number: 91029 www.vishay.com 1 IRF624PbF Document Number: 91029 www.vishay.com 2 IRF624PbF Document Number: 91029 www.vishay.com 3 IRF624PbF Document Number: 91029 www.vishay.com 4 IRF624PbF Document Number: 91029 www.vishay.com 5 IRF624PbF Document Number: 91029 www.vishay.com 6 IRF624PbF Document Number: 91029 www.vishay.com 7 IRF624PbF Peak Diode Recovery dv/dt Test + Circuit Layout Consider- ations • Low Stray Inductance • Ground Plane - + - + - + • dv/dt controlled by RG • ISD controlled by Duty Factor - * Reverse Polarity for P-Channel Driver Gate Drive P.W. Period D = Period P.W. VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent ISD Ripple ? 5% *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig. 14 For N and P Channel

4.4. irf624s.pdf Size:175K _international_rectifier

4.5. irf624_sihf624.pdf Size:196K _vishay

IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 250 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 1.1 RoHS* • Fast Switching Qg (Max.) (nC) 14 COMPLIANT • Ease of Paralleling Qgs (nC) 2.7 • Simple Drive Requirements Qgd (nC) 7.8 Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all S commercial-industrial applications at power dissipation D levels to approximately 50 W. The low thermal resistance S G and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF624PbF Lead (Pb)-free SiHF624-E3 IRF624 SnPb SiHF624 ABSOLUTE

See also transistors datasheet: IRF620S , IRF621 , IRF6215 , IRF6215L , IRF6215S , IRF622 , IRF623 , IRF624 , BF966 , IRF624S , IRF625 , IRF630 , IRF630A , IRF630FI , IRF630S , IRF631 , IRF632 .

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