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IRF624S MOSFET (IC) Datasheet. Cross Reference Search. IRF624S Equivalent

Type Designator: IRF624S

Type of IRF624S transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 50

Maximum drain-source voltage |Uds|, V: 250

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 4.4

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF624S transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 1.1

Package: D2PAK

IRF624S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF624S PDF doc:

1.1. irf624spbf.pdf Size:1773K _international_rectifier

IRF624S
IRF624S

PD- 95985 IRF624SPbF • Lead-Free 12/21/04 Document Number: 91030 www.vishay.com 1 IRF624SPbF Document Number: 91030 www.vishay.com 2 IRF624SPbF Document Number: 91030 www.vishay.com 3 IRF624SPbF Document Number: 91030 www.vishay.com 4 IRF624SPbF Document Number: 91030 www.vishay.com 5 IRF624SPbF Document Number: 91030 www.vishay.com 6 IRF624SPbF Peak Diode Recovery dv/d

1.2. irf624s.pdf Size:175K _international_rectifier

IRF624S
IRF624S

4.1. irf624b_irfs624b.pdf Size:874K _fairchild_semi

IRF624S
IRF624S

November 2001 IRF624B/IRFS624B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.1A, 250V, RDS(on) = 1.1? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13.5 nC) planar, DMOS technology. • Low Crss ( typical 9.5 pF) This advanced technology has been especially tailored to • Fast switc

4.2. irf624.pdf Size:275K _international_rectifier

IRF624S
IRF624S

PD - 95626 IRF624PbF • Lead-Free 8/3/04 Document Number: 91029 www.vishay.com 1 IRF624PbF Document Number: 91029 www.vishay.com 2 IRF624PbF Document Number: 91029 www.vishay.com 3 IRF624PbF Document Number: 91029 www.vishay.com 4 IRF624PbF Document Number: 91029 www.vishay.com 5 IRF624PbF Document Number: 91029 www.vishay.com 6 IRF624PbF Document Number: 91029 www.visha

4.3. irf624a.pdf Size:944K _samsung

IRF624S
IRF624S

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 1.1 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 250V ? Low RDS(ON) : 0.742 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

4.4. irf624_sihf624.pdf Size:196K _vishay

IRF624S
IRF624S

IRF624, SiHF624 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 250 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 1.1 RoHS* • Fast Switching Qg (Max.) (nC) 14 COMPLIANT • Ease of Paralleling Qgs (nC) 2.7 • Simple Drive Requirements Qgd (nC) 7.8 Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-22

See also transistors datasheet: IRF621 , IRF6215 , IRF6215L , IRF6215S , IRF622 , IRF623 , IRF624 , IRF624A , IRF5305 , IRF625 , IRF630 , IRF630A , IRF630FI , IRF630S , IRF631 , IRF632 , IRF633 .

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