MOSFET Datasheet


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IRF630
  IRF630
  IRF630
 
IRF630
  IRF630
  IRF630
 
IRF630
  IRF630
 
 
List
10N30 ..2N5949
2N5950 ..2N6965
2N6966 ..2SJ133
2SJ134 ..2SJ554
2SJ555 ..2SK1522
2SK1526 ..2SK216
2SK2161 ..2SK2771-01R
2SK2776 ..2SK3147L
2SK3147S ..2SK368
2SK3683-01MR ..2SK531
2SK532 ..3N65K
3N65Z ..6N10
6N40 ..AP1203AGMT-HF
AP1332GEU-HF ..AP30N30WI
AP30P10GH-HF ..AP4563GH-HF
AP4563GM ..AP92U03GMT-HF
AP92U03GP-HF ..AP9922GEO-HF
AP9923GEO-HF ..APT10M19SVR
APT10M25BVFR ..AUIRF3305
AUIRF3415 ..AUIRLR3410
AUIRLR3636 ..BLF147
BLF175 ..BS270
BS870 ..BSP92P
BSR315P ..BUK653R2-55C
BUK653R3-30C ..BUK9213-30A
BUK9214-30A ..BUZ50A
BUZ50A-220M ..CED20P06
CED20P10 ..CEP02N6G
CEP02N7G ..CPH3351
CPH3355 ..DMP2104V
DMP210DUDJ ..FCPF7N60NT
FCPF9N60NT ..FDD18N20LZ
FDD20AN06A0_F085 ..FDMA3023PZ
FDMA3028N ..FDMS86105
FDMS86200 ..FDPF5N60NZ
FDPF680N10T ..FDS8978
FDS8978 ..FQB25N33TM_F085
FQB27P06 ..FQP9N90C
FQP9P25 ..FRM130D
FRM130H ..GWM160-0055X1-SL
GWM160-0055X1-SMD ..HAT1047R
HAT1047RJ ..HEPF2007A
HIRF630 ..IPA057N08N3G
IPA075N15N3G ..IPB80N04S3-03
IPB80N04S3-04 ..IPI100P03P3L-04
IPI110N20N3G ..IPP60R250CP
IPP60R280C6 ..IRF1010Z
IRF1010ZL ..IRF610S
IRF611 ..IRF7328
IRF7329 ..IRF840S
IRF841 ..IRFBL12N50A
IRFD014 ..IRFL110
IRFL210 ..IRFPG30
IRFPG40 ..IRFS520
IRFS520A ..IRFU310
IRFU310A ..IRL3705ZL
IRL3705ZS ..IRLR8729
IRLR8743 ..IXFE48N50Q
IXFE48N50QD2 ..IXFK240N15T2
IXFK24N100 ..IXFN48N60P
IXFN50N50 ..IXFT70N20Q3
IXFT74N20 ..IXTA15P15T
IXTA160N04T2 ..IXTH220N075T
IXTH22N50P ..IXTN90P20P
IXTP01N100D ..IXTQ40N50Q
IXTQ42N25P ..IXTZ35N25MB
IXTZ42N20MA ..KMA2D7DP20X
KMA2D8P20X ..KTK5132S
KTK5132U ..NDB4060
NDB4060L ..NTD4855N
NTD4856N ..NTUD3127C
NTUD3169CZ ..PHX7N60E
PHX8N50E ..PSMN2R7-30PL
PSMN2R8-40PS ..RFD7N10LESM
RFD8P05 ..RJK1052DPB
RJK1053DPB ..RSD175N10
RSD200N05 ..SDF3N90
SDF40N50JAM ..SGSP321
SGSP322 ..SML1004RGN
SML1004RKN ..SMN03T80IS
SMN0470F ..SSD15N10
SSD20N06-90D ..SSM3J09FU
SSM3J108TU ..SSM6N04FU
SSM6N05FU ..STB14NM50N
STB150NF04 ..STD38NH02L
STD3LN62K3 ..STF35N65M5
STF3LN62K3 ..STL60N3LLH5
STL65DN3LLH5 ..STP38N06
STP3LN62K3 ..STP9NK70Z
STP9NK70ZFP ..STW45NM60D
STW47NM60ND ..TK3A60DA
TK3A65D ..TPC8109
TPC8110 ..TPCP8301
TPCP8302 ..WTN9575
WTN9973 ..ZXMP6A16K
ZXMP6A17DN8 ..ZXMS6006SG
 
IRF630 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF630 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF630

Type of IRF630 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 100

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 10

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF630 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1500

Maximum drain-source on-state resistance (Rds), Ohm: 0.4

Package: TO220

Equivalent transistors for IRF630

IRF630 PDF doc:

1.1. irf630_s_1.pdf Size:99K _philips

IRF630
IRF630
Philips Semiconductors Product specification N-channel TrenchMOS? transistor IRF630, IRF630S FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 9 A g RDS(ON) ? 400 m? s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The IRF630 is supplied in the SOT78 (TO220AB) conventional leaded package The IRF630S is supplied in the SOT404 (D2PAK) surface mounting package PINNING SOT78 (TO220AB) SOT404 (D2PAK) PIN DESCRIPTION tab tab 1 gate 2 drain1 3 source 2 tab drain 1 3 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drain-source vo

1.2. irf630s.pdf Size:85K _st

IRF630
IRF630
IRF630S ? N - CHANNEL 200V - 0.35? - 9A- D2PAK MESH OVERLAY? MOSFET TYPE VDSS RDS(on) ID IRF630S 200 V < 0.40 ? 9 A TYPICAL R = 0.35 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED FOR THROUGH-HOLE VERSION CONTACT 3 SALES OFFICE 1 DESCRIPTION D2PAK This power MOSFET is designed using the TO-263 companys consolidated strip layout-based MESH (suffix T4) OVERLAY? process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS INTERNAL SCHEMATIC DIAGRAM HIGH CURRENT SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 200 V VDGR Drain- gate Voltage (RGS = 20 k?) 200 V V Gate-source Voltage 20 V GS o ID Drain Current (continuous) at Tc = 25 C9 A o ID Drain Current (

1.3. irf630.pdf Size:104K _st

IRF630
IRF630
IRF630 IRF630FP ? N - CHANNEL 200V - 0.35? - 9A - TO-220/FP MESH OVERLAY? MOSFET TYPE VDSS RDS(on) ID IRF630 200 V < 0.40 ? 9 A IRF630FP 200 V < 0.40 ? 9 A TYPICAL R = 0.35 ? DS(on) EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION 3 3 2 2 This power MOSFET is designed using he 1 1 companys consolidated strip layout-based MESH OVERLAY process. This technology matches ? TO-220 TO-220FP and improves the performances compared with standard parts from various sources. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF630 IRF630FP VDS Drain-source Voltage (VGS = 0) 200 V VDGR Drain- gate Voltage (RGS = 20 k ) 200 V ? VGS Gate-source Voltage 20 V o ID Drain Current (continuous) at Tc = 25 C 9 9(**) A o ID Drain Current (continuou

1.4. irf630m.pdf Size:343K _st

IRF630
IRF630
IRF630M IRF630MFP N-CHANNEL 200V - 0.35? - 9A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID IRF630M 200 V < 0.40 ? 9 A IRF630FPM 200 V < 0.40 ? 9 A TYPICAL RDS(on) = 0.35 ? EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES 3 3 GATE CHARGE MINIMIZED 2 2 1 1 TO-220 TO-220FP DESCRIPTION This power MOSFET is designed using the compa- nys consolidated strip layout-based MESH OVER- LAY process. This technology matches and INTERNAL SCHEMATIC DIAGRAM improves the performances compared with standard parts from various sources. Isolated TO-220 option simplifies assembly and cuts risk of accidental short circuit in crowded monitor PCBs. .APPLICATIONS MONITOR DISPLAYS GENERAL PURPOSE SWITCH ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF630M IRF630MFP VDS Drain-source Voltage (VGS = 0) 200 V VDGR Drain-gate Voltage (RGS = 20 k?) 200 V VGS Gate- source Voltage 20 V ID Drain Current (continuos) at TC = 25C 9 9 (**) A ID

1.5. irf630_irf630fp.pdf Size:339K _st

IRF630
IRF630
IRF630 IRF630FP N-channel 200V - 0.35? - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET General features Type VDSS RDS(on) ID IRF630 200V <0.40? 9A IRF630FP 200V <0.40? 9A Extremely high dv/dt capability 3 3 2 2 Very low intrinsic capacitances 1 1 TO-220 TO-220FP Gate charge minimized Description This power MOSFET is designed using the companys consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with Internal schematic diagram standard parts from various sources. Applications Switching application Order codes Part number Marking Package Packaging IRF630 IRF630 TO-220 Tube IRF630FP IRF630FP TO-220FP Tube August 2006 Rev 9 1/14 www.st.com 14 Contents IRF630 - IRF630FP Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.6. irf630.pdf Size:177K _fairchild_semi

IRF630
IRF630

1.7. irf630b.pdf Size:859K _fairchild_semi

IRF630
IRF630
IRF630B/IRFS630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC) planar, DMOS technology. Low Crss ( typical 22 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter IRF630B IRFS630B Units VDSS Drain-Source Voltage 200 V ID Drain Current - Continuous (TC = 25

1.8. irf630n.pdf Size:155K _international_rectifier

IRF630
IRF630
PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology HEXFET Power MOSFET Dynamic dv/dt Rating 175C Operating Temperature D VDSS = 200V Fast Switching Fully Avalanche Rated RDS(on) = 0.30? Ease of Paralleling G Simple Drive Requirements Description ID = 9.3A Fifth Generation HEXFET Power MOSFETs from S International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surf

1.9. irf630pbf.pdf Size:1372K _international_rectifier

IRF630
IRF630
PD- 95916 IRF630PbF Lead-Free 9/27/04 Document Number: 91031 www.vishay.com 1 IRF630PbF Document Number: 91031 www.vishay.com 2 IRF630PbF Document Number: 91031 www.vishay.com 3 IRF630PbF Document Number: 91031 www.vishay.com 4 IRF630PbF Document Number: 91031 www.vishay.com 5 IRF630PbF Document Number: 91031 www.vishay.com 6 IRF630PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + - + - dv/dt controlled by RG + ISD controlled by Duty Factor "D" - D.U.T. - Device Under Test * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = Period P.W. VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent ISD Ripple ?

1.10. irf630.pdf Size:176K _international_rectifier

IRF630
IRF630

1.11. irf630spbf.pdf Size:981K _international_rectifier

IRF630
IRF630
PD - 95118 IRF630SPbF Lead-Free 3/17/04 Document Number: 91032 www.vishay.com 1 IRF630SPbF Document Number: 91032 www.vishay.com 2 IRF630SPbF Document Number: 91032 www.vishay.com 3 IRF630SPbF Document Number: 91032 www.vishay.com 4 IRF630SPbF Document Number: 91032 www.vishay.com 5 IRF630SPbF Document Number: 91032 www.vishay.com 6 IRF630SPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) I I I I I I I I I I = I OR I I I I = I I = = I Document Number: 91032 www.vishay.com 7 IRF630SPbF D2Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 1.60 (.063) 4.10 (.161) 1.50 (.059) 0.368 (.0145) 3.90 (.153) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 11.60 (.457) 11.40 (.449) 1.65 (.065) 24.30 (.957) 15.42 (.609) 23.90 (.941) 15.22 (.601) TRL 1.75 (.069) 10.90 (.429) 1.25 (.049) 4.72 (.136) 10.7

1.12. irf630a.pdf Size:945K _samsung

IRF630
IRF630
Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.4 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.333 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 200 o Continuous Drain Current (TC=25 C) 9 ID A o C Continuous Drain Current (TC=100 ) 5.7 IDM Drain Current-Pulsed 1 36 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 162 O IAR Avalanche Current 1 9 A O EAR Repetitive Avalanche Energy 1 mJ 7.2 O 3 dv/dt Peak Diode Recovery dv/dt V/ns 5.0 O Total Power Dissipation (TC=25 oC ) 72 W PD Linear Derating Factor W/ o 0.57 C Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8

1.13. irf630s_sihf630s.pdf Size:170K _vishay

IRF630
IRF630
IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition RDS(on) (?)VGS = 10 V 0.40 Surface Mount Qg (Max.) (nC) 43 Available in Tape and Reel Qgs (nC) 7.0 Dynamic dV/dt Rating Qgd (nC) 23 Repetitive Avalanche Rated Configuration Single Fast Switching Ease of Paralleling Simple Drive Requirements D Compliant to RoHS Directive 2002/95/EC D2PAK (TO-263) DESCRIPTION K Third generation Power MOSFETs from Vishay provide the G designer with the best combination of fast switching, ruggedized device design, low on-resistance and S D cost-effectiveness. The D2PAK is a surface mount power package capable of G S accommodating die sizes up to HEX-4. It provides the N-Channel MOSFET highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal co

1.14. irf630_sihf630.pdf Size:575K _vishay

IRF630
IRF630
IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Repetitive Avalanche Rated Available RDS(on) (?)VGS = 10 V 0.40 Fast Switching RoHS* Qg (Max.) (nC) 43 COMPLIANT Ease of Paralleling Qgs (nC) 7.0 Qgd (nC) 23 Simple Drive Requirements Configuration Single Lead (Pb)-free Available D DESCRIPTION TO-220 Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220 package is universally preferred for all S commercial-industrial applications at power dissipation D G levels to approximately 50 W. The low thermal resistance S and low package cost of the TO-220 contribute to its wide N-Channel MOSFET acceptance throughout the industry. ORDERING INFORMATION Package TO-220 IRF630PbF Lead (Pb)-free SiHF630-E3 IRF630 SnPb SiHF630 ABSOLUTE MAXIMUM RATINGS TC = 2

1.15. irf630n.pdf Size:141K _inchange_semiconductor

IRF630
IRF630
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630N DESCRIPTION ·Drain Current –ID=9.3A@ TC=25? ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3?(Max) ·Fast Switching Speed ·Low Drive Requirement APPLICATIONS ·This device is n-channel, enhancement mode, power MOSFET designed especially for high power, high speed applications, such as switching power supplies,UPS, AC and DC motor con- trols, relay and solenoid drivers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25? 9.3 A PD Total Dissipation@TC=25? 82 W Tj Max. Operating Junction Temperature 175 ? Tstg Storage Temperature Range -55~175 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT ?/W Rth j-c Thermal Resistance,Junction to Case 1.83 ?/W Rth

1.16. irf630.pdf Size:114K _inchange_semiconductor

IRF630
IRF630
MOSFET INCHANGE IRF630 N-channel mosfet transistor Features Ў¤ Ў¤ Ў¤ Ў¤ Ў¤ With TO-220 package Low on-state and thermal resistance Fast switching VDSS=200V; RDS(ON)ЎЬ 0.4¦ё ;ID=9A 1.gate 2.drain 3.source 123 Absolute Maximum Ratings Tc=25Ўж SYMBOL VDSS VGS ID PARAMETER Drain-source voltage (VGS=0) Gate-source voltage Drain Current-continuous@ TC=25Ўж Total Dissipation@TC=25Ўж ЎА RATING 200 20 9 UNIT V V A Ptot Tj Tstg SYMBOL TOR NDU TO-220 ICO E SEM ANGTc=25Ўж Electrical Characteristics INCH 74 W Max. Operating Junction temperature Storage temperature 150 Ўж Ўж -65~150 PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS VGS(TH) RDS(ON) IGSS IDSS VSD Drain-source breakdown voltage Gate threshold voltage Drain-source on-stage resistance Gate source leakage current Zero gate voltage drain current Diode forward voltage VGS=0; ID=0.25mA VDS= VGS; ID=1mA VGS=10V; ID=5.4A VGS=ЎА 20V;VDS=0 200 2 4 400 ЎА 100 V V m¦ё

1.17. irf630b.pdf Size:142K _inchange_semiconductor

IRF630
IRF630
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630B DESCRIPTION ·Drain Current –ID= 9A@ TC=25? ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4?(Max) ·Fast Switching Speed APPLICATIONS ·Desinged for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for unin- terrupted power supply and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25? 9 A PD Power Dissipation@TC=25? 72 W Tj Max. Operating Junction Temperature 150 ? Tstg Storage Temperature Range -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT ?/W Rth j-c Thermal Resistance,Junction to Case 1.74 ?/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 isc Website:www.iscsemi.cn INCHANGE Semiconductor isc P

1.18. irf630f.pdf Size:108K _inchange_semiconductor

IRF630
IRF630
MOSFET INCHANGE IRF630F N-channel mosfet transistor Features With TO-220F package Ў¤ Low on-stateand thermal resistance Ў¤ Fast switching Ў¤ VDSS=200V; RDS(ON)ЎЬ 0.4¦ё ;ID=9A Ў¤ 1.gate 2.drain 3.source Ў¤ 123 Absolute Maximum Ratings Tc=25Ўж SYMBOL VDSS VGS ID Ptot Tj PARAMETER Drain-source voltage (VGS=0) Gate-source voltage Drain Current-continuous@ TC=25Ўж Total Dissipation@TC=25Ўж ЎА RATING 200 20 9 35 UNIT V V A W Tstg SYMBOL V(BR)DSS VGS(TH) RDS(ON) IGSS IDSS VSD TOR NDU TO-220F ICO Electrical Characteristics Tc=25Ўж E ES M ANG INCH Operating Junction temperature Storage temperature 150 Ўж Ўж -65~150 PARAMETER CONDITIONS MIN MAX UNIT Drain-source breakdown voltage VGS=0; ID=0.25mA 200 2 V Gate threshold voltage Drain-source on-stage resistance Gate source leakage current Zero gate voltage drain current Diode forward voltage VDS= VGS; ID=1mA VGS=10V; ID=5.4A VGS=ЎА 20V;VDS=0 4 400 ЎА 100 V m

1.19. irf630a.pdf Size:245K _inchange_semiconductor

IRF630
IRF630
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A DESCRIPTION ·Drain Current –ID=9A@ TC=25? ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4?(Max) ·Fast Switching Speed ·Low Drive Requirement APPLICATIONS ·This device is n-channel, enhancement mode, power MOSFET designed especially for high power, high speed applications, such as switching power supplies,UPS, AC and DC motor con- trols, relay and solenoid drivers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25? 9 A Ptot Total Dissipation@TC=25? 72 W Tj Max. Operating Junction Temperature 150 ? Tstg Storage Temperature Range -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT ?/W Rth j-c Thermal Resistance,Junction to Case 1.74 ?/W Rth j-

1.20. hirf630.pdf Size:75K _hsmc

IRF630
IRF630
Spec. No. : MOS200401 HI-SINCERITY Issued Date : 2004.04.01 Revised Date : 2005.04.22 MICROELECTRONICS CORP. Page No. : 1/6 HIRF630 Series Pin Assignment HIRF630 / HIRF630F Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Description Pin 3: Source This power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, conveters, solenoid 3 and relay drivers. 2 1 Features 3-Lead Plastic TO-220FP Package Code: F • Dynamic dv/dt Rating Pin 1: Gate • Repetitive Avalanche Rated Pin 2: Drain • Fast Switching Pin 3: Source • Ease of Paralleling • Simple Drive Requirements 3 2 1 Thermal Characteristics HIRF630 Series Symbol Symbol Parameter Value Units D TO-220AB 1.71 Thermal Resistance R?JC Junction to Case Max. °C/W TO-220FP 3.3 G Thermal Resistance S R?JA Junction to Ambient Max. 62 °C/W Absolute Maximum Ratings Symbol Parameter Value Units

1.21. irf630.pdf Size:94K _a-power

IRF630
IRF630
IRF630 RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Ease of Paralleling D BVDSS 200V Ў Fast Switching Characteristic RDS(ON) 0.4? Ў Simple Drive Requirement ID 9.0A G S Description G TO-220(P) D APEC MOSFET provide the power designer with the best combination of fast S switching , lower on-resistance and reasonable cost. The TO-220 and package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±20 V ID@TC=25? Continuous Drain Current, VGS @ 10V 9.0 A ID@TC=100? Continuous Drain Current, VGS @ 10V 5.7 A IDM Pulsed Drain Current1 36 A PD@TC=25? Total Power Dissipation 74 W Linear Derating Factor 0.59 W/? EAS Single Pulse Avalanche Energy2 40 mJ IAR Avalanche Cu

See also transistors datasheet: IRF6215L , IRF6215S , IRF622 , IRF623 , IRF624 , IRF624A , IRF624S , IRF625 , J112 , IRF630A , IRF630FI , IRF630S , IRF631 , IRF632 , IRF633 , IRF634 , IRF634A .

Keywords

 IRF630 Datasheet  IRF630 Datenblatt  IRF630 RoHS  IRF630 Distributor
 IRF630 Application Notes  IRF630 Component  IRF630 Circuit  IRF630 Schematic
 IRF630 Equivalent  IRF630 Cross Reference  IRF630 Data Sheet  IRF630 Fiche Technique

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