MOSFET Datasheet



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IRF630
  IRF630
  IRF630
  IRF630
 
IRF630
  IRF630
  IRF630
  IRF630
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553L
2SJ553S ..2SK1516
2SK1517 ..2SK2136
2SK2137 ..2SK2735
2SK2735L ..2SK3125
2SK3126 ..2SK357
2SK3582CT ..2SK4195LS
2SK4196LS ..3N159
3N161 ..40821
40822 ..AO4496
AO4498 ..AOC2423
AOC2800 ..AON2701
AON2705 ..AON7752
AON7754 ..AOU4N60
AOU4S60 ..AP13P15GP-HF
AP13P15GS-HF ..AP30T10GP-HF
AP30T10GS-HF ..AP4800AGM-HF
AP4800BGM-HF ..AP9408AGH
AP9408AGI ..AP9930AGM
AP9930GM-HF ..APT1004RGN
APT1004RKN ..APT50M50L2LL
APT50M50PVR ..AUIRF3710ZS
AUIRF3805 ..AUIRLR3915
AUIRLS3034 ..BLF202
BLF2043F ..BSB028N06NN3G
BSB053N03LPG ..BSS123
BSS123A ..BUK653R7-30C
BUK654R0-75C ..BUK9217-75B
BUK9219-55A ..BUZ50A-TO220M
BUZ50ASM ..CED20P10
CED21A2 ..CEP02N7G
CEP02N9 ..CPH3355
CPH3356 ..DMP210DUDJ
DMP210DUFB4 ..FCP9N60N
FCPF11N60 ..FDC642P_F085
FDC645N ..FDM3622
FDM47-06KC5 ..FDMS7608S
FDMS7620S ..FDP8860
FDP8870 ..FDS8926A
FDS8928A ..FQB1P50
FQB22P10 ..FQPF3N25
FQPF3N80C ..FRS240R
FRS244D ..H5N2008P
H5N2301PF ..HAT2080R
HAT2080T ..HUF75332S3S
HUF75333G3 ..IPB022N04LG
IPB023N04NG ..IPD14N06S2-80
IPD15N06S2L-64 ..IPI80N04S3-06
IPI80N04S3-H4 ..IPP90R1K0C3
IPP90R1K2C3 ..IRF2807
IRF2807L ..IRF644
IRF644A ..IRF7450
IRF7451 ..IRF9533
IRF9540 ..IRFH3702
IRFH3707 ..IRFP140
IRFP1405 ..IRFR3411
IRFR3504Z ..IRFS750A
IRFS820 ..IRFW520A
IRFW530A ..IRL8113
IRL8113L ..IRLU3717
IRLU3802 ..IXFH16N120P
IXFH16N50P ..IXFK64N50Q3
IXFK64N60P ..IXFP8N50PM
IXFQ10N80P ..IXFV74N20PS
IXFV96N15P ..IXTA32P20T
IXTA36N30P ..IXTH41N25
IXTH420N04T2 ..IXTP1R4N120P
IXTP1R4N60P ..IXTT16N10D2
IXTT16N20D2 ..JFTJ105
K1109 ..KMB7D0DN40Q
KMB7D0DN40QA ..KU310N10P
KU390N10P ..MTB3D0N03ATH8
MTB40N06E3 ..MTN2510LE3
MTN2510LJ3 ..MTP6405N6
MTP658G6 ..NTD20N03L27
NTD20N06 ..NTR4501
NTR4502P ..PHT6N03LT
PHT6N06LT ..PSMN1R2-30YLC
PSMN1R3-30YL ..RF1S530SM
RF1S540SM ..RJK03E5DPA
RJK03E6DPA ..RQJ0602EGDQS
RQJ0603LGDQA ..SDF08N50
SDF08N60 ..SFP9Z34
SFR2955 ..SMG2306NE
SMG2310A ..SML40J93
SML40L57 ..SPA08N80C3
SPA11N60C3 ..SSDF9504
SSE110N03-03P ..SSM3J16TE
SSM3J304T ..SSM6P05FU
SSM6P09FU ..STB19NF20
STB200N4F3 ..STD3N25-1
STD3N25T4 ..STF26NM60N
STF28NM50N ..STK830P
STK900 ..STP14NK50Z
STP14NK60Z ..STP5N30LFI
STP5N50 ..STS4DNFS30L
STS4DPF20L ..STU616S
STU618S ..TF252TH
TF256 ..TK80S04K3L
TK80S06K3L ..TPCA8046-H
TPCA8047-H ..UP672
UP9971 ..WTC2305
WTC2305DS ..ZXMP10A16K
ZXMP10A17E6 ..ZXMS6006SG
 
IRF630 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF630 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF630

Type of IRF630 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 100

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 10

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF630 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1500

Maximum drain-source on-state resistance (Rds), Ohm: 0.4

Package: TO220

Equivalent transistors for IRF630 - Cross-Reference Search

IRF630 PDF doc:

1.1. irf630_s_1.pdf Size:99K _philips

IRF630
IRF630
Philips Semiconductors Product specification N-channel TrenchMOS? transistor IRF630, IRF630S FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 9 A g RDS(ON) ? 400 m? s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The IRF630 is supplied in the SOT78 (TO220AB) conventional leaded package The IRF630S is supplied in the SOT404 (D2PAK) surface mounting package PINNING SOT78 (TO220AB) SOT404 (D2PAK) PIN DESCRIPTION tab tab 1 gate 2 drain1 3 source 2 tab drain 1 3 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drain-source vo

1.2. irf630s.pdf Size:85K _st

IRF630
IRF630
IRF630S ? N - CHANNEL 200V - 0.35? - 9A- D2PAK MESH OVERLAY? MOSFET TYPE VDSS RDS(on) ID IRF630S 200 V < 0.40 ? 9 A TYPICAL R = 0.35 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED FOR THROUGH-HOLE VERSION CONTACT 3 SALES OFFICE 1 DESCRIPTION D2PAK This power MOSFET is designed using the TO-263 companys consolidated strip layout-based MESH (suffix T4) OVERLAY? process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS INTERNAL SCHEMATIC DIAGRAM HIGH CURRENT SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 200 V VDGR Drain- gate Voltage (RGS = 20 k?) 200 V V Gate-source Voltage 20 V GS o ID Drain Current (continuous) at Tc = 25 C9 A o ID Drain Current (

1.3. irf630.pdf Size:104K _st

IRF630
IRF630
IRF630 IRF630FP ? N - CHANNEL 200V - 0.35? - 9A - TO-220/FP MESH OVERLAY? MOSFET TYPE VDSS RDS(on) ID IRF630 200 V < 0.40 ? 9 A IRF630FP 200 V < 0.40 ? 9 A TYPICAL R = 0.35 ? DS(on) EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION 3 3 2 2 This power MOSFET is designed using he 1 1 companys consolidated strip layout-based MESH OVERLAY process. This technology matches ? TO-220 TO-220FP and improves the performances compared with standard parts from various sources. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF630 IRF630FP VDS Drain-source Voltage (VGS = 0) 200 V VDGR Drain- gate Voltage (RGS = 20 k ) 200 V ? VGS Gate-source Voltage 20 V o ID Drain Current (continuous) at Tc = 25 C 9 9(**) A o ID Drain Current (continuou

1.4. irf630_irf630fp.pdf Size:339K _st

IRF630
IRF630
IRF630 IRF630FP N-channel 200V - 0.35? - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET General features Type VDSS RDS(on) ID IRF630 200V <0.40? 9A IRF630FP 200V <0.40? 9A Extremely high dv/dt capability 3 3 2 2 Very low intrinsic capacitances 1 1 TO-220 TO-220FP Gate charge minimized Description This power MOSFET is designed using the companys consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with Internal schematic diagram standard parts from various sources. Applications Switching application Order codes Part number Marking Package Packaging IRF630 IRF630 TO-220 Tube IRF630FP IRF630FP TO-220FP Tube August 2006 Rev 9 1/14 www.st.com 14 Contents IRF630 - IRF630FP Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

1.5. irf630m.pdf Size:343K _st

IRF630
IRF630
IRF630M IRF630MFP N-CHANNEL 200V - 0.35? - 9A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID IRF630M 200 V < 0.40 ? 9 A IRF630FPM 200 V < 0.40 ? 9 A TYPICAL RDS(on) = 0.35 ? EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES 3 3 GATE CHARGE MINIMIZED 2 2 1 1 TO-220 TO-220FP DESCRIPTION This power MOSFET is designed using the compa- nys consolidated strip layout-based MESH OVER- LAY process. This technology matches and INTERNAL SCHEMATIC DIAGRAM improves the performances compared with standard parts from various sources. Isolated TO-220 option simplifies assembly and cuts risk of accidental short circuit in crowded monitor PCBs. .APPLICATIONS MONITOR DISPLAYS GENERAL PURPOSE SWITCH ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF630M IRF630MFP VDS Drain-source Voltage (VGS = 0) 200 V VDGR Drain-gate Voltage (RGS = 20 k?) 200 V VGS Gate- source Voltage 20 V ID Drain Current (continuos) at TC = 25C 9 9 (**) A ID

1.6. irf630b.pdf Size:859K _fairchild_semi

IRF630
IRF630
IRF630B/IRFS630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC) planar, DMOS technology. Low Crss ( typical 22 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter IRF630B IRFS630B Units VDSS Drain-Source Voltage 200 V ID Drain Current - Continuous (TC = 25

1.7. irf630.pdf Size:177K _fairchild_semi

IRF630
IRF630

1.8. irf630_rf1s630sm.pdf Size:129K _fairchild_semi

IRF630
IRF630
IRF630, RF1S630SM Data Sheet January 2002 9A, 200V, 0.400 Ohm, N-Channel Power Features MOSFETs • 9A, 200V These are N-Channel enhancement mode silicon gate • rDS(ON) = 0.400Ω power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode • SOA is Power Dissipation Limited of operation. All of these power MOSFETs are designed for • Nanosecond Switching Speeds applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high • Linear Transfer Characteristics power bipolar switching transistors requiring high speed and • High Input Impedance low gate drive power. These types can be operated directly • Related Literature from integrated circuits. - TB334 “Guidelines for Soldering Surface Mount Formerly developmental type TA17412. Components

1.9. irf630-6333_irf230-233_mtp12n18-20.pdf Size:177K _fairchild_semi

IRF630
IRF630


1.10. irf630.pdf Size:176K _international_rectifier

IRF630
IRF630

1.11. irf630n.pdf Size:155K _international_rectifier

IRF630
IRF630
PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology HEXFET Power MOSFET Dynamic dv/dt Rating 175C Operating Temperature D VDSS = 200V Fast Switching Fully Avalanche Rated RDS(on) = 0.30? Ease of Paralleling G Simple Drive Requirements Description ID = 9.3A Fifth Generation HEXFET Power MOSFETs from S International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surf

1.12. irf630pbf.pdf Size:1372K _international_rectifier

IRF630
IRF630
PD- 95916 IRF630PbF Lead-Free 9/27/04 Document Number: 91031 www.vishay.com 1 IRF630PbF Document Number: 91031 www.vishay.com 2 IRF630PbF Document Number: 91031 www.vishay.com 3 IRF630PbF Document Number: 91031 www.vishay.com 4 IRF630PbF Document Number: 91031 www.vishay.com 5 IRF630PbF Document Number: 91031 www.vishay.com 6 IRF630PbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + - + - dv/dt controlled by RG + ISD controlled by Duty Factor "D" - D.U.T. - Device Under Test * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = Period P.W. VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent ISD Ripple ?

1.13. irf630spbf.pdf Size:981K _international_rectifier

IRF630
IRF630
PD - 95118 IRF630SPbF Lead-Free 3/17/04 Document Number: 91032 www.vishay.com 1 IRF630SPbF Document Number: 91032 www.vishay.com 2 IRF630SPbF Document Number: 91032 www.vishay.com 3 IRF630SPbF Document Number: 91032 www.vishay.com 4 IRF630SPbF Document Number: 91032 www.vishay.com 5 IRF630SPbF Document Number: 91032 www.vishay.com 6 IRF630SPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) I I I I I I I I I I = I OR I I I I = I I = = I Document Number: 91032 www.vishay.com 7 IRF630SPbF D2Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 1.60 (.063) 4.10 (.161) 1.50 (.059) 0.368 (.0145) 3.90 (.153) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 11.60 (.457) 11.40 (.449) 1.65 (.065) 24.30 (.957) 15.42 (.609) 23.90 (.941) 15.22 (.601) TRL 1.75 (.069) 10.90 (.429) 1.25 (.049) 4.72 (.136) 10.7

1.14. irf630a.pdf Size:945K _samsung

IRF630
IRF630
Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.4 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.333 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 200 o Continuous Drain Current (TC=25 C) 9 ID A o C Continuous Drain Current (TC=100 ) 5.7 IDM Drain Current-Pulsed 1 36 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 162 O IAR Avalanche Current 1 9 A O EAR Repetitive Avalanche Energy 1 mJ 7.2 O 3 dv/dt Peak Diode Recovery dv/dt V/ns 5.0 O Total Power Dissipation (TC=25 oC ) 72 W PD Linear Derating Factor W/ o 0.57 C Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8

1.15. irfp230-233_irf630-633.pdf Size:186K _samsung

IRF630
IRF630


1.16. irf630_sihf630.pdf Size:575K _vishay

IRF630
IRF630
IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Repetitive Avalanche Rated Available RDS(on) (?)VGS = 10 V 0.40 Fast Switching RoHS* Qg (Max.) (nC) 43 COMPLIANT Ease of Paralleling Qgs (nC) 7.0 Qgd (nC) 23 Simple Drive Requirements Configuration Single Lead (Pb)-free Available D DESCRIPTION TO-220 Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220 package is universally preferred for all S commercial-industrial applications at power dissipation D G levels to approximately 50 W. The low thermal resistance S and low package cost of the TO-220 contribute to its wide N-Channel MOSFET acceptance throughout the industry. ORDERING INFORMATION Package TO-220 IRF630PbF Lead (Pb)-free SiHF630-E3 IRF630 SnPb SiHF630 ABSOLUTE MAXIMUM RATINGS TC = 2

1.17. irf630s_sihf630s.pdf Size:170K _vishay

IRF630
IRF630
IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition RDS(on) (?)VGS = 10 V 0.40 Surface Mount Qg (Max.) (nC) 43 Available in Tape and Reel Qgs (nC) 7.0 Dynamic dV/dt Rating Qgd (nC) 23 Repetitive Avalanche Rated Configuration Single Fast Switching Ease of Paralleling Simple Drive Requirements D Compliant to RoHS Directive 2002/95/EC D2PAK (TO-263) DESCRIPTION K Third generation Power MOSFETs from Vishay provide the G designer with the best combination of fast switching, ruggedized device design, low on-resistance and S D cost-effectiveness. The D2PAK is a surface mount power package capable of G S accommodating die sizes up to HEX-4. It provides the N-Channel MOSFET highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal co

1.18. irf630b.pdf Size:142K _inchange_semiconductor

IRF630
IRF630
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630B DESCRIPTION ·Drain Current –ID= 9A@ TC=25? ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4?(Max) ·Fast Switching Speed APPLICATIONS ·Desinged for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for unin- terrupted power supply and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25? 9 A PD Power Dissipation@TC=25? 72 W Tj Max. Operating Junction Temperature 150 ? Tstg Storage Temperature Range -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT ?/W Rth j-c Thermal Resistance,Junction to Case 1.74 ?/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 isc Website:www.iscsemi.cn INCHANGE Semiconductor isc P

1.19. irf630a.pdf Size:245K _inchange_semiconductor

IRF630
IRF630
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A DESCRIPTION ·Drain Current –ID=9A@ TC=25? ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4?(Max) ·Fast Switching Speed ·Low Drive Requirement APPLICATIONS ·This device is n-channel, enhancement mode, power MOSFET designed especially for high power, high speed applications, such as switching power supplies,UPS, AC and DC motor con- trols, relay and solenoid drivers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25? 9 A Ptot Total Dissipation@TC=25? 72 W Tj Max. Operating Junction Temperature 150 ? Tstg Storage Temperature Range -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT ?/W Rth j-c Thermal Resistance,Junction to Case 1.74 ?/W Rth j-

1.20. irf630.pdf Size:114K _inchange_semiconductor

IRF630
IRF630
MOSFET INCHANGE IRF630 N-channel mosfet transistor Features Ў¤ Ў¤ Ў¤ Ў¤ Ў¤ With TO-220 package Low on-state and thermal resistance Fast switching VDSS=200V; RDS(ON)ЎЬ 0.4¦ё ;ID=9A 1.gate 2.drain 3.source 123 Absolute Maximum Ratings Tc=25Ўж SYMBOL VDSS VGS ID PARAMETER Drain-source voltage (VGS=0) Gate-source voltage Drain Current-continuous@ TC=25Ўж Total Dissipation@TC=25Ўж ЎА RATING 200 20 9 UNIT V V A Ptot Tj Tstg SYMBOL TOR NDU TO-220 ICO E SEM ANGTc=25Ўж Electrical Characteristics INCH 74 W Max. Operating Junction temperature Storage temperature 150 Ўж Ўж -65~150 PARAMETER CONDITIONS MIN MAX UNIT V(BR)DSS VGS(TH) RDS(ON) IGSS IDSS VSD Drain-source breakdown voltage Gate threshold voltage Drain-source on-stage resistance Gate source leakage current Zero gate voltage drain current Diode forward voltage VGS=0; ID=0.25mA VDS= VGS; ID=1mA VGS=10V; ID=5.4A VGS=ЎА 20V;VDS=0 200 2 4 400 ЎА 100 V V m¦ё

1.21. irf630n.pdf Size:141K _inchange_semiconductor

IRF630
IRF630
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630N DESCRIPTION ·Drain Current –ID=9.3A@ TC=25? ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3?(Max) ·Fast Switching Speed ·Low Drive Requirement APPLICATIONS ·This device is n-channel, enhancement mode, power MOSFET designed especially for high power, high speed applications, such as switching power supplies,UPS, AC and DC motor con- trols, relay and solenoid drivers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25? 9.3 A PD Total Dissipation@TC=25? 82 W Tj Max. Operating Junction Temperature 175 ? Tstg Storage Temperature Range -55~175 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT ?/W Rth j-c Thermal Resistance,Junction to Case 1.83 ?/W Rth

1.22. irf630f.pdf Size:108K _inchange_semiconductor

IRF630
IRF630
MOSFET INCHANGE IRF630F N-channel mosfet transistor Features With TO-220F package Ў¤ Low on-stateand thermal resistance Ў¤ Fast switching Ў¤ VDSS=200V; RDS(ON)ЎЬ 0.4¦ё ;ID=9A Ў¤ 1.gate 2.drain 3.source Ў¤ 123 Absolute Maximum Ratings Tc=25Ўж SYMBOL VDSS VGS ID Ptot Tj PARAMETER Drain-source voltage (VGS=0) Gate-source voltage Drain Current-continuous@ TC=25Ўж Total Dissipation@TC=25Ўж ЎА RATING 200 20 9 35 UNIT V V A W Tstg SYMBOL V(BR)DSS VGS(TH) RDS(ON) IGSS IDSS VSD TOR NDU TO-220F ICO Electrical Characteristics Tc=25Ўж E ES M ANG INCH Operating Junction temperature Storage temperature 150 Ўж Ўж -65~150 PARAMETER CONDITIONS MIN MAX UNIT Drain-source breakdown voltage VGS=0; ID=0.25mA 200 2 V Gate threshold voltage Drain-source on-stage resistance Gate source leakage current Zero gate voltage drain current Diode forward voltage VDS= VGS; ID=1mA VGS=10V; ID=5.4A VGS=ЎА 20V;VDS=0 4 400 ЎА 100 V m

1.23. hirf630.pdf Size:75K _hsmc

IRF630
IRF630
Spec. No. : MOS200401 HI-SINCERITY Issued Date : 2004.04.01 Revised Date : 2005.04.22 MICROELECTRONICS CORP. Page No. : 1/6 HIRF630 Series Pin Assignment HIRF630 / HIRF630F Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Description Pin 3: Source This power MOSFET is designed for low voltage, high speed power switching applications such as switching regulators, conveters, solenoid 3 and relay drivers. 2 1 Features 3-Lead Plastic TO-220FP Package Code: F • Dynamic dv/dt Rating Pin 1: Gate • Repetitive Avalanche Rated Pin 2: Drain • Fast Switching Pin 3: Source • Ease of Paralleling • Simple Drive Requirements 3 2 1 Thermal Characteristics HIRF630 Series Symbol Symbol Parameter Value Units D TO-220AB 1.71 Thermal Resistance R?JC Junction to Case Max. °C/W TO-220FP 3.3 G Thermal Resistance S R?JA Junction to Ambient Max. 62 °C/W Absolute Maximum Ratings Symbol Parameter Value Units

1.24. irf630.pdf Size:94K _a-power

IRF630
IRF630
IRF630 RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Ease of Paralleling D BVDSS 200V Ў Fast Switching Characteristic RDS(ON) 0.4? Ў Simple Drive Requirement ID 9.0A G S Description G TO-220(P) D APEC MOSFET provide the power designer with the best combination of fast S switching , lower on-resistance and reasonable cost. The TO-220 and package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 200 V VGS Gate-Source Voltage ±20 V ID@TC=25? Continuous Drain Current, VGS @ 10V 9.0 A ID@TC=100? Continuous Drain Current, VGS @ 10V 5.7 A IDM Pulsed Drain Current1 36 A PD@TC=25? Total Power Dissipation 74 W Linear Derating Factor 0.59 W/? EAS Single Pulse Avalanche Energy2 40 mJ IAR Avalanche Cu

See also transistors datasheet: IRF6215L , IRF6215S , IRF622 , IRF623 , IRF624 , IRF624A , IRF624S , IRF625 , J112 , IRF630A , IRF630FI , IRF630S , IRF631 , IRF632 , IRF633 , IRF634 , IRF634A .

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 IRF630 Datasheet  IRF630 Datenblatt  IRF630 RoHS  IRF630 Distributor
 IRF630 Application Notes  IRF630 Component  IRF630 Circuit  IRF630 Schematic
 IRF630 Equivalent  IRF630 Cross Reference  IRF630 Data Sheet  IRF630 Fiche Technique

 

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