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IRF630S MOSFET (IC) Datasheet. Cross Reference Search. IRF630S Equivalent

Type Designator: IRF630S

Type of IRF630S transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 74

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 9

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF630S transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.4

Package: D2PAK

IRF630S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF630S PDF doc:

1.1. irf630s.pdf Size:85K _st

IRF630S
IRF630S

IRF630S ? N - CHANNEL 200V - 0.35? - 9A- D2PAK MESH OVERLAY? MOSFET TYPE VDSS RDS(on) ID IRF630S 200 V < 0.40 ? 9 A TYPICAL R = 0.35 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED FOR THROUGH-HOLE VERSION CONTACT 3 SALES OFFICE 1 DESCRIPTION D2PAK This power MOSFET is designed using the TO-263 company’

1.2. irf630spbf.pdf Size:981K _international_rectifier

IRF630S
IRF630S

PD - 95118 IRF630SPbF • Lead-Free 3/17/04 Document Number: 91032 www.vishay.com 1 IRF630SPbF Document Number: 91032 www.vishay.com 2 IRF630SPbF Document Number: 91032 www.vishay.com 3 IRF630SPbF Document Number: 91032 www.vishay.com 4 IRF630SPbF Document Number: 91032 www.vishay.com 5 IRF630SPbF Document Number: 91032 www.vishay.com 6 IRF630SPbF D2Pak Package Outline D

1.3. irf630s_sihf630s.pdf Size:170K _vishay

IRF630S
IRF630S

IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition RDS(on) (?)VGS = 10 V 0.40 • Surface Mount Qg (Max.) (nC) 43 • Available in Tape and Reel Qgs (nC) 7.0 • Dynamic dV/dt Rating Qgd (nC) 23 • Repetitive Avalanche Rated Configuration Single • Fast Switching • Ease of Paralleling • Simple Drive

1.4. irf630s.pdf Size:1779K _kexin

IRF630S
IRF630S

SMD Type MOSFET N-Channel MOSFET IRF630S (KRF630S) ■ Features ● VDS (V) = 200V ● ID = 9 A (VGS = 10V) ● RDS(ON) < 400mΩ (VGS = 10V) ● Fast switching ● Low thermal resistance d g s ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 200 V Drain-Gate Voltage VDG 200 Gate-Source Voltage VGS ±20 Ta = 25℃ 9 Cont

See also transistors datasheet: IRF623 , IRF624 , IRF624A , IRF624S , IRF625 , IRF630 , IRF630A , IRF630FI , 2SK170 , IRF631 , IRF632 , IRF633 , IRF634 , IRF634A , IRF634S , IRF635 , IRF636A .

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