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IRF634S MOSFET (IC) Datasheet. Cross Reference Search. IRF634S Equivalent

Type Designator: IRF634S

Type of IRF634S transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 74

Maximum drain-source voltage |Uds|, V: 250

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 8.1

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF634S transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.45

Package: D2PAK

IRF634S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF634S PDF doc:

1.1. irf634s.pdf Size:324K _international_rectifier

IRF634S
IRF634S

PD - 95541 IRF634SPbF Lead-Free SMD-220 7/21/04 Document Number: 91035 www.vishay.com 1 IRF634SPbF Document Number: 91035 www.vishay.com 2 IRF634SPbF Document Number: 91035 www.vishay.com 3 IRF634SPbF Document Number: 91035 www.vishay.com 4 IRF634SPbF Document Number: 91035 www.vishay.com 5 IRF634SPbF Document Number: 91035 www.vishay.com 6 IRF634SPbF Peak Diode Reco

1.2. irf634s_sihf634s.pdf Size:168K _vishay

IRF634S
IRF634S

IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 Surface Mount RDS(on) (?)VGS = 10 V 0.45 Available in Tape and Reel Qg (Max.) (nC) 41 Dynamic dV/dt Rating Qgs (nC) 6.5 Repetitive Avalanche Rated Qgd (nC) 22 Fast Switching Ease of Paralleling Configuration Single Simple Drive

4.1. irf634b_irfs634b.pdf Size:859K _fairchild_semi

IRF634S
IRF634S

November 2001 IRF634B/IRFS634B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.1A, 250V, RDS(on) = 0.45? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC) planar, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially tailored to Fast switchi

4.2. irf634b.pdf Size:643K _fairchild_semi

IRF634S
IRF634S

December 2013 IRF634B N-Channel BFET MOSFET 250 V, 8.1 A, 450 mΩ Description Features These N-Channel enhancement mode power field effect • 8.1 A, 250 V, RDS(on) = 450 mΩ @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low Gate Charge (Typ. 29 nC) planar, DMOS technology. This advanced technology has • Low Crss (Typ. 20 pF) been especially tailored to

4.3. irf634.pdf Size:171K _international_rectifier

IRF634S
IRF634S

4.4. irf634n-s-lpbf.pdf Size:244K _international_rectifier

IRF634S
IRF634S

PD - 95342 IRF634NPbF IRF634NSPbF l Advanced Process Technology IRF634NLPbF l Dynamic dv/dt Rating HEXFET Power MOSFET l 175C Operating Temperature l Fast Switching D l Fully Avalanche Rated VDSS = 250V l Ease of Paralleling l Simple Drive Requirements RDS(on) = 0.435? G l Lead-Free Description ID = 8.0A Fifth Generation HEXFET Power MOSFETs from International S Rectifier ut

4.5. irf634pbf.pdf Size:2141K _international_rectifier

IRF634S
IRF634S

PD - 94975 IRF634PbF Lead-Free 02/03/04 Document Number: 91034 www.vishay.com 1 IRF634PbF Document Number: 91034 www.vishay.com 2 IRF634PbF Document Number: 91034 www.vishay.com 3 IRF634PbF Document Number: 91034 www.vishay.com 4 IRF634PbF Document Number: 91034 www.vishay.com 5 IRF634PbF Document Number: 91034 www.vishay.com 6 IRF634PbF TO-220AB Package Outline Dime

4.6. irf634n.pdf Size:301K _international_rectifier

IRF634S
IRF634S

PD - 94310 IRF634N IRF634NS IRF634NL Advanced Process Technology Dynamic dv/dt Rating HEXFET Power MOSFET 175C Operating Temperature D Fast Switching VDSS = 250V Fully Avalanche Rated Ease of Paralleling RDS(on) = 0.435? Simple Drive Requirements G Description Fifth Generation HEXFET Power MOSFETs from International ID = 8.0A Rectifier utilize advanced processing techni

4.7. irf634a.pdf Size:790K _samsung

IRF634S
IRF634S

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.45 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Lower RDS(ON) : 0.327 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Uni

4.8. irf634n_irf634nl_irf634ns_sihf634n_sihf634nl_sihf634ns.pdf Size:158K _vishay

IRF634S
IRF634S

IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 Dynamic dV/dt Rating Available RDS(on) (?)VGS = 10 V 0.435 175 C Operating Temperature RoHS* Fast Switching COMPLIANT Qg (Max.) (nC) 34 Fully Avalanche Rated Qgs (nC) 6.5 Ease of Paralleling Qgd (nC) 16 Simple Dr

4.9. irf634_sihf634.pdf Size:201K _vishay

IRF634S
IRF634S

IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.45 RoHS* Fast Switching Qg (Max.) (nC) 41 COMPLIANT Ease of Paralleling Qgs (nC) 6.5 Qgd (nC) 22 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-22

4.10. irf634-35-36-37.pdf Size:199K _no

IRF634S
IRF634S



4.11. irf634.pdf Size:114K _inchange_semiconductor

IRF634S
IRF634S

MOSFET INCHANGE IRF634 N-channel mosfet transistor Features Ў¤ Ў¤ Ў¤ Ў¤ Ў¤ With TO-220 package Simple drive requirements Fast switching VDSS=250V; RDS(ON)ЎЬ 0.45¦ё ;ID=8.1A 1.gate 2.drain 3.source 123 Absolute Maximum Ratings Tc=25Ўж SYMBOL VDSS VGS ID PARAMETER Drain-source voltage (VGS=0) Gate-source voltage Drain Current-continuous@ TC=25Ўж Total Dissipation@

See also transistors datasheet: IRF630A , IRF630FI , IRF630S , IRF631 , IRF632 , IRF633 , IRF634 , IRF634A , IRF9530 , IRF635 , IRF636A , IRF640 , IRF640A , IRF640FI , IRF640L , IRF640S , IRF641 .

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