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IRF635 MOSFET (IC) Datasheet. Cross Reference Search. IRF635 Equivalent

Type Designator: IRF635

Type of IRF635 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 75

Maximum drain-source voltage |Uds|, V: 250

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 6.5

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF635 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.68

Package: TO220

IRF635 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF635 PDF doc:

5.1. irf630_s_1.pdf Size:99K _philips

IRF635
IRF635

Philips Semiconductors Product specification N-channel TrenchMOS? transistor IRF630, IRF630S FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 9 A g RDS(ON) ? 400 m? s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in

5.2. irf630.pdf Size:104K _st

IRF635
IRF635

IRF630 IRF630FP ? N - CHANNEL 200V - 0.35? - 9A - TO-220/FP MESH OVERLAY? MOSFET TYPE VDSS RDS(on) ID IRF630 200 V < 0.40 ? 9 A IRF630FP 200 V < 0.40 ? 9 A TYPICAL R = 0.35 ? DS(on) EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION 3 3 2 2 This power MOSFET is designed using he 1 1 companys consolidated strip layout-based MESH

5.3. irf630s.pdf Size:85K _st

IRF635
IRF635

IRF630S ? N - CHANNEL 200V - 0.35? - 9A- D2PAK MESH OVERLAY? MOSFET TYPE VDSS RDS(on) ID IRF630S 200 V < 0.40 ? 9 A TYPICAL R = 0.35 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED FOR THROUGH-HOLE VERSION CONTACT 3 SALES OFFICE 1 DESCRIPTION D2PAK This power MOSFET is designed using the TO-263 company

5.4. irf630m.pdf Size:343K _st

IRF635
IRF635

IRF630M IRF630MFP N-CHANNEL 200V - 0.35? - 9A TO-220/TO-220FP MESH OVERLAY MOSFET TYPE VDSS RDS(on) ID IRF630M 200 V < 0.40 ? 9 A IRF630FPM 200 V < 0.40 ? 9 A TYPICAL RDS(on) = 0.35 ? EXTREMELY HIGH dv/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES 3 3 GATE CHARGE MINIMIZED 2 2 1 1 TO-220 TO-220FP DESCRIPTION This power MOSFET is designed using the compa- nys consolidated stri

5.5. irf630_irf630fp.pdf Size:339K _st

IRF635
IRF635

IRF630 IRF630FP N-channel 200V - 0.35? - 9A TO-220/TO-220FP Mesh overlay II Power MOSFET General features Type VDSS RDS(on) ID IRF630 200V <0.40? 9A IRF630FP 200V <0.40? 9A Extremely high dv/dt capability 3 3 2 2 Very low intrinsic capacitances 1 1 TO-220 TO-220FP Gate charge minimized Description This power MOSFET is designed using the companys consolidated strip layout-b

5.6. irf630.pdf Size:177K _fairchild_semi

IRF635
IRF635

5.7. irf630b.pdf Size:859K _fairchild_semi

IRF635
IRF635

IRF630B/IRFS630B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.0A, 200V, RDS(on) = 0.4? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 22 nC) planar, DMOS technology. Low Crss ( typical 22 pF) This advanced technology has been especially tailored to Fast switching minimize on-

5.8. irf634b_irfs634b.pdf Size:859K _fairchild_semi

IRF635
IRF635

November 2001 IRF634B/IRFS634B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 8.1A, 250V, RDS(on) = 0.45? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 29 nC) planar, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially tailored to Fast switchi

5.9. irf630-6333_irf230-233_mtp12n18-20.pdf Size:177K _fairchild_semi

IRF635
IRF635



5.10. irf630_rf1s630sm.pdf Size:129K _fairchild_semi

IRF635
IRF635

IRF630, RF1S630SM Data Sheet January 2002 9A, 200V, 0.400 Ohm, N-Channel Power Features MOSFETs • 9A, 200V These are N-Channel enhancement mode silicon gate • rDS(ON) = 0.400Ω power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanc

5.11. irf634b.pdf Size:643K _fairchild_semi

IRF635
IRF635

December 2013 IRF634B N-Channel BFET MOSFET 250 V, 8.1 A, 450 mΩ Description Features These N-Channel enhancement mode power field effect • 8.1 A, 250 V, RDS(on) = 450 mΩ @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low Gate Charge (Typ. 29 nC) planar, DMOS technology. This advanced technology has • Low Crss (Typ. 20 pF) been especially tailored to

5.12. irf630pbf.pdf Size:1372K _international_rectifier

IRF635
IRF635

PD- 95916 IRF630PbF Lead-Free 9/27/04 Document Number: 91031 www.vishay.com 1 IRF630PbF Document Number: 91031 www.vishay.com 2 IRF630PbF Document Number: 91031 www.vishay.com 3 IRF630PbF Document Number: 91031 www.vishay.com 4 IRF630PbF Document Number: 91031 www.vishay.com 5 IRF630PbF Document Number: 91031 www.vishay.com 6 IRF630PbF Peak Diode Recovery dv/dt Test C

5.13. irf630.pdf Size:176K _international_rectifier

IRF635
IRF635

5.14. irf634.pdf Size:171K _international_rectifier

IRF635
IRF635

5.15. irf630spbf.pdf Size:981K _international_rectifier

IRF635
IRF635

PD - 95118 IRF630SPbF Lead-Free 3/17/04 Document Number: 91032 www.vishay.com 1 IRF630SPbF Document Number: 91032 www.vishay.com 2 IRF630SPbF Document Number: 91032 www.vishay.com 3 IRF630SPbF Document Number: 91032 www.vishay.com 4 IRF630SPbF Document Number: 91032 www.vishay.com 5 IRF630SPbF Document Number: 91032 www.vishay.com 6 IRF630SPbF D2Pak Package Outline D

5.16. irf634n-s-lpbf.pdf Size:244K _international_rectifier

IRF635
IRF635

PD - 95342 IRF634NPbF IRF634NSPbF l Advanced Process Technology IRF634NLPbF l Dynamic dv/dt Rating HEXFET Power MOSFET l 175C Operating Temperature l Fast Switching D l Fully Avalanche Rated VDSS = 250V l Ease of Paralleling l Simple Drive Requirements RDS(on) = 0.435? G l Lead-Free Description ID = 8.0A Fifth Generation HEXFET Power MOSFETs from International S Rectifier ut

5.17. irf634pbf.pdf Size:2141K _international_rectifier

IRF635
IRF635

PD - 94975 IRF634PbF Lead-Free 02/03/04 Document Number: 91034 www.vishay.com 1 IRF634PbF Document Number: 91034 www.vishay.com 2 IRF634PbF Document Number: 91034 www.vishay.com 3 IRF634PbF Document Number: 91034 www.vishay.com 4 IRF634PbF Document Number: 91034 www.vishay.com 5 IRF634PbF Document Number: 91034 www.vishay.com 6 IRF634PbF TO-220AB Package Outline Dime

5.18. irf634n.pdf Size:301K _international_rectifier

IRF635
IRF635

PD - 94310 IRF634N IRF634NS IRF634NL Advanced Process Technology Dynamic dv/dt Rating HEXFET Power MOSFET 175C Operating Temperature D Fast Switching VDSS = 250V Fully Avalanche Rated Ease of Paralleling RDS(on) = 0.435? Simple Drive Requirements G Description Fifth Generation HEXFET Power MOSFETs from International ID = 8.0A Rectifier utilize advanced processing techni

5.19. irf634s.pdf Size:324K _international_rectifier

IRF635
IRF635

PD - 95541 IRF634SPbF Lead-Free SMD-220 7/21/04 Document Number: 91035 www.vishay.com 1 IRF634SPbF Document Number: 91035 www.vishay.com 2 IRF634SPbF Document Number: 91035 www.vishay.com 3 IRF634SPbF Document Number: 91035 www.vishay.com 4 IRF634SPbF Document Number: 91035 www.vishay.com 5 IRF634SPbF Document Number: 91035 www.vishay.com 6 IRF634SPbF Peak Diode Reco

5.20. irf630n.pdf Size:155K _international_rectifier

IRF635
IRF635

PD - 94005A IRF630N IRF630NS IRF630NL Advanced Process Technology HEXFET Power MOSFET Dynamic dv/dt Rating 175C Operating Temperature D VDSS = 200V Fast Switching Fully Avalanche Rated RDS(on) = 0.30? Ease of Paralleling G Simple Drive Requirements Description ID = 9.3A Fifth Generation HEXFET Power MOSFETs from S International Rectifier utilize advanced processing te

5.21. irfp230-233_irf630-633.pdf Size:186K _samsung

IRF635
IRF635



5.22. irf636a.pdf Size:527K _samsung

IRF635
IRF635

Advanced Power MOSFET FEATURES BVDSS = 275 V Avalanche Rugged Technology RDS(on) = 0.50 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.1 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 10 A (Max.) @ VDS = 275V Lower RDS(ON) : 0.380 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value U

5.23. irf636.pdf Size:557K _samsung

IRF635
IRF635

Advanced Power MOSFET FEATURES BVDSS = 275 V Avalanche Rugged Technology RDS(on) = 0.50 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.1 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 10 A (Max.) @ VDS = 275V Lower RDS(ON) : 0.380 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value U

5.24. irf634a.pdf Size:790K _samsung

IRF635
IRF635

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.45 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Lower RDS(ON) : 0.327 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Uni

5.25. irf630a.pdf Size:945K _samsung

IRF635
IRF635

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.4 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.333 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V

5.26. irf634s_sihf634s.pdf Size:168K _vishay

IRF635
IRF635

IRF634S, SiHF634S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 Surface Mount RDS(on) (?)VGS = 10 V 0.45 Available in Tape and Reel Qg (Max.) (nC) 41 Dynamic dV/dt Rating Qgs (nC) 6.5 Repetitive Avalanche Rated Qgd (nC) 22 Fast Switching Ease of Paralleling Configuration Single Simple Drive

5.27. irf630s_sihf630s.pdf Size:170K _vishay

IRF635
IRF635

IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 200 Definition RDS(on) (?)VGS = 10 V 0.40 Surface Mount Qg (Max.) (nC) 43 Available in Tape and Reel Qgs (nC) 7.0 Dynamic dV/dt Rating Qgd (nC) 23 Repetitive Avalanche Rated Configuration Single Fast Switching Ease of Paralleling Simple Drive

5.28. irf630_sihf630.pdf Size:575K _vishay

IRF635
IRF635

IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Repetitive Avalanche Rated Available RDS(on) (?)VGS = 10 V 0.40 Fast Switching RoHS* Qg (Max.) (nC) 43 COMPLIANT Ease of Paralleling Qgs (nC) 7.0 Qgd (nC) 23 Simple Drive Requirements Configuration Single Lead (Pb)-free Available D DESCRIPTION TO-220 Third gener

5.29. irf634n_irf634nl_irf634ns_sihf634n_sihf634nl_sihf634ns.pdf Size:158K _vishay

IRF635
IRF635

IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Advanced Process Technology VDS (V) 250 Dynamic dV/dt Rating Available RDS(on) (?)VGS = 10 V 0.435 175 C Operating Temperature RoHS* Fast Switching COMPLIANT Qg (Max.) (nC) 34 Fully Avalanche Rated Qgs (nC) 6.5 Ease of Paralleling Qgd (nC) 16 Simple Dr

5.30. irf634_sihf634.pdf Size:201K _vishay

IRF635
IRF635

IRF634, SiHF634 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.45 RoHS* Fast Switching Qg (Max.) (nC) 41 COMPLIANT Ease of Paralleling Qgs (nC) 6.5 Qgd (nC) 22 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-22

5.31. irf630b.pdf Size:67K _no

IRF635
IRF635



5.32. irf634-35-36-37.pdf Size:199K _no

IRF635
IRF635



5.33. irf630f.pdf Size:108K _inchange_semiconductor

IRF635
IRF635

MOSFET INCHANGE IRF630F N-channel mosfet transistor Features With TO-220F package Ў¤ Low on-stateand thermal resistance Ў¤ Fast switching Ў¤ VDSS=200V; RDS(ON)ЎЬ 0.4¦ё ;ID=9A Ў¤ 1.gate 2.drain 3.source Ў¤ 123 Absolute Maximum Ratings Tc=25Ўж SYMBOL VDSS VGS ID Ptot Tj PARAMETER Drain-source voltage (VGS=0) Gate-source voltage Drain Current-continuous@ TC=25Ўж Total

5.34. irf630.pdf Size:114K _inchange_semiconductor

IRF635
IRF635

MOSFET INCHANGE IRF630 N-channel mosfet transistor Features Ў¤ Ў¤ Ў¤ Ў¤ Ў¤ With TO-220 package Low on-state and thermal resistance Fast switching VDSS=200V; RDS(ON)ЎЬ 0.4¦ё ;ID=9A 1.gate 2.drain 3.source 123 Absolute Maximum Ratings Tc=25Ўж SYMBOL VDSS VGS ID PARAMETER Drain-source voltage (VGS=0) Gate-source voltage Drain Current-continuous@ TC=25Ўж Total Dissi

5.35. irf630b.pdf Size:142K _inchange_semiconductor

IRF635
IRF635

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630B DESCRIPTION ·Drain Current –ID= 9A@ TC=25? ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4?(Max) ·Fast Switching Speed APPLICATIONS ·Desinged for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters

5.36. irf634.pdf Size:114K _inchange_semiconductor

IRF635
IRF635

MOSFET INCHANGE IRF634 N-channel mosfet transistor Features Ў¤ Ў¤ Ў¤ Ў¤ Ў¤ With TO-220 package Simple drive requirements Fast switching VDSS=250V; RDS(ON)ЎЬ 0.45¦ё ;ID=8.1A 1.gate 2.drain 3.source 123 Absolute Maximum Ratings Tc=25Ўж SYMBOL VDSS VGS ID PARAMETER Drain-source voltage (VGS=0) Gate-source voltage Drain Current-continuous@ TC=25Ўж Total Dissipation@

5.37. irf630n.pdf Size:141K _inchange_semiconductor

IRF635
IRF635

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630N DESCRIPTION ·Drain Current –ID=9.3A@ TC=25? ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3?(Max) ·Fast Switching Speed ·Low Drive Requirement APPLICATIONS ·This device is n-channel, enhancement mode, power MOSFET designed especiall

5.38. irf630a.pdf Size:245K _inchange_semiconductor

IRF635
IRF635

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF630A DESCRIPTION ·Drain Current –ID=9A@ TC=25? ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4?(Max) ·Fast Switching Speed ·Low Drive Requirement APPLICATIONS ·This device is n-channel, enhancement mode, power MOSFET designed especially

5.39. hirf630.pdf Size:75K _hsmc

IRF635
IRF635

Spec. No. : MOS200401 HI-SINCERITY Issued Date : 2004.04.01 Revised Date : 2005.04.22 MICROELECTRONICS CORP. Page No. : 1/6 HIRF630 Series Pin Assignment HIRF630 / HIRF630F Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Description Pin 3: Source This power MOSFET is designed for low voltage, high speed power switching applications

5.40. irf630.pdf Size:94K _a-power

IRF635
IRF635

IRF630 RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Ease of Paralleling D BVDSS 200V Ў Fast Switching Characteristic RDS(ON) 0.4? Ў Simple Drive Requirement ID 9.0A G S Description G TO-220(P) D APEC MOSFET provide the power designer with the best combination of fast S switching , lower on-resistance and reasonable cost. The T

5.41. irf630s.pdf Size:1779K _kexin

IRF635
IRF635

SMD Type MOSFET N-Channel MOSFET IRF630S (KRF630S) ■ Features ● VDS (V) = 200V ● ID = 9 A (VGS = 10V) ● RDS(ON) < 400mΩ (VGS = 10V) ● Fast switching ● Low thermal resistance d g s ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 200 V Drain-Gate Voltage VDG 200 Gate-Source Voltage VGS ±20 Ta = 25℃ 9 Cont

See also transistors datasheet: IRF630FI , IRF630S , IRF631 , IRF632 , IRF633 , IRF634 , IRF634A , IRF634S , IRFP250N , IRF636A , IRF640 , IRF640A , IRF640FI , IRF640L , IRF640S , IRF641 , IRF642 .

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