MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF640
  IRF640
  IRF640
 
IRF640
  IRF640
  IRF640
 
IRF640
  IRF640
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123N3
BSS123W ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FDB150N10
FDB15N50 ..FDD8778
FDD8780 ..FDMS8460
FDMS86101 ..FDS4435BZ
FDS4435BZ_F085 ..FK20VS-5
FK20VS-6 ..FQP16N25
FQP17N40 ..FRE460H
FRE460R ..FSL430D
FSL430R ..H7N0312LD
H7N0312LM ..HAT2187WP
HAT2188WP ..HUF76132P3
HUF76132S3S ..IPB120N06S4-H1
IPB123N10N3G ..IPD60R600CP
IPD60R600E6 ..IPP076N12N3G
IPP080N03LG ..IRC150
IRC220 ..IRF3711ZS
IRF3717 ..IRF6725M
IRF6726M ..IRF7755G
IRF7756G ..IRFB3207Z
IRFB3207ZG ..IRFI4410ZG
IRFI460 ..IRFP352
IRFP353 ..IRFS231
IRFS232 ..IRFSL3806
IRFSL38N20D ..IRFZ34NS
IRFZ35 ..IRLM014A
IRLM110A ..IXBH20N160
IXBH40N140 ..IXFH58N20Q
IXFH5N100P ..IXFN102N30P
IXFN106N20 ..IXFR64N50Q3
IXFR64N60P ..IXFX52N60Q2
IXFX55N50 ..IXTC36P15P
IXTC62N15P ..IXTK150N15P
IXTK160N20 ..IXTP60N28TM-A
IXTP62N15P ..IXTV22N60PS
IXTV230N085T ..KF70N06P
KF7N50D ..KP731V
KP737A ..MMBF4391L
MMBF4392 ..MTD6N15
MTD6N20E ..MTN5N60I3
MTN5N60J3 ..NDD04N60Z
NDD05N50Z ..NTGD3148N
NTGD4161P ..OM5N100SA
OM6N100SA ..PML260SN
PML340SN ..PSMN7R0-100XS
PSMN7R0-30YL ..RFL1N10L
RFP10P03L ..RJK2006DPF
RJK2006DPJ ..RSQ045N03
RSR010N10 ..SDF350
SDF360JEA ..SGM0410S
SGM2305A ..SMK0825F
SMK0825FC ..SML6040HN
SML6045AN ..SPD30N03S2L-10G
SPD30N03S2L-20G ..SSG4801
SSG4825P ..SSM3K17FU
SSM3K301T ..SSP7N80A
SSP80N06A ..STB7N52K3
STB7NK80Z ..STD6NF10
STD6NK50Z ..STH14N50
STH14N50FI ..STM4605
STM4615 ..STP24NM60N
STP24NM65N ..STP7N20
STP7N20FI ..STT4660
STT468A ..STW14NK50Z
STW15N50 ..TK15H50C
TK15J50D ..TPC8039-H
TPC8040-H ..TPCF8004
TPCF8101 ..UT6401
UT6402 ..ZVNL120A
ZVNL120G ..ZXMS6006SG
 
IRF640 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF640 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF640

Type of IRF640 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 125

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 18

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF640 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 2100

Maximum drain-source on-state resistance (Rds), Ohm: 0.18

Package: TO220

Equivalent transistors for IRF640

IRF640 PDF doc:

1.1. irf640.rev1.pdf Size:109K _motorola

IRF640
IRF640
ClibPDF - www.fastio.com ClibPDF - www.fastio.com ClibPDF - www.fastio.com

1.2. irf640_s_1.pdf Size:97K _philips

IRF640
IRF640
Philips Semiconductors Product specification N-channel TrenchMOS? transistor IRF640, IRF640S FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Low on-state resistance VDSS = 200 V • Fast switching • Low thermal resistance ID = 16 A g RDS(ON) ? 180 m? s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The IRF640 is supplied in the SOT78 (TO220AB) conventional leaded package. The IRF640S is supplied in the SOT404 (D2PAK) surface mounting package. PINNING SOT78 (TO220AB) SOT404 (D2PAK) PIN DESCRIPTION tab tab 1 gate 2 drain1 3 source 2 tab drain 1 3 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drain-source

1.3. irf640_irf640fp.pdf Size:332K _st

IRF640
IRF640
IRF640 IRF640FP N-channel 200V - 0.15? - 18A TO-220/TO-220FP Mesh overlay™ Power MOSFET General features Type VDSS RDS(on) ID IRF640 200V <0.18? 18A IRF640FP 200V <0.18? 18A ¦ Extremely high dv/dt capability 3 3 2 2 ¦ Very low intrinsic capacitances 1 1 TO-220 TO-220FP ¦ Gate charge minimized Description This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with Internal schematic diagram standard parts from various sources. Applications ¦ Switching application Order codes Part number Marking Package Packaging IRF640 IRF640 TO-220 Tube IRF640FP IRF640FP TO-220FP Tube September 2006 Rev 9 1/14 www.st.com 14 Obsolete Product(s) - Obsolete Product(s) Contents IRF640 - IRF640FP Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . .

1.4. irf640f_fp.pdf Size:107K _st

IRF640
IRF640
IRF640 IRF640FP ? N - CHANNEL 200V - 0.150? - 18A TO-220/TO-220FP MESH OVERLAY? MOSFET TYPE VDSS RDS(on) ID IRF640 200 V < 0.18 ? 18 A IRF640FP 200 V < 0.18 18 A ? TYPICAL RDS(on) = 0.150 ? EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION 3 3 2 2 This power MOSFET is designed using he 1 1 company’s consolidated strip layout-based MESH OVERLAY process. This technology matches ? TO-220 TO-220FP and improves the performances compared with standard parts from various sources. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF640 IRF640FP V Drain-source Voltage (V = 0) 200 V DS GS VDGR 200 V Drain- gate Voltage (RGS = 20 k ) ? VGS Gate-source Voltage ± 20 V o ID Drain Current (continuous) at Tc = 25 C 18 18(**) A o ID Drain Curr

1.5. irf640.pdf Size:57K _st

IRF640
IRF640
IRF640 IRF640FP ? N - CHANNEL 200V - 0.150? - 18A - TO-220/FP MESH OVERLAY? MOSFET TYPE VDSS RDS(on) ID IRF640 200 V < 0.18 ? 18 A IRF640FP 200 V < 0.18 ? 18 A TYPICAL R = 0.150 ? DS(on) EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION 3 3 2 2 This power MOSFET is designed using he 1 1 company’s consolidated strip layout-based MESH OVERLAY process. This technology matches ? TO-220 TO-220FP and improves the performances compared with standard parts from various sources. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF640 IRF640FP VDS Drain-source Voltage (VGS = 0) 200 V VDGR Drain- gate Voltage (RGS = 20 k ) 200 V ? VGS Gate-source Voltage ± 20 V o ID Drain Current (continuous) at Tc = 25 C 18 18(**) A o ID Drain Current (co

1.6. irf640b_irfs640b.pdf Size:916K _fairchild_semi

IRF640
IRF640
November 2001 IRF640B/IRFS640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 18A, 200V, RDS(on) = 0.18? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 45 nC) planar, DMOS technology. • Low Crss ( typical 45 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter IRF640B IRFS640B Units VDSS Drain-Source Voltage 200 V ID Drain Current - Cont

1.7. irf640_rf1s640_rf1s640sm.pdf Size:128K _fairchild_semi

IRF640
IRF640
IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power Features MOSFETs • 18A, 200V These are N-Channel enhancement mode silicon gate • rDS(ON) = 0.180Ω power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode • SOA is Power Dissipation Limited of operation. All of these power MOSFETs are designed for • Nanosecond Switching Speed applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high • Linear Transfer Characteristics power bipolar switching transistors requiring high speed and • High Input Impedance low gate drive power. These types can be operated directly • Related Literature from integrated circuits. - TB334 “Guidelines for Soldering Surface Mount Formerly developmental type TA17422. C

1.8. irf640n.pdf Size:155K _international_rectifier

IRF640
IRF640
PD - 94006 IRF640N IRF640NS IRF640NL Advanced Process Technology HEXFET® Power MOSFET Dynamic dv/dt Rating D 175°C Operating Temperature VDSS = 200V Fast Switching Fully Avalanche Rated RDS(on) = 0.15? Ease of Paralleling G Simple Drive Requirements Description ID = 18A Fifth Generation HEXFET® Power MOSFETs from S International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surfac

1.9. irf640pbf.pdf Size:2211K _international_rectifier

IRF640
IRF640
PD - 94930 IRF640PbF • Lead-Free 1/8/04 Document Number: 91036 www.vishay.com 1 IRF640PbF Document Number: 91036 www.vishay.com 2 IRF640PbF Document Number: 91036 www.vishay.com 3 IRF640PbF Document Number: 91036 www.vishay.com 4 IRF640PbF Document Number: 91036 www.vishay.com 5 IRF640PbF Document Number: 91036 www.vishay.com 6 IRF640PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045) 0.

1.10. irf640s.pdf Size:228K _international_rectifier

IRF640
IRF640
PD -90902B IRF640S/L HEXFET® Power MOSFET Surface Mount (IRF640S) D Low-profile through-hole (IRF640L) VDSS = 200V Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating RDS(on) = 0.18Ω 150°C Operating Temperature G Fast Switching ID = 18A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combinations of fast switching , ruggedized device design, low on-resistance and cost- effectiveness. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any D 2 Pak TO-262 existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.The through-hole version (IRF640L) is available for low-profile applications. Absolute Max

1.11. irf640.pdf Size:178K _international_rectifier

IRF640
IRF640

1.12. irf640s-l.pdf Size:935K _international_rectifier

IRF640
IRF640
PD - 95113 IRF640S/LPbF • Lead-Free 3/16/04 Document Number: 91037 www.vishay.com 1 IRF640S/LPbF Document Number: 91037 www.vishay.com 2 IRF640S/LPbF Document Number: 91037 www.vishay.com 3 IRF640S/LPbF Document Number: 91037 www.vishay.com 4 IRF640S/LPbF Document Number: 91037 www.vishay.com 5 IRF640S/LPbF Document Number: 91037 www.vishay.com 6 IRF640S/LPbF Document Number: 91037 www.vishay.com 7 IRF640S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) I I I I I I I I I I = I OR I I I I = I I = = I Document Number: 91037 www.vishay.com 8 IRF640S/LPbF TO-262 Package Outline IGBT 1- GATE 2- COLLECTOR 3- EMITTER TO-262 Part Marking Information I I I I I I I I I = I OR I I I I = I I = = I Document Number: 91037 www.vishay.com 9 IRF640S/LPbF D2Pak Tape & Reel Infomation Dimensions are shown in millimeters (inc

1.13. irf640a.pdf Size:942K _samsung

IRF640
IRF640
Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.18 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 18 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 ?(Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 200 o Continuous Drain Current (TC=25 C ) 18 ID A Continuous Drain Current (TC=100 oC 11.4 ) IDM Drain Current-Pulsed 1 72 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 216 O IAR Avalanche Current 1 18 A O EAR Repetitive Avalanche Energy 1 mJ 13.9 O 3 dv/dt Peak Diode Recovery dv/dt V/ns 5.0 O Total Power Dissipation (TC=25 o ) C 139 W PD o Linear Derating Factor C 1.11 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 Purp

1.14. irf640_sihf640.pdf Size:196K _vishay

IRF640
IRF640
IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 200 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.18 RoHS* • Fast Switching Qg (Max.) (nC) 70 COMPLIANT • Ease of Paralleling Qgs (nC) 13 Qgd (nC) 39 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation S levels to approximately 50 W. The low thermal resistance D G S and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. N-Channel MOSFET ORDERING INFORMATION TO-220AB Package IRF640PbF Lead (Pb)-free SiHF640-E3 IRF640 SnPb SiHF640 ABSOLUTE

1.15. irf640.pdf Size:183K _inchange_semiconductor

IRF640
IRF640
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF640 DESCRIPTION ·Drain Current –ID= 18A@ TC=25? ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18?(Max) ·Fast Switching Speed ·Low Drive Requirement APPLICATIONS ·Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25? 18 A Ptot Total Dissipation@TC=25? 125 W Tj Max. Operating Junction Temperature 150 ? Tstg Storage Temperature Range -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT ?/W Rth j-c Thermal Resistance,Junction to Case 1.0 ?/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Pr

1.16. irf640.pdf Size:976K _wietron

IRF640
IRF640
IRF640 N-Channel Enhancement DRAIN CURRENT Mode POWER MOSFET 18 AMPERES 3 DRAIN DRAIN SOURCE VOLTAGE P b Lead(Pb)-Free 200 VOLTAGE 1 GATE Features: 2 *Super High Dense Cell Design For Low RDS(ON) SOURCE RDS(ON)<0.18?@VGS=10V 1 * Single Pulse Avalanche Energy Rated 2 3 * SOA is Power Dissipation Limited 1. GATE 2. DRAIN * Nanosecond Switching Speed 3. SOURCE * Linear Transfer Characteristics TO-220AB * High Input Impedance Maximum Ratings(Ta=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 200 V VGS Gate-Source Voltage ±20 Continuous Drain Current, (VGS@10V, TC=25?C) 18 ID , (VGS@10V, TC=100?C) 11 A Pulsed Drain Current IDM 72 PD 125 Total Power Dissipation(TC=25?C) W R?JC 1 ?C/W Thermal Resistance Junction-case Thermal Resistance Junction-ambient R?JA 62 ?C/W ?C +150 Operating Junction Temperature Range T J Storage Temperature Range T ?C stg - 55~+150 WEITRON 1/6 04-Nov-08 http://www.weitron.com.

See also transistors datasheet: IRF631 , IRF632 , IRF633 , IRF634 , IRF634A , IRF634S , IRF635 , IRF636A , IRF460 , IRF640A , IRF640FI , IRF640L , IRF640S , IRF641 , IRF642 , IRF643 , IRF644 .

Keywords

 IRF640 Datasheet  IRF640 Datenblatt  IRF640 RoHS  IRF640 Distributor
 IRF640 Application Notes  IRF640 Component  IRF640 Circuit  IRF640 Schematic
 IRF640 Equivalent  IRF640 Cross Reference  IRF640 Data Sheet  IRF640 Fiche Technique

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