MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF640
  IRF640
  IRF640
 
IRF640
  IRF640
  IRF640
 
IRF640
  IRF640
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AON6240
AON6242 ..AP03N70I-H
AP03N70I-HF ..AP2326GN-HF
AP2327GN-HF ..AP4432GM
AP4433GM-HF ..AP70L02GH
AP70L02GJ ..AP9565BGM-HF
AP9565GEH ..AP9992GP-A-HF
AP9992GP-HF ..APT60M90JN
APT8015JVFR ..AUIRFR9024N
AUIRFS3004 ..BF961
BF963 ..BLF7G22L-200
BLF7G22L-250P ..BSC900N20NS3G
BSD223P ..BUK104-50SP
BUK106-50L ..BUK7606-55B
BUK7606-75B ..BUK9675-55A
BUK9775-55 ..CEB12N5
CEB12N6 ..CEK01N6G
CEK01N7 ..CES2323
CES2324 ..DMN2114SN
DMN2170U ..F5031
F5032 ..FDB8832
FDB8832_F085 ..FDD8870_F085
FDD8874 ..FDMS2502SDC
FDMS2504SDC ..FDP42AN15A0
FDP51N25 ..FDS6690A
FDS6690AS ..FK25SM-6
FK30SM-5 ..FQI4N90
FQI50N06 ..FQU2N60C
FQU2N90TU_AM002 ..FSJ260R
FSJ264D ..H5N5016PL
H5N6001P ..HAT2167N
HAT2168H ..HUF75652G3
HUF75842P3 ..IPB100N04S2-04
IPB100N04S2L-03 ..IPD50N06S4-09
IPD50N06S4L-08 ..IPP04N03LBG
IPP052N06L3G ..IPW60R199CP
IPW60R250CP ..IRF3709Z
IRF3709ZCS ..IRF6711S
IRF6712S ..IRF7704G
IRF7705 ..IRF9Z35
IRFB11N50A ..IRFI1010N
IRFI1310N ..IRFP3306
IRFP331 ..IRFS11N50A
IRFS130 ..IRFS9641
IRFS9642 ..IRFZ22
IRFZ22FI ..IRLIZ24N
IRLIZ34A ..ITF86116SQT
ITF86130SK8T ..IXFH40N30Q
IXFH40N50Q ..IXFM40N30
IXFM42N20 ..IXFR38N80Q2
IXFR40N50Q2 ..IXFX360N15T2
IXFX38N80Q2 ..IXTC110N25T
IXTC13N50 ..IXTH90P10P
IXTH96N20P ..IXTP4N60P
IXTP4N80P ..IXTU1R4N60P
IXTU2N80P ..KF5N53DS
KF5N53F ..KP7173A
KP723A ..MKE11R600DCGFC
MKE11R600DCGFC ..MTC4506Q8
MTC5806Q8 ..MTN4N60J3
MTN4N65FP ..NDC631N
NDC632P ..NTD6416AN
NTD6416ANL ..NX3008PBK
NX3008PBKS ..PMG370XN
PMG85XP ..PSMN5R6-100XS
PSMN5R8-30LL ..RFG40N10LE
RFG45N06 ..RJK1526DPF
RJK1526DPJ ..RSJ250P10
RSJ300N10 ..SDF460JED
SDF4N100JAA ..SGSP381
SGSP382 ..SML1001R1AN
SML1001R1BN ..SML802R8KN
SML8030CFN ..SPW11N80C3
SPW12N50C3 ..SSH9N90A
SSI1N50A ..SSM6K30FE
SSM6K31FE ..STB100NF03L-03
STB100NF04 ..STD25NF10LA
STD26NF10 ..STF20NF20
STF20NK50Z ..STL150N3LLH6
STL15DN4F5 ..STP30NF20
STP30NM30N ..STP8NK80Z
STP8NK80ZFP ..STW25N95K3
STW25NM60ND ..TK19J55D
TK1P90A ..TPC8058-H
TPC8059-H ..TPCL4202
TPCL4203 ..UT9564
UT9971P ..ZVP3306F
ZVP3310A ..ZXMS6006SG
 
IRF640 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF640 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF640

Type of IRF640 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 125

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 18

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF640 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 2100

Maximum drain-source on-state resistance (Rds), Ohm: 0.18

Package: TO220

Equivalent transistors for IRF640

IRF640 PDF doc:

1.1. irf640.rev1.pdf Size:109K _motorola

IRF640
IRF640
ClibPDF - www.fastio.com ClibPDF - www.fastio.com ClibPDF - www.fastio.com

1.2. irf640_s_1.pdf Size:97K _philips

IRF640
IRF640
Philips Semiconductors Product specification N-channel TrenchMOS? transistor IRF640, IRF640S FEATURES SYMBOL QUICK REFERENCE DATA • ’Trench’ technology d • Low on-state resistance VDSS = 200 V • Fast switching • Low thermal resistance ID = 16 A g RDS(ON) ? 180 m? s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The IRF640 is supplied in the SOT78 (TO220AB) conventional leaded package. The IRF640S is supplied in the SOT404 (D2PAK) surface mounting package. PINNING SOT78 (TO220AB) SOT404 (D2PAK) PIN DESCRIPTION tab tab 1 gate 2 drain1 3 source 2 tab drain 1 3 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drain-source

1.3. irf640_irf640fp.pdf Size:332K _st

IRF640
IRF640
IRF640 IRF640FP N-channel 200V - 0.15? - 18A TO-220/TO-220FP Mesh overlay™ Power MOSFET General features Type VDSS RDS(on) ID IRF640 200V <0.18? 18A IRF640FP 200V <0.18? 18A ¦ Extremely high dv/dt capability 3 3 2 2 ¦ Very low intrinsic capacitances 1 1 TO-220 TO-220FP ¦ Gate charge minimized Description This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with Internal schematic diagram standard parts from various sources. Applications ¦ Switching application Order codes Part number Marking Package Packaging IRF640 IRF640 TO-220 Tube IRF640FP IRF640FP TO-220FP Tube September 2006 Rev 9 1/14 www.st.com 14 Obsolete Product(s) - Obsolete Product(s) Contents IRF640 - IRF640FP Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . .

1.4. irf640f_fp.pdf Size:107K _st

IRF640
IRF640
IRF640 IRF640FP ? N - CHANNEL 200V - 0.150? - 18A TO-220/TO-220FP MESH OVERLAY? MOSFET TYPE VDSS RDS(on) ID IRF640 200 V < 0.18 ? 18 A IRF640FP 200 V < 0.18 18 A ? TYPICAL RDS(on) = 0.150 ? EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION 3 3 2 2 This power MOSFET is designed using he 1 1 company’s consolidated strip layout-based MESH OVERLAY process. This technology matches ? TO-220 TO-220FP and improves the performances compared with standard parts from various sources. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF640 IRF640FP V Drain-source Voltage (V = 0) 200 V DS GS VDGR 200 V Drain- gate Voltage (RGS = 20 k ) ? VGS Gate-source Voltage ± 20 V o ID Drain Current (continuous) at Tc = 25 C 18 18(**) A o ID Drain Curr

1.5. irf640.pdf Size:57K _st

IRF640
IRF640
IRF640 IRF640FP ? N - CHANNEL 200V - 0.150? - 18A - TO-220/FP MESH OVERLAY? MOSFET TYPE VDSS RDS(on) ID IRF640 200 V < 0.18 ? 18 A IRF640FP 200 V < 0.18 ? 18 A TYPICAL R = 0.150 ? DS(on) EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION 3 3 2 2 This power MOSFET is designed using he 1 1 company’s consolidated strip layout-based MESH OVERLAY process. This technology matches ? TO-220 TO-220FP and improves the performances compared with standard parts from various sources. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit IRF640 IRF640FP VDS Drain-source Voltage (VGS = 0) 200 V VDGR Drain- gate Voltage (RGS = 20 k ) 200 V ? VGS Gate-source Voltage ± 20 V o ID Drain Current (continuous) at Tc = 25 C 18 18(**) A o ID Drain Current (co

1.6. irf640b_irfs640b.pdf Size:916K _fairchild_semi

IRF640
IRF640
November 2001 IRF640B/IRFS640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 18A, 200V, RDS(on) = 0.18? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 45 nC) planar, DMOS technology. • Low Crss ( typical 45 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter IRF640B IRFS640B Units VDSS Drain-Source Voltage 200 V ID Drain Current - Cont

1.7. irf640n.pdf Size:155K _international_rectifier

IRF640
IRF640
PD - 94006 IRF640N IRF640NS IRF640NL Advanced Process Technology HEXFET® Power MOSFET Dynamic dv/dt Rating D 175°C Operating Temperature VDSS = 200V Fast Switching Fully Avalanche Rated RDS(on) = 0.15? Ease of Paralleling G Simple Drive Requirements Description ID = 18A Fifth Generation HEXFET® Power MOSFETs from S International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surfac

1.8. irf640pbf.pdf Size:2211K _international_rectifier

IRF640
IRF640
PD - 94930 IRF640PbF • Lead-Free 1/8/04 Document Number: 91036 www.vishay.com 1 IRF640PbF Document Number: 91036 www.vishay.com 2 IRF640PbF Document Number: 91036 www.vishay.com 3 IRF640PbF Document Number: 91036 www.vishay.com 4 IRF640PbF Document Number: 91036 www.vishay.com 5 IRF640PbF Document Number: 91036 www.vishay.com 6 IRF640PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045) 0.

1.9. irf640s.pdf Size:228K _international_rectifier

IRF640
IRF640
PD -90902B IRF640S/L HEXFET® Power MOSFET Surface Mount (IRF640S) D Low-profile through-hole (IRF640L) VDSS = 200V Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating RDS(on) = 0.18? 150°C Operating Temperature G Fast Switching ID = 18A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier provide the designer with the best combinations of fast switching , ruggedized device design, low on-resistance and cost- effectiveness. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any D 2 Pak TO-262 existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.The through-hole version (IRF640L) is available for low-profile applications. Absolute Maximum Ra

1.10. irf640.pdf Size:178K _international_rectifier

IRF640
IRF640

1.11. irf640s-l.pdf Size:935K _international_rectifier

IRF640
IRF640
PD - 95113 IRF640S/LPbF • Lead-Free 3/16/04 Document Number: 91037 www.vishay.com 1 IRF640S/LPbF Document Number: 91037 www.vishay.com 2 IRF640S/LPbF Document Number: 91037 www.vishay.com 3 IRF640S/LPbF Document Number: 91037 www.vishay.com 4 IRF640S/LPbF Document Number: 91037 www.vishay.com 5 IRF640S/LPbF Document Number: 91037 www.vishay.com 6 IRF640S/LPbF Document Number: 91037 www.vishay.com 7 IRF640S/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) I I I I I I I I I I = I OR I I I I = I I = = I Document Number: 91037 www.vishay.com 8 IRF640S/LPbF TO-262 Package Outline IGBT 1- GATE 2- COLLECTOR 3- EMITTER TO-262 Part Marking Information I I I I I I I I I = I OR I I I I = I I = = I Document Number: 91037 www.vishay.com 9 IRF640S/LPbF D2Pak Tape & Reel Infomation Dimensions are shown in millimeters (inc

1.12. irf640a.pdf Size:942K _samsung

IRF640
IRF640
Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.18 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 18 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 ?(Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 200 o Continuous Drain Current (TC=25 C ) 18 ID A Continuous Drain Current (TC=100 oC 11.4 ) IDM Drain Current-Pulsed 1 72 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 216 O IAR Avalanche Current 1 18 A O EAR Repetitive Avalanche Energy 1 mJ 13.9 O 3 dv/dt Peak Diode Recovery dv/dt V/ns 5.0 O Total Power Dissipation (TC=25 o ) C 139 W PD o Linear Derating Factor C 1.11 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 Purp

1.13. irf640_sihf640.pdf Size:196K _vishay

IRF640
IRF640
IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 200 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.18 RoHS* • Fast Switching Qg (Max.) (nC) 70 COMPLIANT • Ease of Paralleling Qgs (nC) 13 Qgd (nC) 39 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation S levels to approximately 50 W. The low thermal resistance D G S and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. N-Channel MOSFET ORDERING INFORMATION TO-220AB Package IRF640PbF Lead (Pb)-free SiHF640-E3 IRF640 SnPb SiHF640 ABSOLUTE

1.14. irf640.pdf Size:183K _inchange_semiconductor

IRF640
IRF640
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF640 DESCRIPTION ·Drain Current –ID= 18A@ TC=25? ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18?(Max) ·Fast Switching Speed ·Low Drive Requirement APPLICATIONS ·Designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25? 18 A Ptot Total Dissipation@TC=25? 125 W Tj Max. Operating Junction Temperature 150 ? Tstg Storage Temperature Range -55~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT ?/W Rth j-c Thermal Resistance,Junction to Case 1.0 ?/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Pr

1.15. irf640.pdf Size:976K _wietron

IRF640
IRF640
IRF640 N-Channel Enhancement DRAIN CURRENT Mode POWER MOSFET 18 AMPERES 3 DRAIN DRAIN SOURCE VOLTAGE P b Lead(Pb)-Free 200 VOLTAGE 1 GATE Features: 2 *Super High Dense Cell Design For Low RDS(ON) SOURCE RDS(ON)<0.18?@VGS=10V 1 * Single Pulse Avalanche Energy Rated 2 3 * SOA is Power Dissipation Limited 1. GATE 2. DRAIN * Nanosecond Switching Speed 3. SOURCE * Linear Transfer Characteristics TO-220AB * High Input Impedance Maximum Ratings(Ta=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 200 V VGS Gate-Source Voltage ±20 Continuous Drain Current, (VGS@10V, TC=25?C) 18 ID , (VGS@10V, TC=100?C) 11 A Pulsed Drain Current IDM 72 PD 125 Total Power Dissipation(TC=25?C) W R?JC 1 ?C/W Thermal Resistance Junction-case Thermal Resistance Junction-ambient R?JA 62 ?C/W ?C +150 Operating Junction Temperature Range T J Storage Temperature Range T ?C stg - 55~+150 WEITRON 1/6 04-Nov-08 http://www.weitron.com.

See also transistors datasheet: IRF631 , IRF632 , IRF633 , IRF634 , IRF634A , IRF634S , IRF635 , IRF636A , IRF460 , IRF640A , IRF640FI , IRF640L , IRF640S , IRF641 , IRF642 , IRF643 , IRF644 .

Keywords

 IRF640 Datasheet  IRF640 Datenblatt  IRF640 RoHS  IRF640 Distributor
 IRF640 Application Notes  IRF640 Component  IRF640 Circuit  IRF640 Schematic
 IRF640 Equivalent  IRF640 Cross Reference  IRF640 Data Sheet  IRF640 Fiche Technique

(C) 2005 All Right reserved Bipolar || MOSFET || IGBT | | Manufacturer Sites || SMD Code || Packages