All MOSFET Datasheet

 

CS840_A8D MOSFET (IC) Datasheet. Cross Reference Search. CS840_A8D Equivalent

Type Designator: CS840_A8D

Type of CS840_A8D transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 100

Maximum drain-source voltage |Uds|, V: 500

Maximum gate-source voltage |Ugs|, V: 30

Maximum drain current |Id|, A: 7

Maximum junction temperature (Tj), °C: 150

Rise Time of CS840_A8D transistor (tr), nS: 16.8

Drain-source Capacitance (Cd), pF: 110

Maximum drain-source on-state resistance (Rds), Ohm: 0.9

Package: TO220AB

CS840_A8D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CS840_A8D PDF doc:

1.1. cs840_a8d.pdf Size:521K _crhj

CS840_A8D
CS840_A8D

Silicon N-Channel Power MOSFET R ○ CS840 A8D General Description: VDSS 500 V CS840 A8D, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.68 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

2.1. cs840_a8h.pdf Size:348K _crhj

CS840_A8D
CS840_A8D

Silicon N-Channel Power MOSFET R ○ CS840 A8H General Description: VDSS 500 V CS840 A8H, the silicon N-channel Enhanced VDMOSFETs, ID 8 A PD (TC=25℃) 110 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.57 Ω the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

5.1. cs840f_a9h.pdf Size:346K _crhj

CS840_A8D
CS840_A8D

Silicon N-Channel Power MOSFET R ○ CS840F A9H General Description: VDSS 500 V CS840F A9H, the silicon N-channel Enhanced ID 8 A PD (TC=25℃) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

5.2. cs840f_a9d.pdf Size:521K _crhj

CS840_A8D
CS840_A8D

Silicon N-Channel Power MOSFET R ○ CS840F A9D General Description: VDSS 500 V CS840F A9D, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

See also transistors datasheet: CS7N65F_A9TDY , CS7N70_ARD , CS7N80_A8 , CS7N80F_A9 , CS830_A3RD , CS830_A4RD , CS830_A8RD , CS830F_A9RD , 2SK4106 , CS840_A8H , CS840F_A9D , CS840F_A9H , CS8N25_A4H , CS8N25_A8H , CS8N25F_A9 , CS8N50_A8R , CS8N50F_A9R .

Search Terms:

 CS840_A8D - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


CS840_A8D
  CS840_A8D
  CS840_A8D
  CS840_A8D
 
CS840_A8D
  CS840_A8D
  CS840_A8D
  CS840_A8D
 

social 

LIST

Last Update

MOSFET: 2SK1202 | SIHFD123 | IRFD123 | IRF630MFP | SSM70T03J | SSM70T03H | AP9916J | AP9916H | RFP2N18L | RFL1P10 | RFL1P08 | RFL2N06L | RFL2N06 | RFL2N05L | RFL2N05 |

Enter a full or partial SMD code with a minimum of 2 letters or numbers