All MOSFET. CS840_A8D Datasheet

 

CS840_A8D MOSFET. Datasheet pdf. Equivalent

Type Designator: CS840_A8D

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 16.8 nS

Drain-Source Capacitance (Cd): 110 pF

Maximum Drain-Source On-State Resistance (Rds): 0.9 Ohm

Package: TO220AB

CS840_A8D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CS840_A8D PDF doc:

1.1. cs840_a8d.pdf Size:521K _crhj

CS840_A8D
CS840_A8D

Silicon N-Channel Power MOSFET R ○ CS840 A8D General Description: VDSS 500 V CS840 A8D, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 100 W VDMOSFETs, is obtained by the self-aligned planar RDS(ON)Typ 0.68 Ω Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power

2.1. cs840_a8h.pdf Size:348K _crhj

CS840_A8D
CS840_A8D

Silicon N-Channel Power MOSFET R ○ CS840 A8H General Description: VDSS 500 V CS840 A8H, the silicon N-channel Enhanced VDMOSFETs, ID 8 A PD (TC=25℃) 110 W is obtained by the self-aligned planar Technology which reduce RDS(ON)Typ 0.57 Ω the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

5.1. cs840f_a9h.pdf Size:346K _crhj

CS840_A8D
CS840_A8D

Silicon N-Channel Power MOSFET R ○ CS840F A9H General Description: VDSS 500 V CS840F A9H, the silicon N-channel Enhanced ID 8 A PD (TC=25℃) 45 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.57 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various pow

5.2. cs840f_a9d.pdf Size:521K _crhj

CS840_A8D
CS840_A8D

Silicon N-Channel Power MOSFET R ○ CS840F A9D General Description: VDSS 500 V CS840F A9D, the silicon N-channel Enhanced ID 7 A PD(TC=25℃) 35 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.68 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

Datasheet: CS7N65F_A9TDY , CS7N70_ARD , CS7N80_A8 , CS7N80F_A9 , CS830_A3RD , CS830_A4RD , CS830_A8RD , CS830F_A9RD , 2SK4106 , CS840_A8H , CS840F_A9D , CS840F_A9H , CS8N25_A4H , CS8N25_A8H , CS8N25F_A9 , CS8N50_A8R , CS8N50F_A9R .

 


CS840_A8D
  CS840_A8D
  CS840_A8D
  CS840_A8D
 
CS840_A8D
  CS840_A8D
  CS840_A8D
  CS840_A8D
 

social 

LIST

Last Update

MOSFET: 2SK642 | 2SK641 | SVF2N60D | SVF2N60T | SVF2N60F | SVF2N60M | FQP630 | FMR23N50E | FMV23N50E | FMH23N50E | STK0460F | UTC50N06L | TSP8N60M | TSF8N60M | STK630F |

Enter a full or partial SMD code with a minimum of 2 letters or numbers