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IRF643 MOSFET (IC) Datasheet. Cross Reference Search. IRF643 Equivalent

Type Designator: IRF643

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd), W: 125

Maximum Drain-Source Voltage |Vds|, V: 150

Maximum Gate-Source Voltage |Vgs|, V:

Maximum Drain Current |Id|, A: 16

Maximum Junction Temperature (Tj), °C: 150

Rise Time (tr), nS:

Drain-Source Capacitance (Cd), pF:

Maximum Drain-Source On-State Resistance (Rds), Ohm: 0.18

Package: TO220

IRF643 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF643 PDF doc:

1.1. irf640_irf641_irf642_irf643_rf1s640.pdf Size:51K _harris_semi

IRF643
IRF643

IRF640, IRF641, IRF642, S E M I C O N D U C T O R IRF643, RF1S640, RF1S640SM 16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 16A and 18A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power • rDS(ON) = 0.18Ω and 0.22Ω MOSFETs designed, tested, and guar

5.1. irf640.rev1.pdf Size:109K _motorola

IRF643
IRF643

ClibPDF - www.fastio.com ClibPDF - www.fastio.com ClibPDF - www.fastio.com

5.2. irf640_s_1.pdf Size:97K _philips

IRF643
IRF643

Philips Semiconductors Product specification N-channel TrenchMOS? transistor IRF640, IRF640S FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 200 V Fast switching Low thermal resistance ID = 16 A g RDS(ON) ? 180 m? s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use i

5.3. irf640f_fp.pdf Size:107K _st

IRF643
IRF643

IRF640 IRF640FP ? N - CHANNEL 200V - 0.150? - 18A TO-220/TO-220FP MESH OVERLAY? MOSFET TYPE VDSS RDS(on) ID IRF640 200 V < 0.18 ? 18 A IRF640FP 200 V < 0.18 18 A ? TYPICAL RDS(on) = 0.150 ? EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION 3 3 2 2 This power MOSFET is designed using he 1 1 companys consolidated strip layout-bas

5.4. irf640.pdf Size:57K _st

IRF643
IRF643

IRF640 IRF640FP ? N - CHANNEL 200V - 0.150? - 18A - TO-220/FP MESH OVERLAY? MOSFET TYPE VDSS RDS(on) ID IRF640 200 V < 0.18 ? 18 A IRF640FP 200 V < 0.18 ? 18 A TYPICAL R = 0.150 ? DS(on) EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION 3 3 2 2 This power MOSFET is designed using he 1 1 companys consolidated strip layout-based

5.5. irf640_irf640fp.pdf Size:332K _st

IRF643
IRF643

IRF640 IRF640FP N-channel 200V - 0.15? - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS(on) ID IRF640 200V <0.18? 18A IRF640FP 200V <0.18? 18A Extremely high dv/dt capability 3 3 2 2 Very low intrinsic capacitances 1 1 TO-220 TO-220FP Gate charge minimized Description This power MOSFET is designed using the companys consolidated strip layout-b

5.6. irf640b_irfs640b.pdf Size:916K _fairchild_semi

IRF643
IRF643

November 2001 IRF640B/IRFS640B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 18A, 200V, RDS(on) = 0.18? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC) planar, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been especially tailored to Fast switchin

5.7. irf644b_irfs644b.pdf Size:900K _fairchild_semi

IRF643
IRF643

November 2001 IRF644B/IRFS644B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 14A, 250V, RDS(on) = 0.28? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 47 nC) planar, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailored to Fast switchin

5.8. irf644b.pdf Size:644K _fairchild_semi

IRF643
IRF643

December 2013 IRF644B N-Channel BFET MOSFET 250 V, 14 A, 280 mΩ Description Features These N-Channel enhancement mode power field effect • 14 A, 250 V, RDS(on) = 280 mΩ @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge (Typ. 47 nC) planar, DMOS technology. This advanced technology has • Low Crss (Typ. 30 pF) been especially tailored to mi

5.9. irf640_rf1s640_rf1s640sm.pdf Size:128K _fairchild_semi

IRF643
IRF643

IRF640, RF1S640, RF1S640SM Data Sheet January 2002 18A, 200V, 0.180 Ohm, N-Channel Power Features MOSFETs • 18A, 200V These are N-Channel enhancement mode silicon gate • rDS(ON) = 0.180Ω power field effect transistors. They are advanced power • Single Pulse Avalanche Energy Rated MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakd

5.10. irf640s.pdf Size:228K _international_rectifier

IRF643
IRF643

PD -90902B IRF640S/L HEXFET® Power MOSFET Surface Mount (IRF640S) D Low-profile through-hole (IRF640L) VDSS = 200V Available in Tape & Reel (IRF640S) Dynamic dv/dt Rating RDS(on) = 0.18Ω 150°C Operating Temperature G Fast Switching ID = 18A Fully Avalanche Rated S Description Third Generation HEXFETs from International Rectifier provide the designer with the best co

5.11. irf640s-l.pdf Size:935K _international_rectifier

IRF643
IRF643

PD - 95113 IRF640S/LPbF Lead-Free 3/16/04 Document Number: 91037 www.vishay.com 1 IRF640S/LPbF Document Number: 91037 www.vishay.com 2 IRF640S/LPbF Document Number: 91037 www.vishay.com 3 IRF640S/LPbF Document Number: 91037 www.vishay.com 4 IRF640S/LPbF Document Number: 91037 www.vishay.com 5 IRF640S/LPbF Document Number: 91037 www.vishay.com 6 IRF640S/LPbF Document N

5.12. irf644.pdf Size:919K _international_rectifier

IRF643
IRF643

PD - 94871 IRF644PbF Lead-Free 12/5/03 Document Number: 91039 www.vishay.com 1 IRF644PbF Document Number: 91039 www.vishay.com 2 IRF644PbF Document Number: 91039 www.vishay.com 3 IRF644PbF Document Number: 91039 www.vishay.com 4 IRF644PbF Document Number: 91039 www.vishay.com 5 IRF644PbF Document Number: 91039 www.vishay.com 6 IRF644PbF TO-220AB Package Outline Dimen

5.13. irf640pbf.pdf Size:2211K _international_rectifier

IRF643
IRF643

PD - 94930 IRF640PbF Lead-Free 1/8/04 Document Number: 91036 www.vishay.com 1 IRF640PbF Document Number: 91036 www.vishay.com 2 IRF640PbF Document Number: 91036 www.vishay.com 3 IRF640PbF Document Number: 91036 www.vishay.com 4 IRF640PbF Document Number: 91036 www.vishay.com 5 IRF640PbF Document Number: 91036 www.vishay.com 6 IRF640PbF TO-220AB Package Outline Dimens

5.14. irf644spbf.pdf Size:2262K _international_rectifier

IRF643
IRF643

PD - 95116 IRF644SPbF Lead-Free 3/16/04 Document Number: 91040 www.vishay.com 1 IRF644SPbF Document Number: 91040 www.vishay.com 2 IRF644SPbF Document Number: 91040 www.vishay.com 3 IRF644SPbF Document Number: 91040 www.vishay.com 4 IRF644SPbF Document Number: 91040 www.vishay.com 5 IRF644SPbF Document Number: 91040 www.vishay.com 6 IRF644SPbF D2Pak Package Outline D

5.15. irf644n.pdf Size:291K _international_rectifier

IRF643
IRF643

PD - 94859 IRF644NPbF IRF644NS l Advanced Process Technology IRF644NL l Dynamic dv/dt Rating l 175C Operating Temperature HEXFET Power MOSFET l Fast Switching D l Fully Avalanche Rated VDSS = 250V l Ease of Paralleling l Simple Drive Requirements l Lead-Free (only the TO-220AB RDS(on) = 240m? version is currently available in a G lead-free configuration) Description ID = 14A S

5.16. irf644s.pdf Size:219K _international_rectifier

IRF643
IRF643

5.17. irf640n.pdf Size:155K _international_rectifier

IRF643
IRF643

PD - 94006 IRF640N IRF640NS IRF640NL Advanced Process Technology HEXFET Power MOSFET Dynamic dv/dt Rating D 175C Operating Temperature VDSS = 200V Fast Switching Fully Avalanche Rated RDS(on) = 0.15? Ease of Paralleling G Simple Drive Requirements Description ID = 18A Fifth Generation HEXFET Power MOSFETs from S International Rectifier utilize advanced processing tech

5.18. irf640.pdf Size:178K _international_rectifier

IRF643
IRF643

5.19. irf644_irf645.pdf Size:506K _international_rectifier

IRF643
IRF643



5.20. irf640a.pdf Size:942K _samsung

IRF643
IRF643

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.18 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 18 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 200V Lower RDS(ON) : 0.144 ?(Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

5.21. irf644a.pdf Size:935K _samsung

IRF643
IRF643

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.28 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Lower RDS(ON) : 0.214 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Unit

5.22. irf644s_sihf644s.pdf Size:167K _vishay

IRF643
IRF643

IRF644S, SiHF644S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 Surface Mount RDS(on) (?)VGS = 10 V 0.28 Available in Tape and Reel Qg (Max.) (nC) 68 Dynamic dV/dt Rating Qgs (nC) 11 Repetitive Avalanche Rated Fast Switching Qgd (nC) 35 Ease of Paralleling Configuration Single Simple Drive

5.23. irf644_sihf644.pdf Size:202K _vishay

IRF643
IRF643

IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.28 RoHS* Fast Switching Qg (Max.) (nC) 68 COMPLIANT Ease of Paralleling Qgs (nC) 11 Qgd (nC) 35 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220A

5.24. irf640_sihf640.pdf Size:196K _vishay

IRF643
IRF643

IRF640, SiHF640 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 200 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.18 RoHS* Fast Switching Qg (Max.) (nC) 70 COMPLIANT Ease of Paralleling Qgs (nC) 13 Qgd (nC) 39 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220A

5.25. irf646.pdf Size:67K _intersil

IRF643
IRF643

IRF646 Data Sheet June 1999 File Number 2169.3 14A, 275V, 0.280 Ohm, N-Channel Power Features MOSFET • 14A, 275V This N-Channel enhancement mode silicon gate power field • rDS(ON) = 0.280Ω effect transistor is an advanced power MOSFET designed, • Single Pulse Avalanche Energy Rated tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode

5.26. irf640.pdf Size:183K _inchange_semiconductor

IRF643
IRF643

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF640 DESCRIPTION ·Drain Current –ID= 18A@ TC=25? ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.18?(Max) ·Fast Switching Speed ·Low Drive Requirement APPLICATIONS ·Designed for low voltage, high speed power switching applications such as s

5.27. irf640.pdf Size:976K _wietron

IRF643
IRF643

IRF640 N-Channel Enhancement DRAIN CURRENT Mode POWER MOSFET 18 AMPERES 3 DRAIN DRAIN SOURCE VOLTAGE P b Lead(Pb)-Free 200 VOLTAGE 1 GATE Features: 2 *Super High Dense Cell Design For Low RDS(ON) SOURCE RDS(ON)<0.18Ω@VGS=10V 1 * Single Pulse Avalanche Energy Rated 2 3 * SOA is Power Dissipation Limited 1. GATE 2. DRAIN * Nanosecond Switching Speed 3. SOURCE * Linear Tra

See also transistors datasheet: IRF636A , IRF640 , IRF640A , IRF640FI , IRF640L , IRF640S , IRF641 , IRF642 , 2N3824 , IRF644 , IRF644A , IRF644S , IRF645 , IRF646 , IRF650A , IRF654A , IRF710 .

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