MOSFET Datasheet

Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ552L
2SJ552S ..2SK1515
2SK1516 ..2SK2139
2SK214 ..2SK2738
2SK2740 ..2SK3132
2SK3133 ..2SK3633
2SK3637 ..2SK443
2SK444 ..3N206
3N209 ..5LN01M
5LN01S ..AO4714
AO4718 ..AOD2910
AOD2916 ..AON4803
AON4805L ..AOT11C60
AOT11N60 ..AOW284
AOW2918 ..AP16N50W
AP18N20AGS-HF ..AP3990R-HF
AP3990S-HF ..AP4955GM
AP4957AGM ..AP9412GP
AP9414GM ..AP9962BGH-HF
AP9962GH ..APT10090BFLL
APT10090BLL ..APT5560AN
AUIRFB3607 ..BF1211R
BF1211WR ..BLF6G20-180RN
BLF6G20-230PRN ..BSC057N03MSG
BSS84S6R ..BUK7225-55A
BUK7226-75A ..BUK9524-55A
BUK9528-55 ..BUZ903D
CEF02N65A ..CEP35P10
CEP4060A ..DMG1012T
DMG1012UW ..ECG454
ECG455 ..FDB12N50U
FDMC7660S ..FDP036N10A
FDP036N10A ..FDS4141_F085
FDS4410 ..FDY101PZ
FDY102PZ ..FQD13N10
FQD13N10 ..FQPF5P20
FQPF630 ..FRS230D
FRS230H ..H2305N
H2N7000 ..HAT2038R
HAT2039R ..HUF75307P3
HUF75307T3ST ..IPA90R1K2C3
IPA90R340C3 ..IPD082N10N3G
IPD088N04LG ..IPI65R280C6
IPI65R380C6 ..IPP80N06S2L-06
IPP80N06S2L-07 ..IRF2204L
IRF2204S ..IRF640A
IRF640FI ..IRF7420
IRF7421D1 ..IRF9521
IRF9522 ..IRFF430
IRFF9024 ..IRFP054
IRFP054N ..IRFR2607Z
IRFR2905Z ..IRFS732
IRFS733 ..IRFU9222
IRFU9310 ..IRL640S
IRL641 ..IRLU3410
IRLU3636 ..IXFH15N60
IXFH15N80 ..IXFK55N50F
IXFP76N15T2 ..IXFV36N50P
IXTA300N04T2 ..IXTH3N100P
IXTH3N120 ..IXTP1N100P
IXTP1N120P ..IXTT110N10P
IXTT11P50 ..JANSR2N7411
JFTJ105 ..KMB6D6N30Q
KMB7D0DN40Q ..KU310N10D
KU310N10P ..MTB35N04J3
MTB35N06ZL ..MTN2510LE3
MTN2510LJ3 ..MTP6405N6
MTP658G6 ..NTD110N02R
NTD14N03R ..NTR4101
NTR4170N ..PHT11N06LT
PSMN1R2-25YL ..RF1S4N100SM
RQJ0601DGDQS ..SDF12N100
SDF12N90 ..SFT1450
SFU2955 ..SMK0170I
SMK0260IS ..SML50W40
SML6017AFN ..SPI20N65C3
SPI21N50C3 ..SSG5509A
SSG6612N ..SSM3K43FS
SSRF90N06-10 ..STD120N4LF6
STD12N05 ..STE24N90
STE250N05 ..STI35N65M5
STI42N65M5 ..STP200N4F3
STP200N6F3 ..STP6N50
STV5NA80 ..TK11A45D
TK11A50D ..TPC6102
TPC6103 ..TPCA8108
TPCA8109 ..UT30P04
UT3310 ..ZDM4306N
ZDS020N60 ..ZXMP7A17G
IRF644 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.

IRF644 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF644

Type of IRF644 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 125

Maximum drain-source voltage |Uds|, V: 250

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 14

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF644 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.28

Package: TO220AB

Equivalent transistors for IRF644

IRF644 PDF doc:

1.1. irf644b_irfs644b.pdf Size:900K _fairchild_semi

November 2001 IRF644B/IRFS644B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 14A, 250V, RDS(on) = 0.28? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 47 nC) planar, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter IRF644B IRFS644B Units VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25°C) 14 14 * A - Continuous (TC = 100°C) 8.9 8.9

1.2. irf644s.pdf Size:219K _international_rectifier


1.3. irf644spbf.pdf Size:2262K _international_rectifier

PD - 95116 IRF644SPbF • Lead-Free 3/16/04 Document Number: 91040 1 IRF644SPbF Document Number: 91040 2 IRF644SPbF Document Number: 91040 3 IRF644SPbF Document Number: 91040 4 IRF644SPbF Document Number: 91040 5 IRF644SPbF Document Number: 91040 6 IRF644SPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) I I I I I I I I I I = I OR I I I I = I I = = I Document Number: 91040 7 IRF644SPbF D2Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 1.60 (.063) 4.10 (.161) 1.50 (.059) 0.368 (.0145) 3.90 (.153) 0.342 (.0135) FEED DIRECTION 11.60 (.457) 1.85 (.073) 1.65 (.065) 11.40 (.449) 24.30 (.957) 15.42 (.609) 23.90 (.941) 15.22 (.601) TRL 1.75 (.069) 10.90 (.429) 1.25 (.049) 4.72 (.136) 10.70

1.4. irf644n.pdf Size:291K _international_rectifier

PD - 94859 IRF644NPbF IRF644NS l Advanced Process Technology IRF644NL l Dynamic dv/dt Rating l 175°C Operating Temperature HEXFET® Power MOSFET l Fast Switching D l Fully Avalanche Rated VDSS = 250V l Ease of Paralleling l Simple Drive Requirements l Lead-Free (only the TO-220AB RDS(on) = 240m? version is currently available in a G lead-free configuration) Description ID = 14A S Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and TO-220AB

1.5. irf644_irf645.pdf Size:506K _international_rectifier


1.6. irf644.pdf Size:919K _international_rectifier

PD - 94871 IRF644PbF • Lead-Free 12/5/03 Document Number: 91039 1 IRF644PbF Document Number: 91039 2 IRF644PbF Document Number: 91039 3 IRF644PbF Document Number: 91039 4 IRF644PbF Document Number: 91039 5 IRF644PbF Document Number: 91039 6 IRF644PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) 1.32 (.052) - A - 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK MIN 1 - GATE 1 2 3 2 - DRAIN 1- GATE 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045)

1.7. irf644a.pdf Size:935K _samsung

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.28 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 250V Lower RDS(ON) : 0.214 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 250 Continuous Drain Current (TC=25 o ) C 14 ID A o C Continuous Drain Current (TC=100 ) 8.9 IDM Drain Current-Pulsed A 1 56 O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 490 O IAR Avalanche Current 14 A 1 O EAR Repetitive Avalanche Energy 1 13.9 mJ O dv/dt Peak Diode Recovery dv/dt 3 4.8 V/ns O Total Power Dissipation (TC=25 oC ) 139 W PD Linear Derating Factor W/ o 1.11 C Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 Purpo

1.8. irf644_sihf644.pdf Size:202K _vishay

IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 250 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.28 RoHS* • Fast Switching Qg (Max.) (nC) 68 COMPLIANT • Ease of Paralleling Qgs (nC) 11 Qgd (nC) 35 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation S D levels to approximately 50 W. The low thermal resistance G S and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF644PbF Lead (Pb)-free SiHF644-E3 IRF644 SnPb SiHF644 ABSOLUTE MA

1.9. irf644s_sihf644s.pdf Size:167K _vishay

IRF644S, SiHF644S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 • Surface Mount RDS(on) (?)VGS = 10 V 0.28 • Available in Tape and Reel Qg (Max.) (nC) 68 • Dynamic dV/dt Rating Qgs (nC) 11 • Repetitive Avalanche Rated • Fast Switching Qgd (nC) 35 • Ease of Paralleling Configuration Single • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION D2PAK (TO-263) Third generation Power MOSFETs from Vishay provide the K designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The D2PAK is a surface mount power package capable of S D accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible G S on-resistance in any existing surface mount package. The N-Channel MOSFET D2PAK is suitable for high current applications because of its low internal con

See also transistors datasheet: IRF640 , IRF640A , IRF640FI , IRF640L , IRF640S , IRF641 , IRF642 , IRF643 , J113 , IRF644A , IRF644S , IRF645 , IRF646 , IRF650A , IRF654A , IRF710 , IRF710A .


 IRF644 Datasheet  IRF644 Datenblatt  IRF644 RoHS  IRF644 Distributor
 IRF644 Application Notes  IRF644 Component  IRF644 Circuit  IRF644 Schematic
 IRF644 Equivalent  IRF644 Cross Reference  IRF644 Data Sheet  IRF644 Fiche Technique

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