MOSFET Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF644
  IRF644
  IRF644
  IRF644
 
IRF644
  IRF644
  IRF644
  IRF644
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553L
2SJ553S ..2SK1516
2SK1517 ..2SK2136
2SK2137 ..2SK2735
2SK2735L ..2SK3125
2SK3126 ..2SK357
2SK3582CT ..2SK4195LS
2SK4196LS ..3N159
3N161 ..40821
40822 ..AO4496
AO4498 ..AOC2423
AOC2800 ..AON2701
AON2705 ..AON7752
AON7754 ..AOU4N60
AOU4S60 ..AP13P15GP-HF
AP13P15GS-HF ..AP30T10GP-HF
AP30T10GS-HF ..AP4800AGM-HF
AP4800BGM-HF ..AP9408AGH
AP9408AGI ..AP9930AGM
AP9930GM-HF ..APT1004RGN
APT1004RKN ..APT50M50L2LL
APT50M50PVR ..AUIRF3710ZS
AUIRF3805 ..AUIRLR3915
AUIRLS3034 ..BLF202
BLF2043F ..BSB028N06NN3G
BSB053N03LPG ..BSS123
BSS123A ..BUK653R7-30C
BUK654R0-75C ..BUK9217-75B
BUK9219-55A ..BUZ50A-TO220M
BUZ50ASM ..CED20P10
CED21A2 ..CEP02N7G
CEP02N9 ..CPH3355
CPH3356 ..DMP210DUDJ
DMP210DUFB4 ..FCP9N60N
FCPF11N60 ..FDC642P_F085
FDC645N ..FDM3622
FDM47-06KC5 ..FDMS7608S
FDMS7620S ..FDP8860
FDP8870 ..FDS8926A
FDS8928A ..FQB1P50
FQB22P10 ..FQPF3N25
FQPF3N80C ..FRS240R
FRS244D ..H5N2008P
H5N2301PF ..HAT2080R
HAT2080T ..HUF75332S3S
HUF75333G3 ..IPB022N04LG
IPB023N04NG ..IPD14N06S2-80
IPD15N06S2L-64 ..IPI80N04S3-06
IPI80N04S3-H4 ..IPP90R1K0C3
IPP90R1K2C3 ..IRF2807
IRF2807L ..IRF644
IRF644A ..IRF7450
IRF7451 ..IRF9533
IRF9540 ..IRFH3702
IRFH3707 ..IRFP140
IRFP1405 ..IRFR3411
IRFR3504Z ..IRFS750A
IRFS820 ..IRFW520A
IRFW530A ..IRL8113
IRL8113L ..IRLU3715Z
IRLU3717 ..IXFH160N15T2
IXFH16N120P ..IXFK64N50P
IXFK64N50Q3 ..IXFP7N80PM
IXFP8N50PM ..IXFV74N20P
IXFV74N20PS ..IXTA32P05T
IXTA32P20T ..IXTH40N50L2
IXTH41N25 ..IXTP1R4N100P
IXTP1R4N120P ..IXTT140N10P
IXTT16N10D2 ..JCS12N60FT
JFTJ105 ..KMB6D6N30Q
KMB7D0DN40Q ..KU310N10D
KU310N10P ..MTB35N06ZL
MTB3D0N03ATH8 ..MTN2510J3
MTN2510LE3 ..MTP5614N6
MTP6405N6 ..NTD18N06L
NTD20N03L27 ..NTR4171P
NTR4501 ..PHT4NQ10T
PHT6N03LT ..PSMN1R2-25YLC
PSMN1R2-30YLC ..RF1S50N06SM
RF1S530SM ..RJK03E4DPA
RJK03E5DPA ..RQJ0602EGDQA
RQJ0602EGDQS ..SDF07N80
SDF08N50 ..SFP9Z24
SFP9Z34 ..SMG2306A
SMG2306N ..SML40H28
SML40J53 ..SPA07N65C3
SPA08N50C3 ..SSD9971
SSD9973 ..SSM3J16FU
SSM3J16FV ..SSM6N7002BFU
SSM6N7002FU ..STB18NM80
STB190NF04 ..STD38NH02L
STD3LN62K3 ..STF24NM65N
STF25NM60ND ..STK830D
STK830F ..STP14NF12
STP14NF12FP ..STP5N30FI
STP5N30L ..STS4DNF30L
STS4DNF60L ..STU610S
STU612D ..TF218
TF252 ..TK80E06K3A
TK80F08K3 ..TPCA8042
TPCA8045-H ..UMBF170
UML2502 ..WTC1333
WTC2301 ..ZXMN7A11G
ZXMN7A11K ..ZXMS6006SG
 
IRF644 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF644 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF644

Type of IRF644 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 125

Maximum drain-source voltage |Uds|, V: 250

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 14

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF644 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.28

Package: TO220AB

Equivalent transistors for IRF644 - Cross-Reference Search

IRF644 PDF doc:

1.1. irf644b.pdf Size:644K _fairchild_semi

IRF644
IRF644
December 2013 IRF644B N-Channel BFET MOSFET 250 V, 14 A, 280 mΩ Description Features These N-Channel enhancement mode power field effect • 14 A, 250 V, RDS(on) = 280 mΩ @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge (Typ. 47 nC) planar, DMOS technology. This advanced technology has • Low Crss (Typ. 30 pF) been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand • Fast Switching high energy pulse in the avalanche and commutation • 100% Avalanche Tested mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power • Improved dv/dt Capability supplies. D G G DS TO-220 S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter IRF644B_FP001 Unit VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25°C) 14 A - Continuous (TC = 100°C) 8.9 A IDM (Note 1) 56 A Drain C

1.2. irf644b_irfs644b.pdf Size:900K _fairchild_semi

IRF644
IRF644
November 2001 IRF644B/IRFS644B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 14A, 250V, RDS(on) = 0.28? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 47 nC) planar, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter IRF644B IRFS644B Units VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25C) 14 14 * A - Continuous (TC = 100C) 8.9 8.9

1.3. irf644s.pdf Size:219K _international_rectifier

IRF644
IRF644

1.4. irf644spbf.pdf Size:2262K _international_rectifier

IRF644
IRF644
PD - 95116 IRF644SPbF Lead-Free 3/16/04 Document Number: 91040 www.vishay.com 1 IRF644SPbF Document Number: 91040 www.vishay.com 2 IRF644SPbF Document Number: 91040 www.vishay.com 3 IRF644SPbF Document Number: 91040 www.vishay.com 4 IRF644SPbF Document Number: 91040 www.vishay.com 5 IRF644SPbF Document Number: 91040 www.vishay.com 6 IRF644SPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) I I I I I I I I I I = I OR I I I I = I I = = I Document Number: 91040 www.vishay.com 7 IRF644SPbF D2Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 1.60 (.063) 4.10 (.161) 1.50 (.059) 0.368 (.0145) 3.90 (.153) 0.342 (.0135) FEED DIRECTION 11.60 (.457) 1.85 (.073) 1.65 (.065) 11.40 (.449) 24.30 (.957) 15.42 (.609) 23.90 (.941) 15.22 (.601) TRL 1.75 (.069) 10.90 (.429) 1.25 (.049) 4.72 (.136) 10.70

1.5. irf644n.pdf Size:291K _international_rectifier

IRF644
IRF644
PD - 94859 IRF644NPbF IRF644NS l Advanced Process Technology IRF644NL l Dynamic dv/dt Rating l 175C Operating Temperature HEXFET Power MOSFET l Fast Switching D l Fully Avalanche Rated VDSS = 250V l Ease of Paralleling l Simple Drive Requirements l Lead-Free (only the TO-220AB RDS(on) = 240m? version is currently available in a G lead-free configuration) Description ID = 14A S Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and TO-220AB

1.6. irf644_irf645.pdf Size:506K _international_rectifier

IRF644
IRF644


1.7. irf644.pdf Size:919K _international_rectifier

IRF644
IRF644
PD - 94871 IRF644PbF Lead-Free 12/5/03 Document Number: 91039 www.vishay.com 1 IRF644PbF Document Number: 91039 www.vishay.com 2 IRF644PbF Document Number: 91039 www.vishay.com 3 IRF644PbF Document Number: 91039 www.vishay.com 4 IRF644PbF Document Number: 91039 www.vishay.com 5 IRF644PbF Document Number: 91039 www.vishay.com 6 IRF644PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) 1.32 (.052) - A - 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK MIN 1 - GATE 1 2 3 2 - DRAIN 1- GATE 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045)

1.8. irf644a.pdf Size:935K _samsung

IRF644
IRF644
Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.28 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Lower RDS(ON) : 0.214 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 250 Continuous Drain Current (TC=25 o ) C 14 ID A o C Continuous Drain Current (TC=100 ) 8.9 IDM Drain Current-Pulsed A 1 56 O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 490 O IAR Avalanche Current 14 A 1 O EAR Repetitive Avalanche Energy 1 13.9 mJ O dv/dt Peak Diode Recovery dv/dt 3 4.8 V/ns O Total Power Dissipation (TC=25 oC ) 139 W PD Linear Derating Factor W/ o 1.11 C Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 Purpo

1.9. irf644_sihf644.pdf Size:202K _vishay

IRF644
IRF644
IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.28 RoHS* Fast Switching Qg (Max.) (nC) 68 COMPLIANT Ease of Paralleling Qgs (nC) 11 Qgd (nC) 35 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation S D levels to approximately 50 W. The low thermal resistance G S and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF644PbF Lead (Pb)-free SiHF644-E3 IRF644 SnPb SiHF644 ABSOLUTE MA

1.10. irf644s_sihf644s.pdf Size:167K _vishay

IRF644
IRF644
IRF644S, SiHF644S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 Surface Mount RDS(on) (?)VGS = 10 V 0.28 Available in Tape and Reel Qg (Max.) (nC) 68 Dynamic dV/dt Rating Qgs (nC) 11 Repetitive Avalanche Rated Fast Switching Qgd (nC) 35 Ease of Paralleling Configuration Single Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC D DESCRIPTION D2PAK (TO-263) Third generation Power MOSFETs from Vishay provide the K designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The D2PAK is a surface mount power package capable of S D accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible G S on-resistance in any existing surface mount package. The N-Channel MOSFET D2PAK is suitable for high current applications because of its low internal con

See also transistors datasheet: IRF640 , IRF640A , IRF640FI , IRF640L , IRF640S , IRF641 , IRF642 , IRF643 , J113 , IRF644A , IRF644S , IRF645 , IRF646 , IRF650A , IRF654A , IRF710 , IRF710A .

Keywords

 IRF644 Datasheet  IRF644 Datenblatt  IRF644 RoHS  IRF644 Distributor
 IRF644 Application Notes  IRF644 Component  IRF644 Circuit  IRF644 Schematic
 IRF644 Equivalent  IRF644 Cross Reference  IRF644 Data Sheet  IRF644 Fiche Technique

 

(C) 2005 All Right reserved Bipolar || MOSFET || IGBT | | Manufacturer Sites || SMD Code || Packages