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IRF644 MOSFET (IC) Datasheet. Cross Reference Search. IRF644 Equivalent

Type Designator: IRF644

Type of IRF644 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 125

Maximum drain-source voltage |Uds|, V: 250

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 14

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF644 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.28

Package: TO220AB

IRF644 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF644 PDF doc:

1.1. irf644b_irfs644b.pdf Size:900K _fairchild_semi

IRF644
IRF644

November 2001 IRF644B/IRFS644B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 14A, 250V, RDS(on) = 0.28? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 47 nC) planar, DMOS technology. • Low Crss ( typical 30 pF) This advanced technology has been especially tailored to • Fast switchin

1.2. irf644b.pdf Size:644K _fairchild_semi

IRF644
IRF644

December 2013 IRF644B N-Channel BFET MOSFET 250 V, 14 A, 280 mΩ Description Features These N-Channel enhancement mode power field effect • 14 A, 250 V, RDS(on) = 280 mΩ @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge (Typ. 47 nC) planar, DMOS technology. This advanced technology has • Low Crss (Typ. 30 pF) been especially tailored to mi

1.3. irf644.pdf Size:919K _international_rectifier

IRF644
IRF644

PD - 94871 IRF644PbF • Lead-Free 12/5/03 Document Number: 91039 www.vishay.com 1 IRF644PbF Document Number: 91039 www.vishay.com 2 IRF644PbF Document Number: 91039 www.vishay.com 3 IRF644PbF Document Number: 91039 www.vishay.com 4 IRF644PbF Document Number: 91039 www.vishay.com 5 IRF644PbF Document Number: 91039 www.vishay.com 6 IRF644PbF TO-220AB Package Outline Dimen

1.4. irf644spbf.pdf Size:2262K _international_rectifier

IRF644
IRF644

PD - 95116 IRF644SPbF • Lead-Free 3/16/04 Document Number: 91040 www.vishay.com 1 IRF644SPbF Document Number: 91040 www.vishay.com 2 IRF644SPbF Document Number: 91040 www.vishay.com 3 IRF644SPbF Document Number: 91040 www.vishay.com 4 IRF644SPbF Document Number: 91040 www.vishay.com 5 IRF644SPbF Document Number: 91040 www.vishay.com 6 IRF644SPbF D2Pak Package Outline D

1.5. irf644n.pdf Size:291K _international_rectifier

IRF644
IRF644

PD - 94859 IRF644NPbF IRF644NS l Advanced Process Technology IRF644NL l Dynamic dv/dt Rating l 175°C Operating Temperature HEXFET® Power MOSFET l Fast Switching D l Fully Avalanche Rated VDSS = 250V l Ease of Paralleling l Simple Drive Requirements l Lead-Free (only the TO-220AB RDS(on) = 240m? version is currently available in a G lead-free configuration) Description ID = 14A S

1.6. irf644s.pdf Size:219K _international_rectifier

IRF644
IRF644

1.7. irf644_irf645.pdf Size:506K _international_rectifier

IRF644
IRF644



1.8. irf644a.pdf Size:935K _samsung

IRF644
IRF644

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.28 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 250V Lower RDS(ON) : 0.214 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Unit

1.9. irf644s_sihf644s.pdf Size:167K _vishay

IRF644
IRF644

IRF644S, SiHF644S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 • Surface Mount RDS(on) (?)VGS = 10 V 0.28 • Available in Tape and Reel Qg (Max.) (nC) 68 • Dynamic dV/dt Rating Qgs (nC) 11 • Repetitive Avalanche Rated • Fast Switching Qgd (nC) 35 • Ease of Paralleling Configuration Single • Simple Drive

1.10. irf644_sihf644.pdf Size:202K _vishay

IRF644
IRF644

IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 250 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.28 RoHS* • Fast Switching Qg (Max.) (nC) 68 COMPLIANT • Ease of Paralleling Qgs (nC) 11 Qgd (nC) 35 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220A

See also transistors datasheet: IRF640 , IRF640A , IRF640FI , IRF640L , IRF640S , IRF641 , IRF642 , IRF643 , J113 , IRF644A , IRF644S , IRF645 , IRF646 , IRF650A , IRF654A , IRF710 , IRF710A .

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