MOSFET Datasheet



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IRF644
  IRF644
  IRF644
 
IRF644
  IRF644
  IRF644
 
IRF644
  IRF644
 
 
List
03N06 ..2N5198
2N5199 ..2N6798SM
2N6799 ..2N7272R1
2N7272R2 ..2SJ378
2SJ380 ..2SK1094
2SK1095 ..2SK1460LS
2SK1461 ..2SK1891
2SK1895 ..2SK2341
2SK2342 ..2SK2709
2SK2710 ..2SK3070
2SK3070L ..2SK3472
2SK3473 ..2SK4019
2SK4020 ..2SK904
2SK905 ..3SK181-5
3SK181-6 ..7N60A
7N60F ..AO4854
AO4862 ..AOD421
AOD422 ..AON6404
AON6404A ..AOT2608L
AOT260L ..AOWF4S60
AOWF7S65 ..AP20N15GH-HF
AP20N15GI-HF ..AP40T03GP
AP40T03GS ..AP60T03GP
AP60T03GS ..AP9466GS
AP9467AGH-HF ..AP9971GJ
AP9971GM-HF ..APM9428K
APM9430 ..APT20M42HVR
APT20M42HVR ..APT8018L2VFR
APT8018L2VR ..AUIRFR3504Z
AUIRFR3607 ..BF904AWR
BF904R ..BLF7G15LS-200
BLF7G15LS-300P ..BSB053N03LPG
BSC010NE2LS ..BSS123
BSS123A ..BUK653R7-30C
BUK654R0-75C ..BUK9217-75B
BUK9219-55A ..BUZ50A-TO220M
BUZ50ASM ..CED20P10
CED21A2 ..CEP02N7G
CEP02N9 ..CPH3350
CPH3351 ..DMN66D0LW
DMP2004DMK ..FCP11N60N
FCP130N60 ..FDC6305N
FDC6306P ..FDH038AN08A1
FDH047AN08A0 ..FDMS3664S
FDMS3668S ..FDP5N50NZ
FDP5N60NZ ..FDS86140
FDS86141 ..FQA62N25C
FQA65N20 ..FQPF13N06L
FQPF13N50C ..FRM9140R
FRM9230D ..FTD04N65C
FTD06N70C ..H5N5004PL
H5N5005PL ..HAT2160H
HAT2160N ..HUF75637S3S
HUF75639G3 ..IPB05CN10NG
IPB065N03LG ..IPD33CN10NG
IPD350N06LG ..IPP024N06N3G
IPP028N08N3G ..IPW50R350CP
IPW50R399CP ..IRF3415S
IRF350 ..IRF6633
IRF6633A ..IRF7507(P)
IRF7509 ..IRF9952
IRF9952Q ..IRFH5304
IRFH5306 ..IRFP241
IRFP242 ..IRFR540Z
IRFR5410 ..IRFS9232
IRFS9233 ..IRFY120
IRFY120C ..IRLHM630
IRLHS2242 ..IRLWZ34A
IRLWZ44A ..IXFH24N50
IXFH24N50Q ..IXFL32N120P
IXFL34N100 ..IXFR180N15P
IXFR18N90P ..IXFX20N120
IXFX20N120P ..IXTA60N10T
IXTA60N20T ..IXTH60N20L2
IXTH60N25 ..IXTP2N60P
IXTP2N80 ..IXTT50P085
IXTT50P10 ..KF1N60I
KF1N60L ..KML0D3P20V
KML0D4N20TV ..LS4119
MBNP2026G6 ..MTB25P06FP
MTB2P50E ..MTN2310M3
MTN2310N3 ..MTP452M3
MTP4835AQ8 ..NTB5426N
NTB5605P ..NTP6412AN
NTP6413AN ..P0903BV
P0903BVA ..P5010AT
P5010AV ..PHB50N03LT
PHB50N06LT ..PMGD280UN
PMGD290XN ..PSMN5R8-40YS
PSMN5R9-30YL ..RFD14N06L
RFD14N06LSM ..RJK0652DPB
RJK0653DPB ..RQM2201DNS
RRF015P03 ..SDF120JAB-S
SDF120JAB-U ..SFS9610
SFS9614 ..SMG2305PE
SMG2306A ..SML40H22
SML40H28 ..SPA07N60CFD
SPA07N65C3 ..SSD70N04-06D
SSD9435 ..SSF5508A
SSF5508U ..SSG6680
SSG9435 ..SSM3K44MFV
SSM3K48FU ..SSPS7321P
SSPS7330N ..STB55NF03L
STB55NF06 ..STD5NK52ZD
STD5NK60Z ..STFI10NK60Z
STFI13NK60Z ..STLT30
STM101N ..STP20NF06
STP20NF06L ..STP6N52K3
STP6N60FI ..STT2605
STT3402N ..STV60N06
STV6NA60 ..TK12E60U
TK12J55D ..TPC8003
TPC8004 ..TPCC8001-H
TPCC8002-H ..UT3443
UT3458 ..ZVN0540A
ZVN0545A ..ZXMS6004DG
ZXMS6004DT8 ..ZXMS6006SG
 
IRF644 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF644 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF644

Type of IRF644 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 125

Maximum drain-source voltage |Uds|, V: 250

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 14

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF644 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.28

Package: TO220AB

Equivalent transistors for IRF644 - Cross-Reference Search

IRF644 PDF doc:

1.1. irf644b_irfs644b.pdf Size:900K _fairchild_semi

IRF644
IRF644
November 2001 IRF644B/IRFS644B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 14A, 250V, RDS(on) = 0.28? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 47 nC) planar, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter IRF644B IRFS644B Units VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25C) 14 14 * A - Continuous (TC = 100C) 8.9 8.9

1.2. irf644b.pdf Size:644K _fairchild_semi

IRF644
IRF644
December 2013 IRF644B N-Channel BFET MOSFET 250 V, 14 A, 280 mΩ Description Features These N-Channel enhancement mode power field effect • 14 A, 250 V, RDS(on) = 280 mΩ @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge (Typ. 47 nC) planar, DMOS technology. This advanced technology has • Low Crss (Typ. 30 pF) been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand • Fast Switching high energy pulse in the avalanche and commutation • 100% Avalanche Tested mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power • Improved dv/dt Capability supplies. D G G DS TO-220 S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter IRF644B_FP001 Unit VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25°C) 14 A - Continuous (TC = 100°C) 8.9 A IDM (Note 1) 56 A Drain C

1.3. irf644.pdf Size:919K _international_rectifier

IRF644
IRF644
PD - 94871 IRF644PbF Lead-Free 12/5/03 Document Number: 91039 www.vishay.com 1 IRF644PbF Document Number: 91039 www.vishay.com 2 IRF644PbF Document Number: 91039 www.vishay.com 3 IRF644PbF Document Number: 91039 www.vishay.com 4 IRF644PbF Document Number: 91039 www.vishay.com 5 IRF644PbF Document Number: 91039 www.vishay.com 6 IRF644PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) 1.32 (.052) - A - 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK MIN 1 - GATE 1 2 3 2 - DRAIN 1- GATE 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045)

1.4. irf644spbf.pdf Size:2262K _international_rectifier

IRF644
IRF644
PD - 95116 IRF644SPbF Lead-Free 3/16/04 Document Number: 91040 www.vishay.com 1 IRF644SPbF Document Number: 91040 www.vishay.com 2 IRF644SPbF Document Number: 91040 www.vishay.com 3 IRF644SPbF Document Number: 91040 www.vishay.com 4 IRF644SPbF Document Number: 91040 www.vishay.com 5 IRF644SPbF Document Number: 91040 www.vishay.com 6 IRF644SPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) I I I I I I I I I I = I OR I I I I = I I = = I Document Number: 91040 www.vishay.com 7 IRF644SPbF D2Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 1.60 (.063) 4.10 (.161) 1.50 (.059) 0.368 (.0145) 3.90 (.153) 0.342 (.0135) FEED DIRECTION 11.60 (.457) 1.85 (.073) 1.65 (.065) 11.40 (.449) 24.30 (.957) 15.42 (.609) 23.90 (.941) 15.22 (.601) TRL 1.75 (.069) 10.90 (.429) 1.25 (.049) 4.72 (.136) 10.70

1.5. irf644n.pdf Size:291K _international_rectifier

IRF644
IRF644
PD - 94859 IRF644NPbF IRF644NS l Advanced Process Technology IRF644NL l Dynamic dv/dt Rating l 175C Operating Temperature HEXFET Power MOSFET l Fast Switching D l Fully Avalanche Rated VDSS = 250V l Ease of Paralleling l Simple Drive Requirements l Lead-Free (only the TO-220AB RDS(on) = 240m? version is currently available in a G lead-free configuration) Description ID = 14A S Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and TO-220AB

1.6. irf644s.pdf Size:219K _international_rectifier

IRF644
IRF644

1.7. irf644_irf645.pdf Size:506K _international_rectifier

IRF644
IRF644


1.8. irf644a.pdf Size:935K _samsung

IRF644
IRF644
Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.28 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Lower RDS(ON) : 0.214 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 250 Continuous Drain Current (TC=25 o ) C 14 ID A o C Continuous Drain Current (TC=100 ) 8.9 IDM Drain Current-Pulsed A 1 56 O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 490 O IAR Avalanche Current 14 A 1 O EAR Repetitive Avalanche Energy 1 13.9 mJ O dv/dt Peak Diode Recovery dv/dt 3 4.8 V/ns O Total Power Dissipation (TC=25 oC ) 139 W PD Linear Derating Factor W/ o 1.11 C Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 Purpo

1.9. irf644s_sihf644s.pdf Size:167K _vishay

IRF644
IRF644
IRF644S, SiHF644S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 250 Surface Mount RDS(on) (?)VGS = 10 V 0.28 Available in Tape and Reel Qg (Max.) (nC) 68 Dynamic dV/dt Rating Qgs (nC) 11 Repetitive Avalanche Rated Fast Switching Qgd (nC) 35 Ease of Paralleling Configuration Single Simple Drive Requirements Compliant to RoHS Directive 2002/95/EC D DESCRIPTION D2PAK (TO-263) Third generation Power MOSFETs from Vishay provide the K designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The D2PAK is a surface mount power package capable of S D accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible G S on-resistance in any existing surface mount package. The N-Channel MOSFET D2PAK is suitable for high current applications because of its low internal con

1.10. irf644_sihf644.pdf Size:202K _vishay

IRF644
IRF644
IRF644, SiHF644 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 250 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.28 RoHS* Fast Switching Qg (Max.) (nC) 68 COMPLIANT Ease of Paralleling Qgs (nC) 11 Qgd (nC) 35 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation S D levels to approximately 50 W. The low thermal resistance G S and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF644PbF Lead (Pb)-free SiHF644-E3 IRF644 SnPb SiHF644 ABSOLUTE MA

See also transistors datasheet: IRF640 , IRF640A , IRF640FI , IRF640L , IRF640S , IRF641 , IRF642 , IRF643 , J113 , IRF644A , IRF644S , IRF645 , IRF646 , IRF650A , IRF654A , IRF710 , IRF710A .

Keywords

 IRF644 Datasheet  IRF644 Datenblatt  IRF644 RoHS  IRF644 Distributor
 IRF644 Application Notes  IRF644 Component  IRF644 Circuit  IRF644 Schematic
 IRF644 Equivalent  IRF644 Cross Reference  IRF644 Data Sheet  IRF644 Fiche Technique

 

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