IRF654A MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF654A

Type of IRF654A transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 156

Maximum drain-source voltage |Uds|, V: 250V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 21

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF654A transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 2300

Maximum drain-source on-state resistance (Rds), Ohm: 0.14

Package: TO220

Equivalent transistors for IRF654A

IRF654A PDF documents for downloads:

1.1. irf654a.pdf Size:938K _samsung

Advanced Power MOSFET FEATURES BVDSS = 250 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = 21 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 250V Low RDS(ON) : 0.108 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 250 Continuous Drain Current (TC=25 ) 21 ID A Continuous Drain Current (TC=100 ) 13.3 IDM Drain Current-Pulsed A 84 VGS Gate-to-Source Voltage 30 V EAS Single Pulsed Avalanche Energy mJ 551 IAR Avalanche Current 21 A EAR Repetitive Avalanche Energy 15.6 mJ dv/dt Peak Diode Recovery dv/dt V/ns 4.8 Total Power Dissipation (TC=25 ) 156 W PD Linear Derating Factor W/ 1.25 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8” from case for 5-seconds Thermal Resistance

4.1. irf654b.pdf Size:867K _fairchild_semi

November 2001 IRF654B/IRFS654B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 21A, 250V, RDS(on) = 0.14? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 95 nC) planar, DMOS technology. • Low Crss ( typical 60 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter IRF654B IRFS654B Units VDSS Drain-Source Voltage 250 V ID Drain Current - Continuous (TC = 25°C) 21 21 * A - Continuous (TC = 100°C) 13.3 13

5.1. irf650b.pdf Size:898K _fairchild_semi

IRF650B / IRFS650B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 28A, 200V, RDS(on) = 0.085? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 95 nC) planar, DMOS technology. • Low Crss ( typical 75 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter IRF650B IRFS650B Units VDSS Drain-Source Voltage 200 V ID Drain Current - Continuous (TC =

5.2. irf650a.pdf Size:775K _samsung

Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS(on) = 0.085 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 28 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 200V Low RDS(ON) : 0.071 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 200 o Continuous Drain Current (TC=25 ) C 28 ID A Continuous Drain Current (TC=100 oC ) 17.7 IDM Drain Current-Pulsed A 1 112 O _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 mJ 523 O IAR Avalanche Current 28 A 1 O EAR Repetitive Avalanche Energy 1 15.6 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 5.0 O Total Power Dissipation (TC=25 o C) 156 W PD o Linear Derating Factor C 1.25 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300

See also transistors datasheet: IRF642 , IRF643 , IRF644 , IRF644A , IRF644S , IRF645 , IRF646 , IRF650A , IRFP4227 , IRF710 , IRF710A , IRF710S , IRF711 , IRF712 , IRF713 , IRF720 , IRF7201 .

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