IRF710S MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF710S

Type of IRF710S transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 36

Maximum drain-source voltage |Uds|, V: 400V

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 2

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF710S transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 3.6

Package: D2PAK

Equivalent transistors for IRF710S

IRF710S PDF documents for downloads:

1.1. irf710s.pdf Size:168K _international_rectifier

1.2. irf710spbf.pdf Size:1710K _international_rectifier

PD- 95746 IRF710SPbF • Lead-Free 8/23/04 Document Number: 91042 www.vishay.com 1 IRF710SPbF Document Number: 91042 www.vishay.com 2 IRF710SPbF Document Number: 91042 www.vishay.com 3 IRF710SPbF Document Number: 91042 www.vishay.com 4 IRF710SPbF Document Number: 91042 www.vishay.com 5 IRF710SPbF Document Number: 91042 www.vishay.com 6 IRF710SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - + - + - • dv/dt controlled by RG + • ISD controlled by Duty Factor "D" - • D.U.T. - Device Under Test * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = Period P.W. VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curent ISD Ri

4.1. irf710b.pdf Size:859K _fairchild_semi

November 2001 IRF710B/IRFS710B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.0A, 400V, RDS(on) = 3.4? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 7.7 nC) planar, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter IRF710B IRFS710B Units VDSS Drain-Source Voltage 400 V ID Drain Current - Continuous (TC = 25°C) 2.0 2.0 * A - Continuou

4.2. irf7105.pdf Size:224K _international_rectifier

PD - 9.1097C IRF7105 HEXFET® Power MOSFET Advanced Process Technology N-CHANNEL MOSFET 1 8 N-Ch P-Ch S1 D1 Ultra Low On-Resistance 2 7 Dual N and P Channel Mosfet G1 D1 VDSS 25V -25V Surface Mount 3 6 S2 D2 Available in Tape & Reel 4 5 RDS(on) 0.10? 0.25? G2 D2 Dynamic dv/dt Rating P-CHANNEL MOSFET Fast Switching Top View ID 3.5A -2.3A Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and SO-8 multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devic

4.3. irf7103q.pdf Size:169K _international_rectifier

PD - 93944C IRF7103Q AUTOMOTIVE MOSFET Typical Applications Anti-lock Braking Systems (ABS) HEXFET® Power MOSFET Electronic Fuel Injection ?) ?) ?) ?) Power Doors, Windows & Seats VDSS RDS(on) max (m?) ID Benefits 50V 130@VGS = 10V 3.0A Advanced Process Technology 200@VGS = 4.5V 1.5A Dual N-Channel MOSFET Ultra Low On-Resistance 175°C Operating Temperature Repetitive Avalanche Allowed up to Tjmax Automotive [Q101] Qualified 1 8 S1 D1 Description 2 7 G1 D1 Specifically designed for Automotive applications, these 3 6 HEXFET® Power MOSFET's in a Dual SO-8 package utilize S2 D2 the lastest processing techniques to achieve extremely low 4 5 G2 D2 on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 175°C SO-8 Top View junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable d

4.4. irf7107.pdf Size:158K _international_rectifier

PD - 9.1099B IRF7107 PRELIMINARY HEXFET® Power MOSFET Advanced Process Technology N-CHANNEL MOSFET N-Ch P-Ch Ultra Low On-Resistance 1 8 S1 D1 Dual N and P Channel Mosfet 2 7 G1 D1 VDSS 20V -20V Surface Mount 3 6 Available in Tape & Reel S2 D2 RDS(on) 0.125? 0.160? Dynamic dv/dt Rating 4 5 G2 D2 Fast Switching P-CHANNEL MOSFET ID 3.0A -2.8A Top View Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices

4.5. irf7101.pdf Size:263K _international_rectifier

PD - 9.871B IRF7101 HEXFET® Power MOSFET Adavanced Process Technology 1 8 Ultra Low On-Resistance D1 S1 VDSS = 20V Dual N-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 RDS(on) = 0.10? Available in Tape & Reel 4 5 G2 D2 Dynamic dv/dt Rating ID = 3.5A Fast Switching Top View Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized SO-8 leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board spa

4.6. irf7103.pdf Size:169K _international_rectifier

PD - 9.1095B IRF7103 HEXFET® Power MOSFET Adavanced Process Technology 1 8 Ultra Low On-Resistance D1 S1 VDSS = 50V Dual N-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 RDS(on) = 0.130? Available in Tape & Reel 4 5 G2 D2 Dynamic dv/dt Rating ID = 3.0A Fast Switching Top View Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized SO-8 leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board s

4.7. irf710.pdf Size:165K _international_rectifier

4.8. irf7106.pdf Size:158K _international_rectifier

PD - 9.1098B IRF7106 PRELIMINARY HEXFET® Power MOSFET Advanced Process Technology N-CHANNEL MOSFET Ultra Low On-Resistance N-Ch P-Ch 1 8 S1 D1 Dual N and P Channel Mosfet 2 7 G1 D1 Surface Mount VDSS 20V -20V 3 6 Available in Tape & Reel S2 D2 Dynamic dv/dt Rating RDS(on) 0.125? 0.20? 4 5 G2 D2 Fast Switching P-CHANNEL MOSFET ID 3.0A -2.5A Top View Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which HEXFET Power MOSFETs are well known, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices ca

4.9. irf710pbf.pdf Size:223K _international_rectifier

PD - 95366 IRF710PbF • Lead-Free www.irf.com 1 6/10/04 Document Number: 91041 www.vishay.com 1 IRF710PbF Document Number: 91041 www.vishay.com 2 IRF710PbF Document Number: 91041 www.vishay.com 3 IRF710PbF Document Number: 91041 www.vishay.com 4 IRF710PbF Document Number: 91041 www.vishay.com 5 IRF710PbF Document Number: 91041 www.vishay.com 6 IRF710PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X

4.10. irf7104.pdf Size:158K _international_rectifier

PD - 9.1096B IRF7104 HEXFET® Power MOSFET Adavanced Process Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -20V Dual P-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 RDS(on) = 0.250? Available in Tape & Reel 4 5 G2 D2 Dynamic dv/dt Rating ID = -2.3A Fast Switching Top View Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized SO-8 leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

4.11. irf710a.pdf Size:209K _samsung

IRF710A Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology ? RDS(on) = 3.6 Rugged Gate Oxide Technology Lower Input Capacitance ID = 2 A Improved Gate Charge Extended Safe Operating Area TO-220 µ Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 2.815 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 400 ? C Continuous Drain Current (TC=25 ) 2 ID A ? Continuous Drain Current (TC=100 C ) 1.3 IDM Drain Current-Pulsed 1 O 6 A + VGS Gate-to-Source Voltage _ 30 V EAS Single Pulsed Avalanche Energy 2 114 mJ O IAR Avalanche Current 1 2 A O EAR Repetitive Avalanche Energy 1 mJ 3.6 O dv/dt Peak Diode Recovery dv/dt 3 4.0 V/ns O ? Total Power Dissipation (TC=25 C) W 36 PD ? Linear Derating Factor 0.29 W/ C Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range ? C Maximum Lead Temp. for Solderin

4.12. irf710_sihf710.pdf Size:203K _vishay

IRF710, SiHF710 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 400 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 3.6 RoHS* Qg (Max.) (nC) 17 • Fast Switching COMPLIANT Qgs (nC) 3.4 • Ease of Paralleling Qgd (nC) 8.5 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D TO-220AB DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. S The TO-220AB package is universally preferred for all D S G commercial-industrial applications at power dissipation N-Channel MOSFET levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF710PbF Lead (Pb)-free SiHF710-E3 IRF710 SnPb SiHF710 ABSOLUTE MA

See also transistors datasheet: IRF644A , IRF644S , IRF645 , IRF646 , IRF650A , IRF654A , IRF710 , IRF710A , IRFBC40 , IRF711 , IRF712 , IRF713 , IRF720 , IRF7201 , IRF7204 , IRF7205 , IRF7207 .

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