All MOSFET Datasheet

 

IRF720S MOSFET (IC) Datasheet. Cross Reference Search. IRF720S Equivalent

Type Designator: IRF720S

Type of IRF720S transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 50

Maximum drain-source voltage |Uds|, V: 400

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 3.3

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF720S transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 1.8

Package: D2PAK

IRF720S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF720S PDF doc:

1.1. irf720spbf.pdf Size:1163K _international_rectifier

IRF720S
IRF720S

PD - 95119 IRF720SPbF Lead-Free 3/17/04 Document Number: 91044 www.vishay.com 1 IRF720SPbF Document Number: 91044 www.vishay.com 2 IRF720SPbF Document Number: 91044 www.vishay.com 3 IRF720SPbF Document Number: 91044 www.vishay.com 4 IRF720SPbF Document Number: 91044 www.vishay.com 5 IRF720SPbF Document Number: 91044 www.vishay.com 6 IRF720SPbF D2Pak Package Outline D

1.2. irf720s.pdf Size:363K _international_rectifier

IRF720S
IRF720S

4.1. irf720-1-2-3-fi.pdf Size:476K _st2

IRF720S
IRF720S

4.2. irf720b.pdf Size:879K _fairchild_semi

IRF720S
IRF720S

November 2001 IRF720B/IRFS720B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.3A, 400V, RDS(on) = 1.75? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC) planar, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailored to Fast switchi

4.3. irf7204.pdf Size:145K _international_rectifier

IRF720S
IRF720S

PD - 9.1103B IRF7204 HEXFET Power MOSFET Adavanced Process Technology A 1 8 S D Ultra Low On-Resistance VDSS = -20V 2 7 P-Channel MOSFET S D Surface Mount 3 6 S D RDS(on) = 0.060? Available in Tape & Reel 4 5 G D Dynamic dv/dt Rating ID = -5.3A Fast Switching Top View Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing te

4.4. irf7205.pdf Size:166K _international_rectifier

IRF720S
IRF720S

PD - 9.1104B IRF7205 HEXFET Power MOSFET Adavanced Process Technology A 1 8 S D Ultra Low On-Resistance VDSS = -30V 2 7 P-Channel MOSFET S D Surface Mount 3 6 S D RDS(on) = 0.070? Available in Tape & Reel 4 5 G D Dynamic dv/dt Rating ID = -4.6A Fast Switching T op View Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing te

4.5. irf7201.pdf Size:182K _international_rectifier

IRF720S
IRF720S

PD - 91100C PRELIMINARY IRF7201 HEXFET Power MOSFET Generation V Technology A A 1 8 S D Ultra Low On-Resistance VDSS = 30V 2 7 N-Channel MOSFET S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D Dynamic dv/dt Rating RDS(on) = 0.030W Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

4.6. irf7207.pdf Size:89K _international_rectifier

IRF720S
IRF720S

PD - 91879A IRF7207 HEXFET Power MOSFET Generation 5 Technology A 1 8 S D P-Channel Mosfet VDSS = -20V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D Dynamic dv/dt Rating 4 5 G D Fast Switching RDS(on) = 0.06? Top View Description Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely lo

4.7. irf720.pdf Size:894K _international_rectifier

IRF720S
IRF720S

PD - 94844 IRF720PbF Lead-Free 11/14/03 Document Number: 91043 www.vishay.com 1 IRF720PbF Document Number: 91043 www.vishay.com 2 IRF720PbF Document Number: 91043 www.vishay.com 3 IRF720PbF Document Number: 91043 www.vishay.com 4 IRF720PbF Document Number: 91043 www.vishay.com 5 IRF720PbF Document Number: 91043 www.vishay.com 6 IRF720PbF TO-220AB Package Outline Dime

4.8. irf720a.pdf Size:926K _samsung

IRF720S
IRF720S

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 1.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V ? Lower RDS(ON) : 1.408 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

4.9. irf720_sihf720.pdf Size:201K _vishay

IRF720S
IRF720S

IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 V Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 1.8 RoHS* Fast Switching Qg (Max.) (nC) 20 COMPLIANT Ease of Paralleling Qgs (nC) 3.3 Qgd (nC) 11 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Thi

4.10. irf7205.pdf Size:1894K _kexin

IRF720S
IRF720S

SMD Type MOSFET P-Channel MOSFET IRF7205 (KRF7205) SOP-8 ■ Features ● VDS (V) =-30V ● ID =-4.6 A (VGS =-10V) 1.50 0.15 ● RDS(ON) < 70mΩ (VGS =-10V) ● RDS(ON) < 130mΩ (VGS =-4.5V) 1 Source 5 Drain ● Fast Switching 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate A 1 8 S D 2 7 S D 3 6 S D 4 5 G D ■ Absolute Maximum Ratings Ta = 25℃ Parameter

See also transistors datasheet: IRF713 , IRF720 , IRF7201 , IRF7204 , IRF7205 , IRF7207 , IRF720A , IRF720FI , IRF630A , IRF721 , IRF722 , IRF7220 , IRF723 , IRF7233 , IRF730 , IRF730A , IRF730AL .

Search Terms:

 IRF720S - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


IRF720S
  IRF720S
  IRF720S
  IRF720S
 
IRF720S
  IRF720S
  IRF720S
  IRF720S
 

social 

LIST

Last Update

MOSFET: RFP2N18L | RFL1P10 | RFL1P08 | RFL2N06L | RFL2N06 | RFL2N05L | RFL2N05 | RFL1N20L | RFL1N20 | RFL1N18L | RFL1N18 | RFL1N10 | RFL1N08 | SM7308CSKP | SM6043CSQ |

Enter a full or partial SMD code with a minimum of 2 letters or numbers