IRF722 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF722

Type of IRF722 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 50

Maximum drain-source voltage |Uds|, V: 400V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 2.8

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF722 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 2.5

Package: TO220

Equivalent transistors for IRF722

IRF722 PDF documents for downloads:

1.1. irf7220.pdf Size:81K _international_rectifier

PD- 91850C IRF7220 HEXFET® Power MOSFET Ultra Low On-Resistance A 1 8 S D P-Channel MOSFET VDSS = -14V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D 4 5 G D RDS(on) = 0.012? Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced SO-8 board space. The package is designed for vapor phase, infrared, or wave soldering techniques. Absolute Maximum Ratings Parameter Max. Units VDS Drain- Source Voltage -14 V ID @ TA = 25°C Continuous Drai

5.1. irf720b.pdf Size:879K _fairchild_semi

November 2001 IRF720B/IRFS720B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 3.3A, 400V, RDS(on) = 1.75? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 14 nC) planar, DMOS technology. • Low Crss ( typical 11 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter IRF720B IRFS720B Units VDSS Drain-Source Voltage 400 V ID Drain Current - Continuous (TC = 25°C) 3.3 3.3 * A - Continuous

5.2. irf7210.pdf Size:78K _international_rectifier

PD- 91844A IRF7210 HEXFET® Power MOSFET Ultra Low On-Resistance A 1 8 S D P-Channel MOSFET VDSS = -12V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D 4 5 G D RDS(on) = 0.007? Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced SO-8 board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Absolute Maximum Ratings Parameter Max. Units VDS Drain- Source Voltage -12 V ID @ TA = 25°C Continuous Dra

5.3. irf7233.pdf Size:92K _international_rectifier

PD- 91849D IRF7233 HEXFET® Power MOSFET Ultra Low On-Resistance A 1 8 S D P-Channel MOSFET VDSS = -12V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D 4 5 G D RDS(on) = 0.020? Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced SO-8 board space. The package is designed for vapor phase, infrared, or wave soldering techniques. Absolute Maximum Ratings Parameter Max. Units VDS Drain- Source Voltage -12 V ID @ TA = 25°C Continuous Drain Cu

5.4. irf720.pdf Size:894K _international_rectifier

PD - 94844 IRF720PbF • Lead-Free 11/14/03 Document Number: 91043 www.vishay.com 1 IRF720PbF Document Number: 91043 www.vishay.com 2 IRF720PbF Document Number: 91043 www.vishay.com 3 IRF720PbF Document Number: 91043 www.vishay.com 4 IRF720PbF Document Number: 91043 www.vishay.com 5 IRF720PbF Document Number: 91043 www.vishay.com 6 IRF720PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045)

5.5. irf720s.pdf Size:363K _international_rectifier

5.6. irf7204.pdf Size:145K _international_rectifier

PD - 9.1103B IRF7204 HEXFET® Power MOSFET Adavanced Process Technology A 1 8 S D Ultra Low On-Resistance VDSS = -20V 2 7 P-Channel MOSFET S D Surface Mount 3 6 S D RDS(on) = 0.060? Available in Tape & Reel 4 5 G D Dynamic dv/dt Rating ID = -5.3A Fast Switching Top View Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized SO-8 leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.

5.7. irf7207.pdf Size:89K _international_rectifier

PD - 91879A IRF7207 HEXFET® Power MOSFET Generation 5 Technology A 1 8 S D P-Channel Mosfet VDSS = -20V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D Dynamic dv/dt Rating 4 5 G D Fast Switching RDS(on) = 0.06? Top View Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple SO-8 devices can be used in an application with dramatically reduced board space. The package is designe

5.8. irf7241.pdf Size:178K _international_rectifier

PD- 94087 IRF7241 HEXFET® Power MOSFET ?) ?) ?) ?) Trench Technology VDSS RDS(on) max (m?) ID Ultra Low On-Resistance -40V 41@VGS = -10V -6.2A P-Channel MOSFET 70@VGS = -4.5V -5.0A Available in Tape & Reel A 1 8 S D Description 2 7 New trench HEXFET® Power MOSFETs from D S International Rectifier utilize advanced processing 3 6 S D techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the 4 5 G D ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer SO-8 Top View with an extremely efficient and reliable device for use in battery and load management applications. Absolute Maximum Ratings Parameter Max. Units VDS Drain- Source Voltage -40 V ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -6.2 ID @ TA= 70°C Continuous Drain Current, VGS @ -10V -4.9 A IDM Pulsed Drain Current Q -25 PD @TA = 25°C Power Dissipation S 2.5 W PD @TA = 70°C Power Dissipation S 1.6 Li

5.9. irf7205.pdf Size:166K _international_rectifier

PD - 9.1104B IRF7205 HEXFET® Power MOSFET Adavanced Process Technology A 1 8 S D Ultra Low On-Resistance VDSS = -30V 2 7 P-Channel MOSFET S D Surface Mount 3 6 S D RDS(on) = 0.070? Available in Tape & Reel 4 5 G D Dynamic dv/dt Rating ID = -4.6A Fast Switching T op View Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized SO-8 leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.

5.10. irf720spbf.pdf Size:1163K _international_rectifier

PD - 95119 IRF720SPbF • Lead-Free 3/17/04 Document Number: 91044 www.vishay.com 1 IRF720SPbF Document Number: 91044 www.vishay.com 2 IRF720SPbF Document Number: 91044 www.vishay.com 3 IRF720SPbF Document Number: 91044 www.vishay.com 4 IRF720SPbF Document Number: 91044 www.vishay.com 5 IRF720SPbF Document Number: 91044 www.vishay.com 6 IRF720SPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) I I I I I I I I I I = I OR I I I I = I I = = I Document Number: 91044 www.vishay.com 7 IRF720SPbF D2Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 1.60 (.063) 4.10 (.161) 1.50 (.059) 0.368 (.0145) 3.90 (.153) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 11.60 (.457) 11.40 (.449) 1.65 (.065) 24.30 (.957) 15.42 (.609) 23.90 (.941) 15.22 (.601) TRL 1.75 (.069) 10.90 (.429) 1.25 (.049) 4.72 (.136) 10.70

5.11. irf7240.pdf Size:229K _international_rectifier

PD- 93916 IRF7240 HEXFET® Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -40V 0.015@VGS = -10V -10.5A Surface Mount 0.025@VGS = -4.5V -8.4A Available in Tape & Reel A 1 8 Description S D These P-Channel MOSFETs from International 2 7 S D Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon 3 6 S D area. This benefit provides the designer with an 4 5 extremely efficient device for use in battery and load G D management applications.. SO-8 Top View The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. Absolute Maximum Ratings Parameter Max. Units VDS Drain- Source

5.12. irf7201.pdf Size:182K _international_rectifier

PD - 91100C PRELIMINARY IRF7201 HEXFET® Power MOSFET Generation V Technology A A 1 8 S D Ultra Low On-Resistance VDSS = 30V 2 7 N-Channel MOSFET S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D Dynamic dv/dt Rating RDS(on) = 0.030W Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and SO-8 multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board spa

5.13. irf720a.pdf Size:926K _samsung

µ Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 1.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V µ ? Lower RDS(ON) : 1.408 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 400 ? Continuous Drain Current (TC=25 ) 3.3 ID A ? Continuous Drain Current (TC=100 ) 2.1 1 IDM Drain Current-Pulsed A O 13 VGS Gate-to-Source Voltage _ V 2 EAS Single Pulsed Avalanche Energy mJ 249 O IAR Avalanche Current 1 3.3 A O EAR Repetitive Avalanche Energy 1 4.9 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 4.0 O ? Total Power Dissipation (TC=25 ) 49 W PD ? Linear Derating Factor W/ 0.39 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range ? Maximum Lead Temp. for Soldering TL 300 Purpos

5.14. irf720_sihf720.pdf Size:201K _vishay

IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 400 V Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 1.8 RoHS* • Fast Switching Qg (Max.) (nC) 20 COMPLIANT • Ease of Paralleling Qgs (nC) 3.3 Qgd (nC) 11 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Third generation Power MOSFETs from Vishay provide the TO-220AB designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation S levels to approximately 50 W. The low thermal resistance S D G and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF720PbF Lead (Pb)-free SiHF720-E3 IRF720 SnPb SiHF720 ABSOLU

See also transistors datasheet: IRF7201 , IRF7204 , IRF7205 , IRF7207 , IRF720A , IRF720FI , IRF720S , IRF721 , 2SK2996 , IRF7220 , IRF723 , IRF7233 , IRF730 , IRF730A , IRF730AL , IRF730AS , IRF730FI .

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