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IRF7233 MOSFET (IC) Datasheet. Cross Reference Search. IRF7233 Equivalent

Type Designator: IRF7233

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd), W: 2.5

Maximum Drain-Source Voltage |Vds|, V: 14

Maximum Gate-Source Voltage |Vgs|, V: 4.5

Maximum Drain Current |Id|, A: 9.5

Maximum Junction Temperature (Tj), °C: 150

Rise Time (tr), nS:

Drain-Source Capacitance (Cd), pF: 4530

Maximum Drain-Source On-State Resistance (Rds), Ohm: 0.02

Package: SO8

IRF7233 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF7233 PDF doc:

1.1. irf7233.pdf Size:92K _international_rectifier

IRF7233
IRF7233

PD- 91849D IRF7233 HEXFET Power MOSFET Ultra Low On-Resistance A 1 8 S D P-Channel MOSFET VDSS = -12V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D 4 5 G D RDS(on) = 0.020? Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provide

5.1. irf720-1-2-3-fi.pdf Size:476K _st2

IRF7233
IRF7233

5.2. irf720b.pdf Size:879K _fairchild_semi

IRF7233
IRF7233

November 2001 IRF720B/IRFS720B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 3.3A, 400V, RDS(on) = 1.75? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 14 nC) planar, DMOS technology. Low Crss ( typical 11 pF) This advanced technology has been especially tailored to Fast switchi

5.3. irf720spbf.pdf Size:1163K _international_rectifier

IRF7233
IRF7233

PD - 95119 IRF720SPbF Lead-Free 3/17/04 Document Number: 91044 www.vishay.com 1 IRF720SPbF Document Number: 91044 www.vishay.com 2 IRF720SPbF Document Number: 91044 www.vishay.com 3 IRF720SPbF Document Number: 91044 www.vishay.com 4 IRF720SPbF Document Number: 91044 www.vishay.com 5 IRF720SPbF Document Number: 91044 www.vishay.com 6 IRF720SPbF D2Pak Package Outline D

5.4. irf7204.pdf Size:145K _international_rectifier

IRF7233
IRF7233

PD - 9.1103B IRF7204 HEXFET Power MOSFET Adavanced Process Technology A 1 8 S D Ultra Low On-Resistance VDSS = -20V 2 7 P-Channel MOSFET S D Surface Mount 3 6 S D RDS(on) = 0.060? Available in Tape & Reel 4 5 G D Dynamic dv/dt Rating ID = -5.3A Fast Switching Top View Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing te

5.5. irf7205.pdf Size:166K _international_rectifier

IRF7233
IRF7233

PD - 9.1104B IRF7205 HEXFET Power MOSFET Adavanced Process Technology A 1 8 S D Ultra Low On-Resistance VDSS = -30V 2 7 P-Channel MOSFET S D Surface Mount 3 6 S D RDS(on) = 0.070? Available in Tape & Reel 4 5 G D Dynamic dv/dt Rating ID = -4.6A Fast Switching T op View Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing te

5.6. irf7201.pdf Size:182K _international_rectifier

IRF7233
IRF7233

PD - 91100C PRELIMINARY IRF7201 HEXFET Power MOSFET Generation V Technology A A 1 8 S D Ultra Low On-Resistance VDSS = 30V 2 7 N-Channel MOSFET S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D Dynamic dv/dt Rating RDS(on) = 0.030W Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

5.7. irf7240.pdf Size:229K _international_rectifier

IRF7233
IRF7233

PD- 93916 IRF7240 HEXFET Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -40V 0.015@VGS = -10V -10.5A Surface Mount 0.025@VGS = -4.5V -8.4A Available in Tape & Reel A 1 8 Description S D These P-Channel MOSFETs from International 2 7 S D Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon 3 6 S D

5.8. irf720s.pdf Size:363K _international_rectifier

IRF7233
IRF7233

5.9. irf7207.pdf Size:89K _international_rectifier

IRF7233
IRF7233

PD - 91879A IRF7207 HEXFET Power MOSFET Generation 5 Technology A 1 8 S D P-Channel Mosfet VDSS = -20V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D Dynamic dv/dt Rating 4 5 G D Fast Switching RDS(on) = 0.06? Top View Description Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely lo

5.10. irf720.pdf Size:894K _international_rectifier

IRF7233
IRF7233

PD - 94844 IRF720PbF Lead-Free 11/14/03 Document Number: 91043 www.vishay.com 1 IRF720PbF Document Number: 91043 www.vishay.com 2 IRF720PbF Document Number: 91043 www.vishay.com 3 IRF720PbF Document Number: 91043 www.vishay.com 4 IRF720PbF Document Number: 91043 www.vishay.com 5 IRF720PbF Document Number: 91043 www.vishay.com 6 IRF720PbF TO-220AB Package Outline Dime

5.11. irf7210.pdf Size:78K _international_rectifier

IRF7233
IRF7233

PD- 91844A IRF7210 HEXFET Power MOSFET Ultra Low On-Resistance A 1 8 S D P-Channel MOSFET VDSS = -12V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D 4 5 G D RDS(on) = 0.007? Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit pro

5.12. irf7220.pdf Size:81K _international_rectifier

IRF7233
IRF7233

PD- 91850C IRF7220 HEXFET Power MOSFET Ultra Low On-Resistance A 1 8 S D P-Channel MOSFET VDSS = -14V 2 7 Surface Mount S D Available in Tape & Reel 3 6 S D 4 5 G D RDS(on) = 0.012? Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit pro

5.13. irf7241.pdf Size:178K _international_rectifier

IRF7233
IRF7233

PD- 94087 IRF7241 HEXFET Power MOSFET ?) ?) ?) ?) Trench Technology VDSS RDS(on) max (m?) ID Ultra Low On-Resistance -40V 41@VGS = -10V -6.2A P-Channel MOSFET 70@VGS = -4.5V -5.0A Available in Tape & Reel A 1 8 S D Description 2 7 New trench HEXFET Power MOSFETs from D S International Rectifier utilize advanced processing 3 6 S D techniques to achieve extremely low on-

5.14. irf720a.pdf Size:926K _samsung

IRF7233
IRF7233

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 1.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V ? Lower RDS(ON) : 1.408 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value

5.15. irf720_sihf720.pdf Size:201K _vishay

IRF7233
IRF7233

IRF720, SiHF720 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 V Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 1.8 RoHS* Fast Switching Qg (Max.) (nC) 20 COMPLIANT Ease of Paralleling Qgs (nC) 3.3 Qgd (nC) 11 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Thi

5.16. irf7205.pdf Size:1894K _kexin

IRF7233
IRF7233

SMD Type MOSFET P-Channel MOSFET IRF7205 (KRF7205) SOP-8 ■ Features ● VDS (V) =-30V ● ID =-4.6 A (VGS =-10V) 1.50 0.15 ● RDS(ON) < 70mΩ (VGS =-10V) ● RDS(ON) < 130mΩ (VGS =-4.5V) 1 Source 5 Drain ● Fast Switching 6 Drain 2 Source 7 Drain 3 Source 8 Drain 4 Gate A 1 8 S D 2 7 S D 3 6 S D 4 5 G D ■ Absolute Maximum Ratings Ta = 25℃ Parameter

See also transistors datasheet: IRF7207 , IRF720A , IRF720FI , IRF720S , IRF721 , IRF722 , IRF7220 , IRF723 , 2SK2837 , IRF730 , IRF730A , IRF730AL , IRF730AS , IRF730FI , IRF730S , IRF731 , IRF732 .

Search Terms:

 IRF7233 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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