All MOSFET. Datasheet

 

IRF730A MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF730A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 74 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 5.5 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 600 pF

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: TO220AB

IRF730A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF730A PDF doc:

1.1. irf730a.pdf Size:376K _international_rectifier

IRF730A
IRF730A

PD - 94976 SMPS MOSFET IRF730APbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 400V 1.0? 5.5A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Volt

1.2. irf730as-l.pdf Size:309K _international_rectifier

IRF730A
IRF730A

PD-95114 SMPS MOSFET IRF730AS/LPbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 400V 1.0? 5.5A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and D 2 TO-262

1.3. irf730as.pdf Size:149K _international_rectifier

IRF730A
IRF730A

PD-93772A SMPS MOSFET IRF730AS/L HEXFET® Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 400V 1.0? 5.5A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 Pak Avalanche Voltag

1.4. irf730a.pdf Size:927K _samsung

IRF730A
IRF730A

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology ? RDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V µ ? Lower RDS(ON) : 0.765 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Un

1.5. irf730a_sihf730a.pdf Size:206K _vishay

IRF730A
IRF730A

IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg results in Simple Drive VDS (V) 400 Available Requirement RDS(on) (?)VGS = 10 V 1.0 RoHS* • Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 22 Ruggedness Qgs (nC) 5.8 • Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 9.3 • Effective Coss Spec

Datasheet: IRF720FI , IRF720S , IRF721 , IRF722 , IRF7220 , IRF723 , IRF7233 , IRF730 , IRF3205 , IRF730AL , IRF730AS , IRF730FI , IRF730S , IRF731 , IRF732 , IRF7321D2 , IRF7322D1 .

 


IRF730A
  IRF730A
  IRF730A
  IRF730A
 
IRF730A
  IRF730A
  IRF730A
  IRF730A
 

social 

LIST

Last Update

MOSFET: 2SK642 | 2SK641 | SVF2N60D | SVF2N60T | SVF2N60F | SVF2N60M | FQP630 | FMR23N50E | FMV23N50E | FMH23N50E | STK0460F | UTC50N06L | TSP8N60M | TSF8N60M | STK630F |

Enter a full or partial SMD code with a minimum of 2 letters or numbers