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IRF730AS MOSFET (IC) Datasheet. Cross Reference Search. IRF730AS Equivalent

Type Designator: IRF730AS

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd), W: 74

Maximum Drain-Source Voltage |Vds|, V: 400

Maximum Gate-Source Voltage |Vgs|, V: 10

Maximum Drain Current |Id|, A: 5.5

Maximum Junction Temperature (Tj), °C: 150

Rise Time (tr), nS:

Drain-Source Capacitance (Cd), pF:

Maximum Drain-Source On-State Resistance (Rds), Ohm: 1

Package: D2PAK

IRF730AS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF730AS PDF doc:

1.1. irf730as-l.pdf Size:309K _international_rectifier

IRF730AS
IRF730AS

PD-95114 SMPS MOSFET IRF730AS/LPbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 400V 1.0? 5.5A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and D 2 TO-262

1.2. irf730as.pdf Size:149K _international_rectifier

IRF730AS
IRF730AS

PD-93772A SMPS MOSFET IRF730AS/L HEXFET® Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 400V 1.0? 5.5A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 Pak Avalanche Voltag

3.1. irf730a.pdf Size:376K _international_rectifier

IRF730AS
IRF730AS

PD - 94976 SMPS MOSFET IRF730APbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 400V 1.0? 5.5A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Volt

3.2. irf730a.pdf Size:927K _samsung

IRF730AS
IRF730AS

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology ? RDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V µ ? Lower RDS(ON) : 0.765 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Un

3.3. irf730a_sihf730a.pdf Size:206K _vishay

IRF730AS
IRF730AS

IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg results in Simple Drive VDS (V) 400 Available Requirement RDS(on) (?)VGS = 10 V 1.0 RoHS* • Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 22 Ruggedness Qgs (nC) 5.8 • Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 9.3 • Effective Coss Spec

See also transistors datasheet: IRF721 , IRF722 , IRF7220 , IRF723 , IRF7233 , IRF730 , IRF730A , IRF730AL , IRF740 , IRF730FI , IRF730S , IRF731 , IRF732 , IRF7321D2 , IRF7322D1 , IRF7324D1 , IRF733 .

Search Terms:

 IRF730AS - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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