All MOSFET Datasheet

 

IRF731 MOSFET (IC) Datasheet. Cross Reference Search. IRF731 Equivalent

Type Designator: IRF731

Type of IRF731 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 75

Maximum drain-source voltage |Uds|, V: 350

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 5.5

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF731 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 1

Package: TO220

IRF731 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF731 PDF doc:

1.1. irf7314q.pdf Size:148K _international_rectifier

IRF731
IRF731

PD -93945A IRF7314Q HEXFET® Power MOSFET Typical Applications VDSS RDS(on) max ID • Anti-lock Braking Systems (ABS) -20V 0.058@VGS = -4.5V -5.2A • Electronic Fuel Injection 0.098@VGS = -2.7V -4.42A • Air bag Benefits • Advanced Process Technology • Dual P-Channel MOSFET 1 8 S1 D1 • Ultra Low On-Resistance 2 7 G1 D1 • 175°C Operating Temperature 3 6 S2 D2 • Repetitive Avalanch

1.2. irf7317.pdf Size:156K _international_rectifier

IRF731
IRF731

PD - 9.1568B IRF7317 PRELIMINARY HEXFET® Power MOSFET Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 Dual N and P Channel MOSFET 2 7 G1 D1 Surface Mount VDSS 20V -20V 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-CHANNEL MOSFET RDS(on) 0.029? 0.058? Description Top View Fifth Generation HEXFETs from International Rectifier utilize ad

1.3. irf7313.pdf Size:105K _international_rectifier

IRF731
IRF731

PD - 9.1480A IRF7313 PRELIMINARY HEXFET® Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 VDSS = 30V Dual N-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.029? T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

1.4. irf7311.pdf Size:209K _international_rectifier

IRF731
IRF731

PD - 91435C IRF7311 HEXFET® Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 VDSS = 20V Dual N-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.029? Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

1.5. irf7316.pdf Size:103K _international_rectifier

IRF731
IRF731

PD - 9.1505A IRF7316 PRELIMINARY HEXFET® Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -30V Dual P-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.058? T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

1.6. irf7319.pdf Size:137K _international_rectifier

IRF731
IRF731

PD - 9.1606A IRF7319 PRELIMINARY HEXFET® Power MOSFET Generation V Technology N-CHANNEL MOSFE T N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 Dual N and P Channel MOSFET 2 7 G1 D1 VDSS 30V -30V Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-C H ANN EL MO SFE T RDS(on) 0.029? 0.058? Top View Description Fifth Generation HEXFETs from International Rectifier util

1.7. irf7316s.pdf Size:103K _international_rectifier

IRF731
IRF731

PD - 9.1505A IRF7316 PRELIMINARY HEXFET® Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -30V Dual P-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.058? T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

1.8. irf7314.pdf Size:147K _international_rectifier

IRF731
IRF731

PD - 9.1436B IRF7314 PRELIMINARY HEXFET® Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -20V 2 7 Dual P-Channel MOSFET G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.058? Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

See also transistors datasheet: IRF723 , IRF7233 , IRF730 , IRF730A , IRF730AL , IRF730AS , IRF730FI , IRF730S , BS170 , IRF732 , IRF7321D2 , IRF7322D1 , IRF7324D1 , IRF733 , IRF734 , IRF7353D1 , IRF737LC .

Search Terms:

 IRF731 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


IRF731
  IRF731
  IRF731
  IRF731
 
IRF731
  IRF731
  IRF731
  IRF731
 

social 

LIST

Last Update

MOSFET: RFP2N18L | RFL1P10 | RFL1P08 | RFL2N06L | RFL2N06 | RFL2N05L | RFL2N05 | RFL1N20L | RFL1N20 | RFL1N18L | RFL1N18 | RFL1N10 | RFL1N08 | SM7308CSKP | SM6043CSQ |

Enter a full or partial SMD code with a minimum of 2 letters or numbers