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SM2014NSKP MOSFET (IC) Datasheet. Cross Reference Search. SM2014NSKP Equivalent

Type Designator: SM2014NSKP

Marking Code: SM2014

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd), W: 6.3

Maximum Drain-Source Voltage |Vds|, V: 20

Maximum Gate-Source Voltage |Vgs|, V: 12

Maximum Drain Current |Id|, A: 14.6

Maximum Junction Temperature (Tj), °C: 150

Rise Time (tr), nS: 9

Drain-Source Capacitance (Cd), pF: 135

Maximum Drain-Source On-State Resistance (Rds), Ohm: 0.0195

Package: DFN5X6A-8

SM2014NSKP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SM2014NSKP PDF doc:

1.1. sm2014nskp.pdf Size:286K _sino

SM2014NSKP
SM2014NSKP

SM2014NSKP ® N-Channel Enhancement Mode MOSFET Features Pin Description 20V/13.8A, D D D D RDS(ON)= 19.5m (max.) @ VGS=4.5V RDS(ON)= 27m (max.) @ VGS=2.5V G Pin 1 Reliable and Rugged S S S Lead Free and Green Devices Available DFN5x6-8 (RoHS Compliant) ESD Protection. D (5, 6) Applications G (4) Power Management in Notebook Computer, Portable Equipment and Battery

2.1. sm2014nsu.pdf Size:259K _sino

SM2014NSKP
SM2014NSKP

SM2014NSU ® N-Channel Enhancement Mode MOSFET Features Pin Description 20V/13.8A, D RDS(ON)= 19.5m (max.) @ VGS=4.5V S RDS(ON)= 27m (max.) @ VGS=2.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant) ESD Protection. D (2) Applications G (1) Power Management in Notebook Computer, Portable Equipment and Battery Powered Syste

5.1. esm2012.pdf Size:117K _st

SM2014NSKP
SM2014NSKP

ESM2012DV NPN DARLINGTON POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R JUNCTION TO CASE th SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: MOTOR CONTROL UPS DC/DC & DC/AC CONVERTERS ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Sym

5.2. sm2011pskp.pdf Size:256K _sino

SM2014NSKP
SM2014NSKP

SM2011PSKP ® P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-100Aa, D D RDS(ON) = 2.0m (max.) @ VGS =-10V D D RDS(ON) = 2.5m (max.) @ VGS =-4.5V RDS(ON) = 3.6m (max.) @ VGS =-2.5V G Pin 1 S S 100% UIS + Rg Tested S DFN5x6A-8_EP ESD Protection Reliable and Rugged ( 5,6,7,8 ) Lead Free and Green Devices Available DDDD (RoHS Compliant) (4) Applications

5.3. sm2013pskp.pdf Size:258K _sino

SM2014NSKP
SM2014NSKP

SM2013PSKP ® P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-100Aa, D D RDS(ON) = 3.0m (max.) @ VGS =-10V D D RDS(ON) = 3.9m (max.) @ VGS =-4.5V RDS(ON) = 5.7m (max.) @ VGS =-2.5V G Pin 1 S S 100% UIS + Rg Tested S DFN5x6A-8_EP Reliable and Rugged Lead Free and Green Devices Available ( 5,6,7,8 ) (RoHS Compliant) DDDD Applications (4) Portable Equi

See also transistors datasheet: SM7A24NSU , SM7A24NSUB , SM7A25NSF , SM7A25NSFP , SM7A25NSU , SM7A25NSUB , SM2004NSD , SM2006NSK , IRFB4227 , SM2014NSU , SM2030NSU , SM2054NSD , SM2054NSV , SM2201NSQG , SM2202NSQE , SM2202NSQG , SM4831NAK .

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 SM2014NSKP - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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