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IRF7322D1 MOSFET (IC) Datasheet. Cross Reference Search. IRF7322D1 Equivalent

Type Designator: IRF7322D1

Type of IRF7322D1 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 2

Maximum drain-source voltage |Uds|, V: 20

Maximum gate-source voltage |Ugs|, V: 12

Maximum drain current |Id|, A: 5.3

Maximum junction temperature (Tj), ┬░C: 150

Rise Time of IRF7322D1 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 780

Maximum drain-source on-state resistance (Rds), Ohm: 0.058

Package: SO8

IRF7322D1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF7322D1 PDF doc:

1.1. irf7322d1.pdf Size:172K _international_rectifier

IRF7322D1
IRF7322D1

PD- 91705A IRF7322D1 ? ? ? ? FETKY? MOSFET / Schottky Diode Co-packaged HEXFET« Power MOSFET 1 8 and Schottky Diode A K VDSS = -20V Ideal For Buck Regulator Applications 2 7 A K P-Channel HEXFET RDS(on) = 0.058? 3 6 S D Low VF Schottky Rectifier 4 5 G D Generation 5 Technology Schottky Vf = 0.39V SO-8 Footprint Top View Description The FETKY family of co-packaged M

4.1. irf7325.pdf Size:225K _international_rectifier

IRF7322D1
IRF7322D1

PD- 94094 IRF7325 HEXFET« Power MOSFET Trench Technology ?) VDSS RDS(on) max (m?) ID ?) ?) ?) Ultra Low On-Resistance -12V 24@VGS = -4.5V ▒7.8A Dual P-Channel MOSFET 33@VGS = -2.5V ▒6.2A Low Profile (<1.8mm) 49@VGS = -1.8V ▒3.9A Available in Tape & Reel Description New P-Channel HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to ac

4.2. irf7329.pdf Size:208K _international_rectifier

IRF7322D1
IRF7322D1

PD- 94095 IRF7329 HEXFET« Power MOSFET Trench Technology ?) VDSS RDS(on) max (m?) ID ?) ?) ?) Ultra Low On-Resistance 17@VGS = -4.5V ▒9.2A Dual P-Channel MOSFET -12V 21@VGS = -2.5V ▒7.4A Low Profile (<1.8mm) 30@VGS = -1.8V ▒4.6A Available in Tape & Reel Description New P-Channel HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to ach

4.3. irf7324d1.pdf Size:210K _international_rectifier

IRF7322D1
IRF7322D1

PD- 91789 IRF7324D1 PRELIMINARY ? ? ? ? FETKY? MOSFET / Schottky Diode Co-packaged HEXFET? Power 1 8 A K MOSFET and Schottky Diode VDSS = -20V 2 7 Ideal for Mobile Phone Applications A K Generation V Technology 3 6 S D RDS(on) = 0.18? SO-8 Footprint 4 5 G D Schottky Vf = 0.39V Top View Description The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer t

4.4. irf7326d2.pdf Size:116K _international_rectifier

IRF7322D1
IRF7322D1

PD - 93763 IRF7326D2 ? ? ? ? FETKY? MOSFET / Schottky Diode Co-packaged HEXFET« Power MOSFET 1 8 and Schottky Diode A K VDSS = -30V Ideal For Buck Regulator Applications 2 7 A K P-Channel HEXFET RDS(on) = 0.10? 3 6 S D Low VF Schottky Rectifier 4 5 G D Generation 5 Technology Schottky Vf = 0.52V SO-8 Footprint Top View Description The FETKY family of co-packaged MO

4.5. irf7324.pdf Size:99K _international_rectifier

IRF7322D1
IRF7322D1

PD -93799A IRF7324 HEXFET« Power MOSFET Trench Technology Ultra Low On-Resistance 1 8 S1 D1 VDSS = -20V Dual P-Channel MOSFET 2 7 G1 D1 Low Profile (<1.1mm) 3 6 S2 D2 Available in Tape & Reel 4 5 2.5V Rated G2 D2 RDS(on) = 0.018? Top View Description New trench HEXFET« Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely

4.6. irf7328.pdf Size:108K _international_rectifier

IRF7322D1
IRF7322D1

PD -94000 IRF7328 HEXFET« Power MOSFET Trench Technology VDSS RDS(on) max ID Ultra Low On-Resistance -30V 21m?@VGS = -10V -8.0A Dual P-Channel MOSFET 32m?@VGS = -4.5V -6.8A Available in Tape & Reel Description 1 8 New trench HEXFET« Power MOSFETs from S1 D1 International Rectifier utilize advanced processing 2 7 G1 D1 techniques to achieve extremely low on-resistance 3 6 per

4.7. irf7321d2.pdf Size:178K _international_rectifier

IRF7322D1
IRF7322D1

PD- 91667C IRF7321D2 TM FETKY MOSFET & Schottky Diode Co-packaged HEXFET? Power 1 8 A K MOSFET and Schottky Diode VDSS = -30V 2 7 Ideal For Buck Regulator Applications A K P-Channel HEXFET? 3 6 RDS(on) = 0.062? S D Low VF Schottky Rectifier 4 5 G D Generation 5 Technology Schottky Vf = 0.52V SO-8 Footprint Top View Description The FETKYTM family of Co-packaged HEXFETs

See also transistors datasheet: IRF730A , IRF730AL , IRF730AS , IRF730FI , IRF730S , IRF731 , IRF732 , IRF7321D2 , IRF540N , IRF7324D1 , IRF733 , IRF734 , IRF7353D1 , IRF737LC , IRF740 , IRF7401 , IRF7403 .

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