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IRF733 MOSFET (IC) Datasheet. Cross Reference Search. IRF733 Equivalent

Type Designator: IRF733

Type of IRF733 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 75

Maximum drain-source voltage |Uds|, V: 350

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 4.5

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF733 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 1.5

Package: TO220

IRF733 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF733 PDF doc:

1.1. irf7331.pdf Size:199K _international_rectifier

IRF733
IRF733

PD - 94225 IRF7331 HEXFET Power MOSFET Ultra Low On-Resistance ?) VDSS RDS(on) max (m?) ID ?) ?) ?) Dual N-Channel MOSFET 20V 30@VGS = 4.5V 7.0A Surface Mount 45@VGS = 2.5V 5.6A Available in Tape & Reel Description 1 8 S1 D1 These N-Channel HEXFET? power MOSFETs from 2 7 G1 D1 International Rectifier utilize advanced processing techniques to achieve the extremely low on-r

1.2. irf7338.pdf Size:169K _international_rectifier

IRF733
IRF733

PD - 94372A IRF7338 HEXFET Power MOSFET l Ultra Low On-Resistance N-CHANNEL MOSFET N-Ch P-Ch 1 8 S1 D1 l Dual N and P Channel MOSFET 2 7 l Surface Mount G1 D1 VDSS 12V -12V l Available in Tape & Reel 3 6 S2 D2 4 5 G2 D2 P-CHANNEL MOSFET RDS(on) 0.034? 0.150? Top View Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniqu

5.1. irf730_1.pdf Size:59K _philips

IRF733
IRF733

Philips Semiconductors Product specification PowerMOS transistor IRF730 Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 400 V High thermal cycling performance Low thermal resistance ID = 7.2 A g RDS(ON) ? 1 ? s GENERAL DESCRIPTION PINNING SOT78 (TO220AB) N-channel, enhancement mode PIN DESCRIPTION tab field-ef

5.2. irf730.pdf Size:255K _st

IRF733
IRF733

IRF730 N-channel 400V - 0.75? - 5.5A TO-220 PowermeshII Power MOSFET General features Type VDSS RDS(on) ID IRF730 400V <1? 5.5A Exceptional dv/dt capability 100% avalanche tested Low gate charge 3 2 1 Description TO-220 The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout refinements introduced greatly improve the Ron*area figure of merit

5.3. irf730-1-2-3-fi.pdf Size:486K _st2

IRF733
IRF733

5.4. irf730b.pdf Size:898K _fairchild_semi

IRF733
IRF733

November 2001 IRF730B/IRFS730B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 5.5A, 400V, RDS(on) = 1.0? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 25 nC) planar, DMOS technology. Low Crss ( typical 20 pF) This advanced technology has been especially tailored to Fast switchin

5.5. irf730.pdf Size:177K _fairchild_semi

IRF733
IRF733

5.6. irf7353d1.pdf Size:170K _international_rectifier

IRF733
IRF733

PD- 91802A IRF7353D1 ? ? ? ? FETKY? MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET 1 8 A K and Schottky Diode VDSS = 30V 2 7 Ideal For Buck Regulator Applications A K N-Channel HEXFET 3 6 RDS(on) = 0.029? S D Low VF Schottky Rectifier 4 5 G D Generation 5 Technology Schottky Vf = 0.39V SO-8 Footprint Top View Description The FETKY family of co-packaged M

5.7. irf7325.pdf Size:225K _international_rectifier

IRF733
IRF733

PD- 94094 IRF7325 HEXFET Power MOSFET Trench Technology ?) VDSS RDS(on) max (m?) ID ?) ?) ?) Ultra Low On-Resistance -12V 24@VGS = -4.5V 7.8A Dual P-Channel MOSFET 33@VGS = -2.5V 6.2A Low Profile (<1.8mm) 49@VGS = -1.8V 3.9A Available in Tape & Reel Description New P-Channel HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to ac

5.8. irf7379.pdf Size:215K _international_rectifier

IRF733
IRF733

PD - 91625 IRF7379 HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 2 7 Complimentary Half Bridge G1 D1 VDSS 30V -30V Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-CHANNEL MOSFET RDS(on) 0.045? 0.090? Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processin

5.9. irf737lcpbf.pdf Size:248K _international_rectifier

IRF733
IRF733

PD - 95947 IRF737LCPbF Lead-Free 12/20/04 Document Number: 91050 www.vishay.com 1 IRF737LCPbF Document Number: 91050 www.vishay.com 2 IRF737LCPbF Document Number: 91050 www.vishay.com 3 IRF737LCPbF Document Number: 91050 www.vishay.com 4 IRF737LCPbF Document Number: 91050 www.vishay.com 5 IRF737LCPbF Document Number: 91050 www.vishay.com 6 IRF737LCPbF Document Number:

5.10. irf7329.pdf Size:208K _international_rectifier

IRF733
IRF733

PD- 94095 IRF7329 HEXFET Power MOSFET Trench Technology ?) VDSS RDS(on) max (m?) ID ?) ?) ?) Ultra Low On-Resistance 17@VGS = -4.5V 9.2A Dual P-Channel MOSFET -12V 21@VGS = -2.5V 7.4A Low Profile (<1.8mm) 30@VGS = -1.8V 4.6A Available in Tape & Reel Description New P-Channel HEXFET? power MOSFETs from International Rectifier utilize advanced processing techniques to ach

5.11. irf730a.pdf Size:376K _international_rectifier

IRF733
IRF733

PD - 94976 SMPS MOSFET IRF730APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 400V 1.0? 5.5A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Volt

5.12. irf7314q.pdf Size:148K _international_rectifier

IRF733
IRF733

PD -93945A IRF7314Q HEXFET Power MOSFET Typical Applications VDSS RDS(on) max ID Anti-lock Braking Systems (ABS) -20V 0.058@VGS = -4.5V -5.2A Electronic Fuel Injection 0.098@VGS = -2.7V -4.42A Air bag Benefits Advanced Process Technology Dual P-Channel MOSFET 1 8 S1 D1 Ultra Low On-Resistance 2 7 G1 D1 175C Operating Temperature 3 6 S2 D2 Repetitive Avalanch

5.13. irf7309.pdf Size:162K _international_rectifier

IRF733
IRF733

PD - 9.1243B IRF7309 PRELIMINARY HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET Ultra Low On-Resistance 1 8 N-Ch P-Ch S1 D1 Dual N and P Channel Mosfet 2 7 G1 D1 Surface Mount VDSS 30V -30V Available in Tape & Reel 3 6 S2 D2 Dynamic dv/dt Rating 4 5 G2 D2 Fast Switching P-CHANNEL MOSFET RDS(on) 0.050? 0.10? Top View Description Fifth Generation HEXFETs from I

5.14. irf7317.pdf Size:156K _international_rectifier

IRF733
IRF733

PD - 9.1568B IRF7317 PRELIMINARY HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 Dual N and P Channel MOSFET 2 7 G1 D1 Surface Mount VDSS 20V -20V 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-CHANNEL MOSFET RDS(on) 0.029? 0.058? Description Top View Fifth Generation HEXFETs from International Rectifier utilize ad

5.15. irf7313.pdf Size:105K _international_rectifier

IRF733
IRF733

PD - 9.1480A IRF7313 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 VDSS = 30V Dual N-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.029? T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

5.16. irf7324d1.pdf Size:210K _international_rectifier

IRF733
IRF733

PD- 91789 IRF7324D1 PRELIMINARY ? ? ? ? FETKY? MOSFET / Schottky Diode Co-packaged HEXFET? Power 1 8 A K MOSFET and Schottky Diode VDSS = -20V 2 7 Ideal for Mobile Phone Applications A K Generation V Technology 3 6 S D RDS(on) = 0.18? SO-8 Footprint 4 5 G D Schottky Vf = 0.39V Top View Description The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer t

5.17. irf7311.pdf Size:209K _international_rectifier

IRF733
IRF733

PD - 91435C IRF7311 HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 VDSS = 20V Dual N-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.029? Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

5.18. irf730as-l.pdf Size:309K _international_rectifier

IRF733
IRF733

PD-95114 SMPS MOSFET IRF730AS/LPbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 400V 1.0? 5.5A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and D 2 TO-262

5.19. irf734pbf.pdf Size:1781K _international_rectifier

IRF733
IRF733

PD-95973 IRF734PbF Lead-Free 12/20/04 Document Number: 91049 www.vishay.com 1 IRF734PbF Document Number: 91049 www.vishay.com 2 IRF734PbF Document Number: 91049 www.vishay.com 3 IRF734PbF Document Number: 91049 www.vishay.com 4 IRF734PbF Document Number: 91049 www.vishay.com 5 IRF734PbF Document Number: 91049 www.vishay.com 6 IRF734PbF Document Number: 91049 www.visha

5.20. irf7303.pdf Size:111K _international_rectifier

IRF733
IRF733

PD - 9.1239D IRF7303 HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance D1 S1 VDSS = 30V Dual N-Channel Mosfet 2 7 G1 D1 Surface Mount 3 6 S2 D2 Available in Tape & Reel 4 5 G2 D2 RDS(on) = 0.050? Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to

5.21. irf7341.pdf Size:134K _international_rectifier

IRF733
IRF733

PD -91703 IRF7341 HEXFET Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = 55V 2 7 Dual N-Channel Mosfet G1 D1 Surface Mount 3 6 S2 D2 Available in Tape & Reel 4 5 G2 D2 Dynamic dv/dt Rating RDS(on) = 0.050? Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to a

5.22. irf7350.pdf Size:238K _international_rectifier

IRF733
IRF733

PD - 94226B IRF7350 HEXFET Power MOSFET Ultra Low On-Resistance N-CHANNEL MOSFET N-Ch P-Ch 1 8 S1 D1 Dual N and P Channel MOSFET 2 7 Surface Mount G1 D1 VDSS 100V -100V Available in Tape and Reel 3 6 S2 D2 4 5 G2 D2 P-CHANNEL MOSFET RDS(on) 0.21? 0.48? Top View Description These dual N and P channel HEXFET power MOSFETs from International Rectifier utilize advanced

5.23. irf7343.pdf Size:143K _international_rectifier

IRF733
IRF733

PD -91709 IRF7343 HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 Dual N and P Channel MOSFET 2 7 G1 D1 Surface Mount VDSS 55V -55V 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-CHANNEL MOSFET RDS(on) 0.050? 0.105? Description Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processi

5.24. irf7316.pdf Size:103K _international_rectifier

IRF733
IRF733

PD - 9.1505A IRF7316 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -30V Dual P-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.058? T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

5.25. irf7326d2.pdf Size:116K _international_rectifier

IRF733
IRF733

PD - 93763 IRF7326D2 ? ? ? ? FETKY? MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET 1 8 and Schottky Diode A K VDSS = -30V Ideal For Buck Regulator Applications 2 7 A K P-Channel HEXFET RDS(on) = 0.10? 3 6 S D Low VF Schottky Rectifier 4 5 G D Generation 5 Technology Schottky Vf = 0.52V SO-8 Footprint Top View Description The FETKY family of co-packaged MO

5.26. irf730pbf.pdf Size:2193K _international_rectifier

IRF733
IRF733

PD - 94977 IRF730PbF Lead-Free 02/03/04 Document Number: 91047 www.vishay.com 1 IRF730PbF Document Number: 91047 www.vishay.com 2 IRF730PbF Document Number: 91047 www.vishay.com 3 IRF730PbF Document Number: 91047 www.vishay.com 4 IRF730PbF Document Number: 91047 www.vishay.com 5 IRF730PbF Document Number: 91047 www.vishay.com 6 IRF730PbF TO-220AB Package Outline Dime

5.27. irf734.pdf Size:206K _international_rectifier

IRF733
IRF733

5.28. irf7342d2.pdf Size:125K _international_rectifier

IRF733
IRF733

PD- 94101 IRF7342D2 TM FETKY MOSFET & Schottky Diode Co-packaged HEXFET? Power 1 8 A K MOSFET and Schottky Diode VDSS = -55V 2 7 Ideal For Buck Regulator Applications A K P-Channel HEXFET? 3 6 RDS(on) = 105m? S D Low VF Schottky Rectifier 4 5 G D SO-8 Footprint Schottky Vf = 0.61V Top View Description The FETKYTM family of Co-packaged HEXFETs and Schottky diodes of

5.29. irf7304.pdf Size:112K _international_rectifier

IRF733
IRF733

PD - 9.1240C IRF7304 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance 1 8 S1 D1 Dual P-Channel Mosfet VDSS = -20V 2 7 G1 D1 Surface Mount 3 6 Available in Tape & Reel S2 D2 Dynamic dv/dt Rating 4 5 G2 D2 RDS(on) = 0.090? Fast Switching T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

5.30. irf7319.pdf Size:137K _international_rectifier

IRF733
IRF733

PD - 9.1606A IRF7319 PRELIMINARY HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFE T N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 Dual N and P Channel MOSFET 2 7 G1 D1 VDSS 30V -30V Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-C H ANN EL MO SFE T RDS(on) 0.029? 0.058? Top View Description Fifth Generation HEXFETs from International Rectifier util

5.31. irf7353d2.pdf Size:112K _international_rectifier

IRF733
IRF733

PD- 93809 IRF7353D2 ? ? ? ? FETKY? MOSFET / Schottky Diode Co-Pack HEXFET Power MOSFET and 1 8 A K Schottky Diode VDSS = 30V 2 7 Ideal For Buck Regulator Applications A K N-Channel HEXFET power MOSFET 3 6 RDS(on) = 0.029? S D Low VF Schottky Rectifier 4 5 G D Generation 5 Technology Schottky VF = 0.52V SO-8 Footprint Top View Description The FETKY? family of Co-Pa

5.32. irf7342.pdf Size:136K _international_rectifier

IRF733
IRF733

PD -91859 IRF7342 HEXFET Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -55V 2 7 Dual P-Channel Mosfet G1 D1 Surface Mount 3 6 S2 D2 Available in Tape & Reel 4 5 G2 D2 Dynamic dv/dt Rating RDS(on) = 0.105? Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to

5.33. irf7322d1.pdf Size:172K _international_rectifier

IRF733
IRF733

PD- 91705A IRF7322D1 ? ? ? ? FETKY? MOSFET / Schottky Diode Co-packaged HEXFET Power MOSFET 1 8 and Schottky Diode A K VDSS = -20V Ideal For Buck Regulator Applications 2 7 A K P-Channel HEXFET RDS(on) = 0.058? 3 6 S D Low VF Schottky Rectifier 4 5 G D Generation 5 Technology Schottky Vf = 0.39V SO-8 Footprint Top View Description The FETKY family of co-packaged M

5.34. irf7324.pdf Size:99K _international_rectifier

IRF733
IRF733

PD -93799A IRF7324 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance 1 8 S1 D1 VDSS = -20V Dual P-Channel MOSFET 2 7 G1 D1 Low Profile (<1.1mm) 3 6 S2 D2 Available in Tape & Reel 4 5 2.5V Rated G2 D2 RDS(on) = 0.018? Top View Description New trench HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely

5.35. irf7306.pdf Size:113K _international_rectifier

IRF733
IRF733

PD - 9.1241C IRF7306 HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 VDSS = -30V Dual P-Channel Mosfet 2 7 G1 D1 Surface Mount 3 6 S2 D2 Available in Tape & Reel 4 5 RDS(on) = 0.10? G2 D2 Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques t

5.36. irf7328.pdf Size:108K _international_rectifier

IRF733
IRF733

PD -94000 IRF7328 HEXFET Power MOSFET Trench Technology VDSS RDS(on) max ID Ultra Low On-Resistance -30V 21m?@VGS = -10V -8.0A Dual P-Channel MOSFET 32m?@VGS = -4.5V -6.8A Available in Tape & Reel Description 1 8 New trench HEXFET Power MOSFETs from S1 D1 International Rectifier utilize advanced processing 2 7 G1 D1 techniques to achieve extremely low on-resistance 3 6 per

5.37. irf730s.pdf Size:895K _international_rectifier

IRF733
IRF733

PD - 95115 IRF730SPbF Lead-Free 3/16/04 Document Number: 91048 www.vishay.com 1 IRF730SPbF Document Number: 91048 www.vishay.com 2 IRF730SPbF Document Number: 91048 www.vishay.com 3 IRF730SPbF Document Number: 91048 www.vishay.com 4 IRF730SPbF Document Number: 91048 www.vishay.com 5 IRF730SPbF Document Number: 91048 www.vishay.com 6 IRF730SPbF D2Pak Package Outline D

5.38. irf7301.pdf Size:113K _international_rectifier

IRF733
IRF733

PD - 9.1238C IRF7301 HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance 1 8 S1 D1 Dual N-Channel Mosfet VDSS = 20V 2 7 G1 D1 Surface Mount 3 6 Available in Tape & Reel S2 D2 Dynamic dv/dt Rating 4 5 G2 D2 RDS(on) = 0.050? Fast Switching T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing technique

5.39. irf7316s.pdf Size:103K _international_rectifier

IRF733
IRF733

PD - 9.1505A IRF7316 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -30V Dual P-Channel MOSFET 2 7 G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.058? T op V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

5.40. irf7341q.pdf Size:137K _international_rectifier

IRF733
IRF733

PD - 94391A IRF7341Q Typical Applications HEXFET Power MOSFET Anti-lock Braking Systems (ABS) Electronic Fuel Injection VDSS RDS(on) max ID Air bag 55V 0.050@VGS = 10V 5.1A Benefits Advanced Process Technology 0.065@VGS = 4.5V 4.42A Dual N-Channel MOSFET Ultra Low On-Resistance 175C Operating Temperature Repetitive Avalanche Allowed up to Tjmax Automotive [Q101]

5.41. irf730.pdf Size:178K _international_rectifier

IRF733
IRF733

5.42. irf730as.pdf Size:149K _international_rectifier

IRF733
IRF733

PD-93772A SMPS MOSFET IRF730AS/L HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 400V 1.0? 5.5A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 Pak Avalanche Voltag

5.43. irf7307.pdf Size:194K _international_rectifier

IRF733
IRF733

PD - 9.1242B IRF7307 HEXFET Power MOSFET Generation V Technology N -C HAN NEL M O SF ET 1 8 Ultra Low On-Resistance S1 D1 N-Ch P-Ch Dual N and P Channel Mosfet 2 7 G1 D1 Surface Mount 3 6 S2 D2 VDSS 20V -20V Available in Tape & Reel 4 5 G2 D2 Dynamic dv/dt Rating P-CH ANNEL MOSFET Fast Switching Top View RDS(on) 0.050? 0.090? Description Fifth Generation HEXFETs from

5.44. irf7314.pdf Size:147K _international_rectifier

IRF733
IRF733

PD - 9.1436B IRF7314 PRELIMINARY HEXFET Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -20V 2 7 Dual P-Channel MOSFET G1 D1 Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 RDS(on) = 0.058? Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-

5.45. irf737lc.pdf Size:145K _international_rectifier

IRF733
IRF733

PD - 9.1314 PRELIMINARY IRF737LC HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating VDSS = 300V Reduced CISS, COSS, CRSS Extremely High Frequency Operation RDS(on) = 0.75? Repetitive Avalanche Rated Description ID = 6.1A This new series of Low Charge HEXFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology,

5.46. irf7389.pdf Size:165K _international_rectifier

IRF733
IRF733

PD - 91645 IRF7389 PRELIMINARY HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 Complimentary Half Bridge 2 7 G1 D1 VDSS 30V -30V Surface Mount 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-CHANNEL MOSFET RDS(on) 0.029? 0.058? Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanc

5.47. irf7321d2.pdf Size:178K _international_rectifier

IRF733
IRF733

PD- 91667C IRF7321D2 TM FETKY MOSFET & Schottky Diode Co-packaged HEXFET? Power 1 8 A K MOSFET and Schottky Diode VDSS = -30V 2 7 Ideal For Buck Regulator Applications A K P-Channel HEXFET? 3 6 RDS(on) = 0.062? S D Low VF Schottky Rectifier 4 5 G D Generation 5 Technology Schottky Vf = 0.52V SO-8 Footprint Top View Description The FETKYTM family of Co-packaged HEXFETs

5.48. irf730a.pdf Size:927K _samsung

IRF733
IRF733

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology ? RDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V ? Lower RDS(ON) : 0.765 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Un

5.49. irfp330-333_irf730-733.pdf Size:329K _samsung

IRF733
IRF733



5.50. irf730s_sihf730s.pdf Size:165K _vishay

IRF733
IRF733

IRF730S, SiHF730S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 400 Definition Surface Mount RDS(on) (?)VGS = 10 V 1.0 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt Rating Qgs (nC) 5.7 Repetitive Avalanche Rated Qgd (nC) 22 Fast Switching Ease of Paralleling Configuration Single Simple Drive

5.51. irf730_sihf730.pdf Size:196K _vishay

IRF733
IRF733

IRF730, SiHF730 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 1.0 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 5.7 Qgd (nC) 22 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220

5.52. irf730a_sihf730a.pdf Size:206K _vishay

IRF733
IRF733

IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg results in Simple Drive VDS (V) 400 Available Requirement RDS(on) (?)VGS = 10 V 1.0 RoHS* Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Qg (Max.) (nC) 22 Ruggedness Qgs (nC) 5.8 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 9.3 Effective Coss Spec

5.53. irf730.pdf Size:114K _inchange_semiconductor

IRF733
IRF733

MOSFET INCHANGE IRF730 N-channel mosfet transistor Features Ў¤ Ў¤ Ў¤ Ў¤ Ў¤ With TO-220 package Simple drive requirements Fast switching VDSS=400V; RDS(ON)ЎЬ 1.0¦ё ;ID=5.5A 1.gate 2.drain 3.source 123 Absolute Maximum Ratings Tc=25Ўж SYMBOL VDSS VGS ID PARAMETER Drain-source voltage (VGS=0) Gate-source voltage Drain Current-continuous@ TC=25Ўж Total Dissipation@TC=2

5.54. hirf730.pdf Size:46K _hsmc

IRF733
IRF733

Spec. No. : MOS200406 HI-SINCERITY Issued Date : 2004.10.01 Revised Date : 2005.04.22 MICROELECTRONICS CORP. Page No. : 1/4 HIRF730 Series Pin Assignment HIRF730 / HIRF730F Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Description Pin 3: Source Third Generation HEXFETs from international Rectifier provide the designer with the be

5.55. irf730.pdf Size:94K _a-power

IRF733
IRF733

IRF730 RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Ease of Paralleling D BVDSS 400V Ў Fast Switching Characteristic RDS(ON) 1? Ў Simple Drive Requirement ID 5.5A G S Description G TO-220(P) D APEC MOSFET provide the power designer with the best combination of fast S switching , lower on-resistance and reasonable cost. The TO-

5.56. irf730s.pdf Size:1398K _kexin

IRF733
IRF733

SMD Type MOSFET N-Channel MOSFET IRF730S (KRF730S) ■ Features ● VDS (V) =400V ● ID = 5.5 A (VGS = 10V) ● RDS(ON) < 1Ω (VGS = 10V) ● Fast switching ● Low thermal resistance d g s ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 400 V Gate-Source Voltage VGS ±20 Tc = 25℃ 5.5 Continuous Drain Current ID Tc

See also transistors datasheet: IRF730AS , IRF730FI , IRF730S , IRF731 , IRF732 , IRF7321D2 , IRF7322D1 , IRF7324D1 , IRF630 , IRF734 , IRF7353D1 , IRF737LC , IRF740 , IRF7401 , IRF7403 , IRF7404 , IRF7406 .

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 IRF733 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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