All MOSFET. IRF734 Datasheet

 

IRF734 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF734

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 74 W

Maximum Drain-Source Voltage |Vds|: 450 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Drain Current |Id|: 4.9 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: TO220AB

IRF734 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF734 PDF doc:

1.1. irf734pbf.pdf Size:1781K _international_rectifier

IRF734
IRF734

PD-95973 IRF734PbF • Lead-Free 12/20/04 Document Number: 91049 www.vishay.com 1 IRF734PbF Document Number: 91049 www.vishay.com 2 IRF734PbF Document Number: 91049 www.vishay.com 3 IRF734PbF Document Number: 91049 www.vishay.com 4 IRF734PbF Document Number: 91049 www.vishay.com 5 IRF734PbF Document Number: 91049 www.vishay.com 6 IRF734PbF Document Number: 91049 www.visha

1.2. irf7341.pdf Size:134K _international_rectifier

IRF734
IRF734

PD -91703 IRF7341 HEXFET® Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = 55V 2 7 Dual N-Channel Mosfet G1 D1 Surface Mount 3 6 S2 D2 Available in Tape & Reel 4 5 G2 D2 Dynamic dv/dt Rating RDS(on) = 0.050? Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to a

1.3. irf7343.pdf Size:143K _international_rectifier

IRF734
IRF734

PD -91709 IRF7343 HEXFET® Power MOSFET Generation V Technology N-CHANNEL MOSFET N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 Dual N and P Channel MOSFET 2 7 G1 D1 Surface Mount VDSS 55V -55V 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-CHANNEL MOSFET RDS(on) 0.050? 0.105? Description Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processi

1.4. irf734.pdf Size:206K _international_rectifier

IRF734
IRF734

1.5. irf7342d2.pdf Size:125K _international_rectifier

IRF734
IRF734

PD- 94101 IRF7342D2 TM FETKY MOSFET & Schottky Diode Co-packaged HEXFET? Power 1 8 A K MOSFET and Schottky Diode VDSS = -55V 2 7 Ideal For Buck Regulator Applications A K P-Channel HEXFET? 3 6 RDS(on) = 105m? S D Low VF Schottky Rectifier 4 5 G D SO-8 Footprint Schottky Vf = 0.61V Top View Description The FETKYTM family of Co-packaged HEXFETs and Schottky diodes of

1.6. irf7342.pdf Size:136K _international_rectifier

IRF734
IRF734

PD -91859 IRF7342 HEXFET® Power MOSFET Generation V Technology 1 8 S1 D1 Ultra Low On-Resistance VDSS = -55V 2 7 Dual P-Channel Mosfet G1 D1 Surface Mount 3 6 S2 D2 Available in Tape & Reel 4 5 G2 D2 Dynamic dv/dt Rating RDS(on) = 0.105? Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to

1.7. irf7341q.pdf Size:137K _international_rectifier

IRF734
IRF734

PD - 94391A IRF7341Q Typical Applications HEXFET® Power MOSFET • Anti-lock Braking Systems (ABS) • Electronic Fuel Injection VDSS RDS(on) max ID • Air bag 55V 0.050@VGS = 10V 5.1A Benefits • Advanced Process Technology 0.065@VGS = 4.5V 4.42A • Dual N-Channel MOSFET • Ultra Low On-Resistance • 175°C Operating Temperature • Repetitive Avalanche Allowed up to Tjmax • Automotive [Q101]

Datasheet: IRF730FI , IRF730S , IRF731 , IRF732 , IRF7321D2 , IRF7322D1 , IRF7324D1 , IRF733 , IRFP460 , IRF7353D1 , IRF737LC , IRF740 , IRF7401 , IRF7403 , IRF7404 , IRF7406 , IRF740A .

 


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