IRF7353D1 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF7353D1

Type of IRF7353D1 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 2

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 6.5

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF7353D1 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 650

Maximum drain-source on-state resistance (Rds), Ohm: 0.029

Package: SO8

Equivalent transistors for IRF7353D1

IRF7353D1 PDF documents for downloads:

1.1. irf7353d1.pdf Size:170K _international_rectifier

PD- 91802A IRF7353D1 ? ? ? ? FETKY? MOSFET / Schottky Diode Co-packaged HEXFET® Power MOSFET 1 8 A K and Schottky Diode VDSS = 30V 2 7 Ideal For Buck Regulator Applications A K N-Channel HEXFET 3 6 RDS(on) = 0.029? S D Low VF Schottky Rectifier 4 5 G D Generation 5 Technology Schottky Vf = 0.39V SO-8 Footprint Top View Description The FETKY family of co-packaged MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. SO-8 The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics.

2.1. irf7353d2.pdf Size:112K _international_rectifier

PD- 93809 IRF7353D2 ? ? ? ? FETKY? MOSFET / Schottky Diode Co-Pack HEXFET® Power MOSFET and 1 8 A K Schottky Diode VDSS = 30V 2 7 Ideal For Buck Regulator Applications A K N-Channel HEXFET power MOSFET 3 6 RDS(on) = 0.029? S D Low VF Schottky Rectifier 4 5 G D Generation 5 Technology Schottky VF = 0.52V SO-8 Footprint Top View Description The FETKY? family of Co-Pack HEXFET® Power MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. Generation 5 HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. SO-8 The SO-8 has been modified through a customized leadframe for enhanced thermal

4.1. irf7350.pdf Size:238K _international_rectifier

PD - 94226B IRF7350 HEXFET® Power MOSFET Ultra Low On-Resistance N-CHANNEL MOSFET N-Ch P-Ch 1 8 S1 D1 Dual N and P Channel MOSFET 2 7 Surface Mount G1 D1 VDSS 100V -100V Available in Tape and Reel 3 6 S2 D2 4 5 G2 D2 P-CHANNEL MOSFET RDS(on) 0.21? 0.48? Top View Description These dual N and P channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in DC motor drives and load management applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety SO-8 of power applications. With these improvements, multiple devices can be used in an application

See also transistors datasheet: IRF730S , IRF731 , IRF732 , IRF7321D2 , IRF7322D1 , IRF7324D1 , IRF733 , IRF734 , IRFZ44 , IRF737LC , IRF740 , IRF7401 , IRF7403 , IRF7404 , IRF7406 , IRF740A , IRF740AL .

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