MOSFET Datasheet


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IRF740
  IRF740
  IRF740
 
IRF740
  IRF740
  IRF740
 
IRF740
  IRF740
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AP04N60H-HF
AP04N60I ..AP2348GN-HF
AP2422GY ..AP4438AGM-HF
AP4438BGM-HF ..AP72T03GH
AP72T03GI-HF ..AP9571GS-HF
AP9573GH-HF ..AP9998GH-HF
AP9998GS-HF ..APT8056BVFR
APT8056BVR ..AUIRFS4010
AUIRFS4010-7P ..BF989S
BF990 ..BLF7G27L-140
BLF7G27L-150P ..BSH201
BSH202 ..BUK112-50GL
BUK114-50L ..BUK7611-55B
BUK7613-75B ..BUK9C07-65BIT
BUK9C10-55BIT ..CEB15A03
CEB15P15 ..CEM2407
CEM2539 ..CET6601
CET6861 ..DMN2990UDJ
DMN3005LK3 ..FCA22N60N
FCA22N60N ..FDB8896
FDB8896 ..FDD8896_F085
FDD8896_F085 ..FDMS3604AS
FDMS3604AS ..FDP6030L
FDP6035AL ..FDS6900AS
FDS6900AS ..FKP330C
FKV460S ..FQN1N60C
FQN1N60C ..FRE160R
FRE260D ..FSL230D
FSL230R ..H7N0308LS
H7N0310LD ..HAT2174H
HAT2174N ..HUF76121P3
HUF76121S3S ..IPB120N04S3-02
IPB120N04S4-01 ..IPD60R385CP
IPD60R3K3C6 ..IPP06CN10NG
IPP070N06LG ..IPW90R340C3
IPW90R500C3 ..IRF3711ZL
IRF3711ZS ..IRF6724M
IRF6725M ..IRF7754G
IRF7755G ..IRFB3206G
IRFB3207 ..IRFI4410Z
IRFI4410ZG ..IRFP350FI
IRFP350LC ..IRFS152
IRFS153 ..IRFSL3507
IRFSL3607 ..IRFZ34N
IRFZ34NL ..IRLL2705
IRLL3303 ..IXBH15N170
IXBH20N140 ..IXFH52N50P2
IXFH58N20 ..IXFN100N50P
IXFN100N50Q3 ..IXFR58N20Q
IXFR64N50P ..IXFX50N50
IXFX520N075T2 ..IXTC26N50P
IXTC280N055T ..IXTK140N20P
IXTK140N30P ..IXTP60N10TM
IXTP60N20T ..IXTV22N50PS
IXTV22N60P ..KF6N60I
KF70N06F ..KP731A
KP731B ..MMBF4119
MMBF4391 ..MTD6N15
MTD6N20E ..MTN5N60I3
MTN5N60J3 ..NDD04N60Z
NDD05N50Z ..NTGD4167C
NTGS3130N ..P1086
P1087 ..PMN20EN
PMN23UN ..PSMN7R0-30YLC
PSMN7R0-40LS ..RFP12N06RLE
RFP12N10L ..RJK2009DPM
RJK2017DPE ..RSR020N06
RSR025N03 ..SDF6N60JAB
SDF6N90 ..SGSP492
SGSP574 ..SML1002RAN
SML1002RBN ..SML80H14
SML80J25 ..SPW35N60C3
SPW35N60CFD ..SSI5N80A
SSI5N90A ..SSM6L11TU
SSM6L12TU ..STB12NK80Z
STB12NM50 ..STD2NK70Z
STD2NK90Z ..STF25NM60ND
STF26NM60N ..STL25N15F3
STL25N15F4 ..STP34NM60ND
STP35N65M5 ..STP95N3LLH6
STP95N4F3 ..STW34NM60ND
STW35N65M5 ..TK20J60U
TK20P04M1 ..TPC8076
TPC8078 ..TPCP8005-H
TPCP8006 ..UTD484
UTF1404 ..ZXM61P03F
ZXM62N02E6 ..ZXMS6006SG
 
IRF740 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF740 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF740

Type of IRF740 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 125

Maximum drain-source voltage |Uds|, V: 400

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 10

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF740 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1450

Maximum drain-source on-state resistance (Rds), Ohm: 0.55

Package: TO220

Equivalent transistors for IRF740

IRF740 PDF doc:

1.1. irf740s.pdf Size:93K _st

IRF740
IRF740
IRF740S ? N - CHANNEL 400V - 0.48 ? - 10A- D2PAK PowerMESH? MOSFET TYPE VDSS RDS(on) ID IRF740S 400 V < 0.55 ? 10 A TYPICAL R = 0.48 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 FOR THROUGH-HOLE VERSION CONTACT 1 SALES OFFICE D2PAK DESCRIPTION TO-263 This power MOSFET is designed using the (Suffix ”T4”) company’s consolidated strip layout-based MESH OVERLAY? process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS INTERNAL SCHEMATIC DIAGRAM HIGH CURRENT SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V = 0) 400 V DS GS VDGR 400 V Drain- gate Voltage (R = 20 k?) GS VGS Gate-source Voltage ± 20 V o I Drain Current (continuous) at T = 25 C10 A D c o I Drain Cu

1.2. irf740.pdf Size:93K _st

IRF740
IRF740
IRF740 ? N - CHANNEL 400V - 0.48 ? - 10 A - TO-220 PowerMESH? MOSFET TYPE VDSS RDS(on) ID IRF740 400 V < 0.55 ? 10 A TYPICAL R = 0.48 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using the 3 2 company’s consolidated strip layout-based MESH 1 OVERLAY process. This technology matches ? TO-220 and improves the performances compared with standard parts from various sources. APPLICATIONS HIGH CURRENT SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) INTERNAL SCHEMATIC DIAGRAM DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 400 V VDGR 400 V Drain- gate Voltage (RGS = 20 k ) ? VGS Gate-source Voltage ± 20 V o ID Drain Current (continuous) at Tc = 25 C10 A o ID Drain Current (continuous) at Tc = 100 C6.3 A IDM(•) Drain Current (pulsed)

1.3. irf740-1-2-3-fi.pdf Size:482K _st2

IRF740
IRF740
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1.4. irf740b.pdf Size:894K _fairchild_semi

IRF740
IRF740
November 2001 IRF740B/IRFS740B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 10A, 400V, RDS(on) = 0.54? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 41 nC) planar, DMOS technology. • Low Crss ( typical 35 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter IRF740B IRFS740B Units VDSS Drain-Source Voltage 400 V ID Drain Current - Continuous (TC = 25°C) 10 10 * A - Continuous (T

1.5. irf740.pdf Size:154K _fairchild_semi

IRF740
IRF740

1.6. irf740spbf.pdf Size:951K _international_rectifier

IRF740
IRF740
PD - 95204 IRF740SPbF • Lead-Free 4/29/04 Document Number: 91055 www.vishay.com 1 IRF740SPbF Document Number: 91055 www.vishay.com 2 IRF740SPbF Document Number: 91055 www.vishay.com 3 IRF740SPbF Document Number: 91055 www.vishay.com 4 IRF740SPbF Document Number: 91055 www.vishay.com 5 IRF740SPbF Document Number: 91055 www.vishay.com 6 IRF740SPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) I I I I I I I I I I = I OR I I I I = I I = = I Document Number: 91055 www.vishay.com 7 IRF740SPbF D2Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 1.60 (.063) 4.10 (.161) 1.50 (.059) 0.368 (.0145) 3.90 (.153) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 11.60 (.457) 11.40 (.449) 1.65 (.065) 24.30 (.957) 15.42 (.609) 23.90 (.941) 15.22 (.601) TRL 1.75 (.069) 10.90 (.429) 1.25 (.049) 4.72 (.136) 10.70

1.7. irf7403.pdf Size:116K _international_rectifier

IRF740
IRF740
PD - 9.1245B PRELIMINARY IRF7403 HEXFET® Power MOSFET Generation V Technology A Ultra Low On-Resistance A 1 8 S D N-Channel Mosfet VDSS = 30V 2 7 S D Surface Mount 3 6 Available in Tape & Reel S D Dynamic dv/dt Rating 4 5 G D RDS(on) = 0.022? Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in SO-8 an application with dramatically reduced board space. The pack

1.8. irf740as-l.pdf Size:304K _international_rectifier

IRF740
IRF740
PD- 95532 SMPS MOSFET IRF740AS/LPbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55? 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and D 2 TO-262 Pak Avalanche Voltage and Current l Effective Coss specified ( See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V† 10 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V† 6.3 A IDM Pulsed Drain Current † 40 PD @TA = 25°C Power Dissipation 3.1 W PD @TC = 25°C Power Dissipation 125 Linear Derating Factor 1.0 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt ?† 5.9 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from cas

1.9. irf740lc.pdf Size:174K _international_rectifier

IRF740
IRF740

1.10. irf740a.pdf Size:196K _international_rectifier

IRF740
IRF740
PD- 94828 SMPS MOSFET IRF740APbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55? 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current G D S TO-220AB l Effective Coss specified ( See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 10 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.3 A IDM Pulsed Drain Current 40 PD @TC = 25°C Power Dissipation 125 W Linear Derating Factor 1.0 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt ? 5.9 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbf•in

1.11. irf7406.pdf Size:114K _international_rectifier

IRF740
IRF740
PD - 9.1247C IRF7406 PRELIMINARY HEXFET® Power MOSFET Generation V Technology A 1 8 Ultra Low On-Resistance S D VDSS = -30V 2 7 P-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.045? Dynamic dv/dt Rating Fast Switching Top V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized SO-8 leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. Th

1.12. irf7402.pdf Size:136K _international_rectifier

IRF740
IRF740
PD - 93851A IRF7402 HEXFET® Power MOSFET Generation V Technology A A Ultra Low On-Resistance 1 8 S D N-Channel MOSFET VDSS = 20V 2 7 S D Very Small SOIC Package 3 6 S D Low Profile (<1.1mm) 4 Available in Tape & Reel 5 G D RDS(on) = 0.035? Fast Switching Top View Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized SO-8 leadframe for enhanced thermal characterstics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduce

1.13. irf740as.pdf Size:135K _international_rectifier

IRF740
IRF740
PD- 92005 SMPS MOSFET IRF740AS/L HEXFET® Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 400V 0.55? 10A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 Pak Avalanche Voltage and Current Effective Coss specified ( See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 10 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.3 A IDM Pulsed Drain Current 40 PD @TA = 25°C Power Dissipation 3.1 W PD @TC = 25°C Power Dissipation 125 Linear Derating Factor 1.0 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 5.9 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Typical SMPS Topologies:

1.14. irf740lcpbf.pdf Size:1404K _international_rectifier

IRF740
IRF740
PD - 94880 IRF740LCPbF • Lead-Free 12/10/03 Document Number: 91052 www.vishay.com 1 IRF740LCPbF Document Number: 91052 www.vishay.com 2 IRF740LCPbF Document Number: 91052 www.vishay.com 3 IRF740LCPbF Document Number: 91052 www.vishay.com 4 IRF740LCPbF Document Number: 91052 www.vishay.com 5 IRF740LCPbF Document Number: 91052 www.vishay.com 6 IRF740LCPbF Document Number: 91052 www.vishay.com 7 IRF740LCPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (

1.15. irf740s.pdf Size:171K _international_rectifier

IRF740
IRF740

1.16. irf7404.pdf Size:163K _international_rectifier

IRF740
IRF740
PD - 9.1246C IRF7404 HEXFET® Power MOSFET Generation V Technology A 1 8 S D Ultra Low On-Resistance VDSS = -20V 2 7 P-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.040? Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and SO-8 multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is

1.17. irf740.pdf Size:926K _international_rectifier

IRF740
IRF740
PD - 94872 IRF740PbF • Lead-Free 12/5/03 Document Number: 91053 www.vishay.com 1 IRF740PbF Document Number: 91053 www.vishay.com 2 IRF740PbF Document Number: 91053 www.vishay.com 3 IRF740PbF Document Number: 91053 www.vishay.com 4 IRF740PbF Document Number: 91053 www.vishay.com 5 IRF740PbF Document Number: 91053 www.vishay.com 6 IRF740PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) 1.32 (.052) - A - 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK MIN 1 - GATE 1 2 3 2 - DRAIN 1- GATE 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045)

1.18. irf7401.pdf Size:118K _international_rectifier

IRF740
IRF740
PD - 9.1244C IRF7401 HEXFET® Power MOSFET Generation V Technology A A 1 8 Ultra Low On-Resistance S D VDSS = 20V 2 7 N-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.022? Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized SO-8 leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is

1.19. irf740a.pdf Size:937K _samsung

IRF740
IRF740
Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.55 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 400 o Continuous Drain Current (TC=25 C) 10 ID A o C Continuous Drain Current (TC=100 ) 6.3 IDM Drain Current-Pulsed 1 40 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 457 O IAR Avalanche Current 1 10 A O EAR Repetitive Avalanche Energy 1 mJ 13.4 O 3 dv/dt Peak Diode Recovery dv/dt V/ns 4.0 O Total Power Dissipation (TC=25 oC ) 134 W PD Linear Derating Factor W/ o 1.08 C Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 Purpo

1.20. irf740_sihf740.pdf Size:196K _vishay

IRF740
IRF740
IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 400 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.55 RoHS* • Fast Switching Qg (Max.) (nC) 63 COMPLIANT • Ease of Paralleling Qgs (nC) 9.0 Qgd (nC) 32 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation S D levels to approximately 50 W. The low thermal resistance G S and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF740PbF Lead (Pb)-free SiHF740-E3 IRF740 SnPb SiHF740 ABSOLUTE M

1.21. irf740a_sihf740a.pdf Size:205K _vishay

IRF740
IRF740
IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 400 Requirement Available RDS(on) (?)VGS = 10 V 0.55 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 36 COMPLIANT Ruggedness Qgs (nC) 9.9 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 16 and Current Configuration Single • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC D TO-220AB APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply G • High Speed Power Switching S TYPICAL SMPS TOPOLOGIES D G S • Single Transistor Flyback Xfmr. Reset N-Channel MOSFET • Single Transistor Forward Xfmr. Reset (Both for US Line Input Only) ORDERING INFORMATION Package TO-220AB IRF740APbF Lead (Pb)-free SiHF740A-E3 IRF740A SnPb SiHF740A ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 400 V

1.22. irf740lc_sihf740lc.pdf Size:197K _vishay

IRF740
IRF740
IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Ultra Low Gate Charge VDS (V) 400 • Reduced Gate Drive Requirement Available RDS(on) (?)VGS = 10 V 0.55 • Enhanced 30 V VGS Rating RoHS* COMPLIANT Qg (Max.) (nC) 39 • Reduced Ciss, Coss, Crss Qgs (nC) 10 • Extremely High Frequency Operation Qgd (nC) 19 • Repetitive Avalanche Rated • Compliant to RoHS Directive 2002/95/EC Configuration Single D DESCRIPTION This new series of low charge Power MOSFETs achieve TO-220AB significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, G allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high S frequency applications. Frequencies of a few MHz at high D G S current are possible using the new Low Charge MOSFETs. N-Channel MOSFET

1.23. irf740.pdf Size:246K _inchange_semiconductor

IRF740
IRF740
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF740 DESCRIPTION ·Drain Current –ID= 10A@ TC=25? ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55?(Max) ·Fast Switching Speed APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 400 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25? 10 A Ptot Total Dissipation@TC=25? 125 W Tj Max. Operating Junction Temperature 150 ? Tstg Storage Temperature Range -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT ?/W Rth j-c Thermal Resistance,Junction to Case 1.0 isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc N-Channel Mosfet

1.24. hirf740.pdf Size:48K _hsmc

IRF740
IRF740
Spec. No. : MOS200512 HI-SINCERITY Issued Date : 2005.09.01 Revised Date : 2005.09.22 MICROELECTRONICS CORP. Page No. : 1/4 HIRF740 Series Pin Assignment HIRF740 / HIRF740F Tab N-Channel Power MOSFET (400V, 10A) 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Description Pin 3: Source This N-Channel MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- 3 effectiveness. 2 1 Features 3-Lead Plastic TO-220FP Package Code: F • Dynamic dv/dt Rating Pin 1: Gate • Repetitive Avalanche Rated Pin 2: Drain • Fast Switching Pin 3: Source • Ease of Paralleling • Simple Drive Requirements 3 2 1 Thermal Characteristics HIRF740 Series Symbol Symbol Parameter Value Units D TO-220AB 1.71 Thermal Resistance R?JC Junction to Case Max. °C/W TO-220FP 3.3 G Thermal Resistance S R?JA Junction to Ambient Max. 62 °C/W Absolute Maximum Ratings Symbol Paramet

See also transistors datasheet: IRF732 , IRF7321D2 , IRF7322D1 , IRF7324D1 , IRF733 , IRF734 , IRF7353D1 , IRF737LC , IRF1404 , IRF7401 , IRF7403 , IRF7404 , IRF7406 , IRF740A , IRF740AL , IRF740AS , IRF740FI .

Keywords

 IRF740 Datasheet  IRF740 Datenblatt  IRF740 RoHS  IRF740 Distributor
 IRF740 Application Notes  IRF740 Component  IRF740 Circuit  IRF740 Schematic
 IRF740 Equivalent  IRF740 Cross Reference  IRF740 Data Sheet  IRF740 Fiche Technique

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