MOSFET Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF740
  IRF740
  IRF740
  IRF740
 
IRF740
  IRF740
  IRF740
  IRF740
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553L
2SJ553S ..2SK1516
2SK1517 ..2SK2136
2SK2137 ..2SK2735
2SK2735L ..2SK3125
2SK3126 ..2SK357
2SK3582CT ..2SK4195LS
2SK4196LS ..3N159
3N161 ..40821
40822 ..AO4496
AO4498 ..AOC2423
AOC2800 ..AON2701
AON2705 ..AON7752
AON7754 ..AOU4N60
AOU4S60 ..AP13P15GP-HF
AP13P15GS-HF ..AP30T10GP-HF
AP30T10GS-HF ..AP4800AGM-HF
AP4800BGM-HF ..AP9408AGH
AP9408AGI ..AP9930AGM
AP9930GM-HF ..APT1004RGN
APT1004RKN ..APT50M50L2LL
APT50M50PVR ..AUIRF3710ZS
AUIRF3805 ..AUIRLR3915
AUIRLS3034 ..BLF202
BLF2043F ..BSB028N06NN3G
BSB053N03LPG ..BSS123
BSS123A ..BUK653R7-30C
BUK654R0-75C ..BUK9217-75B
BUK9219-55A ..BUZ50A-TO220M
BUZ50ASM ..CED20P10
CED21A2 ..CEP02N7G
CEP02N9 ..CPH3355
CPH3356 ..DMP210DUDJ
DMP210DUFB4 ..FCP9N60N
FCPF11N60 ..FDC642P_F085
FDC645N ..FDM3622
FDM47-06KC5 ..FDMS7608S
FDMS7620S ..FDP8860
FDP8870 ..FDS8926A
FDS8928A ..FQB1P50
FQB22P10 ..FQPF3N25
FQPF3N80C ..FRS240R
FRS244D ..H5N2008P
H5N2301PF ..HAT2080R
HAT2080T ..HUF75332S3S
HUF75333G3 ..IPB022N04LG
IPB023N04NG ..IPD14N06S2-80
IPD15N06S2L-64 ..IPI80N04S3-06
IPI80N04S3-H4 ..IPP90R1K0C3
IPP90R1K2C3 ..IRF2807
IRF2807L ..IRF644
IRF644A ..IRF7450
IRF7451 ..IRF9533
IRF9540 ..IRFH3702
IRFH3707 ..IRFP140
IRFP1405 ..IRFR3411
IRFR3504Z ..IRFS750A
IRFS820 ..IRFW520A
IRFW530A ..IRL8113
IRL8113L ..IRLU3717
IRLU3802 ..IXFH16N120P
IXFH16N50P ..IXFK64N50Q3
IXFK64N60P ..IXFP8N50PM
IXFQ10N80P ..IXFV74N20PS
IXFV96N15P ..IXTA32P20T
IXTA36N30P ..IXTH41N25
IXTH420N04T2 ..IXTP1R4N120P
IXTP1R4N60P ..IXTT16N10D2
IXTT16N20D2 ..JFTJ105
K1109 ..KMB7D0DN40Q
KMB7D0DN40QA ..KU310N10P
KU390N10P ..MTB3D0N03ATH8
MTB40N06E3 ..MTN2510LE3
MTN2510LJ3 ..MTP6405N6
MTP658G6 ..NTD20N03L27
NTD20N06 ..NTR4501
NTR4502P ..PHT6N03LT
PHT6N06LT ..PSMN1R2-30YLC
PSMN1R3-30YL ..RF1S530SM
RF1S540SM ..RJK03E5DPA
RJK03E6DPA ..RQJ0602EGDQS
RQJ0603LGDQA ..SDF08N50
SDF08N60 ..SFP9Z34
SFR2955 ..SMG2306NE
SMG2310A ..SML40J93
SML40L57 ..SPA08N80C3
SPA11N60C3 ..SSDF9504
SSE110N03-03P ..SSM3J16TE
SSM3J304T ..SSM6P05FU
SSM6P09FU ..STB19NF20
STB200N4F3 ..STD3N25-1
STD3N25T4 ..STF26NM60N
STF28NM50N ..STK830P
STK900 ..STP14NK50Z
STP14NK60Z ..STP5N30LFI
STP5N50 ..STS4DNFS30L
STS4DPF20L ..STU616S
STU618S ..TF252TH
TF256 ..TK80S04K3L
TK80S06K3L ..TPCA8046-H
TPCA8047-H ..UP672
UP9971 ..WTC2305
WTC2305DS ..ZXMP10A16K
ZXMP10A17E6 ..ZXMS6006SG
 
IRF740 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF740 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF740

Type of IRF740 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 125

Maximum drain-source voltage |Uds|, V: 400

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 10

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF740 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1450

Maximum drain-source on-state resistance (Rds), Ohm: 0.55

Package: TO220

Equivalent transistors for IRF740 - Cross-Reference Search

IRF740 PDF doc:

1.1. irf740s.pdf Size:93K _st

IRF740
IRF740
IRF740S ? N - CHANNEL 400V - 0.48 ? - 10A- D2PAK PowerMESH? MOSFET TYPE VDSS RDS(on) ID IRF740S 400 V < 0.55 ? 10 A TYPICAL R = 0.48 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 FOR THROUGH-HOLE VERSION CONTACT 1 SALES OFFICE D2PAK DESCRIPTION TO-263 This power MOSFET is designed using the (Suffix ”T4”) company’s consolidated strip layout-based MESH OVERLAY? process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS INTERNAL SCHEMATIC DIAGRAM HIGH CURRENT SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V = 0) 400 V DS GS VDGR 400 V Drain- gate Voltage (R = 20 k?) GS VGS Gate-source Voltage ± 20 V o I Drain Current (continuous) at T = 25 C10 A D c o I Drain Cu

1.2. irf740.pdf Size:93K _st

IRF740
IRF740
IRF740 ? N - CHANNEL 400V - 0.48 ? - 10 A - TO-220 PowerMESH? MOSFET TYPE VDSS RDS(on) ID IRF740 400 V < 0.55 ? 10 A TYPICAL R = 0.48 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using the 3 2 company’s consolidated strip layout-based MESH 1 OVERLAY process. This technology matches ? TO-220 and improves the performances compared with standard parts from various sources. APPLICATIONS HIGH CURRENT SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) INTERNAL SCHEMATIC DIAGRAM DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 400 V VDGR 400 V Drain- gate Voltage (RGS = 20 k ) ? VGS Gate-source Voltage ± 20 V o ID Drain Current (continuous) at Tc = 25 C10 A o ID Drain Current (continuous) at Tc = 100 C6.3 A IDM(•) Drain Current (pulsed)

1.3. irf740-1-2-3-fi.pdf Size:482K _st2

IRF740
IRF740
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1.4. irf740b.pdf Size:894K _fairchild_semi

IRF740
IRF740
November 2001 IRF740B/IRFS740B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 10A, 400V, RDS(on) = 0.54? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 41 nC) planar, DMOS technology. • Low Crss ( typical 35 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter IRF740B IRFS740B Units VDSS Drain-Source Voltage 400 V ID Drain Current - Continuous (TC = 25°C) 10 10 * A - Continuous (T

1.5. irf740.pdf Size:154K _fairchild_semi

IRF740
IRF740

1.6. irf740spbf.pdf Size:951K _international_rectifier

IRF740
IRF740
PD - 95204 IRF740SPbF • Lead-Free 4/29/04 Document Number: 91055 www.vishay.com 1 IRF740SPbF Document Number: 91055 www.vishay.com 2 IRF740SPbF Document Number: 91055 www.vishay.com 3 IRF740SPbF Document Number: 91055 www.vishay.com 4 IRF740SPbF Document Number: 91055 www.vishay.com 5 IRF740SPbF Document Number: 91055 www.vishay.com 6 IRF740SPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) I I I I I I I I I I = I OR I I I I = I I = = I Document Number: 91055 www.vishay.com 7 IRF740SPbF D2Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 1.60 (.063) 4.10 (.161) 1.50 (.059) 0.368 (.0145) 3.90 (.153) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 11.60 (.457) 11.40 (.449) 1.65 (.065) 24.30 (.957) 15.42 (.609) 23.90 (.941) 15.22 (.601) TRL 1.75 (.069) 10.90 (.429) 1.25 (.049) 4.72 (.136) 10.70

1.7. irf7403.pdf Size:116K _international_rectifier

IRF740
IRF740
PD - 9.1245B PRELIMINARY IRF7403 HEXFET® Power MOSFET Generation V Technology A Ultra Low On-Resistance A 1 8 S D N-Channel Mosfet VDSS = 30V 2 7 S D Surface Mount 3 6 Available in Tape & Reel S D Dynamic dv/dt Rating 4 5 G D RDS(on) = 0.022? Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in SO-8 an application with dramatically reduced board space. The pack

1.8. irf740as-l.pdf Size:304K _international_rectifier

IRF740
IRF740
PD- 95532 SMPS MOSFET IRF740AS/LPbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55? 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and D 2 TO-262 Pak Avalanche Voltage and Current l Effective Coss specified ( See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V† 10 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V† 6.3 A IDM Pulsed Drain Current † 40 PD @TA = 25°C Power Dissipation 3.1 W PD @TC = 25°C Power Dissipation 125 Linear Derating Factor 1.0 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt ?† 5.9 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from cas

1.9. irf740lc.pdf Size:174K _international_rectifier

IRF740
IRF740

1.10. irf740a.pdf Size:196K _international_rectifier

IRF740
IRF740
PD- 94828 SMPS MOSFET IRF740APbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55? 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current G D S TO-220AB l Effective Coss specified ( See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 10 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.3 A IDM Pulsed Drain Current 40 PD @TC = 25°C Power Dissipation 125 W Linear Derating Factor 1.0 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt ? 5.9 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbf•in

1.11. irf7406.pdf Size:114K _international_rectifier

IRF740
IRF740
PD - 9.1247C IRF7406 PRELIMINARY HEXFET® Power MOSFET Generation V Technology A 1 8 Ultra Low On-Resistance S D VDSS = -30V 2 7 P-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.045? Dynamic dv/dt Rating Fast Switching Top V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized SO-8 leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. Th

1.12. irf7402.pdf Size:136K _international_rectifier

IRF740
IRF740
PD - 93851A IRF7402 HEXFET® Power MOSFET Generation V Technology A A Ultra Low On-Resistance 1 8 S D N-Channel MOSFET VDSS = 20V 2 7 S D Very Small SOIC Package 3 6 S D Low Profile (<1.1mm) 4 Available in Tape & Reel 5 G D RDS(on) = 0.035? Fast Switching Top View Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized SO-8 leadframe for enhanced thermal characterstics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduce

1.13. irf740as.pdf Size:135K _international_rectifier

IRF740
IRF740
PD- 92005 SMPS MOSFET IRF740AS/L HEXFET® Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 400V 0.55? 10A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 Pak Avalanche Voltage and Current Effective Coss specified ( See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 10 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.3 A IDM Pulsed Drain Current 40 PD @TA = 25°C Power Dissipation 3.1 W PD @TC = 25°C Power Dissipation 125 Linear Derating Factor 1.0 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 5.9 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Typical SMPS Topologies:

1.14. irf740lcpbf.pdf Size:1404K _international_rectifier

IRF740
IRF740
PD - 94880 IRF740LCPbF • Lead-Free 12/10/03 Document Number: 91052 www.vishay.com 1 IRF740LCPbF Document Number: 91052 www.vishay.com 2 IRF740LCPbF Document Number: 91052 www.vishay.com 3 IRF740LCPbF Document Number: 91052 www.vishay.com 4 IRF740LCPbF Document Number: 91052 www.vishay.com 5 IRF740LCPbF Document Number: 91052 www.vishay.com 6 IRF740LCPbF Document Number: 91052 www.vishay.com 7 IRF740LCPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (

1.15. irf740s.pdf Size:171K _international_rectifier

IRF740
IRF740

1.16. irf7404.pdf Size:163K _international_rectifier

IRF740
IRF740
PD - 9.1246C IRF7404 HEXFET® Power MOSFET Generation V Technology A 1 8 S D Ultra Low On-Resistance VDSS = -20V 2 7 P-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.040? Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and SO-8 multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is

1.17. irf740.pdf Size:926K _international_rectifier

IRF740
IRF740
PD - 94872 IRF740PbF • Lead-Free 12/5/03 Document Number: 91053 www.vishay.com 1 IRF740PbF Document Number: 91053 www.vishay.com 2 IRF740PbF Document Number: 91053 www.vishay.com 3 IRF740PbF Document Number: 91053 www.vishay.com 4 IRF740PbF Document Number: 91053 www.vishay.com 5 IRF740PbF Document Number: 91053 www.vishay.com 6 IRF740PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) 1.32 (.052) - A - 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK MIN 1 - GATE 1 2 3 2 - DRAIN 1- GATE 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045)

1.18. irf7401.pdf Size:118K _international_rectifier

IRF740
IRF740
PD - 9.1244C IRF7401 HEXFET® Power MOSFET Generation V Technology A A 1 8 Ultra Low On-Resistance S D VDSS = 20V 2 7 N-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.022? Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized SO-8 leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is

1.19. irf740a.pdf Size:937K _samsung

IRF740
IRF740
Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.55 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 400 o Continuous Drain Current (TC=25 C) 10 ID A o C Continuous Drain Current (TC=100 ) 6.3 IDM Drain Current-Pulsed 1 40 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 457 O IAR Avalanche Current 1 10 A O EAR Repetitive Avalanche Energy 1 mJ 13.4 O 3 dv/dt Peak Diode Recovery dv/dt V/ns 4.0 O Total Power Dissipation (TC=25 oC ) 134 W PD Linear Derating Factor W/ o 1.08 C Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 Purpo

1.20. irfp340-343_irf740-743.pdf Size:191K _samsung

IRF740
IRF740


1.21. irf740_sihf740.pdf Size:196K _vishay

IRF740
IRF740
IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 400 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.55 RoHS* • Fast Switching Qg (Max.) (nC) 63 COMPLIANT • Ease of Paralleling Qgs (nC) 9.0 Qgd (nC) 32 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation S D levels to approximately 50 W. The low thermal resistance G S and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF740PbF Lead (Pb)-free SiHF740-E3 IRF740 SnPb SiHF740 ABSOLUTE M

1.22. irf740a_sihf740a.pdf Size:205K _vishay

IRF740
IRF740
IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 400 Requirement Available RDS(on) (?)VGS = 10 V 0.55 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 36 COMPLIANT Ruggedness Qgs (nC) 9.9 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 16 and Current Configuration Single • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC D TO-220AB APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply G • High Speed Power Switching S TYPICAL SMPS TOPOLOGIES D G S • Single Transistor Flyback Xfmr. Reset N-Channel MOSFET • Single Transistor Forward Xfmr. Reset (Both for US Line Input Only) ORDERING INFORMATION Package TO-220AB IRF740APbF Lead (Pb)-free SiHF740A-E3 IRF740A SnPb SiHF740A ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 400 V

1.23. irf740lc_sihf740lc.pdf Size:197K _vishay

IRF740
IRF740
IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Ultra Low Gate Charge VDS (V) 400 • Reduced Gate Drive Requirement Available RDS(on) (?)VGS = 10 V 0.55 • Enhanced 30 V VGS Rating RoHS* COMPLIANT Qg (Max.) (nC) 39 • Reduced Ciss, Coss, Crss Qgs (nC) 10 • Extremely High Frequency Operation Qgd (nC) 19 • Repetitive Avalanche Rated • Compliant to RoHS Directive 2002/95/EC Configuration Single D DESCRIPTION This new series of low charge Power MOSFETs achieve TO-220AB significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, G allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high S frequency applications. Frequencies of a few MHz at high D G S current are possible using the new Low Charge MOSFETs. N-Channel MOSFET

1.24. irf740.pdf Size:246K _inchange_semiconductor

IRF740
IRF740
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF740 DESCRIPTION ·Drain Current –ID= 10A@ TC=25? ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55?(Max) ·Fast Switching Speed APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 400 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25? 10 A Ptot Total Dissipation@TC=25? 125 W Tj Max. Operating Junction Temperature 150 ? Tstg Storage Temperature Range -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT ?/W Rth j-c Thermal Resistance,Junction to Case 1.0 isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc N-Channel Mosfet

1.25. hirf740.pdf Size:48K _hsmc

IRF740
IRF740
Spec. No. : MOS200512 HI-SINCERITY Issued Date : 2005.09.01 Revised Date : 2005.09.22 MICROELECTRONICS CORP. Page No. : 1/4 HIRF740 Series Pin Assignment HIRF740 / HIRF740F Tab N-Channel Power MOSFET (400V, 10A) 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Description Pin 3: Source This N-Channel MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- 3 effectiveness. 2 1 Features 3-Lead Plastic TO-220FP Package Code: F • Dynamic dv/dt Rating Pin 1: Gate • Repetitive Avalanche Rated Pin 2: Drain • Fast Switching Pin 3: Source • Ease of Paralleling • Simple Drive Requirements 3 2 1 Thermal Characteristics HIRF740 Series Symbol Symbol Parameter Value Units D TO-220AB 1.71 Thermal Resistance R?JC Junction to Case Max. °C/W TO-220FP 3.3 G Thermal Resistance S R?JA Junction to Ambient Max. 62 °C/W Absolute Maximum Ratings Symbol Paramet

See also transistors datasheet: IRF732 , IRF7321D2 , IRF7322D1 , IRF7324D1 , IRF733 , IRF734 , IRF7353D1 , IRF737LC , IRF1404 , IRF7401 , IRF7403 , IRF7404 , IRF7406 , IRF740A , IRF740AL , IRF740AS , IRF740FI .

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