MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
IRF7406
  IRF7406
  IRF7406
 
IRF7406
  IRF7406
  IRF7406
 
IRF7406
  IRF7406
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123N3
BSS123W ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FDB070AN06A0
FDB075N15A ..FDD7N20TM
FDD7N25LZ ..FDMS7620S
FDMS7650 ..FDQ7238AS
FDR4410 ..FK10SM-9
FK10UM-10 ..FQI13N50C
FQI27N25 ..FRE160R
FRE260D ..FSL230D
FSL230R ..H7N0308LS
H7N0310LD ..HAT2174H
HAT2174N ..HUF76121P3
HUF76121S3S ..IPB100P03P3L-04
IPB107N20N3G ..IPD600N25N3G
IPD60R1K4C6 ..IPP065N03LG
IPP065N04NG ..IPW65R660CFD
IPW90R120C3 ..IRF3710
IRF3710L ..IRF6713S
IRF6714M ..IRF7705G
IRF7706 ..IRFB23N20D
IRFB260N ..IRFI3205
IRFI3710 ..IRFP340
IRFP340A ..IRFS133
IRFS140 ..IRFS9N60A
IRFSL11N50A ..IRFZ22FI
IRFZ24 ..IRLIZ34A
IRLIZ34G ..ITF86130SK8T
ITF86172SK8T ..IXFH40N50Q
IXFH40N50Q2 ..IXFM42N20
IXFM50N20 ..IXFR40N50Q2
IXFR40N90P ..IXFX38N80Q2
IXFX40N90P ..IXTC13N50
IXTC160N10T ..IXTH96N20P
IXTH96N25T ..IXTP4N80P
IXTP50N085T ..IXTU2N80P
IXTU4N60P ..KF5N53F
KF5N53FS ..KP723A
KP723AM ..MKE11R600DCGFC
MLD1N06CL ..MTC5806Q8
MTC8402S6R ..MTN4N60I3
MTN4N60J3 ..NDB710A
NDC631N ..NTD6414AN
NTD6415AN ..NX3008NBKT
NX3008NBKV ..PMF780SN
PMFPB6532UP ..PSMN5R0-80PS
PSMN5R5-60YS ..RFG30P05
RFG30P06 ..RJK1525DPE
RJK1525DPF ..RSH070N05
RSH070P05 ..SDF230JAB
SDF230JDA ..SFW9530
SFW9540 ..SMK0270D
SMK0270F ..SML601R3AN
SML601R3BN ..SPD04P10PG
SPD04P10PLG ..SSG4499P
SSG4501 ..SSM3K15AFS
SSM3K15AFU ..SSP7431P
SSP7432N ..STB60NF06L
STB60NF10 ..STD60NF3LL
STD60NF55L ..STFW6N120K3
STG2454 ..STM4410A
STM4432 ..STP210N75F6
STP21N05L ..STP6NK50Z
STP6NK60Z ..STT3471P
STT3490N ..STW120NF10
STW12N120K5 ..TK13H90A1
TK13J65U ..TPC8025
TPC8026 ..TPCC8073
TPCC8074 ..UT4430
UT4435 ..ZVN4306A
ZVN4306AV ..ZXMS6006SG
 
IRF7406 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF7406 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF7406

Type of IRF7406 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 2.5

Maximum drain-source voltage |Uds|, V: 30

Maximum gate-source voltage |Ugs|, V: 4.5

Maximum drain current |Id|, A: 5.8

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF7406 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.045

Package: SO8

Equivalent transistors for IRF7406

IRF7406 PDF doc:

1.1. irf7406.pdf Size:114K _international_rectifier

IRF7406
IRF7406
PD - 9.1247C IRF7406 PRELIMINARY HEXFET® Power MOSFET Generation V Technology A 1 8 Ultra Low On-Resistance S D VDSS = -30V 2 7 P-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.045? Dynamic dv/dt Rating Fast Switching Top V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized SO-8 leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. Th

4.1. irf740s.pdf Size:93K _st

IRF7406
IRF7406
IRF740S ? N - CHANNEL 400V - 0.48 ? - 10A- D2PAK PowerMESH? MOSFET TYPE VDSS RDS(on) ID IRF740S 400 V < 0.55 ? 10 A TYPICAL R = 0.48 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 FOR THROUGH-HOLE VERSION CONTACT 1 SALES OFFICE D2PAK DESCRIPTION TO-263 This power MOSFET is designed using the (Suffix ”T4”) company’s consolidated strip layout-based MESH OVERLAY? process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS INTERNAL SCHEMATIC DIAGRAM HIGH CURRENT SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V = 0) 400 V DS GS VDGR 400 V Drain- gate Voltage (R = 20 k?) GS VGS Gate-source Voltage ± 20 V o I Drain Current (continuous) at T = 25 C10 A D c o I Drain Cu

4.2. irf740.pdf Size:93K _st

IRF7406
IRF7406
IRF740 ? N - CHANNEL 400V - 0.48 ? - 10 A - TO-220 PowerMESH? MOSFET TYPE VDSS RDS(on) ID IRF740 400 V < 0.55 ? 10 A TYPICAL R = 0.48 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using the 3 2 company’s consolidated strip layout-based MESH 1 OVERLAY process. This technology matches ? TO-220 and improves the performances compared with standard parts from various sources. APPLICATIONS HIGH CURRENT SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) INTERNAL SCHEMATIC DIAGRAM DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 400 V VDGR 400 V Drain- gate Voltage (RGS = 20 k ) ? VGS Gate-source Voltage ± 20 V o ID Drain Current (continuous) at Tc = 25 C10 A o ID Drain Current (continuous) at Tc = 100 C6.3 A IDM(•) Drain Current (pulsed)

4.3. irf740-1-2-3-fi.pdf Size:482K _st2

IRF7406
IRF7406
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4.4. irf740b.pdf Size:894K _fairchild_semi

IRF7406
IRF7406
November 2001 IRF740B/IRFS740B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 10A, 400V, RDS(on) = 0.54? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 41 nC) planar, DMOS technology. • Low Crss ( typical 35 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter IRF740B IRFS740B Units VDSS Drain-Source Voltage 400 V ID Drain Current - Continuous (TC = 25°C) 10 10 * A - Continuous (T

4.5. irf740.pdf Size:154K _fairchild_semi

IRF7406
IRF7406

4.6. irf740spbf.pdf Size:951K _international_rectifier

IRF7406
IRF7406
PD - 95204 IRF740SPbF • Lead-Free 4/29/04 Document Number: 91055 www.vishay.com 1 IRF740SPbF Document Number: 91055 www.vishay.com 2 IRF740SPbF Document Number: 91055 www.vishay.com 3 IRF740SPbF Document Number: 91055 www.vishay.com 4 IRF740SPbF Document Number: 91055 www.vishay.com 5 IRF740SPbF Document Number: 91055 www.vishay.com 6 IRF740SPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) I I I I I I I I I I = I OR I I I I = I I = = I Document Number: 91055 www.vishay.com 7 IRF740SPbF D2Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 1.60 (.063) 4.10 (.161) 1.50 (.059) 0.368 (.0145) 3.90 (.153) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 11.60 (.457) 11.40 (.449) 1.65 (.065) 24.30 (.957) 15.42 (.609) 23.90 (.941) 15.22 (.601) TRL 1.75 (.069) 10.90 (.429) 1.25 (.049) 4.72 (.136) 10.70

4.7. irf7403.pdf Size:116K _international_rectifier

IRF7406
IRF7406
PD - 9.1245B PRELIMINARY IRF7403 HEXFET® Power MOSFET Generation V Technology A Ultra Low On-Resistance A 1 8 S D N-Channel Mosfet VDSS = 30V 2 7 S D Surface Mount 3 6 Available in Tape & Reel S D Dynamic dv/dt Rating 4 5 G D RDS(on) = 0.022? Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in SO-8 an application with dramatically reduced board space. The pack

4.8. irf740as-l.pdf Size:304K _international_rectifier

IRF7406
IRF7406
PD- 95532 SMPS MOSFET IRF740AS/LPbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55? 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and D 2 TO-262 Pak Avalanche Voltage and Current l Effective Coss specified ( See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V† 10 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V† 6.3 A IDM Pulsed Drain Current † 40 PD @TA = 25°C Power Dissipation 3.1 W PD @TC = 25°C Power Dissipation 125 Linear Derating Factor 1.0 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt ?† 5.9 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from cas

4.9. irf740lc.pdf Size:174K _international_rectifier

IRF7406
IRF7406

4.10. irf740a.pdf Size:196K _international_rectifier

IRF7406
IRF7406
PD- 94828 SMPS MOSFET IRF740APbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55? 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current G D S TO-220AB l Effective Coss specified ( See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 10 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.3 A IDM Pulsed Drain Current 40 PD @TC = 25°C Power Dissipation 125 W Linear Derating Factor 1.0 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt ? 5.9 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbf•in

4.11. irf7402.pdf Size:136K _international_rectifier

IRF7406
IRF7406
PD - 93851A IRF7402 HEXFET® Power MOSFET Generation V Technology A A Ultra Low On-Resistance 1 8 S D N-Channel MOSFET VDSS = 20V 2 7 S D Very Small SOIC Package 3 6 S D Low Profile (<1.1mm) 4 Available in Tape & Reel 5 G D RDS(on) = 0.035? Fast Switching Top View Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized SO-8 leadframe for enhanced thermal characterstics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduce

4.12. irf740as.pdf Size:135K _international_rectifier

IRF7406
IRF7406
PD- 92005 SMPS MOSFET IRF740AS/L HEXFET® Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 400V 0.55? 10A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 Pak Avalanche Voltage and Current Effective Coss specified ( See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 10 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.3 A IDM Pulsed Drain Current 40 PD @TA = 25°C Power Dissipation 3.1 W PD @TC = 25°C Power Dissipation 125 Linear Derating Factor 1.0 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 5.9 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Typical SMPS Topologies:

4.13. irf740lcpbf.pdf Size:1404K _international_rectifier

IRF7406
IRF7406
PD - 94880 IRF740LCPbF • Lead-Free 12/10/03 Document Number: 91052 www.vishay.com 1 IRF740LCPbF Document Number: 91052 www.vishay.com 2 IRF740LCPbF Document Number: 91052 www.vishay.com 3 IRF740LCPbF Document Number: 91052 www.vishay.com 4 IRF740LCPbF Document Number: 91052 www.vishay.com 5 IRF740LCPbF Document Number: 91052 www.vishay.com 6 IRF740LCPbF Document Number: 91052 www.vishay.com 7 IRF740LCPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (

4.14. irf740s.pdf Size:171K _international_rectifier

IRF7406
IRF7406

4.15. irf7404.pdf Size:163K _international_rectifier

IRF7406
IRF7406
PD - 9.1246C IRF7404 HEXFET® Power MOSFET Generation V Technology A 1 8 S D Ultra Low On-Resistance VDSS = -20V 2 7 P-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.040? Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and SO-8 multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is

4.16. irf740.pdf Size:926K _international_rectifier

IRF7406
IRF7406
PD - 94872 IRF740PbF • Lead-Free 12/5/03 Document Number: 91053 www.vishay.com 1 IRF740PbF Document Number: 91053 www.vishay.com 2 IRF740PbF Document Number: 91053 www.vishay.com 3 IRF740PbF Document Number: 91053 www.vishay.com 4 IRF740PbF Document Number: 91053 www.vishay.com 5 IRF740PbF Document Number: 91053 www.vishay.com 6 IRF740PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) 1.32 (.052) - A - 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK MIN 1 - GATE 1 2 3 2 - DRAIN 1- GATE 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045)

4.17. irf7401.pdf Size:118K _international_rectifier

IRF7406
IRF7406
PD - 9.1244C IRF7401 HEXFET® Power MOSFET Generation V Technology A A 1 8 Ultra Low On-Resistance S D VDSS = 20V 2 7 N-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.022? Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized SO-8 leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is

4.18. irf740a.pdf Size:937K _samsung

IRF7406
IRF7406
Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.55 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 400 o Continuous Drain Current (TC=25 C) 10 ID A o C Continuous Drain Current (TC=100 ) 6.3 IDM Drain Current-Pulsed 1 40 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 457 O IAR Avalanche Current 1 10 A O EAR Repetitive Avalanche Energy 1 mJ 13.4 O 3 dv/dt Peak Diode Recovery dv/dt V/ns 4.0 O Total Power Dissipation (TC=25 oC ) 134 W PD Linear Derating Factor W/ o 1.08 C Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 Purpo

4.19. irfp340-343_irf740-743.pdf Size:191K _samsung

IRF7406
IRF7406


4.20. irf740_sihf740.pdf Size:196K _vishay

IRF7406
IRF7406
IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 400 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.55 RoHS* • Fast Switching Qg (Max.) (nC) 63 COMPLIANT • Ease of Paralleling Qgs (nC) 9.0 Qgd (nC) 32 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation S D levels to approximately 50 W. The low thermal resistance G S and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF740PbF Lead (Pb)-free SiHF740-E3 IRF740 SnPb SiHF740 ABSOLUTE M

4.21. irf740a_sihf740a.pdf Size:205K _vishay

IRF7406
IRF7406
IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 400 Requirement Available RDS(on) (?)VGS = 10 V 0.55 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 36 COMPLIANT Ruggedness Qgs (nC) 9.9 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 16 and Current Configuration Single • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC D TO-220AB APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply G • High Speed Power Switching S TYPICAL SMPS TOPOLOGIES D G S • Single Transistor Flyback Xfmr. Reset N-Channel MOSFET • Single Transistor Forward Xfmr. Reset (Both for US Line Input Only) ORDERING INFORMATION Package TO-220AB IRF740APbF Lead (Pb)-free SiHF740A-E3 IRF740A SnPb SiHF740A ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 400 V

4.22. irf740lc_sihf740lc.pdf Size:197K _vishay

IRF7406
IRF7406
IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Ultra Low Gate Charge VDS (V) 400 • Reduced Gate Drive Requirement Available RDS(on) (?)VGS = 10 V 0.55 • Enhanced 30 V VGS Rating RoHS* COMPLIANT Qg (Max.) (nC) 39 • Reduced Ciss, Coss, Crss Qgs (nC) 10 • Extremely High Frequency Operation Qgd (nC) 19 • Repetitive Avalanche Rated • Compliant to RoHS Directive 2002/95/EC Configuration Single D DESCRIPTION This new series of low charge Power MOSFETs achieve TO-220AB significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, G allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high S frequency applications. Frequencies of a few MHz at high D G S current are possible using the new Low Charge MOSFETs. N-Channel MOSFET

4.23. irf740.pdf Size:246K _inchange_semiconductor

IRF7406
IRF7406
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF740 DESCRIPTION ·Drain Current –ID= 10A@ TC=25? ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55?(Max) ·Fast Switching Speed APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 400 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25? 10 A Ptot Total Dissipation@TC=25? 125 W Tj Max. Operating Junction Temperature 150 ? Tstg Storage Temperature Range -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT ?/W Rth j-c Thermal Resistance,Junction to Case 1.0 isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc N-Channel Mosfet

4.24. hirf740.pdf Size:48K _hsmc

IRF7406
IRF7406
Spec. No. : MOS200512 HI-SINCERITY Issued Date : 2005.09.01 Revised Date : 2005.09.22 MICROELECTRONICS CORP. Page No. : 1/4 HIRF740 Series Pin Assignment HIRF740 / HIRF740F Tab N-Channel Power MOSFET (400V, 10A) 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Description Pin 3: Source This N-Channel MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- 3 effectiveness. 2 1 Features 3-Lead Plastic TO-220FP Package Code: F • Dynamic dv/dt Rating Pin 1: Gate • Repetitive Avalanche Rated Pin 2: Drain • Fast Switching Pin 3: Source • Ease of Paralleling • Simple Drive Requirements 3 2 1 Thermal Characteristics HIRF740 Series Symbol Symbol Parameter Value Units D TO-220AB 1.71 Thermal Resistance R?JC Junction to Case Max. °C/W TO-220FP 3.3 G Thermal Resistance S R?JA Junction to Ambient Max. 62 °C/W Absolute Maximum Ratings Symbol Paramet

See also transistors datasheet: IRF733 , IRF734 , IRF7353D1 , IRF737LC , IRF740 , IRF7401 , IRF7403 , IRF7404 , BUZ11 , IRF740A , IRF740AL , IRF740AS , IRF740FI , IRF740S , IRF741 , IRF7413 , IRF7413A .

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 IRF7406 Application Notes  IRF7406 Component  IRF7406 Circuit  IRF7406 Schematic
 IRF7406 Equivalent  IRF7406 Cross Reference  IRF7406 Data Sheet  IRF7406 Fiche Technique

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