All MOSFET. IRF740A Datasheet

 

IRF740A MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF740A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 134 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Drain Current |Id|: 10 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 1180 pF

Maximum Drain-Source On-State Resistance (Rds): 0.55 Ohm

Package: TO220

IRF740A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF740A PDF doc:

1.1. irf740as-l.pdf Size:304K _international_rectifier

IRF740A
IRF740A

PD- 95532 SMPS MOSFET IRF740AS/LPbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55? 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and D 2 TO-262

1.2. irf740a.pdf Size:196K _international_rectifier

IRF740A
IRF740A

PD- 94828 SMPS MOSFET IRF740APbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55? 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Volt

1.3. irf740as.pdf Size:135K _international_rectifier

IRF740A
IRF740A

PD- 92005 SMPS MOSFET IRF740AS/L HEXFET® Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 400V 0.55? 10A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 Pak Avalanche Volt

1.4. irf740a.pdf Size:937K _samsung

IRF740A
IRF740A

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.55 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Unit

1.5. irf740a_sihf740a.pdf Size:205K _vishay

IRF740A
IRF740A

IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 400 Requirement Available RDS(on) (?)VGS = 10 V 0.55 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 36 COMPLIANT Ruggedness Qgs (nC) 9.9 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 16 and Current Configuration Singl

Datasheet: IRF734 , IRF7353D1 , IRF737LC , IRF740 , IRF7401 , IRF7403 , IRF7404 , IRF7406 , RFP50N06 , IRF740AL , IRF740AS , IRF740FI , IRF740S , IRF741 , IRF7413 , IRF7413A , IRF7416 .

 


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