IRF744 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF744

Type of IRF744 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 125

Maximum drain-source voltage |Uds|, V: 450V

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 8.8

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF744 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.63

Package: TO220AB

Equivalent transistors for IRF744

IRF744 PDF documents for downloads:

1.1. irf744.pdf Size:207K _international_rectifier

1.2. irf744pbf.pdf Size:243K _international_rectifier

PD - 95627 IRF744PbF • Lead-Free 8/3/04 Document Number: 91056 www.vishay.com 1 IRF744PbF Document Number: 91056 www.vishay.com 2 IRF744PbF Document Number: 91056 www.vishay.com 3 IRF744PbF Document Number: 91056 www.vishay.com 4 IRF744PbF Document Number: 91056 www.vishay.com 5 IRF744PbF Document Number: 91056 www.vishay.com 6 IRF744PbF Document Number: 91056 www.vishay.com 7 IRF744PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.6

5.1. irf740s.pdf Size:93K _st

IRF740S ? N - CHANNEL 400V - 0.48 ? - 10A- D2PAK PowerMESH? MOSFET TYPE VDSS RDS(on) ID IRF740S 400 V < 0.55 ? 10 A TYPICAL R = 0.48 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 FOR THROUGH-HOLE VERSION CONTACT 1 SALES OFFICE D2PAK DESCRIPTION TO-263 This power MOSFET is designed using the (Suffix ”T4”) company’s consolidated strip layout-based MESH OVERLAY? process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS INTERNAL SCHEMATIC DIAGRAM HIGH CURRENT SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V = 0) 400 V DS GS VDGR 400 V Drain- gate Voltage (R = 20 k?) GS VGS Gate-source Voltage ± 20 V o I Drain Current (continuous) at T = 25 C10 A D c o I Drain Cu

5.2. irf740.pdf Size:93K _st

IRF740 ? N - CHANNEL 400V - 0.48 ? - 10 A - TO-220 PowerMESH? MOSFET TYPE VDSS RDS(on) ID IRF740 400 V < 0.55 ? 10 A TYPICAL R = 0.48 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using the 3 2 company’s consolidated strip layout-based MESH 1 OVERLAY process. This technology matches ? TO-220 and improves the performances compared with standard parts from various sources. APPLICATIONS HIGH CURRENT SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) INTERNAL SCHEMATIC DIAGRAM DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 400 V VDGR 400 V Drain- gate Voltage (RGS = 20 k ) ? VGS Gate-source Voltage ± 20 V o ID Drain Current (continuous) at Tc = 25 C10 A o ID Drain Current (continuous) at Tc = 100 C6.3 A IDM(•) Drain Current (pulsed)

5.3. irf740.pdf Size:154K _fairchild_semi

5.4. irf740b.pdf Size:894K _fairchild_semi

November 2001 IRF740B/IRFS740B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 10A, 400V, RDS(on) = 0.54? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 41 nC) planar, DMOS technology. • Low Crss ( typical 35 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter IRF740B IRFS740B Units VDSS Drain-Source Voltage 400 V ID Drain Current - Continuous (TC = 25°C) 10 10 * A - Continuous (T

5.5. irf7421d1.pdf Size:178K _international_rectifier

PD- 91411C IRF7421D1 PRELIMINARY ? ? ? ? FETKY? MOSFET / Schottky Diode Co-packaged HEXFET® Power A A 1 8 MOSFET and Schottky Diode A D VDSS = 30V Ideal For Synchronous Regulator 2 7 S D Applications 3 6 S D RDS(on) = 0.035? Generation V Technology 4 5 G D SO-8 Footprint Schottky Vf = 0.39V Top View Description The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced SO-8 thermal characteristics. The SO-8 package is designed for vapor phase, infrared o

5.6. irf7422d2.pdf Size:119K _international_rectifier

PD- 91412L IRF7422D2 FETKY TM MOSFET & Schottky Diode A Co-packaged HEXFET? Power A 1 8 A D MOSFET and Schottky Diode VDSS = -20V 2 7 Ideal For Buck Regulator Applications A D P-Channel HEXFET 3 6 RDS(on) = 0.09? S D Low VF Schottky Rectifier 4 5 G D Generation 5 Technology Schottky Vf = 0.52V SO-8 Footprint Top View Description The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combinining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. SO-8 The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 pack

5.7. irf7494.pdf Size:567K _international_rectifier

FOR REVIEW ONLY PD - 94641 PD - TBD IRF7494 HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 44m @VGS = 10V 150V 5.2A Benefits A A l Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See App. Note AN1001) 4 5 G D l Fully Characterized Avalanche Voltage SO-8 and Current Top View Absolute Maximum Ratings Parameter Max. Units VDS Drain-to-Source Voltage 150 V VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 5.2 Continuous Drain Current, VGS @ 10V ID @ TA = 100°C 3.7 A Pulsed Drain Current IDM 42 PD @TA = 25°C Maximum Power Dissipation 3.0 W Linear Derating Factor 0.02 W/°C dv/dt Peak Diode Recovery dv/dt 3.0 V/ns TJ Operating Junction and -55 to + 175 °C 150 TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units R?JL Junction-to-Drain Lead ––– 2

5.8. irf740a.pdf Size:196K _international_rectifier

PD- 94828 SMPS MOSFET IRF740APbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55? 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current G D S TO-220AB l Effective Coss specified ( See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 10 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.3 A IDM Pulsed Drain Current 40 PD @TC = 25°C Power Dissipation 125 W Linear Derating Factor 1.0 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt ? 5.9 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbf•in

5.9. irf7420.pdf Size:103K _international_rectifier

PD - 94278 IRF7420 HEXFET® Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -12V 14m?@VGS = -4.5V -11.5A Surface Mount 17.5m?@VGS = -2.5V -9.8A Available in Tape & Reel 26m?@VGS = -1.8V -8.1A Description A These P-Channel HEXFET® Power MOSFETs from 1 8 S D International Rectifier utilize advanced processing 2 7 techniques to achieve the extremely low on-resistance S D per silicon area. This benefit provides the designer 3 6 S D with an extremely efficient device for use in battery and load management applications.. 4 5 G D The SO-8 has been modified through a customized SO-8 Top View leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. Absolute Maximum Ratings

5.10. irf7452.pdf Size:104K _international_rectifier

PD- 93897C IRF7452 SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.060? 4.5A Benefits Low Gate to Drain Charge to Reduce A A 1 8 Switching Losses S D 2 7 Fully Characterized Capacitance Including S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 G D Fully Characterized Avalanche Voltage and Current SO-8 Top View Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.5 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.6 A IDM Pulsed Drain Current 36 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 3.5 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Typical SMPS Topologies Telecom 48V input DC-DC with Half Bridge Primary or Datacom 28V in

5.11. irf7469.pdf Size:114K _international_rectifier

PD- 93951A IRF7469 SMPS MOSFET HEXFET® Power MOSFET Applications ?) VDSS RDS(on) max(m?) ID ?) ?) ?) High Frequency Isolated DC-DC 40V 17@VGS = 10V 9.0A Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for A Computer Processor Power A 1 8 S D Benefits 2 7 S D Ultra-Low Gate Impedance 3 6 S D Very Low RDS(on) 4 5 G D Fully Characterized Avalanche Voltage SO-8 and Current Top View Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 40 V VGS Gate-to-Source Voltage ± 20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 9.0 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 7.3 A IDM Pulsed Drain Current 73 PD @TA = 25°C Maximum Power Dissipation 2.5 W PD @TA = 70°C Maximum Power Dissipation 1.6 W Linear Derating Factor 0.02 mW/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Symbol Parameter Typ. Max. Units R?JL Juncti

5.12. irf7464.pdf Size:168K _international_rectifier

PD- 93895 IRF7464 SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 200V 0.73? 1.2A Benefits Low Gate to Drain Charge to Reduce A A 1 8 S D Switching Losses 2 7 Fully Characterized Capacitance Including S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 G D Fully Characterized Avalanche Voltage SO-8 and Current Top View Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 1.2 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 1.0 A IDM Pulsed Drain Current 10 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 6.8 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Typical SMPS Topologies Telecom 48V input Forward Converter Notes through are on page 8 www.

5.13. irf7455.pdf Size:167K _international_rectifier

PD- 93842B IRF7455 SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High Frequency DC-DC Converters 30V 0.0075? 15A with Synchronous Rectification Benefits Ultra-Low RDS(on) at 4.5V VGS A A Low Charge and Low Gate Impedance to 1 8 S D Reduce Switching Losses 2 7 S D Fully Characterized Avalanche Voltage 3 6 S D and Current 4 5 G D SO-8 Top View Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 30 V VGS Gate-to-Source Voltage ± 12 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 15 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 12 A IDM Pulsed Drain Current 120 PD @TA = 25°C Maximum Power Dissipation 2.5 W PD @TA = 70°C Maximum Power Dissipation 1.6 W Linear Derating Factor 0.02 W/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Parameter Max. Units R?JA Maximum Junction-to-Ambient 50 °C/W Typical SMPS Topologies Telecom 48V Input Converters with Logi

5.14. irf7476.pdf Size:111K _international_rectifier

PD - 94311 IRF7476 HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High Frequency 3.3V and 5V input Point- ? 12V 8.0m? ?@VGS = 4.5V 15A ? ? of-Load Synchronous Buck Converters for Netcom and Computing Applications. Power Management for Netcom, A A Computing and Portable Applications. 1 8 S D 2 7 S D Benefits 3 6 S D Ultra-Low Gate Impedance 4 5 G D Very Low RDS(on) SO-8 Fully Characterized Avalanche Voltage Top View and Current Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 12 V VGS Gate-to-Source Voltage ±12 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 15 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 12 A IDM Pulsed Drain Current 120 PD @TA = 25°C Maximum Power Dissipation 2.5 W PD @TA = 70°C Maximum Power Dissipation 1.6 W Linear Derating Factor 0.02 W/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Symbol Parameter Typ. Max. Units R?JL Junction-t

5.15. irf7473.pdf Size:196K _international_rectifier

PD- 94037A IRF7473 HEXFET® Power MOSFET Applications VDSS RDS(on) max ID Telecom and Data-Com 24 and 48V input DC-DC converters ? 100V 26m? ?@VGS = 10V 6.9A ? ? Motor Control Uninterrutible Power Supply Benefits Ultra Low On-Resistance A A High Speed Switching 1 8 S D Low Gate Drive Current Due to Improved 2 7 S D Gate Charge Characteristic 3 6 S D Improved Avalanche Ruggedness and 4 Dynamic dv/dt 5 G D Fully Characterized Avalanche Voltage SO-8 and Current Top View Typical SMPS Topologies Full and Half Bridge 48V input Circuit Forward 24V input Circuit Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 6.9 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 5.5 A IDM Pulsed Drain Current 55 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt 5.8 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage

5.16. irf7477.pdf Size:213K _international_rectifier

PD- 94094A IRF7477 SMPS MOSFET HEXFET® Power MOSFET Applications ?) VDSS RDS(on) max (m?) ID ?) ?) ?) High Frequency Synchronous Buck 30V 8.5@VGS = 10V 14A Converters for Computers and 10@VGS = 4.5V 11A Communications Benefits A A Ultra-Low Gate Impedance 1 8 S D Very Low RDS(on) 2 7 S D Fully Characterized Avalanche Voltage 3 6 S D and Current 4 5 G D Low Charge Ratio to Eliminate False Turn On in High Frequency Circuits SO-8 Top View Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 30 V VGS Gate-to-Source Voltage ± 20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 14 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 11 A IDM Pulsed Drain Current 110 PD @TA = 25°C Maximum Power Dissipation 2.5 W PD @TA = 70°C Maximum Power Dissipation 1.6 W Linear Derating Factor 0.02 mW/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Symbol Parameter Typ. Max. Units R?JL Jun

5.17. irf7459.pdf Size:112K _international_rectifier

PD- 93885B IRF7459 SMPS MOSFET Applications HEXFET® Power MOSFET High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 9.0m? 12A for Telecom and Industrial use High Frequency Buck Converters for Computer Processor Power Benefits A A 1 8 S D Ultra-Low Gate Impedance 2 7 S D Very Low RDS(on) at 4.5V VGS 3 6 Fully Characterized Avalanche Voltage S D and Current 4 5 G D SO-8 Top View Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 20 V VGS Gate-to-Source Voltage ± 12 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 12 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 10 A IDM Pulsed Drain Current 100 PD @TA = 25°C Maximum Power Dissipation 2.5 W PD @TA = 70°C Maximum Power Dissipation 1.6 W Linear Derating Factor 0.02 W/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Symbol Parameter Typ. Max. Units R?JL Junction-to-Drain Lead –

5.18. irf7406.pdf Size:114K _international_rectifier

PD - 9.1247C IRF7406 PRELIMINARY HEXFET® Power MOSFET Generation V Technology A 1 8 Ultra Low On-Resistance S D VDSS = -30V 2 7 P-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.045? Dynamic dv/dt Rating Fast Switching Top V iew Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized SO-8 leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. Th

5.19. irf7493.pdf Size:92K _international_rectifier

PD - 94654 PROVISIONAL IRF7493 HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l High frequency DC-DC converters 80V 15m @VGS = 10V 9.2A Benefits A A l Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See App. Note AN1001) 4 5 G D l Fully Characterized Avalanche Voltage SO-8 and Current Top View Absolute Maximum Ratings Parameter Max. Units VDS Drain-to-Source Voltage 80 V VGS Gate-to-Source Voltage ± 20 Continuous Drain Current, VGS @ 10V ID @ TA = 25°C 9.2 ID @ TA = 100°C Continuous Drain Current, VGS @ 10V 5.8 A Pulsed Drain Current IDM 74 PD @TA = 25°C Maximum Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C dv/dt Peak Diode Recovery dv/dt 4.9 V/ns TJ Operating Junction and -55 to + 150 °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units R?JL Junction-to-Drain Lead ––– 20 °C/W Junction-to

5.20. irf7402.pdf Size:136K _international_rectifier

PD - 93851A IRF7402 HEXFET® Power MOSFET Generation V Technology A A Ultra Low On-Resistance 1 8 S D N-Channel MOSFET VDSS = 20V 2 7 S D Very Small SOIC Package 3 6 S D Low Profile (<1.1mm) 4 Available in Tape & Reel 5 G D RDS(on) = 0.035? Fast Switching Top View Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized SO-8 leadframe for enhanced thermal characterstics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduce

5.21. irf7467.pdf Size:114K _international_rectifier

PD - 93883B IRF7467 SMPS MOSFET Applications HEXFET® Power MOSFET High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification 30V 12m? 11A for Telecom and Industrial use High Frequency Buck Converters for Computer Processor Power Benefits A A Ultra-Low Gate Impedance 1 8 S D Very Low RDS(on) at 4.5V VGS 2 7 S D Fully Characterized Avalanche Voltage 3 6 S D and Current 4 5 G D SO-8 Top View Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 30 V VGS Gate-to-Source Voltage ± 12 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 11 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 9.0 A IDM Pulsed Drain Current 90 PD @TA = 25°C Maximum Power Dissipation 2.5 W PD @TA = 70°C Maximum Power Dissipation 1.6 W Linear Derating Factor 0.02 W/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Symbol Parameter Typ. Max. Units R?JL Junction-to-Drain Lead ––

5.22. irf7404.pdf Size:163K _international_rectifier

PD - 9.1246C IRF7404 HEXFET® Power MOSFET Generation V Technology A 1 8 S D Ultra Low On-Resistance VDSS = -20V 2 7 P-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.040? Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and SO-8 multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is

5.23. irf7413.pdf Size:123K _international_rectifier

PD- 91330F IRF7413 SMPS MOSFET HEXFET® Power MOSFET VDSS RDS(on) max(mW) ID Applications l High frequency DC-DC converters 30V 11@VGS = 10V 12A Benefits A A l Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D l Fully Characterized Capacitance Including 3 6 S Effective COSS to Simplify Design, (See D App. Note AN1001) 4 5 G D l Fully Characterized Avalanche Voltage SO-8 and Current Top View Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 12 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 9.6 A IDM Pulsed Drain Current 96 PD @TA = 25°C Power Dissipation„ 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt † 1.0 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Symbol Parameter Typ. Max. Units R?JL Junction-to-Drain Lea

5.24. irf740lcpbf.pdf Size:1404K _international_rectifier

PD - 94880 IRF740LCPbF • Lead-Free 12/10/03 Document Number: 91052 www.vishay.com 1 IRF740LCPbF Document Number: 91052 www.vishay.com 2 IRF740LCPbF Document Number: 91052 www.vishay.com 3 IRF740LCPbF Document Number: 91052 www.vishay.com 4 IRF740LCPbF Document Number: 91052 www.vishay.com 5 IRF740LCPbF Document Number: 91052 www.vishay.com 6 IRF740LCPbF Document Number: 91052 www.vishay.com 7 IRF740LCPbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (

5.25. irf7457.pdf Size:120K _international_rectifier

PD- 93882D IRF7457 SMPS MOSFET HEXFET® Power MOSFET Applications High Frequency DC-DC Isolated VDSS RDS(on) max ID Converters with Synchronous Rectification 20V 7.0m? 15A for Telecom and Industrial use High Frequency Buck Converters for Computer Processor Power Benefits A A 1 8 S D Ultra-Low RDS(on) 2 7 Very Low Gate Impedance S D Fully Characterized Avalanche Voltage 3 6 S D and Current 4 5 G D SO-8 Top View Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 20 V VGS Gate-to-Source Voltage ± 20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 15 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 12 A IDM Pulsed Drain Current 120 PD @TA = 25°C Maximum Power Dissipation 2.5 W PD @TA = 70°C Maximum Power Dissipation 1.6 W Linear Derating Factor 0.02 W/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Symbol Parameter Typ. Max. Units R?JL Junction-to-Drain Lead ––– 20 R?JA

5.26. irf740s.pdf Size:171K _international_rectifier

5.27. irf7490.pdf Size:141K _international_rectifier

PD - 94508 IRF7490 HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS RDS(on) max Qg 100V 39mW@VGS=10V 37nC Benefits l Low Gate-to-Drain Charge to Reduce A A Switching Losses 1 8 S D l Fully Characterized Capacitance Including 2 7 S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 l Fully Characterized Avalanche Voltage G D and Current SO-8 Top View Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 100 V VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 5.4 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 4.3 A IDM Pulsed Drain Current 43 PD @TA = 25°C Maximum Power Dissipation 2.5 W PD @TA = 70°C Maximum Power Dissipation 1.6 Linear Derating Factor 20 mW/°C TJ Operating Junction and -55 to + 150 °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Symbol Parameter Typ. Max. Units

5.28. irf7401.pdf Size:118K _international_rectifier

PD - 9.1244C IRF7401 HEXFET® Power MOSFET Generation V Technology A A 1 8 Ultra Low On-Resistance S D VDSS = 20V 2 7 N-Channel Mosfet S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D RDS(on) = 0.022? Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized SO-8 leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is

5.29. irf740spbf.pdf Size:951K _international_rectifier

PD - 95204 IRF740SPbF • Lead-Free 4/29/04 Document Number: 91055 www.vishay.com 1 IRF740SPbF Document Number: 91055 www.vishay.com 2 IRF740SPbF Document Number: 91055 www.vishay.com 3 IRF740SPbF Document Number: 91055 www.vishay.com 4 IRF740SPbF Document Number: 91055 www.vishay.com 5 IRF740SPbF Document Number: 91055 www.vishay.com 6 IRF740SPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information (Lead-Free) I I I I I I I I I I = I OR I I I I = I I = = I Document Number: 91055 www.vishay.com 7 IRF740SPbF D2Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 1.60 (.063) 4.10 (.161) 1.50 (.059) 0.368 (.0145) 3.90 (.153) 0.342 (.0135) FEED DIRECTION 1.85 (.073) 11.60 (.457) 11.40 (.449) 1.65 (.065) 24.30 (.957) 15.42 (.609) 23.90 (.941) 15.22 (.601) TRL 1.75 (.069) 10.90 (.429) 1.25 (.049) 4.72 (.136) 10.70

5.30. irf7460.pdf Size:121K _international_rectifier

PD - 93886D IRF7460 SMPS MOSFET HEXFET® Power MOSFET Applications ?) VDSS RDS(on) max(m?) ID ?) ?) ?) High Frequency Isolated DC-DC 20V 10@VGS = 10V 12A Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power A A 1 8 S D Benefits 2 7 S D Ultra-Low Gate Impedance 3 6 S D Very Low RDS(on) 4 5 G D Fully Characterized Avalanche Voltage SO-8 and Current Top View Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 20 V VGS Gate-to-Source Voltage ± 20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 12 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 10 A IDM Pulsed Drain Current 100 PD @TA = 25°C Maximum Power Dissipation 2.5 W PD @TA = 70°C Maximum Power Dissipation 1.6 W Linear Derating Factor 0.02 mW/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Symbol Parameter Typ. Max. Units R?JL Juncti

5.31. irf7488.pdf Size:141K _international_rectifier

PD - 94507 IRF7488 HEXFET® Power MOSFET Applications l High frequency DC-DC converters VDSS RDS(on) max Qg 80V 29mW@VGS=10V 38nC Benefits l Low Gate-to-Drain Charge to Reduce A A Switching Losses 1 8 S D l Fully Characterized Capacitance Including 2 7 S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 l Fully Characterized Avalanche Voltage G D and Current SO-8 Top View Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 80 V VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 6.3 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 5.0 A IDM Pulsed Drain Current 50 PD @TA = 25°C Maximum Power Dissipation 2.5 W PD @TA = 70°C Maximum Power Dissipation 1.6 Linear Derating Factor 20 mW/°C TJ Operating Junction and -55 to + 150 °C TSTG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Symbol Parameter Typ. Max. Units

5.32. irf7463.pdf Size:84K _international_rectifier

PD- 93843A IRF7463 SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High Frequency DC-DC Converters 30V 0.008? 14A with Synchronous Rectification Benefits Ultra-Low RDS(on) at 4.5V VGS Low Charge and Low Gate Impedance to Reduce Switching Losses Fully Characterized Avalanche Voltage and Current SO-8 Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 14 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 11 A IDM Pulsed Drain Current 110 PD @TA = 25°C Power Dissipation 2.5 W PD @TA = 70°C Power Dissipation 1.6 Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 12 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 Thermal Resistance Parameter Max. Units R?JA Maximum Junction-to-Ambient 50 °C/W Typical SMPS Topologies Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers Notes through are on page 7 www.irf.com 1 3/30/00 IRF7463 Static @ TJ =

5.33. irf7458.pdf Size:120K _international_rectifier

PD- 93892C IRF7458 SMPS MOSFET HEXFET® Power MOSFET Applications High Frequency Isolated DC-DC VDSS RDS(on) max ID Converters with Synchronous Rectification 30V 8.0m? 14A for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits A A 1 8 Ultra-Low Gate Impedance S D Very Low RDS(on) 2 7 S D Fully Characterized Avalanche Voltage 3 6 S D and Current 4 5 G D SO-8 Top View Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 30 V VGS Gate-to-Source Voltage ± 30 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 14 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 11 A IDM Pulsed Drain Current 110 PD @TA = 25°C Maximum Power Dissipation 2.5 W PD @TA = 70°C Maximum Power Dissipation 1.6 W Linear Derating Factor 0.02 mW/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Symbol Parameter Typ. Max. Units R?JL Junction-to-Drain Lead ––– 20 R?J

5.34. irf740as-l.pdf Size:304K _international_rectifier

PD- 95532 SMPS MOSFET IRF740AS/LPbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 400V 0.55? 10A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and D 2 TO-262 Pak Avalanche Voltage and Current l Effective Coss specified ( See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V† 10 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V† 6.3 A IDM Pulsed Drain Current † 40 PD @TA = 25°C Power Dissipation 3.1 W PD @TC = 25°C Power Dissipation 125 Linear Derating Factor 1.0 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt ?† 5.9 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from cas

5.35. irf7491.pdf Size:508K _international_rectifier

PD - 94537 IRF7491 HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 80V 16m?@VGS = 10V 9.7A Benefits A A Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See App. Note AN1001) 4 5 G D Fully Characterized Avalanche Voltage SO-8 and Current Top View Absolute Maximum Ratings Parameter Max. Units VDS Drain-to-Source Voltage 80 V VGS Gate-to-Source Voltage ± 20 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 9.7 Continuous Drain Current, VGS @ 10V ID @ TA = 100°C 6.1 A Pulsed Drain Current IDM 77 PD @TA = 25°C Maximum Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C dv/dt Peak Diode Recovery dv/dt 4.4 V/ns TJ Operating Junction and -55 to + 150 °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units R?JL Junction-to-Drain Lead ––– 20 °C/W R?JA Junction-to-Ambient

5.36. irf7466.pdf Size:233K _international_rectifier

PD- 93884C IRF7466 SMPS MOSFET HEXFET® Power MOSFET Applications ?) VDSS RDS(on) max(m?) ID ?) ?) ?) High Frequency Isolated DC-DC 30V 12.5@VGS = 10V 11A Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for A Computer Processor Power A 1 8 S D Benefits 2 7 S D Ultra-Low Gate Impedance 3 6 S D Very Low RDS(on) 4 5 G D Fully Characterized Avalanche Voltage SO-8 and Current Top View Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 30 V VGS Gate-to-Source Voltage ± 20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 11 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 9.0 A IDM Pulsed Drain Current 90 PD @TA = 25°C Maximum Power Dissipation 2.5 W PD @TA = 70°C Maximum Power Dissipation 1.6 W Linear Derating Factor 0.02 mW/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Symbol Parameter Typ. Max. Units R?JL Junct

5.37. irf7478.pdf Size:209K _international_rectifier

PD- 94055A IRF7478 SMPS MOSFET HEXFET® Power MOSFET Applications ?) VDSS RDS(on) max (m?) ID ?) ?) ?) High frequency DC-DC converters 60V 26@VGS = 10V 4.2A 30@VGS = 4.5V 3.5A Benefits A A 1 8 S D Low Gate to Drain Charge to Reduce 2 7 Switching Losses S D Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See 4 5 G D App. Note AN1001) Fully Characterized Avalanche Voltage SO-8 Top View and Current Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 7.0 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 5.6 A IDM Pulsed Drain Current 56 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt 3.7 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Symbol Parameter Typ. Max. U

5.38. irf740lc.pdf Size:174K _international_rectifier

5.39. irf7403.pdf Size:116K _international_rectifier

PD - 9.1245B PRELIMINARY IRF7403 HEXFET® Power MOSFET Generation V Technology A Ultra Low On-Resistance A 1 8 S D N-Channel Mosfet VDSS = 30V 2 7 S D Surface Mount 3 6 Available in Tape & Reel S D Dynamic dv/dt Rating 4 5 G D RDS(on) = 0.022? Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in SO-8 an application with dramatically reduced board space. The pack

5.40. irf7475.pdf Size:613K _international_rectifier

PD - 94531A IRF7475 HEXFET® Power MOSFET Applications VDSS RDS(on) max Qg l High Frequency Point-of-Load Synchronous Buck Converter for 12V 15m @VGS = 4.5V 19nC Applications in Networking & Computing Systems. A A 1 8 S D Benefits 2 7 S D l Very Low RDS(on) at 4.5V VGS 3 6 S D l Ultra-Low Gate Impedance 4 5 G D l Fully Characterized Avalanche Voltage and Current SO-8 Top View Absolute Maximum Ratings Parameter Max. Units VDS Drain-to-Source Voltage 12 V VGS Gate-to-Source Voltage ± 12 Continuous Drain Current, VGS @ 10V ID @ TA = 25°C 11 ID @ TA = 100°C Continuous Drain Current, VGS @ 10V 7.0 A Pulsed Drain Current IDM 88 Power Dissipation PD @TA = 25°C 2.5 W Power Dissipation PD @TA = 70°C 1.6 Linear Derating Factor 0.02 W/°C TJ Operating Junction and -55 to + 150 °C TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units R?JL Junction-to-Drain Lead ––– 20 °C/W Junction-to-Ambient R?JA ––– 50 Notes through

5.41. irf7484.pdf Size:180K _international_rectifier

PD - 94446A IRF7484 Typical Applications Relay replacement HEXFET® Power MOSFET Anti-lock Braking System Air Bag VDSS RDS(on) max (mW) ID Benefits 40V 10@VGS = 7.0V 14A Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax A A 1 8 S D 2 7 S D Description 3 6 S D Specifically designed for Automotive applications, this 4 5 Stripe Planar design of HEXFET® Power MOSFETs G D utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional SO-8 Top View features of this HEXFET power MOSFET are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10

5.42. irf7465.pdf Size:106K _international_rectifier

PD-93896 IRF7465 SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters ? 150V 0.28? ?@VGS = 10V 1.9A ? ? Benefits A Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including Effective COSS to Simplify Design (See 3 6 S D App. Note AN1001) 4 5 G D Fully Characterized Avalanche Voltage and Current SO-8 Top View Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 1.9 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 1.5 A IDM Pulsed Drain Current 15 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 7.8 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Symbol Parameter Typ. Max. Units R?JL Junction-to-Dra

5.43. irf7433.pdf Size:108K _international_rectifier

PD -94056 IRF7433 HEXFET® Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -12V 24m?@VGS = -4.5V -8.7A Surface Mount 30m?@VGS = -2.5V -7.4A Available in Tape & Reel 46m?@VGS = -1.8V -6.3A Description A 1 8 S D These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to 2 7 S D achieve the extremely low on-resistance per silicon 3 6 area. This benefit provides the designer with an S D extremely efficient device for use in battery and load 4 5 G D management applications.. SO-8 The SO-8 has been modified through a customized Top View leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. Absolute Maximum Ratings Parameter Max. Unit

5.44. irf740as.pdf Size:135K _international_rectifier

PD- 92005 SMPS MOSFET IRF740AS/L HEXFET® Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 400V 0.55? 10A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 Pak Avalanche Voltage and Current Effective Coss specified ( See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 10 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 6.3 A IDM Pulsed Drain Current 40 PD @TA = 25°C Power Dissipation 3.1 W PD @TC = 25°C Power Dissipation 125 Linear Derating Factor 1.0 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 5.9 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Typical SMPS Topologies:

5.45. irf7413a.pdf Size:116K _international_rectifier

PD - 9.1613A IRF7413A PRELIMINARY HEXFET® Power MOSFET A Generation V Technology A 1 8 S D Ultra Low On-Resistance 2 7 N-Channel Mosfet VDSS = 30V S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 G D Dynamic dv/dt Rating RDS(on) = 0.0135? Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and SO-8 multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board

5.46. irf7468.pdf Size:232K _international_rectifier

PD - 93914D IRF7468 SMPS MOSFET HEXFET® Power MOSFET Applications ?) VDSS RDS(on) max(m?) ID ?) ?) ?) High Frequency Isolated DC-DC 40V 15.5@VGS = 10V 9.4A Converters with Synchronous Rectification for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power A A 1 8 S D Benefits 2 7 S D Ultra-Low Gate Impedance 3 6 S D Very Low RDS(on) at 4.5V VGS 4 5 G D Fully Characterized Avalanche Voltage SO-8 and Current Top View Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 40 V VGS Gate-to-Source Voltage ± 12 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 9.4 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 7.5 A IDM Pulsed Drain Current 75 PD @TA = 25°C Maximum Power Dissipation 2.5 W PD @TA = 70°C Maximum Power Dissipation 1.6 W Linear Derating Factor 0.02 mW/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Symbol Parameter Typ. Max. Un

5.47. irf7470.pdf Size:119K _international_rectifier

PD- 93913C IRF7470 SMPS MOSFET Applications HEXFET® Power MOSFET High Frequency DC-DC Converters VDSS RDS(on) max ID with Synchronous Rectification 40V 13m? 10A Benefits Ultra-Low Gate Impedance A A Very Low RDS(on) at 4.5V VGS 1 8 S D 2 7 Fully Characterized Avalanche Voltage S D and Current 3 6 S D 4 5 G D SO-8 Top View Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 40 V VGS Gate-to-Source Voltage ± 12 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 10 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 8.5 A IDM Pulsed Drain Current 85 PD @TA = 25°C Maximum Power Dissipation 2.5 W PD @TA = 70°C Maximum Power Dissipation 1.6 W Linear Derating Factor 0.02 mW/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Symbol Parameter Typ. Max. Units R?JL Junction-to-Drain Lead ––– 20 R?JA Junction-to-Ambient ––– 50 °C/W Notes through are on page 8 www.irf.com 1 3/25/01 IRF747

5.48. irf7434.pdf Size:149K _international_rectifier

PD - 9.1709 IRF7343 PRELIMINARY HEXFET® Power MOSFET Generation V Technology N-CHANNEL MOSFE T N-Ch P-Ch 1 8 Ultra Low On-Resistance S1 D1 Dual N and P Channel MOSFET 2 7 G1 D1 Surface Mount VDSS 55V -55V 3 6 S2 D2 Fully Avalanche Rated 4 5 G2 D2 P-C H ANN EL MO SFE T RDS(on) 0.050? 0.105? Description Top View Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, SO-8 multiple devices can be used in an application with

5.49. irf7451.pdf Size:209K _international_rectifier

PD- 93898A IRF7451 SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters ? 150V 0.09? 3.6A ? ? ? Benefits Low Gate to Drain Charge to Reduce A A 1 8 Switching Losses S D Fully Characterized Capacitance Including 2 7 S D Effective COSS to Simplify Design, (See 3 6 S D App. Note AN1001) 4 5 G D Fully Characterized Avalanche Voltage and Current SO-8 Top View Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 3.6 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.9 A IDM Pulsed Drain Current 29 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 7.9 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Symbol Parameter Typ. Max. Units R?JL Junction-to-Drain Lead ––

5.50. irf7416.pdf Size:116K _international_rectifier

PD - 9.1356D IRF7416 HEXFET® Power MOSFET Generation V Technology A 1 8 Ultra Low On-Resistance S D P-Channel Mosfet VDSS = -30V 2 7 S D Surface Mount 3 6 S D Available in Tape & Reel 4 5 Dynamic dv/dt Rating G D RDS(on) = 0.02? Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and SO-8 multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package

5.51. irf7456.pdf Size:165K _international_rectifier

PD- 93840B IRF7456 SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High Frequency DC-DC Converters 20V 0.0065? 16A with Synchronous Rectification Benefits A A Ultra-Low RDS(on) at 4.5V VGS 1 8 S D Low Charge and Low Gate Impedance to 2 7 S D Reduce Switching Losses 3 6 S D Fully Characterized Avalanche Voltage 4 5 and Current G D SO-8 Top View Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 20 V VGS Gate-to-Source Voltage ± 12 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 16 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 13 A IDM Pulsed Drain Current 130 PD @TA = 25°C Maximum Power Dissipation 2.5 W PD @TA = 70°C Maximum Power Dissipation 1.6 W Linear Derating Factor 0.02 W/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Parameter Max. Units R?JA Maximum Junction-to-Ambient 50 °C/W Typical SMPS Topologies Telecom 48V Input Converters with Logi

5.52. irf7453.pdf Size:220K _international_rectifier

PD- 93899A IRF7453 SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters ? 250V 0.23? ?@VGS = 10V 2.2A ? ? Benefits A Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including Effective COSS to Simplify Design (See 3 6 S D App. Note AN1001) 4 5 G D Fully Characterized Avalanche Voltage and Current SO-8 Top View Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.2 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 1.7 A IDM Pulsed Drain Current 17 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 13 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Symbol Parameter Typ. Max. Units R?JL Junction-to-Drai

5.53. irf740.pdf Size:926K _international_rectifier

PD - 94872 IRF740PbF • Lead-Free 12/5/03 Document Number: 91053 www.vishay.com 1 IRF740PbF Document Number: 91053 www.vishay.com 2 IRF740PbF Document Number: 91053 www.vishay.com 3 IRF740PbF Document Number: 91053 www.vishay.com 4 IRF740PbF Document Number: 91053 www.vishay.com 5 IRF740PbF Document Number: 91053 www.vishay.com 6 IRF740PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) 1.32 (.052) - A - 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK MIN 1 - GATE 1 2 3 2 - DRAIN 1- GATE 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045)

5.54. irf7471.pdf Size:214K _international_rectifier

PD- 94036B SMPS MOSFET IRF7471 Applications HEXFET® Power MOSFET High Frequency Isolated DC-DC VDSS RDS(on) max ID Converters with Synchronous Rectification 40V 13m? 10A for Telecom and Industrial Use High Frequency Buck Converters for Computer Processor Power Benefits A A 1 8 Ultra-Low Gate Impedance S D Very Low RDS(on) 2 7 S D Fully Characterized Avalanche Voltage 3 6 S D and Current 4 5 G D SO-8 Top View Absolute Maximum Ratings Symbol Parameter Max. Units VDS Drain-Source Voltage 40 V VGS Gate-to-Source Voltage ± 20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 10 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 8.3 A IDM Pulsed Drain Current 83 PD @TA = 25°C Maximum Power Dissipation 2.5 W PD @TA = 70°C Maximum Power Dissipation 1.6 W Linear Derating Factor 0.02 mW/°C TJ , TSTG Junction and Storage Temperature Range -55 to + 150 °C Thermal Resistance Symbol Parameter Typ. Max. Units R?JL Junction-to-Drain Lead ––– 20 R?JA

5.55. irf7425.pdf Size:91K _international_rectifier

PD- 94022A IRF7425 HEXFET® Power MOSFET Ultra Low On-Resistance ?) VDSS RDS(on) max (m?) ID ?) ?) ?) P-Channel MOSFET 20V 8.2@VGS = -4.5V -15A Surface Mount 13@VGS = -2.5V -13A Available in Tape & Reel A 1 8 Description S D These P-Channel HEXFET® Power MOSFETs from 2 7 S D International Rectifier utilize advanced processing 3 6 techniques to achieve the extremely low on-resistance S D per silicon area. This benefit provides the designer 4 5 G D with an extremely efficient device for use in battery and load management applications.. SO-8 Top View The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. Absolute Maximum Ratings Parameter Ma

5.56. irf7492.pdf Size:105K _international_rectifier

PD - 94498 IRF7492 HEXFET® Power MOSFET VDSS RDS(on) max ID Applications High frequency DC-DC converters ? 200V 79m? ?@VGS = 10V 3.7A ? ? Benefits A A Low Gate to Drain Charge to Reduce 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including 3 6 S D Effective COSS to Simplify Design, (See 4 App. Note AN1001) 5 G D Fully Characterized Avalanche Voltage SO-8 and Current Top View Absolute Maximum Ratings Parameter Max. Units VDS Drain-Source Voltage 200 V VGS Gate-to-Source Voltage ± 20 V ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 3.7 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.0 A IDM Pulsed Drain Current 30 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C dv/dt Peak Diode Recovery dv/dt 9.5 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Symbol Parameter Typ. Max. Units R

5.57. irf7424.pdf Size:229K _international_rectifier

PD- 94024A IRF7424 HEXFET® Power MOSFET Ultra Low On-Resistance ?) VDSS RDS(on) max (m?) ID ?) ?) ?) P-Channel MOSFET -30V 13.5@VGS = -10V -11A Surface Mount 22@VGS = -4.5V -8.8A Available in Tape & Reel A 1 8 Description S D These P-Channel MOSFETs from International 2 7 S D Rectifier utilize advanced processing techniques to 3 achieve the extremely low on-resistance per silicon 6 S D area. This benefit provides the designer with an 4 5 G D extremely efficient device for use in battery and load management applications.. SO-8 Top View The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. Absolute Maximum Ratings Parameter Max. Units VD

5.58. irf7450.pdf Size:102K _international_rectifier

PD- 93893A IRF7450 SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters ? 200V 0.17? ?@VGS = 10V 2.5A ? ? Benefits A Low Gate to Drain Charge to Reduce A 1 8 S D Switching Losses 2 7 S D Fully Characterized Capacitance Including Effective COSS to Simplify Design (See 3 6 S D App. Note AN1001) 4 5 G D Fully Characterized Avalanche Voltage and Current SO-8 Top View Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.5 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 2.0 A IDM Pulsed Drain Current 20 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 11 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Symbol Parameter Typ. Max. Units R?JL Junction-to-Dr

5.59. irf7474.pdf Size:224K _international_rectifier

PD- 94097 IRF7474 HEXFET® Power MOSFET Applications VDSS RDS(on) max ID Telecom and Data-Com 24 and 48V ? 100V 63m? ?@VGS = 10V 4.5A ? ? input DC-DC converters Motor Control Uninterruptible Power Supply Benefits A Low On-Resistance A 1 8 S D High Speed Switching 2 7 Low Gate Drive Current Due to Improved S D Gate Charge Characteristic 3 6 S D Improved Avalanche Ruggedness and 4 5 G D Dynamic dv/dt Fully Characterized Avalanche Voltage SO-8 Top View and Current Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.5 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.6 A IDM Pulsed Drain Current 36 PD @TA = 25°C Power Dissipation 2.5 W Linear Derating Factor 0.02 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt 5.5 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Res

5.60. irf7410.pdf Size:102K _international_rectifier

PD - 94025 IRF7410 HEXFET® Power MOSFET Ultra Low On-Resistance VDSS RDS(on) max ID P-Channel MOSFET -12V 7m?@VGS = -4.5V -16A Surface Mount 9m?@VGS = -2.5V -13.6A Available in Tape & Reel 13m?@VGS = -1.8V -11.5A Description A These P-Channel HEXFET® Power MOSFETs from 1 8 S D International Rectifier utilize advanced processing 2 7 techniques to achieve the extremely low on-resistance S D per silicon area. This benefit provides the designer 3 6 S D with an extremely efficient device for use in battery and load management applications.. 4 5 G D The SO-8 has been modified through a customized SO-8 Top View leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. Absolute Maximum Ratings Par

5.61. irf740a.pdf Size:937K _samsung

Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.55 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 10 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 400V Lower RDS(ON) : 0.437 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 400 o Continuous Drain Current (TC=25 C) 10 ID A o C Continuous Drain Current (TC=100 ) 6.3 IDM Drain Current-Pulsed 1 40 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 457 O IAR Avalanche Current 1 10 A O EAR Repetitive Avalanche Energy 1 mJ 13.4 O 3 dv/dt Peak Diode Recovery dv/dt V/ns 4.0 O Total Power Dissipation (TC=25 oC ) 134 W PD Linear Derating Factor W/ o 1.08 C Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 Purpo

5.62. irf740lc_sihf740lc.pdf Size:197K _vishay

IRF740LC, SiHF740LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Ultra Low Gate Charge VDS (V) 400 • Reduced Gate Drive Requirement Available RDS(on) (?)VGS = 10 V 0.55 • Enhanced 30 V VGS Rating RoHS* COMPLIANT Qg (Max.) (nC) 39 • Reduced Ciss, Coss, Crss Qgs (nC) 10 • Extremely High Frequency Operation Qgd (nC) 19 • Repetitive Avalanche Rated • Compliant to RoHS Directive 2002/95/EC Configuration Single D DESCRIPTION This new series of low charge Power MOSFETs achieve TO-220AB significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, G allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high S frequency applications. Frequencies of a few MHz at high D G S current are possible using the new Low Charge MOSFETs. N-Channel MOSFET

5.63. irf740_sihf740.pdf Size:196K _vishay

IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 400 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.55 RoHS* • Fast Switching Qg (Max.) (nC) 63 COMPLIANT • Ease of Paralleling Qgs (nC) 9.0 Qgd (nC) 32 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation S D levels to approximately 50 W. The low thermal resistance G S and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF740PbF Lead (Pb)-free SiHF740-E3 IRF740 SnPb SiHF740 ABSOLUTE M

5.64. irf740a_sihf740a.pdf Size:205K _vishay

IRF740A, SiHF740A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 400 Requirement Available RDS(on) (?)VGS = 10 V 0.55 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 36 COMPLIANT Ruggedness Qgs (nC) 9.9 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 16 and Current Configuration Single • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC D TO-220AB APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply G • High Speed Power Switching S TYPICAL SMPS TOPOLOGIES D G S • Single Transistor Flyback Xfmr. Reset N-Channel MOSFET • Single Transistor Forward Xfmr. Reset (Both for US Line Input Only) ORDERING INFORMATION Package TO-220AB IRF740APbF Lead (Pb)-free SiHF740A-E3 IRF740A SnPb SiHF740A ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 400 V

5.65. irf740.pdf Size:246K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRF740 DESCRIPTION ·Drain Current –ID= 10A@ TC=25? ·Drain Source Voltage- : VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55?(Max) ·Fast Switching Speed APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and solenoid drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 400 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25? 10 A Ptot Total Dissipation@TC=25? 125 W Tj Max. Operating Junction Temperature 150 ? Tstg Storage Temperature Range -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT ?/W Rth j-c Thermal Resistance,Junction to Case 1.0 isc Website:www.iscsemi.cn www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc N-Channel Mosfet

See also transistors datasheet: IRF741 , IRF7413 , IRF7413A , IRF7416 , IRF742 , IRF7421D1 , IRF7422D2 , IRF743 , 2N5484 , IRF7507(N) , IRF7507(P) , IRF7509(N) , IRF7509(P) , IRF750A , IRF7521D1 , IRF7523D1 , IRF7524D1 .

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