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RFL2N06 MOSFET (IC) Datasheet. Cross Reference Search. RFL2N06 Equivalent

Type Designator: RFL2N06

Type of RFL2N06 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 8.33

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 2

Maximum junction temperature (Tj), °C: 150

Rise Time of RFL2N06 transistor (tr), nS: 14

Drain-source Capacitance (Cd), pF: 85

Maximum drain-source on-state resistance (Rds), Ohm: 0.95

Package: TO205AF

RFL2N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

RFL2N06 PDF doc:

1.1. rfl2n05l_rfl2n06l_rfp4n05l_rfp4n06l.pdf Size:255K _njs

RFL2N06
RFL2N06



4.1. rfl2n05_rlf2n06.pdf Size:89K _njs

RFL2N06
RFL2N06



See also transistors datasheet: RFL1N08 , RFL1N10 , RFL1N18 , RFL1N18L , RFL1N20 , RFL1N20L , RFL2N05 , RFL2N05L , IRF3710 , RFL2N06L , RFL1P08 , RFL1P10 , RFP2N18L , AP9916H , AP9916J , SSM70T03H , SSM70T03J .

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