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RFL1P10 MOSFET. Datasheet pdf. Equivalent

Type Designator: RFL1P10

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 8.33 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 1 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 80 pF

Maximum Drain-Source On-State Resistance (Rds): 3.65 Ohm

Package: TO205AF

RFL1P10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

RFL1P10 PDF doc:

1.1. rfl1p08_rfl1p10.pdf Size:85K _njs

RFL1P10
RFL1P10



Datasheet: RFL1N18L , RFL1N20 , RFL1N20L , RFL2N05 , RFL2N05L , RFL2N06 , RFL2N06L , RFL1P08 , BUZ11 , RFP2N18L , AP9916H , AP9916J , SSM70T03H , SSM70T03J , IRF630MFP , IRFD123 , SIHFD123 .

 


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