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RFL1P10 MOSFET (IC) Datasheet. Cross Reference Search. RFL1P10 Equivalent

Type Designator: RFL1P10

Type of RFL1P10 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 8.33

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 1

Maximum junction temperature (Tj), °C: 150

Rise Time of RFL1P10 transistor (tr), nS: 15

Drain-source Capacitance (Cd), pF: 80

Maximum drain-source on-state resistance (Rds), Ohm: 3.65

Package: TO205AF

RFL1P10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

RFL1P10 PDF doc:

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RFL1P10
RFL1P10



See also transistors datasheet: RFL1N18L , RFL1N20 , RFL1N20L , RFL2N05 , RFL2N05L , RFL2N06 , RFL2N06L , RFL1P08 , BUZ11 , RFP2N18L , AP9916H , AP9916J , SSM70T03H , SSM70T03J , IRF630MFP , IRFD123 , SIHFD123 .

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