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AP9916H MOSFET (IC) Datasheet. Cross Reference Search. AP9916H Equivalent

Type Designator: AP9916H

Type of AP9916H transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 50

Maximum drain-source voltage |Uds|, V: 18

Maximum gate-source voltage |Ugs|, V: 12

Maximum drain current |Id|, A: 35

Maximum junction temperature (Tj), °C: 150

Rise Time of AP9916H transistor (tr), nS: 98

Drain-source Capacitance (Cd), pF: 258

Maximum drain-source on-state resistance (Rds), Ohm: 0.025

Package: TO252

AP9916H Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AP9916H PDF doc:

1.1. ap9916h-j.pdf Size:89K _update

AP9916H
AP9916H

AP9916H/J Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼Low on-resistance BVDSS 18V ▼ ▼ ▼ D ▼Capable of 2.5V gate drive RDS(ON) 25mΩ ▼ ▼ ▼ ▼Low drive current ID 35A ▼ ▼ ▼ G ▼Single Drive Requirement ▼ ▼ ▼ S Description G The Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with th

5.1. ap9918gj.pdf Size:81K _a-power

AP9916H
AP9916H

AP9918GH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ЎLow on-resistance BVDSS 20V Ў Ў Ў D ЎCapable of 2.5V gate drive RDS(ON) 14m? Ў Ў Ў ЎLow drive current ID 45A Ў Ў Ў G ЎSurface mount package Ў Ў Ў S Description G The Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with

See also transistors datasheet: RFL1N18L , RFL1N20 , RFL1N20L , RFL2N05 , RFL2N05L , RFL2N06 , RFL2N06L , RFL1P08 , BUZ11 , RFP2N18L , AP9916H , AP9916J , SSM70T03H , SSM70T03J , IRF630MFP , IRFD123 , SIHFD123 .

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MOSFET: 2SK1202 | SIHFD123 | IRFD123 | IRF630MFP | SSM70T03J | SSM70T03H | AP9916J | AP9916H | RFP2N18L | RFL1P10 | RFL1P08 | RFL2N06L | RFL2N06 | RFL2N05L | RFL2N05 |

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