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AP9916J MOSFET (IC) Datasheet. Cross Reference Search. AP9916J Equivalent

Type Designator: AP9916J

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd), W: 50

Maximum Drain-Source Voltage |Vds|, V: 18

Maximum Gate-Source Voltage |Vgs|, V: 12

Maximum Drain Current |Id|, A: 35

Maximum Junction Temperature (Tj), °C: 150

Rise Time (tr), nS: 98

Drain-Source Capacitance (Cd), pF: 258

Maximum Drain-Source On-State Resistance (Rds), Ohm: 0.025

Package: TO251

AP9916J Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AP9916J PDF doc:

4.1. ap9916h-j.pdf Size:89K _update

AP9916J
AP9916J

AP9916H/J Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼Low on-resistance BVDSS 18V ▼ ▼ ▼ D ▼Capable of 2.5V gate drive RDS(ON) 25mΩ ▼ ▼ ▼ ▼Low drive current ID 35A ▼ ▼ ▼ G ▼Single Drive Requirement ▼ ▼ ▼ S Description G The Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with th

5.1. ap9918gj.pdf Size:81K _a-power

AP9916J
AP9916J

AP9918GH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ЎLow on-resistance BVDSS 20V Ў Ў Ў D ЎCapable of 2.5V gate drive RDS(ON) 14m? Ў Ў Ў ЎLow drive current ID 45A Ў Ў Ў G ЎSurface mount package Ў Ў Ў S Description G The Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with

See also transistors datasheet: RFL2N05 , RFL2N05L , RFL2N06 , RFL2N06L , RFL1P08 , RFL1P10 , RFP2N18L , AP9916H , IRFP450 , SSM70T03H , SSM70T03J , IRF630MFP , IRFD123 , SIHFD123 , 2SK1202 , IPD06N03LA , IPU06N03LA .

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 AP9916J - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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MOSFET: IXFH50N50P3 | IXFQ50N50P3 | IXFT50N50P3 | IPF06N03LA | IPS06N03LA | IPU06N03LA | IPD06N03LA | 2SK1202 | SIHFD123 | IRFD123 | IRF630MFP | SSM70T03J | SSM70T03H | AP9916J | AP9916H |

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