All MOSFET. 2SK1202 Datasheet

 

2SK1202 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK1202

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 100 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 110 nS

Maximum Drain-Source On-State Resistance (Rds): 4 Ohm

Package: TO3PI

2SK1202 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2SK1202 PDF doc:

1.1. 2sk1202.pdf Size:61K _update

2SK1202
2SK1202

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1202 DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 900 V

5.1. 2sk1235.pdf Size:45K _sanyo

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5.3. 2sk1238.pdf Size:45K _sanyo

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5.4. 2sk1236.pdf Size:45K _sanyo

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5.5. 2sk1233.pdf Size:46K _sanyo

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5.6. 2sk1237.pdf Size:45K _sanyo

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5.7. 2sk1234.pdf Size:46K _sanyo

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5.8. rej03g0917_2sk1254lsds.pdf Size:103K _renesas

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.9. rej03g0918_2sk1298ds.pdf Size:96K _renesas

2SK1202
2SK1202

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

5.10. 2sk1254.pdf Size:90K _renesas

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2SK1202

2SK1254(L), 2SK1254(S) Silicon N Channel MOS FET REJ03G0917-0200 (Previous: ADE-208-1255) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching 4 V gate drive device ? Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code: PRSS

5.11. 2sk1215.pdf Size:140K _renesas

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2SK1202

2SK1215 Silicon N-Channel MOS FET REJ03G0813-0200 (Previous ADE-208-1176) Rev.2.00 Aug.10.2005 Application VHF amplifier Outline RENESAS Package code: PTSP0003ZA-A (Package name: CMPAK R ) 3 1. Gate 2. Drain 1 3. Source 2 *CMPAK is a trademark of Renesas Technology Corp. Rev.2.00 Aug 10, 2005 page 1 of 5 2SK1215 Absolute Maximum Ratings (Ta = 25C) Item Symbol

5.12. 2sk1294.pdf Size:374K _nec

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5.13. 2sk1272.pdf Size:401K _nec

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5.14. 2sk1289.pdf Size:347K _nec

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5.15. 2sk1290.pdf Size:387K _nec

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5.16. 2sk1292.pdf Size:374K _nec

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5.17. 2sk1282_2sk1282-z.pdf Size:379K _nec

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5.18. 2sk1286.pdf Size:381K _nec

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5.19. 2sk1271.pdf Size:342K _nec

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5.20. 2sk1274.pdf Size:436K _nec

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5.21. 2sk1295.pdf Size:362K _nec

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5.22. 2sk1273.pdf Size:355K _nec

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5.23. 2sk1285.pdf Size:300K _nec

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DATA SHEET N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1285 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION PACKAGE DRAWING (Unit: mm) The 2SK1285 is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. 8.5 MAX. 3.2 0.2 2.8 MAX. FEATURES Low on-state resistance RDS(on) = 0.32 ? MAX. (VGS = 10 V, ID = 2 A) RDS(on) = 0.40 ? MAX. (VGS = 4

5.24. 2sk1283.pdf Size:288K _nec

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2SK1202

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1283 SWITCHING N-CHANNEL POWER MOS FET PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SK1283 is N-channel MOS Field Effect Transistor designed or 8.5 MAX. solenoid, motor and lamp driver. 3.2 0.2 2.8 MAX. FEATURES Low on-state resistance RDS(on) = 0.18 ? MAX. (VGS = 10 V, ID = 2 A) RDS(on) = 0.24 ? MAX. (VGS = 4 V, ID = 2 A) Low

5.25. 2sk1284_2sk1284-z.pdf Size:381K _nec

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5.26. 2sk1287.pdf Size:349K _nec

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5.27. 2sk1293.pdf Size:369K _nec

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5.28. 2sk1288.pdf Size:379K _nec

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5.29. 2sk1266.pdf Size:33K _panasonic

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Power F-MOS FETs 2SK1266 2SK1266 Silicon N-Channel Power F-MOS Unit : mm Features 10.0 0.2 4.2 0.2 Low ON-resistance RDS(on) : RDS(on)1= 0.08?(typ) 5.5 0.2 2.7 0.2 High-speed switching : tf=180ns(typ) No secondary breakdown o3.1 0.1 Low-voltage drive Applications 1.3 0.2 DC-DC converter 1.4 0.1 Non-contact relay +0.2 0.5 -0.1 0.8 0.1 Solenoid drive Motor drive 2.54

5.30. 2sk1255.pdf Size:34K _panasonic

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Power F-MOS FETs 2SK1255 2SK1255 Silicon N-Channel Power F-MOS Unit : mm Features 10.0 0.2 4.2 0.2 Low ON-resistance RDS(on) : RDS(on)1= 0.135?(typ) 5.5 0.2 2.7 0.2 High-speed switching : tf= 53ns(typ) No secondary breakdown o3.1 0.1 Low-voltage drive Applications 1.3 0.2 DC-DC converter 1.4 0.1 Non-contact relay +0.2 0.5 -0.1 0.8 0.1 Solenoid drive Motor drive 2.5

5.31. 2sk1259.pdf Size:37K _panasonic

2SK1202
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Power F-MOS FETs 2SK1259 2SK1259 Silicon N-Channel Power F-MOS Unit : mm o 3.3 0.2 Features 20.0 0.5 5.0 0.3 3.0 Low ON-resistance RDS(on) : RDS(on)1= 0.012?(typ) High-speed switching : tf = 700ns(typ) No secondary breakdown Low-voltage drive 1.5 Applications 1.5 2.0 0.3 DC-DC converter 2.7 0.3 3.0 0.3 Non-contact relay 1.0 0.2 0.6 0.2 Solenoid drive Motor drive 5

5.32. 2sk123.pdf Size:28K _panasonic

2SK1202
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Silicon Junction FETs (Small Signal) 2SK123 2SK123 Silicon N-Channel Junction Unit : mm For impedance conversion in low frequency +0.2 5.8 -0.3 For electret capacitor microphone +0.25 1.5 2.4 0.1 -0.05 1.9 0.1 Features 1 High mutual conductance gm 3 Low noise voltage of NV 2 Absolute Maximum Ratings (Ta = 25?C) Parameter Symbol Rating Unit 1 : Drain Drain-Source voltage V

5.33. 2sk1214.pdf Size:34K _panasonic

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2SK1202

Power F-MOS FETs 2SK1214 2SK1214 Silicon N-Channel Power F-MOS Unit : mm Features 10.0 0.2 4.2 0.2 Low ON-resistance RDS(on) : RDS(on)1= 0.06?(typ) 5.5 0.2 2.7 0.2 High-speed switching : tf =110ns(typ) No secondary breakdown o3.1 0.1 Low-voltage drive Applications DC-DC converter 1.3 0.2 1.4 0.1 Non-contact relay +0.2 0.5 -0.1 Solenoid drive 0.8 0.1 Motor drive 2.54

5.34. 2sk1228.pdf Size:34K _panasonic

2SK1202
2SK1202

Silicon MOS FETs (Small Signal) 2SK1228 2SK1228 Silicon N-Channel MOS Unit : mm For switching +0.2 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Features High-speed switching 1 Wide frequency band Gate-protection diode built-in 3 2.5V drive possible 2 Absolute Maximum Ratings (Ta = 25?C) Parameter Symbol Rating Unit 0.1 to 0.3 Drain-Source voltage VDS 50 V 0.4 0.2 Gat

5.35. 2sk1267.pdf Size:34K _panasonic

2SK1202
2SK1202

Power F-MOS FETs 2SK1267 2SK1267 Silicon N-Channel Power F-MOS Unit : mm Features 15.0 0.5 4.5 0.2 Low ON-resistance RDS(on) : RDS(on)1= 0.07?(typ) 13.0 0.5 High-speed switching : tf =180ns(typ) 10.5 0.5 2.0 0.1 No secondary breakdown Large allowable power dissipation Low-voltage drive o3.2 0.1 Applications 2.0 0.2 1.4 0.3 1.1 0.1 DC-DC converter Non-contact relay

5.36. 2sk1278.pdf Size:189K _fuji

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2SK1202

N-channel MOS-FET 2SK1278 F-V Series 500V 1,1? 10A 100W > Features > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Symbol Rating Unit Drain-Source-Voltage V 500 V DS

5.37. 2sk1279.pdf Size:200K _fuji

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N-channel MOS-FET 2SK1279 F-V Series 500V 0,58? 15A 125W > Features > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Symbol Rating Unit Drain-Source-Voltage V 500 V DS

5.38. 2sk1277.pdf Size:206K _fuji

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2SK1202

N-channel MOS-FET 2SK1277 F-V Series 250V 0,12? 30A 150W > Features > Outline Drawing - Include Fast Recovery Diode - High Voltage - Low Driving Power > Applications - Motor Control - Inverters - Choppers > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Symbol Rating Unit Drain-Source-Voltage V 250 V DS

5.39. 2sk1217-01r.pdf Size:170K _fuji

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5.40. 2sk1299.pdf Size:48K _hitachi

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2SK1202

2SK1299(L), 2SK1299(S) Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device ? Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline DPAK-1 4 4 1 2 3 1 2 3 D 1. Gate G 2. Drain 3. Source 4. Drain S 2SK12

5.41. 2sk1296.pdf Size:38K _hitachi

2SK1202
2SK1202

2SK1296 Silicon N-Channel MOS FET Application TO220AB High speed power switching Features Low on-resistance 2 High speed switching 1 2 3 Low drive current 4 V gate drive device 1. Gate Can be driven from 5 V source 1 2. Drain Suitable for motor drive, DC-DC converter, (Flange) power switch and solenoid drive 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25

5.42. 2sk1270.pdf Size:216K _hitachi

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5.43. 2sk1298.pdf Size:48K _hitachi

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2SK1202

2SK1298 Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device ? Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline TO-3PFM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1298 Absolute Maximum Ratings (Ta = 25C

5.44. 2sk1284-z.pdf Size:1661K _kexin

2SK1202
2SK1202

SMD Type IC SMD Type MOSFET N-Channel MOSFET 2SK1284-Z TO-252 Unit: mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 Features 0.50 -0.7 Low on-state resistance RDS(on) 0.32 .@VGS=10V,ID=2A RDS(on) 0.40 @VGS=4V,ID=2A 0.127 +0.1 0.80-0.1 max Low Ciss Ciss=500pF TYP. Built-in G-S Gate Protection Diode + 0.1 1 Gate 2.3 0.60- 0.1 +0.15 4 .60 -0.15 2 Drain 3 Source A

5.45. 2sk1273.pdf Size:1350K _kexin

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2SK1202

SMD Type MOSFET N-Channel MOSFET 2SK1273 1.70 0.1 ■ Features ● VDS (V) = 60V ● ID = 2 A 0.42 0.1 0.46 0.1 ● RDS(ON) < 1Ω (VGS = 4V) ● RDS(ON) < 0.65Ω (VGS = 10V) 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 Continuous Drain Current ID 2 A Pulse

Datasheet: RFP2N18L , AP9916H , AP9916J , SSM70T03H , SSM70T03J , IRF630MFP , IRFD123 , SIHFD123 , IRF150 , IPD06N03LA , IPU06N03LA , IPS06N03LA , IPF06N03LA , IXFT50N50P3 , IXFQ50N50P3 , IXFH50N50P3 , APM2510NU .

 


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