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IRF820AL MOSFET (IC) Datasheet. Cross Reference Search. IRF820AL Equivalent

Type Designator: IRF820AL

Type of IRF820AL transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 50

Maximum drain-source voltage |Uds|, V: 500

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 2.5

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF820AL transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 3

Package: TO262

IRF820AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF820AL PDF doc:

3.1. irf820as.pdf Size:133K _international_rectifier

IRF820AL
IRF820AL

PD- 93774A IRF820AS SMPS MOSFET IRF820AL HEXFET® Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 3.0? 2.5A High speed power switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and TO-262 D2Pak Avalanche

3.2. irf820as-al.pdf Size:291K _international_rectifier

IRF820AL
IRF820AL

PD - 95533 IRF820ASPbF SMPS MOSFET IRF820ALPbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 500V 3.0? 2.5A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and

3.3. irf820a.pdf Size:196K _international_rectifier

IRF820AL
IRF820AL

PD - 94978 SMPS MOSFET IRF820APbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 500V 3.0? 2.5A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Volta

3.4. irf820a.pdf Size:917K _samsung

IRF820AL
IRF820AL

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 3.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 2.000 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Unit

3.5. irf820a_sihf820a.pdf Size:204K _vishay

IRF820AL
IRF820AL

IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (?)VGS = 10 V 3.0 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Qg (Max.) (nC) 17 Ruggedness Qgs (nC) 4.3 • Fully Characterized Capacitance and Avalanche Voltage and current Qgd (nC) 8.5 • Effective Coss Spec

See also transistors datasheet: IRF7606 , IRF7663 , IRF7805 , IRF7807 , IRF7809 , IRF7811 , IRF820 , IRF820A , IRFZ24N , IRF820AS , IRF820FI , IRF820S , IRF821 , IRF822 , IRF822FI , IRF823 , IRF830 .

Search Terms:

 IRF820AL - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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