IRF820AS MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF820AS

Type of IRF820AS transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 50

Maximum drain-source voltage |Uds|, V: 500V

Maximum gate-source voltage |Ugs|, V: 10

Maximum drain current |Id|, A: 2.5

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF820AS transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 3

Package: D2PAK

Equivalent transistors for IRF820AS

IRF820AS PDF documents for downloads:

1.1. irf820as-al.pdf Size:291K _international_rectifier

PD - 95533 IRF820ASPbF SMPS MOSFET IRF820ALPbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 500V 3.0? 2.5A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and TO-262 D2Pak Avalanche Voltage and Current IRF820AL IRF820AS l Effective COSS specified (See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V† 2.5 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V† 1.6 A IDM Pulsed Drain Current † 10 PD @TC = 25°C Power Dissipation 50 W Linear Derating Factor 0.4 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt ?† 3.4 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounti

1.2. irf820as.pdf Size:133K _international_rectifier

PD- 93774A IRF820AS SMPS MOSFET IRF820AL HEXFET® Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 3.0? 2.5A High speed power switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and TO-262 D2Pak Avalanche Voltage and Current IRF820AL IRF820AS Effective COSS specified (See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 2.5 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 1.6 A IDM Pulsed Drain Current 10 PD @TC = 25°C Power Dissipation 50 W Linear Derating Factor 0.4 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 3.4 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbf•

3.1. irf820a.pdf Size:196K _international_rectifier

PD - 94978 SMPS MOSFET IRF820APbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 500V 3.0? 2.5A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current TO-220AB G D S l Effective COSS specified (See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 2.5 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 1.6 A IDM Pulsed Drain Current 10 PD @TC = 25°C Power Dissipation 50 W Linear Derating Factor 0.4 W/°C VGS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt ? 3.4 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range °C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbf•in (1

3.2. irf820a.pdf Size:917K _samsung

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 3.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 2.000 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 500 o Continuous Drain Current (TC=25 ) C 2.5 ID A Continuous Drain Current (TC=100 oC 1.6 ) IDM Drain Current-Pulsed A 1 8 O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 208 O IAR Avalanche Current 2.5 A 1 O EAR Repetitive Avalanche Energy 1 4.9 mJ O dv/dt Peak Diode Recovery dv/dt 3 3.5 V/ns O Total Power Dissipation (TC=25 o ) C 49 W PD o Linear Derating Factor C 0.39 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 Purpos

3.3. irf820a_sihf820a.pdf Size:204K _vishay

IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (?)VGS = 10 V 3.0 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Qg (Max.) (nC) 17 Ruggedness Qgs (nC) 4.3 • Fully Characterized Capacitance and Avalanche Voltage and current Qgd (nC) 8.5 • Effective Coss Specified Configuration Single • Compliant to RoHS Directive 2002/95/EC D APPLICATIONS TO-220AB • Switch Mode Power Supply (SMPS) • Uninterruptable Power Supply G • High Speed Power Switching S TYPICAL SMPS TOPOLOGIES D G S • Two Transistor Forward • Half bridge N-Channel MOSFET • Full bridge ORDERING INFORMATION Package TO-220AB IRF820APbF Lead (Pb)-free SiHF820A-E3 IRF820A SnPb SiHF820A ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS ± 30 TC = 25 °C 2.5 Continuous Dr

See also transistors datasheet: IRF7663 , IRF7805 , IRF7807 , IRF7809 , IRF7811 , IRF820 , IRF820A , IRF820AL , BF980 , IRF820FI , IRF820S , IRF821 , IRF822 , IRF822FI , IRF823 , IRF830 , IRF830A .

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