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IRF820FI MOSFET (IC) Datasheet. Cross Reference Search. IRF820FI Equivalent

Type Designator: IRF820FI

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd), W: 35

Maximum Drain-Source Voltage |Vds|, V: 500

Maximum Gate-Source Voltage |Vgs|, V: 20

Maximum Drain Current |Id|, A: 2.2

Maximum Junction Temperature (Tj), °C: 150

Rise Time (tr), nS:

Drain-Source Capacitance (Cd), pF: 460

Maximum Drain-Source On-State Resistance (Rds), Ohm: 3

Package: ISOWATT220

IRF820FI Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF820FI PDF doc:

4.1. irf820.pdf Size:296K _st

IRF820FI
IRF820FI

IRF820 N-channel 500V - 2.5? - 4A TO-220 PowerMesh™II MOSFET General features Type VDSS RDS(on) ID IRF820 500V <0.3? 4A ¦ Extremely high dv/dt capability ¦ 100% avalnche tested 3 2 1 ¦ New high voltage benchmark TO-220 ¦ Gate charge minimized Description The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve t

4.2. irf820-1-2-3-fi.pdf Size:478K _st2

IRF820FI
IRF820FI

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4.3. irf820b.pdf Size:858K _fairchild_semi

IRF820FI
IRF820FI

November 2001 IRF820B/IRFS820B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.5A, 500V, RDS(on) = 2.6? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 14 nC) planar, DMOS technology. • Low Crss ( typical 10 pF) This advanced technology has been especially tailored to • Fast switchin

4.4. irf820pbf.pdf Size:2090K _international_rectifier

IRF820FI
IRF820FI

PD - 94979 IRF820PbF • Lead-Free 02/03/04 Document Number: 91059 www.vishay.com 1 IRF820PbF Document Number: 91059 www.vishay.com 2 IRF820PbF Document Number: 91059 www.vishay.com 3 IRF820PbF Document Number: 91059 www.vishay.com 4 IRF820PbF Document Number: 91059 www.vishay.com 5 IRF820PbF Document Number: 91059 www.vishay.com 6 IRF820PbF TO-220AB Package Outline Dime

4.5. irf820.pdf Size:169K _international_rectifier

IRF820FI
IRF820FI

4.6. irf820as.pdf Size:133K _international_rectifier

IRF820FI
IRF820FI

PD- 93774A IRF820AS SMPS MOSFET IRF820AL HEXFET® Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 3.0? 2.5A High speed power switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and TO-262 D2Pak Avalanche

4.7. irf820as-al.pdf Size:291K _international_rectifier

IRF820FI
IRF820FI

PD - 95533 IRF820ASPbF SMPS MOSFET IRF820ALPbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 500V 3.0? 2.5A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and

4.8. irf820a.pdf Size:196K _international_rectifier

IRF820FI
IRF820FI

PD - 94978 SMPS MOSFET IRF820APbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply 500V 3.0? 2.5A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Volta

4.9. irf820s.pdf Size:318K _international_rectifier

IRF820FI
IRF820FI

PD - 95548 IRF820SPbF • Lead-Free 7/22/04 Document Number: 91060 www.vishay.com 1 IRF820SPbF Document Number: 91060 www.vishay.com 2 IRF820SPbF Document Number: 91060 www.vishay.com 3 IRF820SPbF Document Number: 91060 www.vishay.com 4 IRF820SPbF Document Number: 91060 www.vishay.com 5 IRF820SPbF Document Number: 91060 www.vishay.com 6 IRF820SPbF Peak Diode Recovery dv/d

4.10. irf820a.pdf Size:917K _samsung

IRF820FI
IRF820FI

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 3.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 2.000 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Unit

4.11. irf820a_sihf820a.pdf Size:204K _vishay

IRF820FI
IRF820FI

IRF820A, SiHF820A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (?)VGS = 10 V 3.0 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Qg (Max.) (nC) 17 Ruggedness Qgs (nC) 4.3 • Fully Characterized Capacitance and Avalanche Voltage and current Qgd (nC) 8.5 • Effective Coss Spec

4.12. irf820_sihf820.pdf Size:200K _vishay

IRF820FI
IRF820FI

IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 Available • Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 3.0 RoHS* • Fast Switching Qg (Max.) (nC) 24 COMPLIANT • Ease of Paralleling Qgs (nC) 3.3 Qgd (nC) 13 • Simple Drive Requirements Configuration Single • Compliant to RoHS Directive 2002/95/EC DESCRIPTION D Third

See also transistors datasheet: IRF7805 , IRF7807 , IRF7809 , IRF7811 , IRF820 , IRF820A , IRF820AL , IRF820AS , 2SK170 , IRF820S , IRF821 , IRF822 , IRF822FI , IRF823 , IRF830 , IRF830A , IRF830AL .

Search Terms:

 IRF820FI - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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