MOSFET Datasheet



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IRF830
  IRF830
  IRF830
  IRF830
 
IRF830
  IRF830
  IRF830
  IRF830
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553L
2SJ553S ..2SK1516
2SK1517 ..2SK2136
2SK2137 ..2SK2735
2SK2735L ..2SK3125
2SK3126 ..2SK357
2SK3582CT ..2SK4195LS
2SK4196LS ..3N159
3N161 ..40821
40822 ..AO4496
AO4498 ..AOC2423
AOC2800 ..AON2701
AON2705 ..AON7752
AON7754 ..AOU4N60
AOU4S60 ..AP13P15GP-HF
AP13P15GS-HF ..AP30T10GP-HF
AP30T10GS-HF ..AP4800AGM-HF
AP4800BGM-HF ..AP9408AGH
AP9408AGI ..AP9930AGM
AP9930GM-HF ..APT1004RGN
APT1004RKN ..APT50M50L2LL
APT50M50PVR ..AUIRF3710ZS
AUIRF3805 ..AUIRLR3915
AUIRLS3034 ..BLF202
BLF2043F ..BSB028N06NN3G
BSB053N03LPG ..BSS123
BSS123A ..BUK653R7-30C
BUK654R0-75C ..BUK9217-75B
BUK9219-55A ..BUZ50A-TO220M
BUZ50ASM ..CED20P10
CED21A2 ..CEP02N7G
CEP02N9 ..CPH3355
CPH3356 ..DMP210DUDJ
DMP210DUFB4 ..FCP9N60N
FCPF11N60 ..FDC642P_F085
FDC645N ..FDM3622
FDM47-06KC5 ..FDMS7608S
FDMS7620S ..FDP8860
FDP8870 ..FDS8926A
FDS8928A ..FQB1P50
FQB22P10 ..FQPF3N25
FQPF3N80C ..FRS240R
FRS244D ..H5N2008P
H5N2301PF ..HAT2080R
HAT2080T ..HUF75332S3S
HUF75333G3 ..IPB022N04LG
IPB023N04NG ..IPD14N06S2-80
IPD15N06S2L-64 ..IPI80N04S3-06
IPI80N04S3-H4 ..IPP90R1K0C3
IPP90R1K2C3 ..IRF2807
IRF2807L ..IRF644
IRF644A ..IRF7450
IRF7451 ..IRF9533
IRF9540 ..IRFH3702
IRFH3707 ..IRFP140
IRFP1405 ..IRFR3411
IRFR3504Z ..IRFS750A
IRFS820 ..IRFW520A
IRFW530A ..IRL8113
IRL8113L ..IRLU3717
IRLU3802 ..IXFH16N120P
IXFH16N50P ..IXFK64N50Q3
IXFK64N60P ..IXFP8N50PM
IXFQ10N80P ..IXFV74N20PS
IXFV96N15P ..IXTA32P20T
IXTA36N30P ..IXTH41N25
IXTH420N04T2 ..IXTP1R4N120P
IXTP1R4N60P ..IXTT16N10D2
IXTT16N20D2 ..K4059
K596 ..KMB7D0DN40QB
KMB7D0N40QA ..LKK47-06C5
LS3954 ..MTB40P04J3
MTB40P06J3 ..MTN2572F3
MTN2572FP ..MTP6N60
MTP7425Q8 ..NTD20N06L
NTD20P06L ..NTR4503N
NTS2101P ..PHT6N06T
PHT6NQ10T ..PSMN1R5-25YL
PSMN1R5-30YL ..RF1S60P03SM
RF1S630SM ..RJK03E7DPA
RJK03E8DPA ..RQK0201QGDQA
RQK0202RGDQA ..SDF100NA40HI
SDF100NA40JD ..SFR9014
SFR9024 ..SMG2310N
SMG2314N ..SML40M42BFN
SML40M80AFN ..SPA11N60CFD
SPA11N65C3 ..SSE70N10-44P
SSE90N04-03P ..SSM3J305T
SSM3J306T ..SSM6P15FE
SSM6P15FU ..STB200N6F3
STB200NF03 ..STD3N30-1
STD3N30L ..STF2HNK60Z
STF2N62K3 ..STK9N10
STL100N1VH5 ..STP14NM50N
STP14NM65N ..STP5N50FI
STP5N52K3 ..STS4DPF30L
STS4NF100 ..STU622S
STU624S ..TF256TH
TF408 ..TK80X04K3
TK8A10K3 ..TPCA8048-H
TPCA8049-H ..UP9T15G
URFP150 ..WTC2306
WTC2312 ..ZXMP10A17G
ZXMP10A17K ..ZXMS6006SG
 
IRF830 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF830 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF830

Type of IRF830 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 100

Maximum drain-source voltage |Uds|, V: 500

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 4.5

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF830 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 800

Maximum drain-source on-state resistance (Rds), Ohm: 1.5

Package: TO220

Equivalent transistors for IRF830 - Cross-Reference Search

IRF830 PDF doc:

1.1. irf830_1.pdf Size:58K _philips

IRF830
IRF830
Philips Semiconductors Product specification PowerMOS transistor IRF830 Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V High thermal cycling performance Low thermal resistance ID = 5.9 A g RDS(ON) ? 1.5 ? s GENERAL DESCRIPTION PINNING SOT78 (TO220AB) N-channel, enhancement mode PIN DESCRIPTION tab field-effect power transistor, intended for use in off-line switched 1 gate mode power supplies, T.V. and computer monitor power supplies, 2 drain d.c. to d.c. converters, motor control circuits and general purpose 3 source switching applications. tab drain 1 2 3 The IRF830 is supplied in the SOT78 (TO220AB) conventional leaded package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drain-source voltage Tj = 25 ?C to 150?C - 500 V VDGR Drain-gate voltage Tj = 25 ?C to 150?C; RGS = 20 k? - 500 V

1.2. irf830.pdf Size:92K _st

IRF830
IRF830
IRF830 ? N - CHANNEL 500V - 1.35? - 4.5A - TO-220 PowerMESH? MOSFET TYPE VDSS RDS(on) ID IRF830 500 V < 1.5 ? 4.5 A TYPICAL R = 1.35 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 DESCRIPTION 2 This power MOSFET is designed using the 1 companys consolidated strip layout-based MESH OVERLAY? process. This technology matches TO-220 and improves the performances compared with standard parts from various sources. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) INTERNAL SCHEMATIC DIAGRAM DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V = 0) 500 V DS GS VDGR 500 V Drain- gate Voltage (R = 20 k?) GS VGS Gate-source Voltage 20 V o I Drain Current (continuous) at T = 25 C4.5 A D c o I Drain Current (continuous) at T = 100 C

1.3. irf830-1-2-3-fi.pdf Size:481K _st2

IRF830
IRF830

1.4. irf830b.pdf Size:888K _fairchild_semi

IRF830
IRF830
November 2001 IRF830B/IRFS830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 500V, RDS(on) = 1.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC) planar, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter IRF830B IRFS830 Units VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25C) 4

1.5. irf830apbf.pdf Size:168K _international_rectifier

IRF830
IRF830
PD- 94820 SMPS MOSFET IRF830APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 1.40? 5.0A High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current G D S TO-220AB Effective Coss specified ( See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V 5.0 ID @ TC = 100C Continuous Drain Current, VGS @ 10V 3.2 A IDM Pulsed Drain Current 20 PD @TC = 25C Power Dissipation 74 W Linear Derating Factor 0.59 W/C VGS Gate-to-Source Voltage 30 V dv/dt Peak Diode Recovery dv/dt 5.3 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbfin (1.1N

1.6. irf830as.pdf Size:155K _international_rectifier

IRF830
IRF830
PD- 92006A SMPS MOSFET IRF830AS/L HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40? 5.0A High Speed Power Switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current D2Pak TO-262 Effective Coss specified (See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V 5.0 ID @ TC = 100C Continuous Drain Current, VGS @ 10V 3.2 A IDM Pulsed Drain Current 20 PD @TA = 25C Power Dissipation 3.1 W PD @TC = 25C Power Dissipation 74 Linear Derating Factor 0.59 W/C VGS Gate-to-Source Voltage 30 V dv/dt Peak Diode Recovery dv/dt 5.3 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Typical SMPS Topologies: Two

1.7. irf830as-lpbf.pdf Size:676K _international_rectifier

IRF830
IRF830
PD- 95139 SMPS MOSFET IRF830AS/LPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40? 5.0A High Speed Power Switching Lead-Free Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current D2Pak TO-262 Effective Coss specified (See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V 5.0 ID @ TC = 100C Continuous Drain Current, VGS @ 10V 3.2 A IDM Pulsed Drain Current 20 PD @TA = 25C Power Dissipation 3.1 W PD @TC = 25C Power Dissipation 74 Linear Derating Factor 0.59 W/C VGS Gate-to-Source Voltage 30 V dv/dt Peak Diode Recovery dv/dt 5.3 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Typical SMPS

1.8. irf830a.pdf Size:108K _international_rectifier

IRF830
IRF830
PD- 91878C SMPS MOSFET IRF830A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 1.40? 5.0A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current G D S TO-220AB Effective Coss specified ( See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V 5.0 ID @ TC = 100C Continuous Drain Current, VGS @ 10V 3.2 A IDM Pulsed Drain Current 20 PD @TC = 25C Power Dissipation 74 W Linear Derating Factor 0.59 W/C VGS Gate-to-Source Voltage 30 V dv/dt Peak Diode Recovery dv/dt 5.3 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbfin (1.1Nm) Typical SMPS

1.9. irf830.pdf Size:875K _international_rectifier

IRF830
IRF830
PD - 94881 IRF830PbF Lead-Free 12/10/03 Document Number: 91063 www.vishay.com 1 IRF830PbF Document Number: 91063 www.vishay.com 2 IRF830PbF Document Number: 91063 www.vishay.com 3 IRF830PbF Document Number: 91063 www.vishay.com 4 IRF830PbF Document Number: 91063 www.vishay.com 5 IRF830PbF Document Number: 91063 www.vishay.com 6 IRF830PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045)

1.10. irf830s.pdf Size:326K _international_rectifier

IRF830
IRF830
PD - 95542 IRF830SPbF Lead-Free SMD-220 7/21/04 Document Number: 91064 www.vishay.com 1 IRF830SPbF Document Number: 91064 www.vishay.com 2 IRF830SPbF Document Number: 91064 www.vishay.com 3 IRF830SPbF Document Number: 91064 www.vishay.com 4 IRF830SPbF Document Number: 91064 www.vishay.com 5 IRF830SPbF Document Number: 91064 www.vishay.com 6 IRF830SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + - + - dv/dt controlled by RG + ISD controlled by Duty Factor "D" - D.U.T. - Device Under Test * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = Period P.W. VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curen

1.11. irfp430-433_irf830-833.pdf Size:345K _samsung

IRF830
IRF830


1.12. irf830a.pdf Size:911K _samsung

IRF830
IRF830
Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology ? RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 1.169 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 500 o C Continuous Drain Current (TC=25 ) 4.5 ID A Continuous Drain Current (TC=100 oC 2.9 ) IDM Drain Current-Pulsed 1 18 A O _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 mJ 338 O IAR Avalanche Current 1 4.5 A O EAR Repetitive Avalanche Energy 1 mJ 7.3 O 3 dv/dt Peak Diode Recovery dv/dt V/ns 3.5 O Total Power Dissipation (TC=25 oC) 73 W PD o Linear Derating Factor 0.58 C Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 P

1.13. irf830_sihf830.pdf Size:201K _vishay

IRF830
IRF830
IRF830, SiHF830 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 1.5 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 5.0 Qgd (nC) 22 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation S D levels to approximately 50 W. The low thermal resistance S G and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF830PbF Lead (Pb)-free SiHF830-E3 IRF830 SnPb SiHF830 ABSOLUTE

1.14. irf830a_sihf830a.pdf Size:1091K _vishay

IRF830
IRF830
IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (?)VGS = 10 V 1.4 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 24 COMPLIANT Ruggedness Qgs (nC) 6.3 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 11 and Current Configuration Single Effective Coss Specified Compliant to RoHS Directive 2002/95/EC D TO-220AB APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptable Power Supply G High Speed power Switching TYPICAL SMPS TOPOLOGIES S D G Two Transistor Forward S Half Bridge N-Channel MOSFET Full Bridge ORDERING INFORMATION Package TO-220AB IRF830APbF Lead (Pb)-free SiHF830A-E3 IRF830A SnPb SiHF830A ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS 30 TC = 25 C 5.0 Continuous D

1.15. irf830.rev0.pdf Size:62K _onsemi

IRF830
IRF830
IRF830 Power Field Effect Transistor NChannel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. http://onsemi.com Silicon Gate for Fast Switching Speeds TMOS POWER FET Low RDS(on) to Minimize OnLosses, Specified at Elevated Temperature 4.5 AMPERES Rugged SOA is Power Dissipation Limited 500 VOLTS SourcetoDrain Diode Characterized for Use with Inductive Loads RDS(on) = 1.5 ? NChannel MAXIMUM RATINGS D Rating Symbol Value Unit DrainSource Voltage VDSS 500 Vdc DrainGate Voltage (RGS = 1.0 M?) VDGR 500 Vdc G ? GateSource Voltage VGS " 20 Vdc S Drain Current ID Adc Continuous, TC = 25C 4.5 Continuous, TC = 100C 3.0 Peak, TC = 25C 18 Total Power Dissipation @ TC = 25C PD 75 Watts 4 Derate above 25C 0.6 W/C Operating and Storage TJ, Tstg 55 to 150 C Temperature Range THERMAL CHARACTERISTICS

1.16. irf830.pdf Size:114K _inchange_semiconductor

IRF830
IRF830
MOSFET INCHANGE IRF830 N-channel mosfet transistor Features With TO-220 package Ў¤ Simple drive requirements Ў¤ Fast switching Ў¤ VDSS=500V; RDS(ON)ЎЬ 1.5¦ё ;ID=4.5A Ў¤ 1.gate 2.drain 3.source Ў¤ 123 Absolute Maximum Ratings Tc=25Ўж SYMBOL VDSS VGS ID PARAMETER Drain-source voltage (VGS=0) Gate-source voltage Drain Current-continuous@ TC=25Ўж Total Dissipation@TC=25Ўж ЎА RATING 500 20 4.5 UNIT V V A Ptot Tj Tstg SYMBOL V(BR)DSS VGS(TH) RDS(ON) IGSS IDSS VSD TOR NDU TO-220 ICO E SEM Electrical Characteristics Tc=25Ўж ANG INCH 100 W Max. Operating Junction temperature Storage temperature 150 Ўж Ўж -65~150 PARAMETER CONDITIONS MIN MAX UNIT Drain-source breakdown voltage VGS=0; ID=0.25mA 500 2 V Gate threshold voltage Drain-source on-stage resistance Gate source leakage current Zero gate voltage drain current Diode forward voltage VDS= VGS; ID=0.25mA VGS=10V; ID=2.7A VGS=ЎА 20V;VDS=0 4 1.5 ЎА 100

1.17. hirf830.pdf Size:46K _hsmc

IRF830
IRF830
Spec. No. : MOS200407 HI-SINCERITY Issued Date : 2004.10.01 Revised Date : 2005.04.22 MICROELECTRONICS CORP. Page No. : 1/4 HIRF830 Series Pin Assignment HIRF830 / HIRF830F Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Description Pin 3: Source This N - Channel MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on- 3 resistance and cost-effectiveness. 2 1 Features 3-Lead Plastic TO-220FP Package Code: F • Dynamic dv/dt Rating Pin 1: Gate • Repetitive Avalanche Rated Pin 2: Drain • Fast Switching Pin 3: Source • Ease of Paralleling • Simple Drive Requirements 3 2 1 Thermal Characteristics HIRF830 Series Symbol Symbol Parameter Value Units D TO-220AB 1.71 Thermal Resistance R?JC Junction to Case Max. °C/W TO-220FP 3.3 G Thermal Resistance S R?JA Junction to Ambient Max. 62 °C/W Absolute Maximum Ratings Symbol Parameter Value U

1.18. irf830i-hf.pdf Size:95K _a-power

IRF830
IRF830
IRF830I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Ease of Paralleling D BVDSS 500V Ў Fast Switching Characteristic RDS(ON) 1.5? Ў Simple Drive Requirement ID 4.5A G Ў RoHS Compliant & Halogen-Free S Description G APEC MOSFET provide the power designer with the best combination of D TO-220CFM(I) S fast switching , lower on-resistance and reasonable cost. The TO-220CFM isolation package is widely preferred for commercial- industrial through hole applications. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage +20 V ID@TC=25? Continuous Drain Current, VGS @ 10V 4.5 A ID@TC=100? Continuous Drain Current, VGS @ 10V 2.8 A IDM Pulsed Drain Current1 18 A PD@TC=25? Total Power Dissipation 36.7 W EAS Single Pulse Avalanche Energy2 101 mJ IAR Avalanche Current 4.5 A TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junction Temperature Range

1.19. irf830.pdf Size:95K _a-power

IRF830
IRF830
IRF830 RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Ease of Paralleling D BVDSS 500V Ў Fast Switching Characteristic RDS(ON) 1.5? Ў Simple Drive Requirement ID 4.5A G S Description G TO-220(P) D APEC MOSFET provide the power designer with the best combination of fast S switching , lower on-resistance and reasonable cost. The TO-220 and package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±20 V ID@TC=25? Continuous Drain Current, VGS @ 10V 4.5 A ID@TC=100? Continuous Drain Current, VGS @ 10V 2.8 A IDM Pulsed Drain Current1 18 A PD@TC=25? Total Power Dissipation 74 W Linear Derating Factor 0.59 W/? EAS Single Pulse Avalanche Energy2 101 mJ IAR Avalanche C

See also transistors datasheet: IRF820AL , IRF820AS , IRF820FI , IRF820S , IRF821 , IRF822 , IRF822FI , IRF823 , IRF9530 , IRF830A , IRF830AL , IRF830AS , IRF830FI , IRF830S , IRF831 , IRF831FI , IRF832 .

Keywords

 IRF830 Datasheet  IRF830 Datenblatt  IRF830 RoHS  IRF830 Distributor
 IRF830 Application Notes  IRF830 Component  IRF830 Circuit  IRF830 Schematic
 IRF830 Equivalent  IRF830 Cross Reference  IRF830 Data Sheet  IRF830 Fiche Technique

 

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