MOSFET Datasheet


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IRF830
  IRF830
  IRF830
 
IRF830
  IRF830
  IRF830
 
IRF830
  IRF830
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AP10N70P-A
AP10N70R-A ..AP2R403AGMT-HF
AP2R403GMT-HF ..AP4533GEM-HF
AP4537GYT-HF ..AP92T03GP-HF
AP92T03GS-HF ..AP98T06GI-HF
AP98T06GP ..APT10088HVR
APT10M07JVR ..AUIRF2907Z
AUIRF2907ZS-7P ..AUIRLR2703
AUIRLR2905 ..BLD6G21L-50
BLD6G21LS-50 ..BS107PT
BS108 ..BSP322P
BSP603S2L ..BUK6228-55C
BUK6246-75C ..BUK7Y20-30B
BUK7Y25-40B ..BUZ326
BUZ32H ..CED04N7G
CED05N65 ..CEM9435A
CEM9436A ..CEU83A3
CEU83A3G ..DMP2004TK
DMP2004VK ..FCP9N60N
FCP9N60N ..FDC86244
FDD050N03B ..FDMA0104
FDMA1023PZ ..FDMS8026S
FDMS8027S ..FDPF39N20
FDPF39N20 ..FDS8928A
FDS8934A ..FQAF13N80
FQAF16N50 ..FQP6N80C
FQP6N90C ..FRL230R4
FRL234D ..GWM100-0085X1-SL
GWM100-0085X1-SL ..HAT1023R
HAT1024R ..HAT3018R
HAT3019R ..HUFA76413DK8T_F085
HUFA76419D3S ..IPB65R660CFD
IPB70N04S3-07 ..IPI04CN10NG
IPI052NE7N3G ..IPP50R520CP
IPP530N15N3G ..IRCZ345
IRCZ445 ..IRF543
IRF543FI ..IRF7314
IRF7314Q ..IRF8313
IRF831FI ..IRFBC40AS
IRFBC40L ..IRFIZ34A
IRFIZ34E ..IRFPC40
IRFPC48 ..IRFS4410
IRFS4410Z ..IRFU220
IRFU220A ..IRL3302
IRL3302S ..IRLR3915
IRLR6225 ..IXFC60N20
IXFC74N20P ..IXFK180N085
IXFK180N10 ..IXFN44N50
IXFN44N50Q ..IXFT52N50P2
IXFT58N20 ..IXTA110N055T7
IXTA120N04T2 ..IXTH1N250
IXTH200N075T ..IXTN22N100L
IXTN30N100L ..IXTQ26N60P
IXTQ26P20P ..IXTY48P05T
IXTY4N60P ..KHB8D8N25F2
KHB8D8N25P ..KP780V9
KP784A ..MTB04N03J3
MTB04N03Q8 ..MTEF1P15Q8
MTEF1P15V8 ..MTP20N15E
MTP2301N3 ..NDS355AN
NDS356AP ..NTMFS4833NS
NTMFS4834N ..PHK12NQ03LT
PHK12NQ10T ..PSMN004-60B
PSMN005-30K ..RAF040P01
RAL025P01 ..RJK0223DNS
RJK0225DNS ..RJL5013DPE
RJL5014DPK ..RZR020P01
RZR025P01 ..SFI9640
SFI9644 ..SKP202
SKP253 ..SML4065BN
SML4065CN ..SPB07N60S5
SPB08P06PG ..SSF7N60A
SSF7N80A ..SSM3K03FE
SSM3K03FV ..SSP3N70
SSP3N70A ..STB45NF06
STB4N62K3 ..STD5NM50
STD5NM50-1 ..STH26N25FI
STH270N4F3-6 ..STP11NM80
STP120N4F6 ..STP50N06FI
STP50N06L ..STT3585
STT3599C ..SUN1060F
SUN1060I2 ..TK65A10N1
TK65E10N1 ..TPCA8003-H
TPCA8004-H ..UF460
UF4N20 ..VKM60-01P1
VMK165-007T ..ZXMN3A06DN8
ZXMN3A14F ..ZXMS6006SG
 
IRF830 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

IRF830 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: IRF830

Type of IRF830 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 100

Maximum drain-source voltage |Uds|, V: 500

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 4.5

Maximum junction temperature (Tj), °C: 150

Rise Time of IRF830 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 800

Maximum drain-source on-state resistance (Rds), Ohm: 1.5

Package: TO220

Equivalent transistors for IRF830

IRF830 PDF doc:

1.1. irf830_1.pdf Size:58K _philips

IRF830
IRF830
Philips Semiconductors Product specification PowerMOS transistor IRF830 Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V High thermal cycling performance Low thermal resistance ID = 5.9 A g RDS(ON) ? 1.5 ? s GENERAL DESCRIPTION PINNING SOT78 (TO220AB) N-channel, enhancement mode PIN DESCRIPTION tab field-effect power transistor, intended for use in off-line switched 1 gate mode power supplies, T.V. and computer monitor power supplies, 2 drain d.c. to d.c. converters, motor control circuits and general purpose 3 source switching applications. tab drain 1 2 3 The IRF830 is supplied in the SOT78 (TO220AB) conventional leaded package. LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drain-source voltage Tj = 25 ?C to 150?C - 500 V VDGR Drain-gate voltage Tj = 25 ?C to 150?C; RGS = 20 k? - 500 V

1.2. irf830.pdf Size:92K _st

IRF830
IRF830
IRF830 ? N - CHANNEL 500V - 1.35? - 4.5A - TO-220 PowerMESH? MOSFET TYPE VDSS RDS(on) ID IRF830 500 V < 1.5 ? 4.5 A TYPICAL R = 1.35 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 DESCRIPTION 2 This power MOSFET is designed using the 1 companys consolidated strip layout-based MESH OVERLAY? process. This technology matches TO-220 and improves the performances compared with standard parts from various sources. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) INTERNAL SCHEMATIC DIAGRAM DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Drain-source Voltage (V = 0) 500 V DS GS VDGR 500 V Drain- gate Voltage (R = 20 k?) GS VGS Gate-source Voltage 20 V o I Drain Current (continuous) at T = 25 C4.5 A D c o I Drain Current (continuous) at T = 100 C

1.3. irf830-1-2-3-fi.pdf Size:481K _st2

IRF830
IRF830

1.4. irf830b.pdf Size:888K _fairchild_semi

IRF830
IRF830
November 2001 IRF830B/IRFS830B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 4.5A, 500V, RDS(on) = 1.5? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 27 nC) planar, DMOS technology. Low Crss ( typical 17 pF) This advanced technology has been especially tailored to Fast switching minimize on-state resistance, provide superior switching 100% avalanche tested performance, and withstand high energy pulse in the Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. D G TO-220 TO-220F G D S G D S IRF Series IRFS Series S Absolute Maximum Ratings TC = 25C unless otherwise noted Symbol Parameter IRF830B IRFS830 Units VDSS Drain-Source Voltage 500 V ID Drain Current - Continuous (TC = 25C) 4

1.5. irf830apbf.pdf Size:168K _international_rectifier

IRF830
IRF830
PD- 94820 SMPS MOSFET IRF830APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 1.40? 5.0A High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current G D S TO-220AB Effective Coss specified ( See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V 5.0 ID @ TC = 100C Continuous Drain Current, VGS @ 10V 3.2 A IDM Pulsed Drain Current 20 PD @TC = 25C Power Dissipation 74 W Linear Derating Factor 0.59 W/C VGS Gate-to-Source Voltage 30 V dv/dt Peak Diode Recovery dv/dt 5.3 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbfin (1.1N

1.6. irf830as.pdf Size:155K _international_rectifier

IRF830
IRF830
PD- 92006A SMPS MOSFET IRF830AS/L HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40? 5.0A High Speed Power Switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current D2Pak TO-262 Effective Coss specified (See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V 5.0 ID @ TC = 100C Continuous Drain Current, VGS @ 10V 3.2 A IDM Pulsed Drain Current 20 PD @TA = 25C Power Dissipation 3.1 W PD @TC = 25C Power Dissipation 74 Linear Derating Factor 0.59 W/C VGS Gate-to-Source Voltage 30 V dv/dt Peak Diode Recovery dv/dt 5.3 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Typical SMPS Topologies: Two

1.7. irf830as-lpbf.pdf Size:676K _international_rectifier

IRF830
IRF830
PD- 95139 SMPS MOSFET IRF830AS/LPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40? 5.0A High Speed Power Switching Lead-Free Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current D2Pak TO-262 Effective Coss specified (See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V 5.0 ID @ TC = 100C Continuous Drain Current, VGS @ 10V 3.2 A IDM Pulsed Drain Current 20 PD @TA = 25C Power Dissipation 3.1 W PD @TC = 25C Power Dissipation 74 Linear Derating Factor 0.59 W/C VGS Gate-to-Source Voltage 30 V dv/dt Peak Diode Recovery dv/dt 5.3 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Typical SMPS

1.8. irf830a.pdf Size:108K _international_rectifier

IRF830
IRF830
PD- 91878C SMPS MOSFET IRF830A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 1.40? 5.0A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current G D S TO-220AB Effective Coss specified ( See AN 1001) Absolute Maximum Ratings Parameter Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V 5.0 ID @ TC = 100C Continuous Drain Current, VGS @ 10V 3.2 A IDM Pulsed Drain Current 20 PD @TC = 25C Power Dissipation 74 W Linear Derating Factor 0.59 W/C VGS Gate-to-Source Voltage 30 V dv/dt Peak Diode Recovery dv/dt 5.3 V/ns TJ Operating Junction and -55 to + 150 TSTG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbfin (1.1Nm) Typical SMPS

1.9. irf830.pdf Size:875K _international_rectifier

IRF830
IRF830
PD - 94881 IRF830PbF Lead-Free 12/10/03 Document Number: 91063 www.vishay.com 1 IRF830PbF Document Number: 91063 www.vishay.com 2 IRF830PbF Document Number: 91063 www.vishay.com 3 IRF830PbF Document Number: 91063 www.vishay.com 4 IRF830PbF Document Number: 91063 www.vishay.com 5 IRF830PbF Document Number: 91063 www.vishay.com 6 IRF830PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A - 1.32 (.052) 1.22 (.048) 6.47 (.255) 6.10 (.240) 4 15.24 (.600) 14.84 (.584) LEAD ASSIGNMENTS 1.15 (.045) LEAD ASSIGNMENTS HEXFET GATE IGBTs, CoPACK MIN 1 - 1 2 3 2 - 1- GATE DRAIN 1- GATE 3 - SOURCE 2- DRAIN 2- COLLECTOR 3- SOURCE 3- EMITTER 4 - DRAIN 4- DRAIN 4- COLLECTOR 14.09 (.555) 4.06 (.160) 13.47 (.530) 3.55 (.140) 0.93 (.037) 0.55 (.022) 3X 3X 0.69 (.027) 0.46 (.018) 1.40 (.055) 3X 1.15 (.045)

1.10. irf830s.pdf Size:326K _international_rectifier

IRF830
IRF830
PD - 95542 IRF830SPbF Lead-Free SMD-220 7/21/04 Document Number: 91064 www.vishay.com 1 IRF830SPbF Document Number: 91064 www.vishay.com 2 IRF830SPbF Document Number: 91064 www.vishay.com 3 IRF830SPbF Document Number: 91064 www.vishay.com 4 IRF830SPbF Document Number: 91064 www.vishay.com 5 IRF830SPbF Document Number: 91064 www.vishay.com 6 IRF830SPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - + - + - dv/dt controlled by RG + ISD controlled by Duty Factor "D" - D.U.T. - Device Under Test * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. Period D = Period P.W. VGS=10V D.U.T. ISD Waveform Reverse Recovery Body Diode Forward Current Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Body Diode Forward Drop Inductor Curen

1.11. irf830a.pdf Size:911K _samsung

IRF830
IRF830
Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology ? RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 1.169 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 500 o C Continuous Drain Current (TC=25 ) 4.5 ID A Continuous Drain Current (TC=100 oC 2.9 ) IDM Drain Current-Pulsed 1 18 A O _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 mJ 338 O IAR Avalanche Current 1 4.5 A O EAR Repetitive Avalanche Energy 1 mJ 7.3 O 3 dv/dt Peak Diode Recovery dv/dt V/ns 3.5 O Total Power Dissipation (TC=25 oC) 73 W PD o Linear Derating Factor 0.58 C Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 P

1.12. irf830_sihf830.pdf Size:201K _vishay

IRF830
IRF830
IRF830, SiHF830 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 1.5 RoHS* Fast Switching Qg (Max.) (nC) 38 COMPLIANT Ease of Paralleling Qgs (nC) 5.0 Qgd (nC) 22 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and G cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation S D levels to approximately 50 W. The low thermal resistance S G and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRF830PbF Lead (Pb)-free SiHF830-E3 IRF830 SnPb SiHF830 ABSOLUTE

1.13. irf830a_sihf830a.pdf Size:1091K _vishay

IRF830
IRF830
IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (?)VGS = 10 V 1.4 RoHS* Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 24 COMPLIANT Ruggedness Qgs (nC) 6.3 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 11 and Current Configuration Single Effective Coss Specified Compliant to RoHS Directive 2002/95/EC D TO-220AB APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptable Power Supply G High Speed power Switching TYPICAL SMPS TOPOLOGIES S D G Two Transistor Forward S Half Bridge N-Channel MOSFET Full Bridge ORDERING INFORMATION Package TO-220AB IRF830APbF Lead (Pb)-free SiHF830A-E3 IRF830A SnPb SiHF830A ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS 30 TC = 25 C 5.0 Continuous D

1.14. irf830.rev0.pdf Size:62K _onsemi

IRF830
IRF830
IRF830 Power Field Effect Transistor NChannel Enhancement Mode Silicon Gate TMOS This TMOS Power FET is designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. http://onsemi.com Silicon Gate for Fast Switching Speeds TMOS POWER FET Low RDS(on) to Minimize OnLosses, Specified at Elevated Temperature 4.5 AMPERES Rugged SOA is Power Dissipation Limited 500 VOLTS SourcetoDrain Diode Characterized for Use with Inductive Loads RDS(on) = 1.5 ? NChannel MAXIMUM RATINGS D Rating Symbol Value Unit DrainSource Voltage VDSS 500 Vdc DrainGate Voltage (RGS = 1.0 M?) VDGR 500 Vdc G ? GateSource Voltage VGS " 20 Vdc S Drain Current ID Adc Continuous, TC = 25C 4.5 Continuous, TC = 100C 3.0 Peak, TC = 25C 18 Total Power Dissipation @ TC = 25C PD 75 Watts 4 Derate above 25C 0.6 W/C Operating and Storage TJ, Tstg 55 to 150 C Temperature Range THERMAL CHARACTERISTICS

1.15. irf830.pdf Size:114K _inchange_semiconductor

IRF830
IRF830
MOSFET INCHANGE IRF830 N-channel mosfet transistor Features With TO-220 package Ў¤ Simple drive requirements Ў¤ Fast switching Ў¤ VDSS=500V; RDS(ON)ЎЬ 1.5¦ё ;ID=4.5A Ў¤ 1.gate 2.drain 3.source Ў¤ 123 Absolute Maximum Ratings Tc=25Ўж SYMBOL VDSS VGS ID PARAMETER Drain-source voltage (VGS=0) Gate-source voltage Drain Current-continuous@ TC=25Ўж Total Dissipation@TC=25Ўж ЎА RATING 500 20 4.5 UNIT V V A Ptot Tj Tstg SYMBOL V(BR)DSS VGS(TH) RDS(ON) IGSS IDSS VSD TOR NDU TO-220 ICO E SEM Electrical Characteristics Tc=25Ўж ANG INCH 100 W Max. Operating Junction temperature Storage temperature 150 Ўж Ўж -65~150 PARAMETER CONDITIONS MIN MAX UNIT Drain-source breakdown voltage VGS=0; ID=0.25mA 500 2 V Gate threshold voltage Drain-source on-stage resistance Gate source leakage current Zero gate voltage drain current Diode forward voltage VDS= VGS; ID=0.25mA VGS=10V; ID=2.7A VGS=ЎА 20V;VDS=0 4 1.5 ЎА 100

1.16. hirf830.pdf Size:46K _hsmc

IRF830
IRF830
Spec. No. : MOS200407 HI-SINCERITY Issued Date : 2004.10.01 Revised Date : 2005.04.22 MICROELECTRONICS CORP. Page No. : 1/4 HIRF830 Series Pin Assignment HIRF830 / HIRF830F Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Description Pin 3: Source This N - Channel MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on- 3 resistance and cost-effectiveness. 2 1 Features 3-Lead Plastic TO-220FP Package Code: F • Dynamic dv/dt Rating Pin 1: Gate • Repetitive Avalanche Rated Pin 2: Drain • Fast Switching Pin 3: Source • Ease of Paralleling • Simple Drive Requirements 3 2 1 Thermal Characteristics HIRF830 Series Symbol Symbol Parameter Value Units D TO-220AB 1.71 Thermal Resistance R?JC Junction to Case Max. °C/W TO-220FP 3.3 G Thermal Resistance S R?JA Junction to Ambient Max. 62 °C/W Absolute Maximum Ratings Symbol Parameter Value U

1.17. irf830i-hf.pdf Size:95K _a-power

IRF830
IRF830
IRF830I-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Ease of Paralleling D BVDSS 500V Ў Fast Switching Characteristic RDS(ON) 1.5? Ў Simple Drive Requirement ID 4.5A G Ў RoHS Compliant & Halogen-Free S Description G APEC MOSFET provide the power designer with the best combination of D TO-220CFM(I) S fast switching , lower on-resistance and reasonable cost. The TO-220CFM isolation package is widely preferred for commercial- industrial through hole applications. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage +20 V ID@TC=25? Continuous Drain Current, VGS @ 10V 4.5 A ID@TC=100? Continuous Drain Current, VGS @ 10V 2.8 A IDM Pulsed Drain Current1 18 A PD@TC=25? Total Power Dissipation 36.7 W EAS Single Pulse Avalanche Energy2 101 mJ IAR Avalanche Current 4.5 A TSTG Storage Temperature Range -55 to 150 ? TJ Operating Junction Temperature Range

1.18. irf830.pdf Size:95K _a-power

IRF830
IRF830
IRF830 RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Ease of Paralleling D BVDSS 500V Ў Fast Switching Characteristic RDS(ON) 1.5? Ў Simple Drive Requirement ID 4.5A G S Description G TO-220(P) D APEC MOSFET provide the power designer with the best combination of fast S switching , lower on-resistance and reasonable cost. The TO-220 and package is universally preferred for all commercial-industrial applications. The device is suited for switch mode power supplies ,DC-AC converters and high current high speed switching circuits. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage ±20 V ID@TC=25? Continuous Drain Current, VGS @ 10V 4.5 A ID@TC=100? Continuous Drain Current, VGS @ 10V 2.8 A IDM Pulsed Drain Current1 18 A PD@TC=25? Total Power Dissipation 74 W Linear Derating Factor 0.59 W/? EAS Single Pulse Avalanche Energy2 101 mJ IAR Avalanche C

See also transistors datasheet: IRF820AL , IRF820AS , IRF820FI , IRF820S , IRF821 , IRF822 , IRF822FI , IRF823 , IRF9530 , IRF830A , IRF830AL , IRF830AS , IRF830FI , IRF830S , IRF831 , IRF831FI , IRF832 .

Keywords

 IRF830 Datasheet  IRF830 Datenblatt  IRF830 RoHS  IRF830 Distributor
 IRF830 Application Notes  IRF830 Component  IRF830 Circuit  IRF830 Schematic
 IRF830 Equivalent  IRF830 Cross Reference  IRF830 Data Sheet  IRF830 Fiche Technique

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