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IRF830A MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF830A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 74 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 620 pF

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: TO220

IRF830A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF830A PDF doc:

1.1. irf830as.pdf Size:155K _international_rectifier

IRF830A
IRF830A

PD- 92006A SMPS MOSFET IRF830AS/L HEXFET® Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40? 5.0A High Speed Power Switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current D2

1.2. irf830as-lpbf.pdf Size:676K _international_rectifier

IRF830A
IRF830A

PD- 95139 SMPS MOSFET IRF830AS/LPbF HEXFET® Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 500V 1.40? 5.0A High Speed Power Switching Lead-Free Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage a

1.3. irf830a.pdf Size:108K _international_rectifier

IRF830A
IRF830A

PD- 91878C SMPS MOSFET IRF830A HEXFET® Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 1.40? 5.0A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current G D

1.4. irf830apbf.pdf Size:168K _international_rectifier

IRF830A
IRF830A

PD- 94820 SMPS MOSFET IRF830APbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 1.40? 5.0A High speed power switching Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage an

1.5. irf830a.pdf Size:911K _samsung

IRF830A
IRF830A

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology ? RDS(on) = 1.5 Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.5 A Improved Gate Charge Extended Safe Operating Area µ Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 1.169 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Uni

1.6. irf830a_sihf830a.pdf Size:1091K _vishay

IRF830A
IRF830A

IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (?)VGS = 10 V 1.4 RoHS* • Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 24 COMPLIANT Ruggedness Qgs (nC) 6.3 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 11 and Current Configuration Single

Datasheet: IRF820AS , IRF820FI , IRF820S , IRF821 , IRF822 , IRF822FI , IRF823 , IRF830 , IRFP250N , IRF830AL , IRF830AS , IRF830FI , IRF830S , IRF831 , IRF831FI , IRF832 , IRF833 .

 


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